FR1416993A - Perfectionnements aux sources de lumière à semi-couducteurs - Google Patents

Perfectionnements aux sources de lumière à semi-couducteurs

Info

Publication number
FR1416993A
FR1416993A FR998158A FR998158A FR1416993A FR 1416993 A FR1416993 A FR 1416993A FR 998158 A FR998158 A FR 998158A FR 998158 A FR998158 A FR 998158A FR 1416993 A FR1416993 A FR 1416993A
Authority
FR
France
Prior art keywords
semi
light sources
bending light
bending
sources
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR998158A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Application granted granted Critical
Publication of FR1416993A publication Critical patent/FR1416993A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
FR998158A 1963-12-12 1964-12-10 Perfectionnements aux sources de lumière à semi-couducteurs Expired FR1416993A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US33017263A 1963-12-12 1963-12-12

Publications (1)

Publication Number Publication Date
FR1416993A true FR1416993A (fr) 1965-11-05

Family

ID=26211666

Family Applications (1)

Application Number Title Priority Date Filing Date
FR998158A Expired FR1416993A (fr) 1963-12-12 1964-12-10 Perfectionnements aux sources de lumière à semi-couducteurs

Country Status (1)

Country Link
FR (1) FR1416993A (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1258515B (de) * 1966-01-13 1968-01-11 Siemens Ag AB-Lumineszenzdiode mit Traegerkristall í¬ insbesondere auf GaAs-Basisí¬mit hoher Lichtausbeute
DE1270687B (de) * 1965-12-13 1968-06-20 Siemens Ag Verfahren zum Herstellen einer Lumineszenzdiode
EP1146572A2 (fr) * 2000-03-14 2001-10-17 Toyoda Gosei Co., Ltd. Dispositif de source lumineuse
WO2002056390A1 (fr) * 2001-01-15 2002-07-18 Osram Opto Semiconductors Gmbh Diode luminescente et procede permettant de la produire
EP1657757A3 (fr) * 2004-11-12 2010-03-24 Philips Lumileds Lighting Company LLC Elément émetteur de lumière à semi-conducteur avec éléments optique fixé et sa méthode de fabrication

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1270687B (de) * 1965-12-13 1968-06-20 Siemens Ag Verfahren zum Herstellen einer Lumineszenzdiode
DE1258515B (de) * 1966-01-13 1968-01-11 Siemens Ag AB-Lumineszenzdiode mit Traegerkristall í¬ insbesondere auf GaAs-Basisí¬mit hoher Lichtausbeute
EP1146572A2 (fr) * 2000-03-14 2001-10-17 Toyoda Gosei Co., Ltd. Dispositif de source lumineuse
EP1146572A3 (fr) * 2000-03-14 2005-03-23 Toyoda Gosei Co., Ltd. Dispositif de source lumineuse
US6953265B2 (en) 2000-03-14 2005-10-11 Toyoda Gosei Co., Ltd. Light source device
WO2002056390A1 (fr) * 2001-01-15 2002-07-18 Osram Opto Semiconductors Gmbh Diode luminescente et procede permettant de la produire
US7015514B2 (en) 2001-01-15 2006-03-21 Osram Opto Semiconductors Gmbh Light-emitting diode and method for the production thereof
EP1657757A3 (fr) * 2004-11-12 2010-03-24 Philips Lumileds Lighting Company LLC Elément émetteur de lumière à semi-conducteur avec éléments optique fixé et sa méthode de fabrication
EP1657757B1 (fr) 2004-11-12 2017-05-10 Philips Lumileds Lighting Company LLC Procédé de fabrication d'un élément émetteur de lumière à semi-conducteur avec élément optique fixé

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