WO2009028055A1 - スパッタリングによる成膜方法とその装置 - Google Patents
スパッタリングによる成膜方法とその装置 Download PDFInfo
- Publication number
- WO2009028055A1 WO2009028055A1 PCT/JP2007/066750 JP2007066750W WO2009028055A1 WO 2009028055 A1 WO2009028055 A1 WO 2009028055A1 JP 2007066750 W JP2007066750 W JP 2007066750W WO 2009028055 A1 WO2009028055 A1 WO 2009028055A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- supporting surface
- sputtering
- substrate
- sputtering target
- target
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/225—Oblique incidence of vaporised material on substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
- C23C14/044—Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/548—Controlling the composition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3455—Movable magnets
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2007/066750 WO2009028055A1 (ja) | 2007-08-29 | 2007-08-29 | スパッタリングによる成膜方法とその装置 |
CN2007801000632A CN101765677B (zh) | 2007-08-29 | 2007-08-29 | 通过溅射的成膜方法及其溅射设备 |
JP2009529905A JP4503098B2 (ja) | 2007-08-29 | 2007-08-29 | スパッタリングによる成膜方法とその装置 |
US12/684,359 US8043483B2 (en) | 2007-08-29 | 2010-01-08 | Film forming method by sputtering and sputtering apparatus thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2007/066750 WO2009028055A1 (ja) | 2007-08-29 | 2007-08-29 | スパッタリングによる成膜方法とその装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/684,359 Continuation US8043483B2 (en) | 2007-08-29 | 2010-01-08 | Film forming method by sputtering and sputtering apparatus thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009028055A1 true WO2009028055A1 (ja) | 2009-03-05 |
Family
ID=40386799
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2007/066750 WO2009028055A1 (ja) | 2007-08-29 | 2007-08-29 | スパッタリングによる成膜方法とその装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8043483B2 (ja) |
JP (1) | JP4503098B2 (ja) |
CN (1) | CN101765677B (ja) |
WO (1) | WO2009028055A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100313603A1 (en) * | 2009-06-12 | 2010-12-16 | Naoyuki Fukumoto | Method for manufacturing molding die, method for manufacturing glass gob, and method for manufacturing glass molded article |
WO2011058812A1 (ja) * | 2009-11-10 | 2011-05-19 | キヤノンアネルバ株式会社 | スパッタリング装置による成膜方法およびスパッタリング装置 |
JP5280459B2 (ja) * | 2008-12-25 | 2013-09-04 | キヤノンアネルバ株式会社 | スパッタリング装置 |
CN116334552A (zh) * | 2023-04-07 | 2023-06-27 | 宁波招宝磁业有限公司 | 一种钕铁硼铸片溅射加工方法 |
JP2023091409A (ja) * | 2021-12-20 | 2023-06-30 | キヤノントッキ株式会社 | スパッタ装置 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101842890A (zh) * | 2007-11-09 | 2010-09-22 | 佳能安内华股份有限公司 | 在线型晶圆输送装置 |
CN102037154B (zh) * | 2008-08-18 | 2013-03-27 | 佳能安内华股份有限公司 | 磁铁单元和磁控溅射装置 |
US9034150B2 (en) * | 2012-11-29 | 2015-05-19 | Seagate Technology Llc | Thin film with tuned anisotropy and magnetic moment |
KR102115476B1 (ko) * | 2013-02-28 | 2020-05-27 | 삼성디스플레이 주식회사 | 스퍼터링 장치 |
KR20150078549A (ko) * | 2013-12-31 | 2015-07-08 | 한국과학기술원 | 집적형 박막 태양전지의 제조 장치 |
US20160268127A1 (en) * | 2015-03-13 | 2016-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Oxide and Manufacturing Method Thereof |
CN104851550A (zh) * | 2015-05-26 | 2015-08-19 | 电子科技大学 | 一种大面积均匀各向异性磁芯膜及其制备方法 |
JP6738976B2 (ja) | 2018-02-06 | 2020-08-12 | キヤノンアネルバ株式会社 | 基板処理装置および基板処理方法 |
TWI702294B (zh) * | 2018-07-31 | 2020-08-21 | 日商田中貴金屬工業股份有限公司 | 磁氣記錄媒體用濺鍍靶 |
US11557473B2 (en) * | 2019-04-19 | 2023-01-17 | Applied Materials, Inc. | System and method to control PVD deposition uniformity |
TW202104628A (zh) | 2019-04-19 | 2021-02-01 | 美商應用材料股份有限公司 | 用於控制pvd沉積均勻性的系統及方法 |
US11280855B2 (en) | 2019-07-29 | 2022-03-22 | Nxp B.V. | Magnetic field sensor, system, and oblique incident deposition fabrication method |
US11631535B1 (en) | 2021-10-07 | 2023-04-18 | Western Digital Technologies, Inc. | Longitudinal sensor bias structures and method of formation thereof |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60113330A (ja) * | 1983-11-22 | 1985-06-19 | Dainippon Printing Co Ltd | 磁気記録媒体の製造方法 |
JPH02221371A (ja) * | 1989-02-22 | 1990-09-04 | Toppan Printing Co Ltd | イオンビームスパッタ方法及びその装置並びにそれに用いるスパッタターゲット |
JPH08296042A (ja) * | 1995-04-17 | 1996-11-12 | Read Rite Corp | 複数イオンビームによる絶縁薄膜の形成方法 |
JP2001195711A (ja) * | 1999-11-22 | 2001-07-19 | Internatl Business Mach Corp <Ibm> | 低応力かつ低抵抗のロジウム(Rh)リードの製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0686354B2 (ja) | 1992-11-09 | 1994-11-02 | 科学技術庁金属材料技術研究所長 | 結晶配向薄膜製造装置 |
US6086727A (en) * | 1998-06-05 | 2000-07-11 | International Business Machines Corporation | Method and apparatus to improve the properties of ion beam deposited films in an ion beam sputtering system |
US6224718B1 (en) * | 1999-07-14 | 2001-05-01 | Veeco Instruments, Inc. | Target assembly for ion beam sputter deposition with multiple paddles each having targets on both sides |
JP4474109B2 (ja) * | 2003-03-10 | 2010-06-02 | キヤノン株式会社 | スパッタ装置 |
CN1234906C (zh) * | 2003-04-11 | 2006-01-04 | 精碟科技股份有限公司 | 镀膜设备 |
US6818961B1 (en) | 2003-06-30 | 2004-11-16 | Freescale Semiconductor, Inc. | Oblique deposition to induce magnetic anisotropy for MRAM cells |
JP2005213585A (ja) * | 2004-01-29 | 2005-08-11 | Konica Minolta Opto Inc | マグネトロンスパッタ装置 |
JP2008019498A (ja) | 2006-07-14 | 2008-01-31 | Seiko Epson Corp | 成膜方法及び成膜装置 |
-
2007
- 2007-08-29 JP JP2009529905A patent/JP4503098B2/ja active Active
- 2007-08-29 WO PCT/JP2007/066750 patent/WO2009028055A1/ja active Application Filing
- 2007-08-29 CN CN2007801000632A patent/CN101765677B/zh active Active
-
2010
- 2010-01-08 US US12/684,359 patent/US8043483B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60113330A (ja) * | 1983-11-22 | 1985-06-19 | Dainippon Printing Co Ltd | 磁気記録媒体の製造方法 |
JPH02221371A (ja) * | 1989-02-22 | 1990-09-04 | Toppan Printing Co Ltd | イオンビームスパッタ方法及びその装置並びにそれに用いるスパッタターゲット |
JPH08296042A (ja) * | 1995-04-17 | 1996-11-12 | Read Rite Corp | 複数イオンビームによる絶縁薄膜の形成方法 |
JP2001195711A (ja) * | 1999-11-22 | 2001-07-19 | Internatl Business Mach Corp <Ibm> | 低応力かつ低抵抗のロジウム(Rh)リードの製造方法 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5280459B2 (ja) * | 2008-12-25 | 2013-09-04 | キヤノンアネルバ株式会社 | スパッタリング装置 |
US20100313603A1 (en) * | 2009-06-12 | 2010-12-16 | Naoyuki Fukumoto | Method for manufacturing molding die, method for manufacturing glass gob, and method for manufacturing glass molded article |
WO2011058812A1 (ja) * | 2009-11-10 | 2011-05-19 | キヤノンアネルバ株式会社 | スパッタリング装置による成膜方法およびスパッタリング装置 |
JP5364172B2 (ja) * | 2009-11-10 | 2013-12-11 | キヤノンアネルバ株式会社 | スパッタリング装置による成膜方法およびスパッタリング装置 |
JP2023091409A (ja) * | 2021-12-20 | 2023-06-30 | キヤノントッキ株式会社 | スパッタ装置 |
JP7473520B2 (ja) | 2021-12-20 | 2024-04-23 | キヤノントッキ株式会社 | スパッタ装置 |
CN116334552A (zh) * | 2023-04-07 | 2023-06-27 | 宁波招宝磁业有限公司 | 一种钕铁硼铸片溅射加工方法 |
CN116334552B (zh) * | 2023-04-07 | 2023-09-05 | 宁波招宝磁业有限公司 | 一种钕铁硼铸片溅射加工方法 |
Also Published As
Publication number | Publication date |
---|---|
US20100133090A1 (en) | 2010-06-03 |
JP4503098B2 (ja) | 2010-07-14 |
US8043483B2 (en) | 2011-10-25 |
JPWO2009028055A1 (ja) | 2010-11-25 |
CN101765677A (zh) | 2010-06-30 |
CN101765677B (zh) | 2012-01-25 |
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