KR101247890B1 - 저-ｋ 유전체를 위한 장벽 슬러리 - Google Patents

저-ｋ 유전체를 위한 장벽 슬러리 Download PDF

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Publication number
KR101247890B1
KR101247890B1 KR1020117008786A KR20117008786A KR101247890B1 KR 101247890 B1 KR101247890 B1 KR 101247890B1 KR 1020117008786 A KR1020117008786 A KR 1020117008786A KR 20117008786 A KR20117008786 A KR 20117008786A KR 101247890 B1 KR101247890 B1 KR 101247890B1
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South Korea
Prior art keywords
polishing composition
acid
delete delete
ppm
substrate
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Korean (ko)
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KR20110069107A (ko
Inventor
샤우티안 리
스티븐 그럼빈
제프리 디사드
판카즈 싱
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캐보트 마이크로일렉트로닉스 코포레이션
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020117008786A 2008-09-19 2009-09-03 저-ｋ 유전체를 위한 장벽 슬러리 Active KR101247890B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US9860008P 2008-09-19 2008-09-19
US61/098,600 2008-09-19
PCT/US2009/004973 WO2010033156A2 (en) 2008-09-19 2009-09-03 Barrier slurry for low-k dielectrics

Publications (2)

Publication Number Publication Date
KR20110069107A KR20110069107A (ko) 2011-06-22
KR101247890B1 true KR101247890B1 (ko) 2013-03-26

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Application Number Title Priority Date Filing Date
KR1020117008786A Active KR101247890B1 (ko) 2008-09-19 2009-09-03 저-ｋ 유전체를 위한 장벽 슬러리

Country Status (9)

Country Link
US (1) US8252687B2 (enExample)
EP (1) EP2356192B1 (enExample)
JP (1) JP5619009B2 (enExample)
KR (1) KR101247890B1 (enExample)
CN (1) CN102159662B (enExample)
IL (1) IL211576A (enExample)
MY (1) MY150487A (enExample)
TW (1) TWI388639B (enExample)
WO (1) WO2010033156A2 (enExample)

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US9850402B2 (en) * 2013-12-09 2017-12-26 Cabot Microelectronics Corporation CMP compositions and methods for selective removal of silicon nitride
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JP7028120B2 (ja) * 2018-09-20 2022-03-02 Jsr株式会社 化学機械研磨用水系分散体及びその製造方法、並びに化学機械研磨方法
TWI755060B (zh) * 2019-11-15 2022-02-11 日商Ｊｓｒ股份有限公司 化學機械研磨用組成物以及化學機械研磨方法
KR20220000284A (ko) * 2020-06-25 2022-01-03 삼성전자주식회사 화학적 기계적 연마용 슬러리 조성물
CN114686112A (zh) * 2020-12-30 2022-07-01 安集微电子科技（上海）股份有限公司 一种化学机械抛光液及其使用方法
JP2022131199A (ja) 2021-02-26 2022-09-07 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
US12291655B2 (en) * 2021-04-27 2025-05-06 DuPont Electronic Materials Holding, Inc. Polishing composition and method of polishing a substrate having enhanced defect reduction
US11274230B1 (en) * 2021-04-27 2022-03-15 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing composition and method of polishing a substrate having enhanced defect inhibition
KR20240051553A (ko) 2022-10-13 2024-04-22 솔브레인 주식회사 화학적 기계적 연마용 슬러리 조성물 및 그 제조방법
KR20240051552A (ko) 2022-10-13 2024-04-22 솔브레인 주식회사 화학적 기계적 연마용 슬러리 조성물 및 그 제조방법
KR20240051550A (ko) 2022-10-13 2024-04-22 솔브레인 주식회사 화학적 기계적 연마용 슬러리 조성물 및 그 제조방법
KR20240051551A (ko) 2022-10-13 2024-04-22 솔브레인 주식회사 화학적 기계적 연마용 슬러리 조성물 및 그 제조방법

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Also Published As

Publication number Publication date
EP2356192B1 (en) 2020-01-15
CN102159662B (zh) 2014-05-21
MY150487A (en) 2014-01-30
JP5619009B2 (ja) 2014-11-05
JP2012503329A (ja) 2012-02-02
EP2356192A2 (en) 2011-08-17
TWI388639B (zh) 2013-03-11
US20100075502A1 (en) 2010-03-25
TW201016807A (en) 2010-05-01
EP2356192A4 (en) 2013-05-22
IL211576A0 (en) 2011-05-31
KR20110069107A (ko) 2011-06-22
CN102159662A (zh) 2011-08-17
IL211576A (en) 2014-05-28
US8252687B2 (en) 2012-08-28
WO2010033156A3 (en) 2010-05-20
WO2010033156A2 (en) 2010-03-25

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