JP5406257B2 - 接合方法、プログラム、コンピュータ記憶媒体及び接合システム - Google Patents
接合方法、プログラム、コンピュータ記憶媒体及び接合システム Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B32B38/10—Removing layers, or parts of layers, mechanically or chemically
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- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/0012—Mechanical treatment, e.g. roughening, deforming, stretching
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- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
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- H—ELECTRICITY
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
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- H01L21/67092—Apparatus for mechanical treatment
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- H—ELECTRICITY
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/14—Semiconductor wafers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/14—Surface bonding means and/or assembly means with shaping, scarifying, or cleaning joining surface only
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Adhesives Or Adhesive Processes (AREA)
Description
前記接着剤除去装置において、前記回転保持部によって重合基板を回転させながら、前記溶剤供給部から前記外側接着剤に対して接着剤の溶剤が供給されるようにしてもよい。
30〜33 接合装置
40 塗布装置
41 接着剤除去装置
42〜47 熱処理装置
292 接着剤ノズル
310 スピンチャック
320 溶剤供給部
321 上部ノズル
322 下部ノズル
331 エジェクタ
400 制御部
500 溶剤ノズル
510 他の接着剤除去装置
G 接着剤
GE 外側接着剤
S 支持ウェハ
T 重合ウェハ
W 被処理ウェハ
Claims (20)
- 被処理基板と支持基板を接合する接合方法であって、
接着剤を介して、被処理基板と支持基板を押圧して接合する接合工程と、
その後、前記接合工程において被処理基板と支持基板の間の接着剤が当該被処理基板と支持基板を接合した重合基板の外側面からはみ出た外側接着剤に対して、接着剤の溶剤を供給し、前記外側接着剤が所定の大きさに形成されるように当該外側接着剤の表面を除去する接着剤除去工程と、を有し、
前記接着剤除去工程後、被処理基板は薄化され、
前記接着剤除去工程における前記外側接着剤の所定の大きさは、前記外側接着剤の端部の位置と薄化後の被処理基板の端部の位置が一致する大きさであることを特徴とする、接合方法。 - 前記接着剤除去工程において、前記外側接着剤の被処理基板側及び支持基板側から接着剤の溶剤を供給することを特徴とする、請求項1に記載の接合方法。
- 前記接着剤除去工程において、重合基板を回転させながら、前記外側接着剤に対して接着剤の溶剤を供給することを特徴とする、請求項1又は2に記載の接合方法。
- 前記接着剤除去工程において、重合基板の回転数を制御して、前記外側接着剤を所定の大きさに形成することを特徴とする、請求項3に記載の接合方法。
- 前記接着剤除去工程において、前記外側接着剤に対して平面視における複数箇所から接着剤の溶剤を供給することを特徴とする、請求項3又は4に記載の接合方法。
- 前記接着剤除去工程において、前記外側接着剤の表面を除去後の接着剤の溶剤を強制的に排出することを特徴とする、請求項1〜5のいずれかに記載の接合方法。
- 前記接合工程の前に、被処理基板又は支持基板に接着剤を塗布する接着剤塗布工程と、
前記接着剤塗布工程の後であって前記接合工程の前に、接着剤が塗布された被処理基板又は支持基板の外周部上に接着剤の溶剤を供給し、当該外周部上の接着剤を除去する他の接着剤除去工程と、を有することを特徴とする、請求項1〜6のいずれかに記載の接合方法。 - 前記他の接着剤除去工程の後であって前記接合工程の前に、接着剤が塗布されて前記外周部上の接着剤が除去された被処理基板又は支持基板を、所定の温度に加熱する熱処理工程を有することを特徴とする、請求項7に記載の接合方法。
- 前記接着剤塗布工程の後であって前記他の接着剤除去工程の前に、接着剤が塗布された被処理基板又は支持基板を所定の温度に加熱する熱処理工程を有することを特徴とする、請求項7に記載の接合方法。
- 請求項1〜9のいずかに記載の接合方法を接合システムによって実行させるように、当該接合システムを制御する制御部のコンピュータ上で動作するプログラム。
- 請求項10に記載のプログラムを格納した読み取り可能なコンピュータ記憶媒体。
- 被処理基板と支持基板を接合する接合システムであって、
接着剤を介して、被処理基板と支持基板を押圧して接合する接合装置と、
前記接合装置において被処理基板と支持基板の間の接着剤が当該被処理基板と支持基板を接合した重合基板の外側面からはみ出た外側接着剤に対して、接着剤の溶剤を供給する溶剤供給部を備え、前記溶剤供給部から供給された接着剤の溶剤によって、前記外側接着剤が所定の大きさに形成されるように当該外側接着剤の表面を除去する接着剤除去装置と、を有し、
前記接着剤除去装置において前記外側接着剤の表面を除去後、被処理基板は薄化され、
前記接着剤除去装置において形成される前記外側接着剤の所定の大きさは、前記外側接着剤の端部の位置と薄化後の被処理基板の端部の位置が一致する大きさであることを特徴とする、接合システム。 - 前記溶剤供給部は、前記外側接着剤の被処理基板側及び支持基板側にそれぞれ配置されていることを特徴とする、請求項12に記載の接合システム。
- 前記接着剤除去装置は、重合基板を保持して回転させる回転保持部を有し、
前記接着剤除去装置において、前記回転保持部によって重合基板を回転させながら、前記溶剤供給部から前記外側接着剤に対して接着剤の溶剤が供給されることを特徴とする、請求項12又は13に記載の接合システム。 - 前記接着剤除去装置において重合基板の回転数を制御して、前記外側接着剤を所定の大きさに形成するように、前記回転保持部を制御する制御部を有することを特徴とする、請求項14に記載の接合システム。
- 前記溶剤供給部は、前記外側接着剤に対して平面視における複数箇所に配置されていることを特徴とする、請求項14又は15に記載の接合システム。
- 前記接着剤除去装置は、前記外側接着剤の表面を除去後の接着剤の溶剤を強制的に排出する排出機構を有することを特徴とする、請求項12〜16のいずれかに記載の接合システム。
- 被処理基板又は支持基板に接着剤を供給して塗布する接着剤供給部と、
前記接着剤供給部によって接着剤が塗布された被処理基板又は支持基板の外周部上に接着剤の溶剤を供給し、当該外周部上の接着剤を除去する他の溶剤供給部と、を有することを特徴とする、請求項12〜17のいずれかに記載の接合システム。 - 前記接着剤供給部と前記他の溶剤供給部は、一の塗布装置内に設けられ、
前記塗布装置において接着剤が塗布されて前記外周部上の接着剤が除去された被処理基板又は支持基板を、所定の温度に加熱する熱処理装置を有することを特徴とする、請求項18に記載の接合システム。 - 前記接着剤供給部を備えた塗布装置と、
前記塗布装置において接着剤が塗布された被処理基板又は支持基板を、所定の温度に加熱する熱処理装置と、
前記熱処理装置において所定の温度に加熱された被処理基板又は支持基板の前記外周部上に、接着剤の溶剤を供給する前記他の溶剤供給部を備えた他の接着剤除去装置と、を有することを特徴とする、請求項18に記載の接合システム。
Priority Applications (5)
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JP2011195448A JP5406257B2 (ja) | 2011-09-07 | 2011-09-07 | 接合方法、プログラム、コンピュータ記憶媒体及び接合システム |
TW101131372A TWI540661B (zh) | 2011-09-07 | 2012-08-29 | 接合方法、電腦記憶媒體及接合系統 |
PCT/JP2012/071989 WO2013035620A1 (ja) | 2011-09-07 | 2012-08-30 | 接合方法及び接合システム |
US14/342,704 US9463612B2 (en) | 2011-09-07 | 2012-08-30 | Joining method and joining system |
KR1020147005336A KR101861891B1 (ko) | 2011-09-07 | 2012-08-30 | 접합 방법 및 접합 시스템 |
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JP2013058571A (ja) * | 2011-09-07 | 2013-03-28 | Tokyo Electron Ltd | 接合方法、プログラム、コンピュータ記憶媒体及び接合システム |
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JP6295066B2 (ja) * | 2013-11-20 | 2018-03-14 | 東京応化工業株式会社 | 処理方法 |
JP6244183B2 (ja) * | 2013-11-20 | 2017-12-06 | 東京応化工業株式会社 | 処理方法 |
JP6321366B2 (ja) * | 2013-12-16 | 2018-05-09 | 東京応化工業株式会社 | 積層体、積層体の製造方法、及び基板の処理方法 |
KR101554815B1 (ko) * | 2014-03-07 | 2015-09-21 | (주)에스티아이 | 관통전극 웨이퍼 제조방법 |
KR101630573B1 (ko) | 2015-03-23 | 2016-06-14 | 한국광기술원 | 접합 장치 및 방법 |
JP6769022B2 (ja) | 2015-10-07 | 2020-10-14 | 株式会社リコー | 液体吐出ヘッド、液体吐出ユニット、液体を吐出する装置 |
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JPS57174370A (en) * | 1981-04-20 | 1982-10-27 | Sumitomo Electric Ind Ltd | Removal of adhesive by spray cleaning |
JP3282164B2 (ja) * | 1999-12-27 | 2002-05-13 | 直江津電子工業株式会社 | ウエハ接着剤塗布方法 |
WO2004066380A1 (en) * | 2003-01-24 | 2004-08-05 | S.O.I.Tec Silicon On Insulator Technologies | A layer transfer method |
WO2005112019A1 (en) * | 2004-05-17 | 2005-11-24 | Unaxis Balzers Ag | Method and apparatus for producing a multilayer storage media |
JP4306540B2 (ja) * | 2004-06-09 | 2009-08-05 | セイコーエプソン株式会社 | 半導体基板の薄型加工方法 |
JP4954663B2 (ja) * | 2005-10-17 | 2012-06-20 | 東京エレクトロン株式会社 | 貼り合せ装置 |
JP2008182016A (ja) | 2007-01-24 | 2008-08-07 | Tokyo Electron Ltd | 貼り合わせ装置、貼り合わせ方法 |
JP5271554B2 (ja) * | 2008-02-04 | 2013-08-21 | 東京応化工業株式会社 | サポートプレート |
JP2010062269A (ja) * | 2008-09-02 | 2010-03-18 | Three M Innovative Properties Co | ウェーハ積層体の製造方法、ウェーハ積層体製造装置、ウェーハ積層体、支持層剥離方法、及びウェーハの製造方法 |
US8252665B2 (en) * | 2009-09-14 | 2012-08-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Protection layer for adhesive material at wafer edge |
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