WO2006113170A3 - Sputtering system - Google Patents

Sputtering system Download PDF

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Publication number
WO2006113170A3
WO2006113170A3 PCT/US2006/013036 US2006013036W WO2006113170A3 WO 2006113170 A3 WO2006113170 A3 WO 2006113170A3 US 2006013036 W US2006013036 W US 2006013036W WO 2006113170 A3 WO2006113170 A3 WO 2006113170A3
Authority
WO
WIPO (PCT)
Prior art keywords
chamber
wafers
pallet
sputtering chamber
sputtering
Prior art date
Application number
PCT/US2006/013036
Other languages
French (fr)
Other versions
WO2006113170A2 (en
Inventor
Ravi Mullapudi
Dean Smith
Edward Strepka
Srikanth Dasaradhi
Original Assignee
Tango Systems Inc
Ravi Mullapudi
Dean Smith
Edward Strepka
Srikanth Dasaradhi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/107,108 external-priority patent/US7799190B2/en
Priority claimed from US11/107,110 external-priority patent/US7794574B2/en
Priority claimed from US11/107,619 external-priority patent/US7479210B2/en
Priority claimed from US11/107,620 external-priority patent/US7682495B2/en
Priority claimed from US11/107,111 external-priority patent/US20060231389A1/en
Priority claimed from US11/107,109 external-priority patent/US20060231388A1/en
Priority claimed from US11/106,864 external-priority patent/US7744730B2/en
Priority claimed from US11/107,283 external-priority patent/US7785455B2/en
Application filed by Tango Systems Inc, Ravi Mullapudi, Dean Smith, Edward Strepka, Srikanth Dasaradhi filed Critical Tango Systems Inc
Publication of WO2006113170A2 publication Critical patent/WO2006113170A2/en
Publication of WO2006113170A3 publication Critical patent/WO2006113170A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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  • General Physics & Mathematics (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
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  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

A multi-chamber processing system is described for depositing materials on multiple workpieces (wafers, display panels, or any other workpieces) at a time in a vacuum chamber. The system includes a sputtering chamber and a separate pre-clean chamber, where wafers can be transferred between the two chambers by a robotic arm without breaking a vacuum. The wafers are mounted one-by-one onto a rotating pallet in the pre-cleaning chamber and sputtering chamber. The pallet is firmly fixed to a rotatable table in the sputtering chamber. Multiple targets, of the same or different materials, may concurrently deposit material on the wafers as the pallet is rotating. Multiple magnets (one for each target) in the magnetron assembly in the sputtering chamber oscillate over their respective targets.
PCT/US2006/013036 2005-04-14 2006-04-06 Sputtering system WO2006113170A2 (en)

Applications Claiming Priority (16)

Application Number Priority Date Filing Date Title
US11/107,111 2005-04-14
US11/107,108 US7799190B2 (en) 2005-04-14 2005-04-14 Target backing plate for sputtering system
US11/107,283 2005-04-14
US11/107,110 2005-04-14
US11/106,864 2005-04-14
US11/107,110 US7794574B2 (en) 2005-04-14 2005-04-14 Top shield for sputtering system
US11/107,109 2005-04-14
US11/107,619 US7479210B2 (en) 2005-04-14 2005-04-14 Temperature control of pallet in sputtering system
US11/107,620 US7682495B2 (en) 2005-04-14 2005-04-14 Oscillating magnet in sputtering system
US11/107,111 US20060231389A1 (en) 2005-04-14 2005-04-14 Insulated pallet in cleaning chamber
US11/107,108 2005-04-14
US11/107,109 US20060231388A1 (en) 2005-04-14 2005-04-14 Multi-station sputtering and cleaning system
US11/107,620 2005-04-14
US11/107,619 2005-04-14
US11/106,864 US7744730B2 (en) 2005-04-14 2005-04-14 Rotating pallet in sputtering system
US11/107,283 US7785455B2 (en) 2005-04-14 2005-04-14 Cross-contaminant shield in sputtering system

Publications (2)

Publication Number Publication Date
WO2006113170A2 WO2006113170A2 (en) 2006-10-26
WO2006113170A3 true WO2006113170A3 (en) 2007-05-03

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KR (1) KR20070121838A (en)
WO (1) WO2006113170A2 (en)

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JP5310283B2 (en) * 2008-06-27 2013-10-09 東京エレクトロン株式会社 Film forming method, film forming apparatus, substrate processing apparatus, and storage medium
US10106883B2 (en) 2011-11-04 2018-10-23 Intevac, Inc. Sputtering system and method using direction-dependent scan speed or power
EP2917929A4 (en) 2012-11-12 2016-07-06 Demaray Llc Adiabatic planar waveguide coupler transformer
KR101689016B1 (en) * 2015-03-13 2016-12-22 (주) 씨앤아이테크놀로지 In-line Sputtering System with Rotary Tray Holders and Manufacturing Method of Packages Shielding Thereof
KR102071674B1 (en) 2017-07-19 2020-01-30 주식회사 임나노텍 Recycling system of semiconductor sputtering electrostatic chuck using laser welding
US11251028B2 (en) 2018-05-12 2022-02-15 Applied Materials, Inc. Pre-clean chamber with integrated shutter garage
CN111081524B (en) * 2019-12-31 2022-02-22 江苏鲁汶仪器有限公司 Rotatable Faraday cleaning device and plasma processing system

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JPS6086272A (en) * 1983-10-18 1985-05-15 Anelva Corp Sputtering apparatus
US4600492A (en) * 1984-07-25 1986-07-15 Kabushiki Kaisha Tokuda Seisakusho Magnet driving method and device for same
DE3934887A1 (en) * 1988-10-19 1990-04-26 Fuji Photo Film Co Ltd Deposition of thin magnetic films with constant thickness - uses sputtering method in which substrates perform specified planetary motions
JPH02179871A (en) * 1988-12-28 1990-07-12 Matsushita Electric Ind Co Ltd Formation of thin film and magnetron sputtering device
US5833815A (en) * 1996-04-24 1998-11-10 Anelva Corporation Sputter deposition system
US20020175074A1 (en) * 2001-04-13 2002-11-28 Tza-Jing Gung Tubular magnet as center pole in unbalanced sputtering magnetron
US20030217913A1 (en) * 2002-05-21 2003-11-27 Applied Materials, Inc. Small planetary magnetron

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JPS6086272A (en) * 1983-10-18 1985-05-15 Anelva Corp Sputtering apparatus
US4600492A (en) * 1984-07-25 1986-07-15 Kabushiki Kaisha Tokuda Seisakusho Magnet driving method and device for same
DE3934887A1 (en) * 1988-10-19 1990-04-26 Fuji Photo Film Co Ltd Deposition of thin magnetic films with constant thickness - uses sputtering method in which substrates perform specified planetary motions
JPH02179871A (en) * 1988-12-28 1990-07-12 Matsushita Electric Ind Co Ltd Formation of thin film and magnetron sputtering device
US5833815A (en) * 1996-04-24 1998-11-10 Anelva Corporation Sputter deposition system
US20020175074A1 (en) * 2001-04-13 2002-11-28 Tza-Jing Gung Tubular magnet as center pole in unbalanced sputtering magnetron
US20030217913A1 (en) * 2002-05-21 2003-11-27 Applied Materials, Inc. Small planetary magnetron

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