JP6251588B2 - 成膜方法 - Google Patents
成膜方法 Download PDFInfo
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- JP6251588B2 JP6251588B2 JP2014019831A JP2014019831A JP6251588B2 JP 6251588 B2 JP6251588 B2 JP 6251588B2 JP 2014019831 A JP2014019831 A JP 2014019831A JP 2014019831 A JP2014019831 A JP 2014019831A JP 6251588 B2 JP6251588 B2 JP 6251588B2
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- 238000000151 deposition Methods 0.000 title claims description 3
- 239000000758 substrate Substances 0.000 claims description 153
- 238000012545 processing Methods 0.000 claims description 112
- 239000010408 film Substances 0.000 claims description 93
- 239000010409 thin film Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 23
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- 238000012546 transfer Methods 0.000 claims description 12
- 230000004907 flux Effects 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 description 47
- 238000009826 distribution Methods 0.000 description 33
- 239000007789 gas Substances 0.000 description 18
- 230000003628 erosive effect Effects 0.000 description 11
- 239000002245 particle Substances 0.000 description 8
- 239000011521 glass Substances 0.000 description 5
- 238000005546 reactive sputtering Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Description
Claims (3)
- 一方向に連設した複数の処理室内に、処理室の連設方向を移動方向とし、移動方向に沿って同数枚のターゲットを等間隔で夫々並設し、各処理室内で各ターゲットに対向した位置に処理基板を移送して停止し、各ターゲットに静止対向した処理基板の表面に対して、当該処理基板が存する処理室内の各ターゲットに電力投入して各ターゲットをスパッタリングし、各処理室を通して同一または異なる薄膜を積層する成膜方法であって、
連続して薄膜を形成する各処理室相互の間で処理基板表面のうち各ターゲットと対向する領域が移動方向で互いにずれるように処理基板の停止位置を変えるものにおいて、
移動方向前後端に夫々位置するターゲットを除く各ターゲットに投入する電力を定常電力とし、移動方向前後端に夫々位置するターゲットに、成膜すべき処理基板がかわる毎に定常電力より低い低電力と定常電力より高い高電力とを交互に切りかえて、かつ、両ターゲットへの投入電力を互いにかえて電力投入することを特徴とする成膜方法。 - 処理室内に複数枚のターゲットを所定間隔を存して並設し、これらターゲットの並設方向を移動方向とし、各ターゲットと処理基板とを対向配置し、各ターゲットに対する処理基板の位置が移動方向でずれるように各ターゲットと処理基板とを相対往復動し、各ターゲットに電力投入して各ターゲットをスパッタリングし、処理基板の各ターゲットとの対向面に所定の薄膜を成膜する成膜方法において、
移動方向前後端に夫々位置するターゲットを除く各ターゲットに投入する電力を定常電力とし、成膜中、移動方向前後端に夫々位置するターゲットに、各ターゲットに対する処理基板の位置に応じて定常電力より低い低電力と定常電力より高い高電力とを交互に切りかえて、かつ、両ターゲットへの投入電力を互いにかえて電力投入することを特徴とする成膜方法。 - 前記各ターゲットから前記基板に向かう方向を上とし、各ターゲットの上方にトンネル状の磁束を夫々形成し、各磁束を基板移送方向または移動方向に所定の速度で往復動することを特徴とする請求項1または請求項2記載の成膜方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014019831A JP6251588B2 (ja) | 2014-02-04 | 2014-02-04 | 成膜方法 |
CN201510033778.7A CN104818458B (zh) | 2014-02-04 | 2015-01-23 | 成膜方法 |
KR1020150014067A KR102163937B1 (ko) | 2014-02-04 | 2015-01-29 | 성막 방법 |
Applications Claiming Priority (1)
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JP2014019831A JP6251588B2 (ja) | 2014-02-04 | 2014-02-04 | 成膜方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015147953A JP2015147953A (ja) | 2015-08-20 |
JP6251588B2 true JP6251588B2 (ja) | 2017-12-20 |
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Application Number | Title | Priority Date | Filing Date |
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JP2014019831A Active JP6251588B2 (ja) | 2014-02-04 | 2014-02-04 | 成膜方法 |
Country Status (3)
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JP (1) | JP6251588B2 (ja) |
KR (1) | KR102163937B1 (ja) |
CN (1) | CN104818458B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6588351B2 (ja) * | 2016-01-27 | 2019-10-09 | 株式会社アルバック | 成膜方法 |
KR102182582B1 (ko) * | 2017-06-28 | 2020-11-24 | 가부시키가이샤 아루박 | 스퍼터 장치 |
CN109468600B (zh) * | 2018-12-25 | 2021-03-05 | 合肥鑫晟光电科技有限公司 | 溅射系统和沉积方法 |
CN111041441B (zh) * | 2019-12-28 | 2021-04-13 | 中国科学院长春光学精密机械与物理研究所 | 一种均匀镀膜方法、镀膜设备及计算机可读存储介质 |
KR102670105B1 (ko) * | 2021-03-18 | 2024-05-28 | 주식회사 에이치앤이루자 | 스퍼터링 방법 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2901317B2 (ja) * | 1990-07-02 | 1999-06-07 | 株式会社日立製作所 | スパッタ装置及びそれを用いた成膜方法 |
JPH10152772A (ja) * | 1996-11-22 | 1998-06-09 | Matsushita Electric Ind Co Ltd | スパッタリング方法及び装置 |
JP4246547B2 (ja) * | 2003-05-23 | 2009-04-02 | 株式会社アルバック | スパッタリング装置、及びスパッタリング方法 |
JP5162464B2 (ja) * | 2006-10-24 | 2013-03-13 | 株式会社アルバック | 薄膜形成方法及び薄膜形成装置 |
CN101622374B (zh) * | 2007-03-01 | 2012-07-18 | 株式会社爱发科 | 薄膜形成方法及薄膜形成装置 |
JP4707693B2 (ja) * | 2007-05-01 | 2011-06-22 | 株式会社アルバック | スパッタリング装置及びスパッタリング方法 |
CN102312206B (zh) * | 2010-06-29 | 2015-07-15 | 株式会社爱发科 | 溅射方法 |
KR20120130518A (ko) * | 2011-05-23 | 2012-12-03 | 삼성디스플레이 주식회사 | 스퍼터링용 분할 타겟 장치 및 그것을 이용한 스퍼터링 방법 |
KR101794586B1 (ko) * | 2011-05-23 | 2017-11-08 | 삼성디스플레이 주식회사 | 스퍼터링용 분할 타겟 장치 및 그것을 이용한 스퍼터링 방법 |
-
2014
- 2014-02-04 JP JP2014019831A patent/JP6251588B2/ja active Active
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2015
- 2015-01-23 CN CN201510033778.7A patent/CN104818458B/zh active Active
- 2015-01-29 KR KR1020150014067A patent/KR102163937B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
JP2015147953A (ja) | 2015-08-20 |
KR20150091996A (ko) | 2015-08-12 |
KR102163937B1 (ko) | 2020-10-12 |
CN104818458A (zh) | 2015-08-05 |
CN104818458B (zh) | 2019-03-05 |
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