TWI388639B - 用於低k介電質之障蔽物漿液 - Google Patents
用於低k介電質之障蔽物漿液 Download PDFInfo
- Publication number
- TWI388639B TWI388639B TW098130809A TW98130809A TWI388639B TW I388639 B TWI388639 B TW I388639B TW 098130809 A TW098130809 A TW 098130809A TW 98130809 A TW98130809 A TW 98130809A TW I388639 B TWI388639 B TW I388639B
- Authority
- TW
- Taiwan
- Prior art keywords
- polishing composition
- ppm
- salt
- acid
- polishing
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H10P52/00—
-
- H10P52/403—
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US9860008P | 2008-09-19 | 2008-09-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201016807A TW201016807A (en) | 2010-05-01 |
| TWI388639B true TWI388639B (zh) | 2013-03-11 |
Family
ID=42038105
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098130809A TWI388639B (zh) | 2008-09-19 | 2009-09-11 | 用於低k介電質之障蔽物漿液 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US8252687B2 (enExample) |
| EP (1) | EP2356192B1 (enExample) |
| JP (1) | JP5619009B2 (enExample) |
| KR (1) | KR101247890B1 (enExample) |
| CN (1) | CN102159662B (enExample) |
| IL (1) | IL211576A (enExample) |
| MY (1) | MY150487A (enExample) |
| TW (1) | TWI388639B (enExample) |
| WO (1) | WO2010033156A2 (enExample) |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101802116B (zh) * | 2007-09-21 | 2014-03-12 | 卡伯特微电子公司 | 利用经氨基硅烷处理的研磨剂颗粒的抛光组合物和方法 |
| EP2389417B1 (en) * | 2009-01-20 | 2017-03-15 | Cabot Corporation | Compositons comprising silane modified metal oxides |
| JP6272842B2 (ja) * | 2012-06-11 | 2018-01-31 | キャボット マイクロエレクトロニクス コーポレイション | モリブデン研磨のための組成物および方法 |
| US10358579B2 (en) * | 2013-12-03 | 2019-07-23 | Cabot Microelectronics Corporation | CMP compositions and methods for polishing nickel phosphorous surfaces |
| US9850402B2 (en) * | 2013-12-09 | 2017-12-26 | Cabot Microelectronics Corporation | CMP compositions and methods for selective removal of silicon nitride |
| US20150233004A1 (en) * | 2014-02-18 | 2015-08-20 | Nano And Advanced Materials Institute Limited | Method of selective recovery of valuable metals from mixed metal oxides |
| US9303188B2 (en) | 2014-03-11 | 2016-04-05 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
| US9238754B2 (en) | 2014-03-11 | 2016-01-19 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
| US9303189B2 (en) | 2014-03-11 | 2016-04-05 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
| US9309442B2 (en) | 2014-03-21 | 2016-04-12 | Cabot Microelectronics Corporation | Composition for tungsten buffing |
| US9303190B2 (en) | 2014-03-24 | 2016-04-05 | Cabot Microelectronics Corporation | Mixed abrasive tungsten CMP composition |
| US9127187B1 (en) | 2014-03-24 | 2015-09-08 | Cabot Microelectronics Corporation | Mixed abrasive tungsten CMP composition |
| JP2015189829A (ja) * | 2014-03-27 | 2015-11-02 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| KR102464630B1 (ko) * | 2014-06-25 | 2022-11-08 | 씨엠씨 머티리얼즈, 인코포레이티드 | 콜로이드성 실리카 화학적-기계적 연마 조성물 |
| CN106661431B (zh) * | 2014-06-25 | 2019-06-28 | 嘉柏微电子材料股份公司 | 铜阻挡物的化学机械抛光组合物 |
| WO2015200679A1 (en) | 2014-06-25 | 2015-12-30 | Cabot Microelectronics Corporation | Tungsten chemical-mechanical polishing composition |
| US9868902B2 (en) * | 2014-07-17 | 2018-01-16 | Soulbrain Co., Ltd. | Composition for etching |
| KR102418496B1 (ko) * | 2014-12-24 | 2022-07-08 | 솔브레인 주식회사 | 화학적 기계적 연마 슬러리 조성물 및 이를 이용하는 반도체 소자의 제조방법 |
| CN105802511A (zh) * | 2014-12-29 | 2016-07-27 | 安集微电子(上海)有限公司 | 一种化学机械抛光液及其应用 |
| US9631122B1 (en) | 2015-10-28 | 2017-04-25 | Cabot Microelectronics Corporation | Tungsten-processing slurry with cationic surfactant |
| US9771496B2 (en) | 2015-10-28 | 2017-09-26 | Cabot Microelectronics Corporation | Tungsten-processing slurry with cationic surfactant and cyclodextrin |
| US9534148B1 (en) | 2015-12-21 | 2017-01-03 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of polishing semiconductor substrate |
| KR102731867B1 (ko) * | 2015-12-29 | 2024-11-18 | 씨엠씨 머티리얼즈 엘엘씨 | 알킬아민 및 사이클로덱스트린을 포함하는 화학적-기계적 폴리싱(cmp) 처리용 조성물 |
| EP3400266B1 (en) * | 2016-01-06 | 2022-08-24 | CMC Materials, Inc. | Method of polishing a low-k substrate |
| JP6955014B2 (ja) * | 2016-09-28 | 2021-10-27 | ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド | 第四級ホスホニウム化合物を含有する方法及び組成物を使用したタングステンの化学機械研磨 |
| US10586914B2 (en) * | 2016-10-14 | 2020-03-10 | Applied Materials, Inc. | Method of forming ultra-smooth bottom electrode surface for depositing magnetic tunnel junctions |
| WO2018179061A1 (ja) * | 2017-03-27 | 2018-10-04 | 日立化成株式会社 | 研磨液、研磨液セット及び研磨方法 |
| US11043151B2 (en) * | 2017-10-03 | 2021-06-22 | Cmc Materials, Inc. | Surface treated abrasive particles for tungsten buff applications |
| KR20200100660A (ko) | 2017-12-27 | 2020-08-26 | 니타 듀폰 가부시키가이샤 | 연마용 슬러리 |
| KR102546609B1 (ko) * | 2018-07-13 | 2023-06-23 | 오씨아이 주식회사 | 실리콘 기판 식각 용액 |
| JP7028120B2 (ja) * | 2018-09-20 | 2022-03-02 | Jsr株式会社 | 化学機械研磨用水系分散体及びその製造方法、並びに化学機械研磨方法 |
| TWI755060B (zh) * | 2019-11-15 | 2022-02-11 | 日商Jsr股份有限公司 | 化學機械研磨用組成物以及化學機械研磨方法 |
| KR20220000284A (ko) * | 2020-06-25 | 2022-01-03 | 삼성전자주식회사 | 화학적 기계적 연마용 슬러리 조성물 |
| CN114686112A (zh) * | 2020-12-30 | 2022-07-01 | 安集微电子科技(上海)股份有限公司 | 一种化学机械抛光液及其使用方法 |
| JP2022131199A (ja) | 2021-02-26 | 2022-09-07 | 株式会社フジミインコーポレーテッド | 研磨用組成物及び研磨方法 |
| US11274230B1 (en) | 2021-04-27 | 2022-03-15 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing composition and method of polishing a substrate having enhanced defect inhibition |
| US12291655B2 (en) * | 2021-04-27 | 2025-05-06 | DuPont Electronic Materials Holding, Inc. | Polishing composition and method of polishing a substrate having enhanced defect reduction |
| KR20240051550A (ko) | 2022-10-13 | 2024-04-22 | 솔브레인 주식회사 | 화학적 기계적 연마용 슬러리 조성물 및 그 제조방법 |
| KR20240051551A (ko) | 2022-10-13 | 2024-04-22 | 솔브레인 주식회사 | 화학적 기계적 연마용 슬러리 조성물 및 그 제조방법 |
| KR20240051552A (ko) | 2022-10-13 | 2024-04-22 | 솔브레인 주식회사 | 화학적 기계적 연마용 슬러리 조성물 및 그 제조방법 |
| KR20240051553A (ko) | 2022-10-13 | 2024-04-22 | 솔브레인 주식회사 | 화학적 기계적 연마용 슬러리 조성물 및 그 제조방법 |
Family Cites Families (35)
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|---|---|---|---|---|
| US5230833A (en) | 1989-06-09 | 1993-07-27 | Nalco Chemical Company | Low sodium, low metals silica polishing slurries |
| US5196353A (en) | 1992-01-03 | 1993-03-23 | Micron Technology, Inc. | Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer |
| US6614529B1 (en) | 1992-12-28 | 2003-09-02 | Applied Materials, Inc. | In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization |
| US5658183A (en) | 1993-08-25 | 1997-08-19 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical monitoring |
| US5433651A (en) | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
| JP3270282B2 (ja) | 1994-02-21 | 2002-04-02 | 株式会社東芝 | 半導体製造装置及び半導体装置の製造方法 |
| JP3313505B2 (ja) | 1994-04-14 | 2002-08-12 | 株式会社日立製作所 | 研磨加工法 |
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| JP2007053214A (ja) * | 2005-08-17 | 2007-03-01 | Sumitomo Bakelite Co Ltd | 研磨用組成物 |
| JP2007095946A (ja) * | 2005-09-28 | 2007-04-12 | Fujifilm Corp | 金属用研磨液及び研磨方法 |
| JP2007214155A (ja) | 2006-02-07 | 2007-08-23 | Fujifilm Corp | バリア用研磨液及び化学的機械的研磨方法 |
| JP2007273910A (ja) * | 2006-03-31 | 2007-10-18 | Fujifilm Corp | 研磨用組成液 |
| US20070254485A1 (en) | 2006-04-28 | 2007-11-01 | Daxin Mao | Abrasive composition for electrochemical mechanical polishing |
| US20080020680A1 (en) | 2006-07-24 | 2008-01-24 | Cabot Microelectronics Corporation | Rate-enhanced CMP compositions for dielectric films |
| US9129907B2 (en) * | 2006-09-08 | 2015-09-08 | Cabot Microelectronics Corporation | Onium-containing CMP compositions and methods of use thereof |
| JP5094112B2 (ja) * | 2006-12-28 | 2012-12-12 | 富士フイルム株式会社 | 研磨液 |
| JP5094139B2 (ja) * | 2007-01-23 | 2012-12-12 | 富士フイルム株式会社 | 研磨液 |
| JP5202258B2 (ja) * | 2008-03-25 | 2013-06-05 | 富士フイルム株式会社 | 金属研磨用組成物、及び化学的機械的研磨方法 |
-
2009
- 2009-09-03 EP EP09814870.3A patent/EP2356192B1/en active Active
- 2009-09-03 MY MYPI20111194 patent/MY150487A/en unknown
- 2009-09-03 US US12/584,343 patent/US8252687B2/en active Active
- 2009-09-03 CN CN200980136735.4A patent/CN102159662B/zh active Active
- 2009-09-03 KR KR1020117008786A patent/KR101247890B1/ko active Active
- 2009-09-03 WO PCT/US2009/004973 patent/WO2010033156A2/en not_active Ceased
- 2009-09-03 JP JP2011527799A patent/JP5619009B2/ja active Active
- 2009-09-11 TW TW098130809A patent/TWI388639B/zh active
-
2011
- 2011-03-06 IL IL211576A patent/IL211576A/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| MY150487A (en) | 2014-01-30 |
| CN102159662B (zh) | 2014-05-21 |
| CN102159662A (zh) | 2011-08-17 |
| EP2356192B1 (en) | 2020-01-15 |
| EP2356192A2 (en) | 2011-08-17 |
| WO2010033156A2 (en) | 2010-03-25 |
| JP2012503329A (ja) | 2012-02-02 |
| KR20110069107A (ko) | 2011-06-22 |
| WO2010033156A3 (en) | 2010-05-20 |
| EP2356192A4 (en) | 2013-05-22 |
| IL211576A0 (en) | 2011-05-31 |
| IL211576A (en) | 2014-05-28 |
| KR101247890B1 (ko) | 2013-03-26 |
| US20100075502A1 (en) | 2010-03-25 |
| TW201016807A (en) | 2010-05-01 |
| US8252687B2 (en) | 2012-08-28 |
| JP5619009B2 (ja) | 2014-11-05 |
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