WO2009057678A1 - 成膜装置及び成膜方法 - Google Patents

成膜装置及び成膜方法 Download PDF

Info

Publication number
WO2009057678A1
WO2009057678A1 PCT/JP2008/069726 JP2008069726W WO2009057678A1 WO 2009057678 A1 WO2009057678 A1 WO 2009057678A1 JP 2008069726 W JP2008069726 W JP 2008069726W WO 2009057678 A1 WO2009057678 A1 WO 2009057678A1
Authority
WO
WIPO (PCT)
Prior art keywords
film forming
sputtering
forming apparatus
forming method
deposition
Prior art date
Application number
PCT/JP2008/069726
Other languages
English (en)
French (fr)
Inventor
Junichiro Yoshioka
Kuniaki Horie
Nobumasa Nambu
Original Assignee
Ebara-Udylite Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara-Udylite Co., Ltd. filed Critical Ebara-Udylite Co., Ltd.
Priority to CN2008801141508A priority Critical patent/CN101842511B/zh
Publication of WO2009057678A1 publication Critical patent/WO2009057678A1/ja
Priority to HK10111011.0A priority patent/HK1144447A1/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

真空槽（３）内の第１成膜ステージ（８）には、スパッタリング装置を構成するスパッタリング装置（１０）が配置され、第２成膜ステージ（９）には、蒸着装置（１１）が配置されている。カルーセル（４）を回転させながらスパッタリング装置（１０）を作動させて薄膜を形成するスパッタリング工程を行う。このスパッタリング工程の後に、蒸着装置（１１）を作動させてさらに薄膜を形成する。スパッタリング工程では、蒸着材料が蒸発ないし昇華しないように蒸着装置（１１）を冷却する。
PCT/JP2008/069726 2007-10-31 2008-10-30 成膜装置及び成膜方法 WO2009057678A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2008801141508A CN101842511B (zh) 2007-10-31 2008-10-30 成膜设备以及成膜方法
HK10111011.0A HK1144447A1 (en) 2007-10-31 2010-11-26 Film forming apparatus and film forming method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-283472 2007-10-31
JP2007283472A JP5384002B2 (ja) 2007-10-31 2007-10-31 成膜装置及び成膜方法

Publications (1)

Publication Number Publication Date
WO2009057678A1 true WO2009057678A1 (ja) 2009-05-07

Family

ID=40591063

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/069726 WO2009057678A1 (ja) 2007-10-31 2008-10-30 成膜装置及び成膜方法

Country Status (5)

Country Link
JP (1) JP5384002B2 (ja)
KR (1) KR20100071077A (ja)
CN (1) CN101842511B (ja)
HK (1) HK1144447A1 (ja)
WO (1) WO2009057678A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102851641A (zh) * 2011-06-30 2013-01-02 比亚迪股份有限公司 一种真空镀膜装置及金属高温真空镀膜方法
EP3017457A1 (en) * 2013-07-05 2016-05-11 Innovation Ulster Limited Method and system for modifying a substrate using a plasma
CN114774849A (zh) * 2022-03-17 2022-07-22 西安超纳精密光学有限公司 一种精确控制曲率的小口径大曲率局部离子溅射镀膜系统及方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103374703B (zh) * 2012-04-26 2016-11-16 北京物华天宝镀膜科技有限公司 单管直流溅射镀膜设备及其使用方法
JP2014070241A (ja) * 2012-09-28 2014-04-21 Hitachi High-Technologies Corp 蒸着装置および蒸着方法
US9275835B2 (en) * 2012-11-29 2016-03-01 Gregory DeLarge Plasma generating device with moving carousel and method of use
JP6957270B2 (ja) * 2017-08-31 2021-11-02 株式会社Ｓｃｒｅｅｎホールディングス 成膜装置および成膜方法
JP7193291B2 (ja) * 2018-09-28 2022-12-20 キヤノントッキ株式会社 成膜装置、成膜方法、および電子デバイスの製造方法
CN110724927A (zh) * 2019-10-21 2020-01-24 上海华虹宏力半导体制造有限公司 一种解决pvd成膜首枚效应的方法
JP7354086B2 (ja) * 2020-11-30 2023-10-02 キヤノントッキ株式会社 蒸着装置、成膜装置、成膜方法及び電子デバイスの製造方法
CN115011944B (zh) * 2022-08-10 2022-10-18 怡通科技有限公司 蒸发磁控溅射多用镀膜机

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005038646A (ja) * 2003-07-16 2005-02-10 Tokki Corp 蒸着装置における金属材料用蒸発源並びにその蒸着装置
JP2005307237A (ja) * 2004-04-19 2005-11-04 Ulvac Japan Ltd 薄膜顔料製造方法
JP2006152326A (ja) * 2004-11-25 2006-06-15 Tokyo Electron Ltd 蒸着装置
JP2006177704A (ja) * 2004-12-21 2006-07-06 Konica Minolta Medical & Graphic Inc 放射線画像変換パネルの製造装置及び放射線画像変換パネルの製造方法
JP2007038379A (ja) * 2005-08-05 2007-02-15 Mitsubishi Materials Corp 難削材の重切削加工で硬質被覆層がすぐれた耐チッピング性を発揮する表面被覆超硬合金製切削工具

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61276964A (ja) * 1985-05-31 1986-12-06 Hoya Corp 回転式成膜装置
JPH04280962A (ja) * 1991-02-26 1992-10-06 Kawatetsu Mining Co Ltd ヘテロ接合薄膜の形成方法及び形成装置
CN1793416A (zh) * 2005-12-12 2006-06-28 深圳国家863计划材料表面工程技术研究开发中心 金属薄膜复合制备装置及工艺

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005038646A (ja) * 2003-07-16 2005-02-10 Tokki Corp 蒸着装置における金属材料用蒸発源並びにその蒸着装置
JP2005307237A (ja) * 2004-04-19 2005-11-04 Ulvac Japan Ltd 薄膜顔料製造方法
JP2006152326A (ja) * 2004-11-25 2006-06-15 Tokyo Electron Ltd 蒸着装置
JP2006177704A (ja) * 2004-12-21 2006-07-06 Konica Minolta Medical & Graphic Inc 放射線画像変換パネルの製造装置及び放射線画像変換パネルの製造方法
JP2007038379A (ja) * 2005-08-05 2007-02-15 Mitsubishi Materials Corp 難削材の重切削加工で硬質被覆層がすぐれた耐チッピング性を発揮する表面被覆超硬合金製切削工具

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102851641A (zh) * 2011-06-30 2013-01-02 比亚迪股份有限公司 一种真空镀膜装置及金属高温真空镀膜方法
CN102851641B (zh) * 2011-06-30 2015-04-22 比亚迪股份有限公司 一种真空镀膜装置及金属高温真空镀膜方法
EP3017457A1 (en) * 2013-07-05 2016-05-11 Innovation Ulster Limited Method and system for modifying a substrate using a plasma
CN114774849A (zh) * 2022-03-17 2022-07-22 西安超纳精密光学有限公司 一种精确控制曲率的小口径大曲率局部离子溅射镀膜系统及方法
CN114774849B (zh) * 2022-03-17 2023-12-08 西安超纳精密光学有限公司 一种精确控制曲率的小口径大曲率局部离子溅射镀膜系统及方法

Also Published As

Publication number Publication date
KR20100071077A (ko) 2010-06-28
CN101842511B (zh) 2012-08-22
JP2009108381A (ja) 2009-05-21
HK1144447A1 (en) 2011-02-18
CN101842511A (zh) 2010-09-22
JP5384002B2 (ja) 2014-01-08

Similar Documents

Publication Publication Date Title
WO2009057678A1 (ja) 成膜装置及び成膜方法
WO2009031232A1 (ja) スパッタリング方法および装置
WO2009076322A3 (en) Methods and devices for processing a precursor layer in a group via environment
WO2007117583A3 (en) Cluster tool for epitaxial film formation
WO2007019188A3 (en) Manufacture of photovoltaic devices
EP2138604A3 (en) Film deposition apparatus, film deposition method, and computer readable storage medium
WO2008016650A3 (en) Methods of forming carbon-containing silicon epitaxial layers
EP1995996A4 (en) FILM GENERATING DEVICE AND METHOD FOR PRODUCING AN ILLUMINATING ELEMENT
TW200717470A (en) Method and apparatus for manufacturing of magneto-resistance effect element
TW200606995A (en) A magnetron sputtering device, a cylindrical cathode and a method of coating thin multicomponent films on a substrate
TW200637051A (en) Mask, mask manufacturing method, pattern forming apparatus, and pattern formation method
WO2008136504A1 (ja) Ｉｉｉ族窒化物半導体発光素子の製造方法
EP1960566A4 (en) HIGH-SPEED DEPOSITION SYSTEM FOR OXID THIN FILM GROWTH THROUGH REACTIVE COEVAPORATION
WO2011090704A3 (en) Method for producing microstructured templates and their use in providing pinning enhancements in superconducting films deposited thereon
WO2009069672A1 (ja) スパッタ装置及び成膜方法
WO2007024341A3 (en) Method of preparing a film layer-by-layer using plasma enhanced atomic layer deposition
TW200719394A (en) Method and device for peeling off film
WO2007044530A3 (en) Methods and apparatus for epitaxial film formation
WO2011028957A3 (en) Methods and devices for processing a precursor layer in a group via environment
WO2009031270A1 (ja) ウエハ再生方法およびウエハ再生装置
TW200700932A (en) Lithography process with an enhanced depth-of-depth
WO2008146438A1 (ja) 貼り合わせ装置、接着剤の溶解を防ぐ方法、及び貼り合わせ方法
WO2005118908A3 (en) Producing repetitive coatings on a flexible substrate
TW200734472A (en) Flexible metal clad laminate and method for manufacturing the same
WO2005061752A3 (en) Method for patterning films

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880114150.8

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08843596

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 20107008526

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08843596

Country of ref document: EP

Kind code of ref document: A1