TWI404226B - 製造發光裝置之方法 - Google Patents
製造發光裝置之方法 Download PDFInfo
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- TWI404226B TWI404226B TW094139750A TW94139750A TWI404226B TW I404226 B TWI404226 B TW I404226B TW 094139750 A TW094139750 A TW 094139750A TW 94139750 A TW94139750 A TW 94139750A TW I404226 B TWI404226 B TW I404226B
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- Prior art keywords
- optical element
- die
- emitting device
- bonding
- optical component
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- 238000000034 method Methods 0.000 title claims description 47
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 230000003287 optical effect Effects 0.000 claims abstract description 140
- 239000000463 material Substances 0.000 claims abstract description 67
- 239000011248 coating agent Substances 0.000 claims abstract description 14
- 238000000576 coating method Methods 0.000 claims abstract description 14
- 238000002844 melting Methods 0.000 claims abstract description 9
- 230000008018 melting Effects 0.000 claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 20
- 238000006243 chemical reaction Methods 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 230000006835 compression Effects 0.000 claims description 4
- 238000007906 compression Methods 0.000 claims description 4
- 230000008602 contraction Effects 0.000 claims description 4
- BHHYHSUAOQUXJK-UHFFFAOYSA-L zinc fluoride Chemical compound F[Zn]F BHHYHSUAOQUXJK-UHFFFAOYSA-L 0.000 claims description 4
- 229910000464 lead oxide Inorganic materials 0.000 claims description 3
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 3
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims description 3
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 3
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 2
- 238000005286 illumination Methods 0.000 claims 2
- 235000014692 zinc oxide Nutrition 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims 1
- 229910010272 inorganic material Inorganic materials 0.000 claims 1
- 239000011147 inorganic material Substances 0.000 claims 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 claims 1
- 229910001947 lithium oxide Inorganic materials 0.000 claims 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 claims 1
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 claims 1
- 229910001950 potassium oxide Inorganic materials 0.000 claims 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 claims 1
- 229910001948 sodium oxide Inorganic materials 0.000 claims 1
- 239000011787 zinc oxide Substances 0.000 claims 1
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical class [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 claims 1
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 14
- 238000001228 spectrum Methods 0.000 description 14
- 239000011521 glass Substances 0.000 description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 239000010931 gold Substances 0.000 description 8
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- 229910052737 gold Inorganic materials 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 229910052787 antimony Inorganic materials 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 239000011133 lead Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052950 sphalerite Inorganic materials 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 229910052984 zinc sulfide Inorganic materials 0.000 description 4
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
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- 238000005530 etching Methods 0.000 description 3
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- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
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- 230000001681 protective effect Effects 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000000565 sealant Substances 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 3
- 229910004613 CdTe Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
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- 229910052782 aluminium Inorganic materials 0.000 description 2
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- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
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- 230000008859 change Effects 0.000 description 2
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- 229910052733 gallium Inorganic materials 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 2
- 238000009877 rendering Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 2
- 229910052596 spinel Inorganic materials 0.000 description 2
- 239000011029 spinel Substances 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910017115 AlSb Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910016315 BiPb Inorganic materials 0.000 description 1
- 229910016314 BiPbSn Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 240000002329 Inga feuillei Species 0.000 description 1
- QIVBCDIJIAJPQS-VIFPVBQESA-N L-tryptophane Chemical compound C1=CC=C2C(C[C@H](N)C(O)=O)=CNC2=C1 QIVBCDIJIAJPQS-VIFPVBQESA-N 0.000 description 1
- 229910002319 LaF3 Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229930040373 Paraformaldehyde Natural products 0.000 description 1
- 229920002675 Polyoxyl Polymers 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910007637 SnAg Inorganic materials 0.000 description 1
- 229910008433 SnCU Inorganic materials 0.000 description 1
- 229910006913 SnSb Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001786 chalcogen compounds Chemical class 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000005283 halide glass Substances 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- YOBAEOGBNPPUQV-UHFFFAOYSA-N iron;trihydrate Chemical compound O.O.O.[Fe].[Fe] YOBAEOGBNPPUQV-UHFFFAOYSA-N 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- -1 polyoxymethylene Polymers 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 235000003270 potassium fluoride Nutrition 0.000 description 1
- 239000011698 potassium fluoride Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- BYMUNNMMXKDFEZ-UHFFFAOYSA-K trifluorolanthanum Chemical compound F[La](F)F BYMUNNMMXKDFEZ-UHFFFAOYSA-K 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/20—Controlling the colour of the light
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
- Led Devices (AREA)
Description
本發明一般係關於發光裝置,更特定言之,係關於將一光學元件接合至一或多個發光裝置晶粒。
半導體發光裝置(LED)通常覆蓋有一光學元件以保護半導體結構、增加光擷取效率且有助於聚焦所發射之光。囊封LED所使用的一材料類型係環氧樹脂。然而,環氧樹脂係一低折射率材料,因此在減小損失方面,不像更高折射率材料那樣有效,此係由於在半導體/低折射率囊封劑介面處發生全內反射。此外,環氧樹脂與其他有機密封劑在與LED(採用高溫及/或短波長進行操作)一起使用時,通常會變黃。而且環氧樹脂密封劑通常具有熱膨脹係數,其與LED中的半導體材料之熱膨脹係數匹配較差。因此,環氧樹脂密封劑使LED在加熱或冷卻時遭受機械應力,並且可能會損壞LED。
因此,需要一種具有已增強光擷取效率且防止變黃或其他列化的已改善光學元件及一種將該光學元件接合至一LED之方法。
依據本發明之一具體實施例,藉由將至少一發光裝置(LED)晶粒安裝於一子基板上且隨後將一光學元件接合至該LED晶粒來製造一種裝置。該LED晶粒係透過接觸元件(例如,焊塊或墊)而電耦合至該子基板,該等接觸元件之熔點溫度係高於將該光學元件接合至該LED晶粒所使用的熔點溫度。在一實施方案中,將一單一光學元件接合至安裝於該子基板之複數個LED晶粒且該子基板與該光學元件具有近似相同的熱膨脹係數。或者,可使用許多光學元件。該LED或該光學元件可覆蓋有一波長轉換材料塗層。在一實施方案中,測試該裝置以決定所產生波長並改變(即,增大或可能減小)該波長轉換材料之厚度,直到產生所需波長。
圖1A說明一透明光學元件102與安裝於一子基板106上之一發光二極體(LED)晶粒104之側視圖。依據本發明之一具體實施例,將把該光學元件102接合至該LED晶粒104。圖1B說明已接合至該LED晶粒104之光學元件102。
本文所使用的術語"透明"指示,如此所述元件(例如,"透明光學元件")可按LED之發射波長發射具有小於大約50%、較佳地小於大約10%之單程損失(由於吸收或散射)之光。LED之發射波長可在電磁頻譜的紅外線、可見光或紫外線區域內。熟習此項技術者將認識到:藉由透射路徑長度及吸收常數之各種組合,可滿足"小於50%的單程損失"及"小於10%的單程損失"之狀況。
圖1A與1B所示LED晶粒104包括具有n型導電率之一第一半導體層108(n層)及具有p型導電率之一第二半導體層110(p層)。半導體層108與110係電耦合至一作用區域112。作用區域112係(例如)與層108及110之介面關聯之一p-n二極體接面。或者,作用區域112包括摻雜為n型或p型或未摻雜之一或多個半導體層。LED晶粒104包括一n接點114與一p接點116,其係分別電耦合至半導體層108與110。接點114與接點116係置放於LED晶粒104之相同側上之一"覆晶"配置中。耦合至該n層108之一透明頂置板118係由一材料(例如,藍寶石、SiC、GaN、GaP、金剛石、立方氧化鋯(ZrO2)、氮氧化鋁(AlON)、AlN、尖晶石、ZnS、碲氧化物、鉛氧化物、鎢氧化物、多晶氧化鋁(透明氧化鋁)及ZnO)形成。
橫跨接點114與116施加一適合的電壓時,作用區域112會發光。在替代實施方案中,使層108與110,以及個別接點114與116之導電率類型反轉。亦即,層108為p型層,接點114為p接點,層110為n型層,而接點116為n接點。
半導體層108及110以及作用區域112係由III-V半導體形成,其包括但不限於AlN、AlP、AlAs、AlSb、GaN、GaP、GaAs、GaSb、InN、InP、InAs、InSb;II-VI半導體,其包括但不限於ZnS、ZnSe、CdSe、ZnO、CdTe;IV族半導體,其包括但不限於Ge、Si、SiC及其混合物或合金。
在一實施方案中,接點114及116為採用金屬形成的金屬接點,該等金屬包括但不限於金、銀、鎳、鋁、鈦、鉻、鉑、鈀、銠、錸、釕、鎢及其混合物或合金。
儘管圖1A與1B說明LED晶粒104之一特定結構,但本發明係獨立於該LED晶粒之該結構。因此,可使用與所示特定組態不同的其他類型的LED組態。此外,LED晶粒104中的半導體層之數目與作用區域112之詳細結構可不同。應注意,各圖式中所顯示的LED晶粒104之各種元件之尺度並未按比例繪製。
經由接觸元件120(例如,焊塊、墊)或其他適當元件(例如,一層焊料)而將LED晶粒104安裝於子基板106。為簡單起見,本文中有時將接觸元件120稱作塊120。塊120由Au、Sn、Ag、Sb、Cu、Pb、Bi、Cd、In、Zn或其合金(包括AuSn、SnSb、SnCu、SnAg、SnAgBi、InSn、BiPbSn、BiPbCd、BiPbIn、InCd,BiPb、BiSn、InAg、BiCd、InBi、InGa)製造,或熔化溫度大於將光學元件102接合至LED晶粒104所使用溫度之其他適當材料,但較佳地為Au或AuSn。在一實施方案中,塊120之熔化溫度係大於250℃且較佳地大於300℃。子基板106可為(例如)矽、氧化鋁或AlN且可包括用於背側連接之通道。
舉例而言,使用熱聲接合來將LED晶粒104安裝於子基板106。例如,在熱聲接合程序期間,使具有塊120之LED晶粒104與處於所需位置中的子基板106對齊,同時將子基板106加熱至大約150至160℃。在施加聲振動的同時,藉由一接合工具而將一接合力(例如大約50至100 gm/塊)施加於該LED晶粒104。如需要可使用其他程序(例如熱壓縮)來將LED晶粒104接合至該子基板106。如此項技術中所熟知,採用熱壓縮時,通常需要更高溫度與更大接合力。
在某些具體實施例中,可對LED晶粒104與子基板106使用未填滿材料。該未填滿材料可具有良好的導熱率且具有與LED晶粒104及子基板106近似匹配之一熱膨脹係數。在另一具體實施例中,可將一保護側塗層((例如)聚矽氧或其他適當材料)施加於LED晶粒104及子基板106之側。該保護側塗層充當一密封劑且限制LED 104與塊120曝露於污染物與環境。
若要瞭解由Au或Au/Sn來製造塊120、具有背側通道之子基板及採用Au或Au/Sn塊將LED晶粒接合至一子基板之更多有關資訊,可參閱Ashim S.Haque於2004年5月5日所申請的美國序列號碼10/840,459,其具有與本揭示內容相同的受讓人且係以引用方式併入本文中。然而,應明白,本發明不限於任何特定的子基板類型且如需要可使用任何所需子基板組態。
將LED晶粒104安裝於子基板106之後,可將光學元件102熱接合至該LED晶粒104。在一具體實施例中,將一層接合材料施加於光學元件102之底部表面以形成透明接合層122,其係用以將光學元件102接合至LED晶粒104。在某些具體實施例中,可將透明接合層122施加於LED晶粒104之頂部表面,例如,施加於頂置板118(如圖1A之虛線122所示)。可在將LED晶粒104安裝於子基板106之前或之後,將接合層122施加於LED晶粒104。或者,不使用接合層而將光學元件102直接接合至LED晶粒104,例如,接合至頂置板118。透明接合層122之厚度為,例如,大約10埃()至大約100微米(μm),且較佳地為大約1000至大約10 μm,更明確言之,為大約0.5 μm至大約5 μm。接合材料係藉由(例如)傳統沈積技術施加,該等技術包括但不限於旋轉、噴灑、噴濺、蒸發、化學汽相沈積(CVD),或該接合材料係藉由(例如)金屬有機化學汽相沈積(MOCVD)、汽相磊晶(VPE)、液相磊晶(LPE)或分子束磊晶(MBE)生長。在一具體實施例中,該光學元件102可覆蓋有一波長轉換材料124,下文將更詳細地加以說明。
在一實施方案中,透明接合層122之接合材料係由玻璃形成,例如SF59、LaSF 3、LaSF N18、SLAH51、LAF10、NZK7、NLAF21、LASFN35、SLAM60或其混合物,其係從製造廠(例如,由位於Somerville,NJ的Duryea、Pa及Ohara公司合併而成的Schott玻璃技術股份有限公司)獲得。接合層122亦可由高折射率玻璃形成,例如(Ge、As、Sb、Ga)(S、Se、Te、Cl、Br)硫族元素化合物或硫族元素-鹵化物玻璃。
在其他實施方案中,接合層122由III-V半導體形成,其包括但不限於GaP、InGaP、GaAs及GaN;II-VI半導體,其包括但不限於ZnS、ZnSe、ZnTe、CdS、CdSe及CdTe;IV族半導體與化合物,其包括但不限於Si及Ge;有機半導體、金屬氧化物,其包括但不限於銻、鉍、硼、銅、鈮、鎢、鈦、鎳、鉛、碲、磷、鉀、鈉、鋰、鋅、鋯、銦錫或鉻之氧化物;金屬氟化物,其包括但不限於氟化鎂、氟化鈣、氟化鉀、氟化鈉及氟化鋅;金屬,其包括但不限於Zn、In、Mg及Sn;釔鋁石榴石(YAG)、磷化物、砷化物、銻化物、氮化物、高折射率有機化合物及其混合物或合金。
在將LED晶粒104之n接點與p接點配置於晶粒104之相反側上之實施方案中,可採用(例如)傳統微影蝕刻與蝕刻技術來圖案化透明接合層122或122’以留出頂部接點、不採用接合材料加以覆蓋,從而允許接點與光學元件102上之一金屬化層電接觸,該金屬化層可充當引線,如Michael D.Camras等人於2001年6月12日所申請的標題為"具有已改善光擷取效率之發光二極體"之美國序列號碼09/880,204(申請案第2002/0030194號)中所述,以引用方式將該揭示內容併入本文。
在一實施方案中,光學元件102由Sienna技術公司製造的光學玻璃、高折射率玻璃、GaP、CZ、ZnS、SiC、藍寶石、金剛石、立方氧化鋯(ZrO2)、AlON形成;從位於Ontario,NY的Optimax Systems公司所獲得的多晶氧化鋁(透明氧化鋁)、尖晶石、Schott玻璃LaFN21、Schott玻璃LaSFN35、LaF2、LaF3及LaF10;Pb、Te、Zn、Ga、Sb、Cu、Ca、P、La、Nb或W之氧化物,或以上列出的金屬中的任何金屬,其中可將該等材料用作透明接合層122中之接合材料,但不包括厚金屬層。
透明光學元件102可具有一形狀及一尺寸,以便從LED晶粒104進入光學元件102的光將以接近於垂直入射的入射角與光學元件102的表面102a相交。因而可減小表面102a與環境媒介(通常為空氣)之介面中的全內反射。此外,因為入射角的範圍比較窄,所以藉由施加傳統抗反射塗層於表面102a,可以減小表面102a上的菲涅爾反射損失。光學元件102之形狀為(例如)球形之一部分(例如半球面)、一韋氏球形(斜截球形)或小於半球形的球形之一部分。或者,光學元件102的形狀為橢圓形之一部分,例如斜截橢圓形。隨著光學元件102之尺寸的增長,表面102a上、從LED晶粒104進入光學元件102的光之入射角更接近於垂直入射角。因此,透明光學元件102的基礎之長度與LED晶粒104的表面之長度的最小比率較佳為大於約1,更佳大於約2。
將LED晶粒104安裝於子基板106上之後,可將光學元件102熱接合至該LED晶粒104。例如,將光學元件102接合至LED晶粒104時,使接合層122之溫度升至大約室溫與接點塊120之熔化溫度之間之一溫度,例如在大約150℃至450℃之間,更特定言之,在大約200℃與400℃之間,且在接合溫度下,將光學元件102與LED晶粒104壓合在一起,持續大約一秒至大約6小時之一時間週期,較佳地持續大約30秒至大約30分鐘,其中壓力為大約1英鎊/平方英寸(psi)至大約6000 psi。舉例而言,可施加大約700 psi至大約3000 psi之一壓力,持續時間在大約3至15分鐘之間。
將光學元件102熱接合至LED晶粒104需要採用高溫。藉由使用具有高熔點(即,高於熱接合程序中所使用的高溫)之塊120,可在將光學元件102接合至LED晶粒104之前,將LED晶粒104安裝於子基板106,而不會損壞LED晶粒/子基板連接。在接合光學元件102之前,將LED晶粒104安裝於子基板106可簡化取置程序。
若要瞭解將光學元件102接合至LED晶粒104之說明內容,可參閱美國申請案第2002/0030194號;Michael D.Camras等人於2003年7月31日所申請的標題為"具有已改善光擷取效率之發光裝置"之序列號碼10/633,054;Michael D.Camras等人於2000年9月12日所申請的標題為"具有已改善光擷取效率之發光二極體"之序列號碼09/660,317;Douglas Pocius於2001年3月30日所申請的標題為"在一發光裝置之表面上形成一用於改善光擷取之光學元件"之序列號碼09/823,841(申請案第2002/0141006號),該等申請案具有與本申請案相同的受讓人且以引用方式將其併入本文中。此外,可採用以引用方式併入本文之美國專利第5,502,316與5,376,580號中所揭示裝置來執行上述將光學元件102接合至LED晶粒104之程序,該等裝置先前係用以在高溫與壓力下,將半導體晶圓彼此接合。所揭示裝置可加以修改以根據需要適合LED晶粒及光學元件。或者,執行以上說明的接合程序可採用傳統垂直壓合方法。
應注意,由於熱接合程序,光學元件102與LED晶粒104之熱膨脹係數(CTE)之間的失配,加熱或冷卻時,可導致光學元件102與LED晶粒104分離。因此,光學元件102由CTE與LED晶粒104之CTE近似匹配之材料形成。使CTE近似匹配可額外減小接合層122與光學元件102所引起的LED晶粒104中之應力。藉由適當的CTE匹配,熱膨脹就不會限制可接合至光學元件之LED晶粒之尺寸,從而可將光學元件102接合至大LED晶粒104,例如,大至16 mm2
或更大。
圖2說明將多個LED晶粒204a、204b及204c(有時統稱為LED晶粒204)安裝於一子基板206上之一具體實施例。圖2示意性顯示LED晶粒204,但未顯示特定半導體層。然而,應明白,LED晶粒204可類似於上述LED晶粒104。
如上所述,將LED晶粒204中的每一個安裝於子基板206。一旦將LED晶粒204安裝於子基板206,就以一方式(例如,上述方式)將個別光學元件202a、202b及202c分別接合至LED晶粒204a、204b及204c。
若需要,LED晶粒204可為相同類型的LED且可產生相同波長的光。在另一實施方案中,該等LED晶粒204中的一個或多個可產生不同波長的光,其組合時,可用以產生具有所需相關色溫(CCT)之光,例如,白光。另一光學元件(圖2未顯示)可用以覆蓋光學元件202a、202b及202c並輔助混合該光。
圖3說明一LED裝置300之一具體實施例,該LED裝置300包括安裝於一子基板306上的多個LED晶粒304a、304b及304c(有時統稱為LED晶粒304)與接合至該LED晶粒304之一單一光學元件302。該等LED晶粒304可類似於上述LED晶粒104。
如圖3所示,將一單一光學元件302與多個LED晶粒304一起使用係較佳的,因為可將LED晶粒304緊靠在一起而安裝於子基板306上。光學組件之足跡通常比其所接合的LED晶粒之足跡大,因此,將LED晶粒與單獨的光學元件一起放置時,會受光學元件之尺寸的約束。
將LED晶粒304安裝於子基板之後,(例如)由於塊320之高度及晶粒之厚度中的差異,可能導致LED晶粒304之頂部表面中存在微小的高度變化。將單一光學元件302熱接合至LED晶粒304時,LED晶粒304之任何高度差皆可藉由塊320之柔性而得以調和。
將光學元件302熱接合至LED晶粒304之程序期間,LED晶粒304可能會因子基板306之加熱與冷卻而橫向偏移。使用某些塊320(例如,Au)時,塊320之柔性可能不能完全調和LED晶粒304之橫向偏移。因此,光學元件302之熱膨脹係數(CTE3 0 2
)應與子基板306之熱膨脹係數(CTE3 0 6
)近似匹配。CTE3 0 2
與CTE3 0 6
近似匹配時,子基板306之膨脹與收縮所引起的LED晶粒304之任何運動將皆與光學元件302之膨脹與收縮所引起的運動近似匹配。另一方面,在熱接合程序之加熱與冷卻期間,CTE3 0 2
與CTE3 0 6
之間的失配可導致LED晶粒304與光學元件302分離或對LED裝置300帶來其他損壞。
藉由使用足夠小的LED晶粒304,可使熱接合程序期間,LED晶粒304自身的熱膨脹最小化。然而,使用大LED晶粒304時,熱接合程序期間之LED晶粒304之熱膨脹量可能較大,因此LED晶粒304之CTE亦應與子基板306之CTE近似匹配。
LED晶粒304可為(例如)InGaN、AlInGaP或InGaN與AlInGaP裝置之組合。在一實施方案中,可由AlN製造子基板306,而光學元件302由(例如)Ohara公司的SLAM60或從Schott玻璃技術股份有限公司獲得的NZK7製造。在另一實施方案中,可使用氧化鋁子基板306,以及由藍寶石、Ohara玻璃SLAH51或Schott玻璃NLAF21所製造之一光學元件302。在某些實施方案中,可在LED晶粒304與子基板306之間使用一體填充物305。體填充物305可為,例如,聚矽氧或玻璃。體填充物305可具有良好的導熱率且可與子基板306及晶粒304之CTE近似匹配。若需要,可替代地或除體填充物305之外,施加一保護側塗層。
在一實施方案中,所有LED晶粒304可為相同類型且產生不同或近似相同波長之光。或者,可藉由適當地選擇LED晶粒304及/或波長轉換材料來產生不同波長的光,例如,藍、綠及紅光。當LED晶粒304為相同類型時,LED晶粒304之CTE將近似相同。希望LED晶粒304之CTE與光學元件302及子基板306之熱膨脹係數非常匹配,以使熱接合程序期間分離或損壞LED晶粒304之危險性最小化。
在另一實施方案中,LED晶粒304可為不同類型且產生不同波長的光。使用不同類型的LED晶粒時,該等晶粒之CTE可變化,導致難以使所有LED晶粒304之CTE與光學元件302及子基板306之CTE匹配。然而,藉由明智地選擇光學元件302與子基板306,使其CTE與LED晶粒304之CTE盡可能地接近,可將熱接合程序期間,與LED晶粒304分離或對裝置300帶來的其他損壞有關的問題最小化。此外,使用相對較小(例如,面積小於大約1 mm2
)的LED晶粒304時,與將單一光學元件302接合至多個晶粒304有關的問題亦可得以減少。在熱處理或操作期間使用體填充物305亦可防止損壞裝置。
如圖3所示,在一實施方案中,光學元件302亦可覆蓋有一波長轉換材料310,例如磷塗層。在一具體實施例中,該波長轉換材料310為YAG。圖4係製造該裝置之一實施方案之流程圖。如圖4所示,將LED晶粒304安裝於子基板306(步驟402)並將光學元件302接合至LED晶粒304(步驟404)。將光學元件302接合至LED晶粒304之後,在光學元件302上方沈積一層波長轉換材料310(步驟406)。可接著測試該裝置,例如,藉由橫跨LED晶粒304之作用區域施加一電壓並偵測該裝置所產生光之波長(步驟408)。若該裝置並未產生所需波長(步驟410),則改變波長轉換材料之厚度(步驟411),例如,藉由在光學元件302上方沈積額外波長轉換材料310或藉由移除(藉由蝕刻或溶解)波長轉換材料中的某些,且再次測試該裝置(步驟408)。一旦產生所需波長的光,就停止該程序(步驟412)。
因此,可回應於LED晶粒304所產生之光來控制波長轉換材料310塗層之厚度,從而獲得易重製相關色溫。此外,因為回應於LED晶粒304所產生之特定波長來沈積波長轉換材料310,故LED晶粒304所產生光之波長之變化可加以調和。因此,將把所產生光之波長不屬於有用波長範圍內之少數LED晶粒除去。
應明白,採用波長轉換材料塗佈光學元件之程序亦可應用於圖1B與2所示具體實施例。
在另一實施方案中,波長轉換材料塗層可放置於LED晶粒與光學元件之間,例如,接合層322之內、上方或下方。圖5以範例方式說明安裝於一子基板504且經由接合層508接合至一光學元件506之一LED晶粒502,其中一層波長轉換材料510係置放於該接合層508與該光學元件506之間。可在將光學元件506接合至LED晶粒502之前或期間,藉由接合層509而將波長轉換材料510接合至光學元件506之底部表面。波長轉換材料510可為,例如,獨立形成且接著接合至LED晶粒502與光學元件506之一浸漬磷的玻璃或波長轉換陶瓷。在某些具體實施例中,可將波長轉換材料510直接接合至LED晶粒502與光學元件506中的一者或兩者。在一具體實施例中,可將光學元件506、LED晶粒502及波長轉換材料510同時接合在一起。在另一具體實施例中,可將波長轉換材料510首先接合至光學元件506並隨後接合至LED晶粒502,例如,其中接合層509之接合溫度係高於接合層508之接合溫度。若要瞭解適合的波長轉換材料(例如,浸漬磷的玻璃)之更多細節,可參閱Paul S.Martin等人於2004年6月9日所申請的標題為"具有預製造波長轉換元件之半導體發光裝置"之美國序列號碼10/863,980,其具有與本申請案相同的受讓人且係以引用方式併入本文中。
圖6說明另一具體實施例,其係類似於圖5所示具體實施例,不同之處在於,在接合光學元件506之前或期間,將一波長轉換材料520直接接合至LED晶粒502(且可視需要接合在LED晶粒502之邊緣上方)。因此,如圖6所示,該波長轉換材料520係置放於LED晶粒502與接合層509之間。若需要,可如上所述、在圖5與6中的光學元件506上方沈積額外一層波長轉換材料。
在另一實施方案中,該波長轉換材料塗層可遠離該(等)LED晶粒而位於其上方,例如,位於一玻璃、塑膠、環氧樹脂或聚矽氧包絡上,其中在該包絡與該(等)LED晶粒之間具有一空間隔。若需要,可採用一材料(例如,聚矽氧或環氧樹脂)來填充該空間隔。
圖7說明安裝於一板604上之一LED 602陣列600。板604包括電路606,其係用以提供至LED 602之電接觸。LED 602可為以(例如)上述方式所製造之磷轉換裝置。該等LED 602之每一個可產生具有不同CCT之白光。藉由將陣列600中、具有不同CCT之白光混合,可產生具有所需CCT之光。若需要,該等LED 602可覆蓋有一透明元件608,其係(例如)玻璃、塑膠、環氧樹脂或聚矽氧。該透明元件608可填充有(例如)環氧樹脂或聚矽氧,其有助於光之擷取與混合且保護LED 602。應明白,陣列600可包括任何數目的LED 602,若需要,該等LED中的一個或多個可產生非白光。此外,若需要,可將複數個LED 602接合至一單一光學元件603,或該等LED 602中的一個或多個可不包括光學元件603。
如圖7所示,可藉由(例如)電連接至板604上之電路606之控制器610,獨立地控制LED 602中的個別LED或LED群組。藉由獨立控制LED 602或LED 602群組,可獲得具有恆定亮度之一高演色性,例如,高於85。此外,可在一大CCT範圍內(例如,在3000K與6000K之間)調整陣列600所產生之白點。舉例而言,可將產生白光的許多磷轉換(PC)藍LED與具有不同顏色(例如,藍色、青色、玻珀色及紅色)之LED組合使用以產生具有所需CCT之光。如圖8之曲線圖所示,磷轉換藍LED產生具有位於綠色區域中之一寬頻譜702之光且具有位於藍區域中之一峰值。可調整磷之厚度以在頻譜之綠色與藍色部分產生近似相等的峰值。圖9顯示圖8所示頻譜之CIE色度圖,其說明黑線754上方之x與y顏色座標752。當然,若需要,亦可使用所產生頻譜之峰值位於其他區域中之PC LED。或者,若需要,亦可同時使用產生不同頻譜(即,具有不同CCT之白光)之PC LED。
圖7之陣列600中之LED 602中的大多數可為產生圖8所示頻譜之PC LED。圖7所示剩餘LED 602可為彩色LED,例如,產生藍色、青色、琥珀色及紅色之光之LED。可藉由控制器610來調整彩色LED之亮度。供電充足的PC LED與彩色LED之組合可產生近似連續的頻譜,如圖10所示。圖10顯示PC LED之頻譜702以及藍色、青色、琥珀色及紅色LED之頻譜704、706、708及710之曲線圖,該等頻譜組合形成頻譜720。如圖11所示CIE色度圖之部分所示,藉由改變彩色LED之亮度,可獲得覆蓋黑線764之部分之一區域。舉例而言,包括29個PC LED與12個彩色LED之一具體實施例能產生800流明的亮度,其中演色性係在85與95之間,而CCT係在3200K與5800K之間。圖12係說明由29個PC LED與12個彩色LED之一LED陣列之可變CCT值之CIE色度圖之一部分。當然,亦可使用任何數目的PC LED與彩色LED。
雖然基於說明之目的,結合一些特定的具體實施例說明本發明,但本發明並非限於該等特定的具體實施例。不需背離本發明之範疇即可對本發明進行各種調整與修改。因此,不應將所附申請專利範圍之精神與範疇限制於以上說明。
102...光學元件
102a...表面
104...發光二極體晶粒
106...子基板
108...第一半導體層
110...第二半導體層
112...作用區域
114...接點
116...接點
118...頂置板
120...接觸元件
122、122’...接合層
124...波長轉換材料
202a、202b、202c...光學元件
204a、204b、204c、204...發光裝置晶粒
206...子基板
300...發光裝置
302...光學元件
304a、304b、304c、304...發光裝置晶粒
305...體填充物
306...子基板
310...波長轉換材料
320...塊
322...接合層
502...發光裝置晶粒
504...子基板
506...光學元件
508...接合層
509...接合層
510...波長轉換材料
520...波長轉換材料
600...發光裝置陣列
602...發光裝置
603...光學元件
604...板
606...電路
608...透明元件
610...控制器
702、704、706、708、710、720...頻譜
752...顏色座標
754、764...線
圖1A說明安裝於一子基板之一LED晶粒與將接合至該LED晶粒之一光學元件之側視圖。
圖1B說明已接合至該LED晶粒之光學元件。
圖2說明一具體實施例,其中將多個LED晶粒安裝於一子基板且將一獨立的光學元件接合至每一LED晶粒。
圖3說明一具體實施例,其中將多個LED晶粒安裝於一子基板且將一單一光學元件接合至該等LED晶粒。
圖4係採用波長轉換材料覆蓋該光學元件來產生此LED裝置之一實施方案之流程圖。
圖5說明一具體實施例,其中一層波長轉換材料係置放於該接合層與該光學元件之間。
圖6說明一具體實施例,其中一層波長轉換材料係置放於該LED晶粒上。
圖7說明安裝於一板上之一LED陣列。
圖8係一磷轉換藍LED所產生之寬頻譜之曲線圖。
圖9係圖8所示頻譜之CIE色度圖。
圖10係磷轉換LED與彩色LED所產生頻譜之曲線圖,該等LED可加以組合以產生近似連續的頻譜。
圖11係顯示CCT變化之一CIE色度圖之一部分,可藉由變化彩色LED之亮度來產生該CCT變化。
圖12係說明由29個磷轉換LED與12個彩色LED組成之一LED陣列之可變CCT值之另一CIE色度圖之一部分。
102...光學元件
102a...表面
104...發光二極體晶粒
106...子基板
108...第一半導體層
110...第二半導體層
112...作用區域
114...接點
116...接點
118...頂置板
120...接觸元件
122...接合層
124...波長轉換材料
Claims (32)
- 一種製造一發光裝置之方法,其包含:透過接觸元件將至少一發光裝置晶粒安裝於一子基板,該子基板具有一第一熱膨脹係數;及將該發光裝置晶粒安裝於該子基板之後,將一光學元件接合至該至少一發光裝置晶粒,其中將該光學元件接合至該至少一發光裝置晶粒之該接合係以置放於該光學元件與該至少一發光裝置晶粒之間之一接合層實施,該光學元件具有一第二熱膨脹係數,該第一熱膨脹係數與該第二熱膨脹係數足以匹配,俾使該光學元件不會因為接合期間熱膨脹及收縮的不同而造成與該發光裝置晶粒分離。
- 如請求項1之方法,其中該接合層包含一無機材料。
- 如請求項1之方法,其中接合包含:將該光學元件、該接合層、該發光裝置晶粒及該子基板之溫度升至低於該等接觸元件之熔化溫度之一溫度;施加一壓力以將該光學元件與該發光裝置晶粒壓合在一起,從而透過該接合層將該光學元件接合至該發光裝置晶粒。
- 如請求項3之方法,其中將該溫度升至高於安裝該發光裝置晶粒與該子基板所使用溫度之一溫度。
- 如請求項1之方法,其中該等接觸元件係位於該發光裝置晶粒之底部表面與該子基板之頂部表面中的至少一個上,該等接觸元件提供該發光裝置晶粒與該子基板之間 之電接觸。
- 如請求項5之方法,其中該等接觸元件係採用一材料所形成之塊與墊中的至少一者,該材料包括Au與AuSn中的至少一者。
- 如請求項4之方法,其中將該至少一發光裝置晶粒安裝於該子基板所使用的該溫度係低於大約250℃。
- 如請求項1之方法,其中將該光學元件接合至該至少一發光裝置晶粒所使用的一溫度係低於大約400℃。
- 如請求項1之方法,其中該光學元件與該發光裝置晶粒之間之該接合層包含一碲氧化物、鎢氧化物、鉛氧化物及鋅氧化物中的至少一者。
- 如請求項1之方法,其中該光學元件與該發光裝置晶粒之間之該接合層包含一鈉氧化物、鉀氧化物、鋰氧化物及鋅氟化物中的至少一者。
- 如請求項1之方法,其中將複數個發光裝置晶粒安裝於該子基板。
- 如請求項11之方法,其中一光學元件係接合至該複數個發光裝置晶粒。
- 如請求項11之方法,其中一獨立的光學元件係接合至該複數個發光裝置晶粒中的每一個。
- 如請求項1之方法,其進一步包含在該光學元件上方沈積一波長轉換材料塗層。
- 如請求項14之方法,其中在該光學元件上方沈積一波長轉換材料塗層包含: 在該光學元件上方沈積一層該波長轉換材料;於將一正向偏壓電流施加於該發光裝置晶粒時,決定該裝置所產生光之波長;重複地增加該層波長轉換材料之厚度並決定該裝置所產生光之該等波長,直到產生所需光波長。
- 如請求項1之方法,其進一步包含將該光學元件接合至該一發光裝置晶粒之前,在該至少一發光裝置晶粒與該光學元件之間放置一層波長轉換材料。
- 如請求項16之方法,其中將該層波長轉換材料接合於該光學元件之該底部表面與該發光裝置晶粒之該頂部表面中的至少一個上。
- 如請求項1之方法,其中該光學元件包括波長轉換材料。
- 如請求項1之方法,其中該發光裝置晶粒包含一半導體層堆疊,其中的至少一半導體層係一發光的作用區域,及電耦合以橫跨該作用區域施加一電壓之一第一接點與一第二接點;該第一接點與該第二接點係置放於該堆疊之一相同側上。
- 一種製造一發光裝置之方法,其包含:提供具有一第一熱膨脹係數之一子基板;提供複數個發光裝置晶粒;將該複數個發光裝置晶粒安裝於該子基板;提供一光學元件,其具有與該第一熱膨脹係數近似相同之一第二熱膨脹係數;及將該複數個發光裝置晶粒安裝於該子基板之後,將該 光學元件接合至該等發光裝置晶粒。
- 如請求項20之方法,其中使用熱壓縮與熱超音波接合中的一個來執行該複數個發光裝置晶粒安裝於該子基板。
- 如請求項21之方法,其中將該光學元件接合至該複數個發光裝置晶粒包含將該光學元件、該等發光裝置晶粒及該子基板之溫度升至大於安裝該複數個發光裝置晶粒與該子基板所使用溫度之一溫度,及施加一壓力以將該光學元件與該等發光裝置晶粒壓合在一起。
- 如請求項22之方法,其中該等發光裝置晶粒中的至少一個與該子基板包括接觸元件,該等接觸元件提供該等發光裝置晶粒與該子基板之間之電接觸,且其中將該光學元件接合至該複數個發光裝置晶粒之該溫度係低於該等接觸元件之熔化溫度。
- 如請求項23之方法,其中該等接觸元件係採用一材料所形成之塊與墊中的至少一者,該材料包括Au與AuSn中的至少一者。
- 如請求項21之方法,其中該複數個發光裝置晶粒之該等熱膨脹係數係與該第一熱膨脹係數近似相同。
- 如請求項20之方法,其進一步包含在該光學元件上方沈積一波長轉換材料塗層。
- 如請求項26之方法,其中在該光學元件上方沈積一波長轉換材料塗層包含:在該光學元件上方沈積一層該波長轉換材料;於將一正向偏壓電流施加於該發光裝置晶粒時,決定 該裝置所產生光之波長;重複地增加該層波長轉換材料之厚度並決定該裝置所產生光之該等波長,直到產生所需光波長。
- 如請求項20之方法,其中該等發光裝置晶粒中的每一個包含一半導體層堆疊,其中的至少一半導體層係一發光的作用區域,及電耦合以橫跨該作用區域施加一電壓之一第一接點與一第二接點;該第一接點與該第二接點係置放於該堆疊之一相同側上。
- 一種製造一發光裝置之方法,其包含:提供一半導體發光裝置,其包括半導體層之一堆疊,該半導體層包含一作用區域;提供一光學元件,該光學元件具有一熱膨脹係數;將該半導體發光裝置接合至該光學元件,該接合係以置放於該光學元件與該半導體發光裝置之間之一接合層實施,其中該接合層包含選自一碲氧化物、一鉛氧化物、一鎢氧化物及一鋅氧化物之群組之一材料;及在將該半導體發光裝置接合至該光學元件前將該半導體發光裝置接合至一子基板,該子基板具有一熱膨脹係數,其與該光學元件之熱膨脹係數足以匹配,俾使該光學元件不會因為接合期間熱膨脹及收縮的不同而造成與該發光裝置晶粒分離。
- 如請求項29之方法,其中將該發光裝置接合至該光學元件所使用之該溫度係在大約200℃與400℃之間。
- 如請求項29之方法,其中該等光學元件與發光裝置處於 接合溫度下之時間係在大約30秒與30分鐘之間。
- 如請求項29之方法,其中將該發光裝置接合至該光學元件所使用之壓力係在大約700與3000 psi之間。
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US20120043564A1 (en) | 2012-02-23 |
JP2017199932A (ja) | 2017-11-02 |
US8748912B2 (en) | 2014-06-10 |
US20130293145A1 (en) | 2013-11-07 |
JP2012238871A (ja) | 2012-12-06 |
EP1657757A3 (en) | 2010-03-24 |
US20100109568A1 (en) | 2010-05-06 |
US20060105478A1 (en) | 2006-05-18 |
JP2018207136A (ja) | 2018-12-27 |
JP2014195120A (ja) | 2014-10-09 |
JP2016029736A (ja) | 2016-03-03 |
EP1657757A2 (en) | 2006-05-17 |
US20080186702A1 (en) | 2008-08-07 |
EP1657757B1 (en) | 2017-05-10 |
US8846423B2 (en) | 2014-09-30 |
US7419839B2 (en) | 2008-09-02 |
US20060105482A1 (en) | 2006-05-18 |
US8067254B2 (en) | 2011-11-29 |
JP2006352061A (ja) | 2006-12-28 |
TW200620718A (en) | 2006-06-16 |
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