WO2009031270A1 - ウエハ再生方法およびウエハ再生装置 - Google Patents
ウエハ再生方法およびウエハ再生装置 Download PDFInfo
- Publication number
- WO2009031270A1 WO2009031270A1 PCT/JP2008/002285 JP2008002285W WO2009031270A1 WO 2009031270 A1 WO2009031270 A1 WO 2009031270A1 JP 2008002285 W JP2008002285 W JP 2008002285W WO 2009031270 A1 WO2009031270 A1 WO 2009031270A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- wafer
- wafer reclamation
- material layer
- different material
- film
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02032—Preparing bulk and homogeneous wafers by reclaiming or re-processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/676,186 US8563332B2 (en) | 2007-09-03 | 2008-08-25 | Wafer reclamation method and wafer reclamation apparatus |
JP2009531096A JP4519199B2 (ja) | 2007-09-03 | 2008-08-25 | ウエハ再生方法およびウエハ再生装置 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007228387 | 2007-09-03 | ||
JP2007-228387 | 2007-09-03 | ||
JP2008-133711 | 2008-05-22 | ||
JP2008133711 | 2008-05-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009031270A1 true WO2009031270A1 (ja) | 2009-03-12 |
Family
ID=40428594
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/002285 WO2009031270A1 (ja) | 2007-09-03 | 2008-08-25 | ウエハ再生方法およびウエハ再生装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8563332B2 (ja) |
JP (1) | JP4519199B2 (ja) |
TW (1) | TW200913044A (ja) |
WO (1) | WO2009031270A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009147104A (ja) * | 2007-12-14 | 2009-07-02 | K square micro solution 株式会社 | 使用済み半導体ウエハ又は基板の再生方法 |
JP2010056243A (ja) * | 2008-08-27 | 2010-03-11 | K square micro solution 株式会社 | 使用済み半導体ウエハの再生方法 |
WO2014097845A1 (ja) * | 2012-12-18 | 2014-06-26 | 昭和電工株式会社 | SiC基板の製造方法 |
KR20170137707A (ko) | 2015-04-13 | 2017-12-13 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | 웨이퍼를 재생하기 위한 탄소함유 실리콘 산화물을 포함하는 재료의 세정액 및 세정방법 |
JP2019527477A (ja) * | 2016-07-12 | 2019-09-26 | キューエムエイティ・インコーポレーテッド | ドナー基材を再生するための方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201310692A (zh) * | 2011-08-31 | 2013-03-01 | Solution Chemicals Inc | Led之基板重製方法 |
US8956954B2 (en) * | 2012-02-21 | 2015-02-17 | Chih-hao Chen | Method of processing wafers for saving material and protecting environment |
JP6418130B2 (ja) * | 2015-10-20 | 2018-11-07 | 株式会社Sumco | 半導体ウェーハの加工方法 |
US20180019169A1 (en) * | 2016-07-12 | 2018-01-18 | QMAT, Inc. | Backing substrate stabilizing donor substrate for implant or reclamation |
US20180033609A1 (en) * | 2016-07-28 | 2018-02-01 | QMAT, Inc. | Removal of non-cleaved/non-transferred material from donor substrate |
TWI768329B (zh) * | 2020-04-23 | 2022-06-21 | 煇特有限公司 | 半導體晶圓之物理乾式表面處理方法及其表面處理用組成物 |
CN116031146B (zh) * | 2023-02-16 | 2023-06-13 | 烟台显华高分子材料有限公司 | 一种SiC晶圆制造方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52131471A (en) * | 1976-04-28 | 1977-11-04 | Hitachi Ltd | Surface treatment of substrate |
JPH08167587A (ja) * | 1994-12-12 | 1996-06-25 | Yamaha Corp | 半導体ウェハの平坦化法 |
JPH10209117A (ja) * | 1997-01-24 | 1998-08-07 | Matsushita Electric Ind Co Ltd | ドライエッチングによる平坦化方法 |
JPH11288858A (ja) * | 1998-01-30 | 1999-10-19 | Canon Inc | Soi基板の再生方法及び再生基板 |
JP2002026096A (ja) * | 2000-06-20 | 2002-01-25 | Kobe Precision Inc | シリコンウエハーの品質評価方法及び再生方法 |
JP2003260641A (ja) * | 2002-03-04 | 2003-09-16 | Sumitomo Electric Ind Ltd | ウエハー加工方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4912063A (en) * | 1987-10-26 | 1990-03-27 | North Carolina State University | Growth of beta-sic thin films and semiconductor devices fabricated thereon |
SG71903A1 (en) * | 1998-01-30 | 2000-04-18 | Canon Kk | Process of reclamation of soi substrate and reproduced substrate |
JP3596363B2 (ja) | 1999-08-04 | 2004-12-02 | 三菱住友シリコン株式会社 | 半導体ウェーハの製造方法 |
US20010039101A1 (en) | 2000-04-13 | 2001-11-08 | Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag | Method for converting a reclaim wafer into a semiconductor wafer |
US7018554B2 (en) * | 2003-09-22 | 2006-03-28 | Cree, Inc. | Method to reduce stacking fault nucleation sites and reduce forward voltage drift in bipolar devices |
US20080318343A1 (en) * | 2007-06-25 | 2008-12-25 | Krishna Vepa | Wafer reclaim method based on wafer type |
-
2008
- 2008-08-25 JP JP2009531096A patent/JP4519199B2/ja active Active
- 2008-08-25 WO PCT/JP2008/002285 patent/WO2009031270A1/ja active Application Filing
- 2008-08-25 US US12/676,186 patent/US8563332B2/en active Active
- 2008-09-02 TW TW097133534A patent/TW200913044A/zh unknown
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52131471A (en) * | 1976-04-28 | 1977-11-04 | Hitachi Ltd | Surface treatment of substrate |
JPH08167587A (ja) * | 1994-12-12 | 1996-06-25 | Yamaha Corp | 半導体ウェハの平坦化法 |
JPH10209117A (ja) * | 1997-01-24 | 1998-08-07 | Matsushita Electric Ind Co Ltd | ドライエッチングによる平坦化方法 |
JPH11288858A (ja) * | 1998-01-30 | 1999-10-19 | Canon Inc | Soi基板の再生方法及び再生基板 |
JP2002026096A (ja) * | 2000-06-20 | 2002-01-25 | Kobe Precision Inc | シリコンウエハーの品質評価方法及び再生方法 |
JP2003260641A (ja) * | 2002-03-04 | 2003-09-16 | Sumitomo Electric Ind Ltd | ウエハー加工方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009147104A (ja) * | 2007-12-14 | 2009-07-02 | K square micro solution 株式会社 | 使用済み半導体ウエハ又は基板の再生方法 |
JP2010056243A (ja) * | 2008-08-27 | 2010-03-11 | K square micro solution 株式会社 | 使用済み半導体ウエハの再生方法 |
WO2014097845A1 (ja) * | 2012-12-18 | 2014-06-26 | 昭和電工株式会社 | SiC基板の製造方法 |
US9390924B2 (en) | 2012-12-18 | 2016-07-12 | Showa Denko K.K. | Method for manufacturing SiC substrate |
KR20170137707A (ko) | 2015-04-13 | 2017-12-13 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | 웨이퍼를 재생하기 위한 탄소함유 실리콘 산화물을 포함하는 재료의 세정액 및 세정방법 |
US10538718B2 (en) | 2015-04-13 | 2020-01-21 | Mitsubishi Gas Chemical Company, Inc. | Cleaning solution and cleaning method for material comprising carbon-incorporated silicon oxide for use in recycling wafer |
JP2019527477A (ja) * | 2016-07-12 | 2019-09-26 | キューエムエイティ・インコーポレーテッド | ドナー基材を再生するための方法 |
Also Published As
Publication number | Publication date |
---|---|
TW200913044A (en) | 2009-03-16 |
JP4519199B2 (ja) | 2010-08-04 |
US8563332B2 (en) | 2013-10-22 |
JPWO2009031270A1 (ja) | 2010-12-09 |
US20100173431A1 (en) | 2010-07-08 |
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