TWI427170B - Film forming method and thin film forming apparatus - Google Patents

Film forming method and thin film forming apparatus Download PDF

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Publication number
TWI427170B
TWI427170B TW097107139A TW97107139A TWI427170B TW I427170 B TWI427170 B TW I427170B TW 097107139 A TW097107139 A TW 097107139A TW 97107139 A TW97107139 A TW 97107139A TW I427170 B TWI427170 B TW I427170B
Authority
TW
Taiwan
Prior art keywords
substrate
sputtering
target
film
targets
Prior art date
Application number
TW097107139A
Other languages
English (en)
Chinese (zh)
Other versions
TW200842198A (en
Inventor
Masaki Takei
Tetsu Ishibashi
Junya Kiyota
Yuuji Ichihashi
Shigemitsu Satou
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of TW200842198A publication Critical patent/TW200842198A/zh
Application granted granted Critical
Publication of TWI427170B publication Critical patent/TWI427170B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
TW097107139A 2007-03-01 2008-02-29 Film forming method and thin film forming apparatus TWI427170B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007051160 2007-03-01

Publications (2)

Publication Number Publication Date
TW200842198A TW200842198A (en) 2008-11-01
TWI427170B true TWI427170B (zh) 2014-02-21

Family

ID=39738081

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097107139A TWI427170B (zh) 2007-03-01 2008-02-29 Film forming method and thin film forming apparatus

Country Status (5)

Country Link
JP (2) JP5145325B2 (ja)
KR (1) KR101083443B1 (ja)
CN (1) CN101622374B (ja)
TW (1) TWI427170B (ja)
WO (1) WO2008108185A1 (ja)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120130335A (ko) * 2010-03-01 2012-11-30 가부시키가이샤 알박 스퍼터링 장치
JP5362112B2 (ja) * 2010-06-17 2013-12-11 株式会社アルバック スパッタ成膜装置及び防着部材
CN102373422A (zh) * 2010-08-24 2012-03-14 鸿富锦精密工业（深圳）有限公司 真空镀膜系统
EP2437280A1 (en) * 2010-09-30 2012-04-04 Applied Materials, Inc. Systems and methods for forming a layer of sputtered material
US9469897B2 (en) 2010-12-06 2016-10-18 Sharp Kabushiki Kaisha Thin film forming apparatus and thin film forming method
KR101363880B1 (ko) * 2011-12-15 2014-02-18 주식회사 테스 스퍼터링 장치
KR20130095436A (ko) * 2012-02-20 2013-08-28 엘지디스플레이 주식회사 산화물 반도체층을 형성하는 스퍼터링 장치 및 방법
KR102123455B1 (ko) * 2013-01-30 2020-06-17 엘지디스플레이 주식회사 스퍼터링 장치 및 산화물 반도체 물질의 스퍼터링 방법
JP6149568B2 (ja) * 2013-07-19 2017-06-21 三菱電機株式会社 半導体装置の製造方法
JP6251588B2 (ja) * 2014-02-04 2017-12-20 株式会社アルバック 成膜方法
TWI530575B (zh) * 2014-05-26 2016-04-21 友達光電股份有限公司 濺鍍設備以及保護膜的形成方法
US9988707B2 (en) * 2014-05-30 2018-06-05 Ppg Industries Ohio, Inc. Transparent conducting indium doped tin oxide
JP6588351B2 (ja) * 2016-01-27 2019-10-09 株式会社アルバック 成膜方法
KR102359244B1 (ko) * 2016-11-21 2022-02-08 한국알박(주) 막 증착 방법
JP7007457B2 (ja) * 2018-03-16 2022-01-24 株式会社アルバック 成膜方法
JP7066841B2 (ja) * 2018-06-19 2022-05-13 株式会社アルバック スパッタリング方法、スパッタリング装置
CN109468600B (zh) * 2018-12-25 2021-03-05 合肥鑫晟光电科技有限公司 溅射系统和沉积方法
CN109487224A (zh) * 2018-12-28 2019-03-19 湖畔光电科技（江苏）有限公司 一种新型磁控溅射装置
JP7219140B2 (ja) * 2019-04-02 2023-02-07 株式会社アルバック 成膜方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03211275A (ja) * 1989-11-13 1991-09-17 Optical Coating Lab Inc マグネトロンスパッタリング装置及び方法
TW562868B (en) * 2000-03-23 2003-11-21 Sharp Kk Plasma deposition device for forming thin film

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03243761A (ja) * 1990-02-22 1991-10-30 Fuji Photo Film Co Ltd スパッタリング装置
JPH03285067A (ja) * 1990-03-30 1991-12-16 Seiko Instr Inc スパッタターゲットユニット
JPH0741940A (ja) * 1993-07-27 1995-02-10 Iwasaki Electric Co Ltd スパッタリング装置
JPH07331424A (ja) * 1994-06-09 1995-12-19 Mitsubishi Electric Corp 半導体薄膜形成装置
JP4202459B2 (ja) * 1998-03-02 2008-12-24 キヤノンアネルバ株式会社 スパッタ成膜装置およびスパッタ成膜方法
JP2001207257A (ja) * 2000-01-24 2001-07-31 Matsushita Electric Ind Co Ltd Ｇｍｒ膜の製造方法及び製造装置
JP4101522B2 (ja) * 2001-02-01 2008-06-18 株式会社半導体エネルギー研究所 成膜装置及び成膜方法
JP4246547B2 (ja) * 2003-05-23 2009-04-02 株式会社アルバック スパッタリング装置、及びスパッタリング方法
JP2005340425A (ja) * 2004-05-26 2005-12-08 Ulvac Japan Ltd 真空処理装置
JP4837271B2 (ja) * 2004-10-04 2011-12-14 株式会社アルバック 反射防止膜の形成方法
JP4922581B2 (ja) * 2005-07-29 2012-04-25 株式会社アルバック スパッタリング装置及びスパッタリング方法
US8460522B2 (en) * 2006-10-24 2013-06-11 Ulvac, Inc. Method of forming thin film and apparatus for forming thin film

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03211275A (ja) * 1989-11-13 1991-09-17 Optical Coating Lab Inc マグネトロンスパッタリング装置及び方法
TW562868B (en) * 2000-03-23 2003-11-21 Sharp Kk Plasma deposition device for forming thin film

Also Published As

Publication number Publication date
JPWO2008108185A1 (ja) 2010-06-10
JP5454976B2 (ja) 2014-03-26
CN101622374A (zh) 2010-01-06
KR101083443B1 (ko) 2011-11-14
WO2008108185A1 (ja) 2008-09-12
JP2012184511A (ja) 2012-09-27
TW200842198A (en) 2008-11-01
JP5145325B2 (ja) 2013-02-13
CN101622374B (zh) 2012-07-18
KR20090106654A (ko) 2009-10-09

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