WO2008108185A1 - 薄膜形成方法及び薄膜形成装置 - Google Patents

薄膜形成方法及び薄膜形成装置 Download PDF

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Publication number
WO2008108185A1
WO2008108185A1 PCT/JP2008/053022 JP2008053022W WO2008108185A1 WO 2008108185 A1 WO2008108185 A1 WO 2008108185A1 JP 2008053022 W JP2008053022 W JP 2008053022W WO 2008108185 A1 WO2008108185 A1 WO 2008108185A1
Authority
WO
WIPO (PCT)
Prior art keywords
treated substrate
thin film
film forming
individual targets
targets
Prior art date
Application number
PCT/JP2008/053022
Other languages
English (en)
French (fr)
Inventor
Masaki Takei
Tetsu Ishibashi
Junya Kiyota
Yuuji Ichihashi
Shigemitsu Satou
Original Assignee
Ulvac, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac, Inc. filed Critical Ulvac, Inc.
Priority to KR1020097018297A priority Critical patent/KR101083443B1/ko
Priority to CN2008800060876A priority patent/CN101622374B/zh
Priority to JP2009502513A priority patent/JP5145325B2/ja
Publication of WO2008108185A1 publication Critical patent/WO2008108185A1/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

【課題】　反応性スパッタリングにより所定の薄膜を形成する際に、処理基板全面に亘って膜厚分布や比抵抗値などの膜質を略均一にできるようにスパッタリング装置を構成する。【解決手段】　同数のターゲット３１ａ乃至３１ｈが等間隔で並設された複数のスパッタ室１１ａ、１１ｂの間で、各ターゲットに対向した位置に処理基板Ｓを搬送し、この処理基板が存するスパッタ室内の各ターゲットに電力投入して各ターゲットをスパッタリングし、処理基板表面に同一または異なる薄膜を積層する。その際、相互に連続するスパッタ室の間で処理基板表面のうち各ターゲット相互の間の領域と対向する箇所がずれるように処理基板の停止位置を変える。
PCT/JP2008/053022 2007-03-01 2008-02-22 薄膜形成方法及び薄膜形成装置 WO2008108185A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020097018297A KR101083443B1 (ko) 2007-03-01 2008-02-22 박막 형성 방법 및 박막 형성 장치
CN2008800060876A CN101622374B (zh) 2007-03-01 2008-02-22 薄膜形成方法及薄膜形成装置
JP2009502513A JP5145325B2 (ja) 2007-03-01 2008-02-22 薄膜形成方法及び薄膜形成装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-051160 2007-03-01
JP2007051160 2007-03-01

Publications (1)

Publication Number Publication Date
WO2008108185A1 true WO2008108185A1 (ja) 2008-09-12

Family

ID=39738081

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/053022 WO2008108185A1 (ja) 2007-03-01 2008-02-22 薄膜形成方法及び薄膜形成装置

Country Status (5)

Country Link
JP (2) JP5145325B2 (ja)
KR (1) KR101083443B1 (ja)
CN (1) CN101622374B (ja)
TW (1) TWI427170B (ja)
WO (1) WO2008108185A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011158828A1 (ja) * 2010-06-17 2011-12-22 株式会社アルバック スパッタ成膜装置及び防着部材
EP2437280A1 (en) * 2010-09-30 2012-04-04 Applied Materials, Inc. Systems and methods for forming a layer of sputtered material
KR20150003915A (ko) * 2010-03-01 2015-01-09 가부시키가이샤 알박 스퍼터링 장치
KR20150091996A (ko) * 2014-02-04 2015-08-12 가부시키가이샤 알박 성막 방법
US9469897B2 (en) 2010-12-06 2016-10-18 Sharp Kabushiki Kaisha Thin film forming apparatus and thin film forming method
CN111527236A (zh) * 2018-06-19 2020-08-11 株式会社爱发科 溅射方法及溅射装置

Families Citing this family (13)

* Cited by examiner, † Cited by third party
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CN102373422A (zh) * 2010-08-24 2012-03-14 鸿富锦精密工业（深圳）有限公司 真空镀膜系统
KR101363880B1 (ko) * 2011-12-15 2014-02-18 주식회사 테스 스퍼터링 장치
KR20130095436A (ko) * 2012-02-20 2013-08-28 엘지디스플레이 주식회사 산화물 반도체층을 형성하는 스퍼터링 장치 및 방법
KR102123455B1 (ko) * 2013-01-30 2020-06-17 엘지디스플레이 주식회사 스퍼터링 장치 및 산화물 반도체 물질의 스퍼터링 방법
JP6149568B2 (ja) * 2013-07-19 2017-06-21 三菱電機株式会社 半導体装置の製造方法
TWI530575B (zh) * 2014-05-26 2016-04-21 友達光電股份有限公司 濺鍍設備以及保護膜的形成方法
US9988707B2 (en) * 2014-05-30 2018-06-05 Ppg Industries Ohio, Inc. Transparent conducting indium doped tin oxide
JP6588351B2 (ja) * 2016-01-27 2019-10-09 株式会社アルバック 成膜方法
KR102359244B1 (ko) * 2016-11-21 2022-02-08 한국알박(주) 막 증착 방법
JP7007457B2 (ja) * 2018-03-16 2022-01-24 株式会社アルバック 成膜方法
CN109468600B (zh) * 2018-12-25 2021-03-05 合肥鑫晟光电科技有限公司 溅射系统和沉积方法
CN109487224A (zh) * 2018-12-28 2019-03-19 湖畔光电科技（江苏）有限公司 一种新型磁控溅射装置
JP7219140B2 (ja) * 2019-04-02 2023-02-07 株式会社アルバック 成膜方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03243761A (ja) * 1990-02-22 1991-10-30 Fuji Photo Film Co Ltd スパッタリング装置
JPH11246969A (ja) * 1998-03-02 1999-09-14 Anelva Corp スパッタ成膜装置
JP2004346388A (ja) * 2003-05-23 2004-12-09 Ulvac Japan Ltd スパッタ源、スパッタリング装置、及びスパッタリング方法
JP2006106239A (ja) * 2004-10-04 2006-04-20 Ulvac Japan Ltd 反射防止膜の形成方法
JP2007031817A (ja) * 2005-07-29 2007-02-08 Ulvac Japan Ltd スパッタリング装置及びスパッタリング方法

Family Cites Families (9)

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EP0428358B1 (en) * 1989-11-13 1996-05-15 Optical Coating Laboratory, Inc. Geometries and configurations for magnetron sputtering apparatus
JPH03285067A (ja) * 1990-03-30 1991-12-16 Seiko Instr Inc スパッタターゲットユニット
JPH0741940A (ja) * 1993-07-27 1995-02-10 Iwasaki Electric Co Ltd スパッタリング装置
JPH07331424A (ja) * 1994-06-09 1995-12-19 Mitsubishi Electric Corp 半導体薄膜形成装置
JP2001207257A (ja) * 2000-01-24 2001-07-31 Matsushita Electric Ind Co Ltd Ｇｍｒ膜の製造方法及び製造装置
JP3586197B2 (ja) * 2000-03-23 2004-11-10 シャープ株式会社 薄膜形成用プラズマ成膜装置
JP4101522B2 (ja) * 2001-02-01 2008-06-18 株式会社半導体エネルギー研究所 成膜装置及び成膜方法
JP2005340425A (ja) * 2004-05-26 2005-12-08 Ulvac Japan Ltd 真空処理装置
US8460522B2 (en) * 2006-10-24 2013-06-11 Ulvac, Inc. Method of forming thin film and apparatus for forming thin film

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03243761A (ja) * 1990-02-22 1991-10-30 Fuji Photo Film Co Ltd スパッタリング装置
JPH11246969A (ja) * 1998-03-02 1999-09-14 Anelva Corp スパッタ成膜装置
JP2004346388A (ja) * 2003-05-23 2004-12-09 Ulvac Japan Ltd スパッタ源、スパッタリング装置、及びスパッタリング方法
JP2006106239A (ja) * 2004-10-04 2006-04-20 Ulvac Japan Ltd 反射防止膜の形成方法
JP2007031817A (ja) * 2005-07-29 2007-02-08 Ulvac Japan Ltd スパッタリング装置及びスパッタリング方法

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150003915A (ko) * 2010-03-01 2015-01-09 가부시키가이샤 알박 스퍼터링 장치
KR101964487B1 (ko) 2010-03-01 2019-04-02 가부시키가이샤 알박 스퍼터링 장치
CN103038385B (zh) * 2010-06-17 2014-12-24 株式会社爱发科 溅射成膜装置及防附着部件
WO2011158828A1 (ja) * 2010-06-17 2011-12-22 株式会社アルバック スパッタ成膜装置及び防着部材
CN103038385A (zh) * 2010-06-17 2013-04-10 株式会社爱发科 溅射成膜装置及防附着部件
TWI561653B (en) * 2010-09-30 2016-12-11 Applied Materials Inc Systems and methods for forming a layer of sputtered material
EP2437280A1 (en) * 2010-09-30 2012-04-04 Applied Materials, Inc. Systems and methods for forming a layer of sputtered material
EP2622627B1 (en) * 2010-09-30 2018-09-05 Applied Materials, Inc. Systems and methods for forming a layer of sputtered material
JP2015172240A (ja) * 2010-09-30 2015-10-01 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ スパッタされた材料の層を形成するシステムおよび方法
JP2013544958A (ja) * 2010-09-30 2013-12-19 アプライド マテリアルズ インコーポレイテッド スパッタされた材料の層を形成するシステムおよび方法
US9469897B2 (en) 2010-12-06 2016-10-18 Sharp Kabushiki Kaisha Thin film forming apparatus and thin film forming method
JP2015147953A (ja) * 2014-02-04 2015-08-20 株式会社アルバック 成膜方法
KR20150091996A (ko) * 2014-02-04 2015-08-12 가부시키가이샤 알박 성막 방법
KR102163937B1 (ko) 2014-02-04 2020-10-12 가부시키가이샤 알박 성막 방법
CN111527236A (zh) * 2018-06-19 2020-08-11 株式会社爱发科 溅射方法及溅射装置
CN111527236B (zh) * 2018-06-19 2022-10-28 株式会社爱发科 溅射方法及溅射装置

Also Published As

Publication number Publication date
JPWO2008108185A1 (ja) 2010-06-10
JP5454976B2 (ja) 2014-03-26
CN101622374A (zh) 2010-01-06
KR101083443B1 (ko) 2011-11-14
JP2012184511A (ja) 2012-09-27
TW200842198A (en) 2008-11-01
TWI427170B (zh) 2014-02-21
JP5145325B2 (ja) 2013-02-13
CN101622374B (zh) 2012-07-18
KR20090106654A (ko) 2009-10-09

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