WO2008108185A1 - 薄膜形成方法及び薄膜形成装置 - Google Patents
薄膜形成方法及び薄膜形成装置 Download PDFInfo
- Publication number
- WO2008108185A1 WO2008108185A1 PCT/JP2008/053022 JP2008053022W WO2008108185A1 WO 2008108185 A1 WO2008108185 A1 WO 2008108185A1 JP 2008053022 W JP2008053022 W JP 2008053022W WO 2008108185 A1 WO2008108185 A1 WO 2008108185A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- treated substrate
- thin film
- film forming
- individual targets
- targets
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020097018297A KR101083443B1 (ko) | 2007-03-01 | 2008-02-22 | 박막 형성 방법 및 박막 형성 장치 |
CN2008800060876A CN101622374B (zh) | 2007-03-01 | 2008-02-22 | 薄膜形成方法及薄膜形成装置 |
JP2009502513A JP5145325B2 (ja) | 2007-03-01 | 2008-02-22 | 薄膜形成方法及び薄膜形成装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-051160 | 2007-03-01 | ||
JP2007051160 | 2007-03-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008108185A1 true WO2008108185A1 (ja) | 2008-09-12 |
Family
ID=39738081
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/053022 WO2008108185A1 (ja) | 2007-03-01 | 2008-02-22 | 薄膜形成方法及び薄膜形成装置 |
Country Status (5)
Country | Link |
---|---|
JP (2) | JP5145325B2 (ja) |
KR (1) | KR101083443B1 (ja) |
CN (1) | CN101622374B (ja) |
TW (1) | TWI427170B (ja) |
WO (1) | WO2008108185A1 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011158828A1 (ja) * | 2010-06-17 | 2011-12-22 | 株式会社アルバック | スパッタ成膜装置及び防着部材 |
EP2437280A1 (en) * | 2010-09-30 | 2012-04-04 | Applied Materials, Inc. | Systems and methods for forming a layer of sputtered material |
KR20150003915A (ko) * | 2010-03-01 | 2015-01-09 | 가부시키가이샤 알박 | 스퍼터링 장치 |
KR20150091996A (ko) * | 2014-02-04 | 2015-08-12 | 가부시키가이샤 알박 | 성막 방법 |
US9469897B2 (en) | 2010-12-06 | 2016-10-18 | Sharp Kabushiki Kaisha | Thin film forming apparatus and thin film forming method |
CN111527236A (zh) * | 2018-06-19 | 2020-08-11 | 株式会社爱发科 | 溅射方法及溅射装置 |
Families Citing this family (13)
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---|---|---|---|---|
CN102373422A (zh) * | 2010-08-24 | 2012-03-14 | 鸿富锦精密工业(深圳)有限公司 | 真空镀膜系统 |
KR101363880B1 (ko) * | 2011-12-15 | 2014-02-18 | 주식회사 테스 | 스퍼터링 장치 |
KR20130095436A (ko) * | 2012-02-20 | 2013-08-28 | 엘지디스플레이 주식회사 | 산화물 반도체층을 형성하는 스퍼터링 장치 및 방법 |
KR102123455B1 (ko) * | 2013-01-30 | 2020-06-17 | 엘지디스플레이 주식회사 | 스퍼터링 장치 및 산화물 반도체 물질의 스퍼터링 방법 |
JP6149568B2 (ja) * | 2013-07-19 | 2017-06-21 | 三菱電機株式会社 | 半導体装置の製造方法 |
TWI530575B (zh) * | 2014-05-26 | 2016-04-21 | 友達光電股份有限公司 | 濺鍍設備以及保護膜的形成方法 |
US9988707B2 (en) * | 2014-05-30 | 2018-06-05 | Ppg Industries Ohio, Inc. | Transparent conducting indium doped tin oxide |
JP6588351B2 (ja) * | 2016-01-27 | 2019-10-09 | 株式会社アルバック | 成膜方法 |
KR102359244B1 (ko) * | 2016-11-21 | 2022-02-08 | 한국알박(주) | 막 증착 방법 |
KR102376098B1 (ko) * | 2018-03-16 | 2022-03-18 | 가부시키가이샤 알박 | 성막 방법 |
CN109468600B (zh) * | 2018-12-25 | 2021-03-05 | 合肥鑫晟光电科技有限公司 | 溅射系统和沉积方法 |
CN109487224A (zh) * | 2018-12-28 | 2019-03-19 | 湖畔光电科技(江苏)有限公司 | 一种新型磁控溅射装置 |
JP7219140B2 (ja) * | 2019-04-02 | 2023-02-07 | 株式会社アルバック | 成膜方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03243761A (ja) * | 1990-02-22 | 1991-10-30 | Fuji Photo Film Co Ltd | スパッタリング装置 |
JPH11246969A (ja) * | 1998-03-02 | 1999-09-14 | Anelva Corp | スパッタ成膜装置 |
JP2004346388A (ja) * | 2003-05-23 | 2004-12-09 | Ulvac Japan Ltd | スパッタ源、スパッタリング装置、及びスパッタリング方法 |
JP2006106239A (ja) * | 2004-10-04 | 2006-04-20 | Ulvac Japan Ltd | 反射防止膜の形成方法 |
JP2007031817A (ja) * | 2005-07-29 | 2007-02-08 | Ulvac Japan Ltd | スパッタリング装置及びスパッタリング方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69027004T2 (de) * | 1989-11-13 | 1996-11-14 | Optical Coating Laboratory Inc | Geometrie und Gestaltungen eines Geräts zum Magnetronzerstäuben |
JPH03285067A (ja) * | 1990-03-30 | 1991-12-16 | Seiko Instr Inc | スパッタターゲットユニット |
JPH0741940A (ja) * | 1993-07-27 | 1995-02-10 | Iwasaki Electric Co Ltd | スパッタリング装置 |
JPH07331424A (ja) * | 1994-06-09 | 1995-12-19 | Mitsubishi Electric Corp | 半導体薄膜形成装置 |
JP2001207257A (ja) * | 2000-01-24 | 2001-07-31 | Matsushita Electric Ind Co Ltd | Gmr膜の製造方法及び製造装置 |
JP3586197B2 (ja) * | 2000-03-23 | 2004-11-10 | シャープ株式会社 | 薄膜形成用プラズマ成膜装置 |
JP4101522B2 (ja) * | 2001-02-01 | 2008-06-18 | 株式会社半導体エネルギー研究所 | 成膜装置及び成膜方法 |
JP2005340425A (ja) * | 2004-05-26 | 2005-12-08 | Ulvac Japan Ltd | 真空処理装置 |
WO2008050618A1 (fr) * | 2006-10-24 | 2008-05-02 | Ulvac, Inc. | Procédé de fabrication d'un film mince et dispositif de fabrication d'un film mince |
-
2008
- 2008-02-22 KR KR1020097018297A patent/KR101083443B1/ko active IP Right Grant
- 2008-02-22 CN CN2008800060876A patent/CN101622374B/zh active Active
- 2008-02-22 WO PCT/JP2008/053022 patent/WO2008108185A1/ja active Application Filing
- 2008-02-22 JP JP2009502513A patent/JP5145325B2/ja active Active
- 2008-02-29 TW TW097107139A patent/TWI427170B/zh active
-
2012
- 2012-06-22 JP JP2012141323A patent/JP5454976B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03243761A (ja) * | 1990-02-22 | 1991-10-30 | Fuji Photo Film Co Ltd | スパッタリング装置 |
JPH11246969A (ja) * | 1998-03-02 | 1999-09-14 | Anelva Corp | スパッタ成膜装置 |
JP2004346388A (ja) * | 2003-05-23 | 2004-12-09 | Ulvac Japan Ltd | スパッタ源、スパッタリング装置、及びスパッタリング方法 |
JP2006106239A (ja) * | 2004-10-04 | 2006-04-20 | Ulvac Japan Ltd | 反射防止膜の形成方法 |
JP2007031817A (ja) * | 2005-07-29 | 2007-02-08 | Ulvac Japan Ltd | スパッタリング装置及びスパッタリング方法 |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150003915A (ko) * | 2010-03-01 | 2015-01-09 | 가부시키가이샤 알박 | 스퍼터링 장치 |
KR101964487B1 (ko) | 2010-03-01 | 2019-04-02 | 가부시키가이샤 알박 | 스퍼터링 장치 |
CN103038385B (zh) * | 2010-06-17 | 2014-12-24 | 株式会社爱发科 | 溅射成膜装置及防附着部件 |
WO2011158828A1 (ja) * | 2010-06-17 | 2011-12-22 | 株式会社アルバック | スパッタ成膜装置及び防着部材 |
CN103038385A (zh) * | 2010-06-17 | 2013-04-10 | 株式会社爱发科 | 溅射成膜装置及防附着部件 |
TWI561653B (en) * | 2010-09-30 | 2016-12-11 | Applied Materials Inc | Systems and methods for forming a layer of sputtered material |
EP2437280A1 (en) * | 2010-09-30 | 2012-04-04 | Applied Materials, Inc. | Systems and methods for forming a layer of sputtered material |
EP2622627B1 (en) * | 2010-09-30 | 2018-09-05 | Applied Materials, Inc. | Systems and methods for forming a layer of sputtered material |
JP2015172240A (ja) * | 2010-09-30 | 2015-10-01 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | スパッタされた材料の層を形成するシステムおよび方法 |
JP2013544958A (ja) * | 2010-09-30 | 2013-12-19 | アプライド マテリアルズ インコーポレイテッド | スパッタされた材料の層を形成するシステムおよび方法 |
US9469897B2 (en) | 2010-12-06 | 2016-10-18 | Sharp Kabushiki Kaisha | Thin film forming apparatus and thin film forming method |
JP2015147953A (ja) * | 2014-02-04 | 2015-08-20 | 株式会社アルバック | 成膜方法 |
KR20150091996A (ko) * | 2014-02-04 | 2015-08-12 | 가부시키가이샤 알박 | 성막 방법 |
KR102163937B1 (ko) | 2014-02-04 | 2020-10-12 | 가부시키가이샤 알박 | 성막 방법 |
CN111527236A (zh) * | 2018-06-19 | 2020-08-11 | 株式会社爱发科 | 溅射方法及溅射装置 |
CN111527236B (zh) * | 2018-06-19 | 2022-10-28 | 株式会社爱发科 | 溅射方法及溅射装置 |
Also Published As
Publication number | Publication date |
---|---|
JP5454976B2 (ja) | 2014-03-26 |
TWI427170B (zh) | 2014-02-21 |
KR20090106654A (ko) | 2009-10-09 |
KR101083443B1 (ko) | 2011-11-14 |
JP2012184511A (ja) | 2012-09-27 |
CN101622374A (zh) | 2010-01-06 |
CN101622374B (zh) | 2012-07-18 |
JP5145325B2 (ja) | 2013-02-13 |
TW200842198A (en) | 2008-11-01 |
JPWO2008108185A1 (ja) | 2010-06-10 |
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