WO2011028957A3 - Methods and devices for processing a precursor layer in a group via environment - Google Patents

Methods and devices for processing a precursor layer in a group via environment Download PDF

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Publication number
WO2011028957A3
WO2011028957A3 PCT/US2010/047748 US2010047748W WO2011028957A3 WO 2011028957 A3 WO2011028957 A3 WO 2011028957A3 US 2010047748 W US2010047748 W US 2010047748W WO 2011028957 A3 WO2011028957 A3 WO 2011028957A3
Authority
WO
WIPO (PCT)
Prior art keywords
methods
devices
processing
precursor layer
group via
Prior art date
Application number
PCT/US2010/047748
Other languages
French (fr)
Other versions
WO2011028957A2 (en
Inventor
Brent Bollman
Nathaniel Stanley
Matthew Diego Rail
Original Assignee
Brent Bollman
Nathaniel Stanley
Matthew Diego Rail
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Brent Bollman, Nathaniel Stanley, Matthew Diego Rail filed Critical Brent Bollman
Priority to EP10814527.7A priority Critical patent/EP2474044A4/en
Priority to JP2012528070A priority patent/JP2013504215A/en
Publication of WO2011028957A2 publication Critical patent/WO2011028957A2/en
Publication of WO2011028957A3 publication Critical patent/WO2011028957A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Abstract

Methods and devices for high-throughput printing of a precursor material for forming a film of a group IB-IIIA- chalcogenide compound are disclosed. In one embodiment, the method comprises forming a precursor layer on a substrate, the precursor is subsequently processed in a VIA environment.
PCT/US2010/047748 2009-09-02 2010-09-02 Methods and devices for processing a precursor layer in a group via environment WO2011028957A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP10814527.7A EP2474044A4 (en) 2009-09-02 2010-09-02 Methods and devices for processing a precursor layer in a group via environment
JP2012528070A JP2013504215A (en) 2009-09-02 2010-09-02 Methods and devices for processing precursor layers in a Group VIA environment

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US23941609P 2009-09-02 2009-09-02
US61/239,416 2009-09-02
US24101509P 2009-09-09 2009-09-09
US61/241,015 2009-09-09

Publications (2)

Publication Number Publication Date
WO2011028957A2 WO2011028957A2 (en) 2011-03-10
WO2011028957A3 true WO2011028957A3 (en) 2011-07-14

Family

ID=43649971

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/047748 WO2011028957A2 (en) 2009-09-02 2010-09-02 Methods and devices for processing a precursor layer in a group via environment

Country Status (3)

Country Link
EP (1) EP2474044A4 (en)
JP (1) JP2013504215A (en)
WO (1) WO2011028957A2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2469580A1 (en) * 2010-12-27 2012-06-27 Nexcis Improved interface between a I-III-VI2 material layer and a molybdenum substrate
JP2014513413A (en) * 2011-03-10 2014-05-29 サン−ゴバン グラス フランス Method for producing ternary compound semiconductor CZTSSe and thin film solar cell
JP5658112B2 (en) * 2011-09-15 2015-01-21 本田技研工業株式会社 Method for manufacturing chalcopyrite solar cell
WO2014002796A1 (en) * 2012-06-25 2014-01-03 京セラ株式会社 Photoelectric conversion apparatus and method for manufacturing photoelectric conversion apparatus
CN104885191B (en) 2012-12-20 2017-11-28 法国圣戈班玻璃厂 The method for producing compound semiconductor and thin-film solar cells
TWI449193B (en) * 2012-12-21 2014-08-11 Ind Tech Res Inst Method for forming an absorptive layer of a solar cell and thermal treatment device thereof
FR3005371B1 (en) * 2013-05-03 2015-05-29 Nexcis FORMATION OF A SEMICONDUCTOR LAYER I-III-VI2 BY THERMAL TREATMENT AND CHALCOGENISATION OF A METAL PRECURSOR I-III
NL2010809C2 (en) * 2013-05-16 2014-11-24 Smit Ovens Bv DEVICE AND METHOD FOR APPLYING A MATERIAL TO A SUBSTRATE.
KR101643579B1 (en) * 2013-08-01 2016-08-12 주식회사 엘지화학 Aggregate Phase Precursor for Manufacturing Light Absorbing Layer of Solar Cell and Method for Manufacturing the Same
CN107604340B (en) * 2017-08-31 2023-09-01 安徽光智科技有限公司 Chemical Vapor Deposition Furnace

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090050208A1 (en) * 2006-10-19 2009-02-26 Basol Bulent M Method and structures for controlling the group iiia material profile through a group ibiiiavia compound layer
WO2009033674A2 (en) * 2007-09-11 2009-03-19 Centrotherm Photovoltaics Ag Method and apparatus for thermally converting metallic precursor layers into semiconducting layers, and also solar module
US20090092744A1 (en) * 2007-10-05 2009-04-09 Mustafa Pinarbasi Roll to Roll Evaporation Tool for Solar Absorber Precursor Formation

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090183675A1 (en) * 2006-10-13 2009-07-23 Mustafa Pinarbasi Reactor to form solar cell absorbers

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090050208A1 (en) * 2006-10-19 2009-02-26 Basol Bulent M Method and structures for controlling the group iiia material profile through a group ibiiiavia compound layer
WO2009033674A2 (en) * 2007-09-11 2009-03-19 Centrotherm Photovoltaics Ag Method and apparatus for thermally converting metallic precursor layers into semiconducting layers, and also solar module
US20090092744A1 (en) * 2007-10-05 2009-04-09 Mustafa Pinarbasi Roll to Roll Evaporation Tool for Solar Absorber Precursor Formation

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2474044A4 *

Also Published As

Publication number Publication date
JP2013504215A (en) 2013-02-04
EP2474044A2 (en) 2012-07-11
WO2011028957A2 (en) 2011-03-10
EP2474044A4 (en) 2014-01-15

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