MY150487A - Barrier slurry for low-k dielectrics. - Google Patents

Barrier slurry for low-k dielectrics.

Info

Publication number
MY150487A
MY150487A MYPI20111194A MY150487A MY 150487 A MY150487 A MY 150487A MY PI20111194 A MYPI20111194 A MY PI20111194A MY 150487 A MY150487 A MY 150487A
Authority
MY
Malaysia
Prior art keywords
polishing composition
polishing
dielectrics
low
salt
Prior art date
Application number
Other languages
English (en)
Inventor
Shoutian Li
Grumbine
Jeffrey Dysard
Singh
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of MY150487A publication Critical patent/MY150487A/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40Chemomechanical polishing [CMP]
    • H10P52/403Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
MYPI20111194 2008-09-19 2009-09-03 Barrier slurry for low-k dielectrics. MY150487A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US9860008P 2008-09-19 2008-09-19

Publications (1)

Publication Number Publication Date
MY150487A true MY150487A (en) 2014-01-30

Family

ID=42038105

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI20111194 MY150487A (en) 2008-09-19 2009-09-03 Barrier slurry for low-k dielectrics.

Country Status (9)

Country Link
US (1) US8252687B2 (enExample)
EP (1) EP2356192B1 (enExample)
JP (1) JP5619009B2 (enExample)
KR (1) KR101247890B1 (enExample)
CN (1) CN102159662B (enExample)
IL (1) IL211576A (enExample)
MY (1) MY150487A (enExample)
TW (1) TWI388639B (enExample)
WO (1) WO2010033156A2 (enExample)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG184772A1 (en) * 2007-09-21 2012-10-30 Cabot Microelectronics Corp Polishing composition and method utilizing abrasive particles treated with an aminosilane
JP5843613B2 (ja) 2009-01-20 2016-01-13 キャボット コーポレイションCabot Corporation シラン変性金属酸化物を含む組成物
CN104395425A (zh) * 2012-06-11 2015-03-04 嘉柏微电子材料股份公司 用于抛光钼的组合物和方法
US10358579B2 (en) * 2013-12-03 2019-07-23 Cabot Microelectronics Corporation CMP compositions and methods for polishing nickel phosphorous surfaces
US9850402B2 (en) * 2013-12-09 2017-12-26 Cabot Microelectronics Corporation CMP compositions and methods for selective removal of silicon nitride
US20150233004A1 (en) * 2014-02-18 2015-08-20 Nano And Advanced Materials Institute Limited Method of selective recovery of valuable metals from mixed metal oxides
US9303189B2 (en) 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
US9238754B2 (en) 2014-03-11 2016-01-19 Cabot Microelectronics Corporation Composition for tungsten CMP
US9303188B2 (en) 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
US9309442B2 (en) 2014-03-21 2016-04-12 Cabot Microelectronics Corporation Composition for tungsten buffing
US9127187B1 (en) 2014-03-24 2015-09-08 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
US9303190B2 (en) 2014-03-24 2016-04-05 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
JP2015189829A (ja) * 2014-03-27 2015-11-02 株式会社フジミインコーポレーテッド 研磨用組成物
TWI564380B (zh) * 2014-06-25 2017-01-01 卡博特微電子公司 銅障壁層化學機械拋光組合物
EP3161098B1 (en) 2014-06-25 2022-10-26 CMC Materials, Inc. Tungsten chemical-mechanical polishing composition
KR102775584B1 (ko) * 2014-06-25 2025-03-06 씨엠씨 머티리얼즈 엘엘씨 콜로이드성 실리카 화학적-기계적 연마 조성물
US9868902B2 (en) * 2014-07-17 2018-01-16 Soulbrain Co., Ltd. Composition for etching
KR102418496B1 (ko) * 2014-12-24 2022-07-08 솔브레인 주식회사 화학적 기계적 연마 슬러리 조성물 및 이를 이용하는 반도체 소자의 제조방법
CN105802511A (zh) * 2014-12-29 2016-07-27 安集微电子(上海)有限公司 一种化学机械抛光液及其应用
US9631122B1 (en) 2015-10-28 2017-04-25 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant
US9771496B2 (en) 2015-10-28 2017-09-26 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant and cyclodextrin
US9534148B1 (en) 2015-12-21 2017-01-03 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing semiconductor substrate
WO2017117404A1 (en) * 2015-12-29 2017-07-06 Cabot Microelectronics Corporation Cmp processing composition comprising alkylamine and cyclodextrin
US20170194160A1 (en) * 2016-01-06 2017-07-06 Cabot Microelectronics Corporation Method of polishing a low-k substrate
JP6955014B2 (ja) * 2016-09-28 2021-10-27 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド 第四級ホスホニウム化合物を含有する方法及び組成物を使用したタングステンの化学機械研磨
US10586914B2 (en) 2016-10-14 2020-03-10 Applied Materials, Inc. Method of forming ultra-smooth bottom electrode surface for depositing magnetic tunnel junctions
WO2018179061A1 (ja) * 2017-03-27 2018-10-04 日立化成株式会社 研磨液、研磨液セット及び研磨方法
US11043151B2 (en) * 2017-10-03 2021-06-22 Cmc Materials, Inc. Surface treated abrasive particles for tungsten buff applications
KR20200100660A (ko) 2017-12-27 2020-08-26 니타 듀폰 가부시키가이샤 연마용 슬러리
KR102546609B1 (ko) * 2018-07-13 2023-06-23 오씨아이 주식회사 실리콘 기판 식각 용액
JP7028120B2 (ja) * 2018-09-20 2022-03-02 Jsr株式会社 化学機械研磨用水系分散体及びその製造方法、並びに化学機械研磨方法
TWI755060B (zh) * 2019-11-15 2022-02-11 日商Jsr股份有限公司 化學機械研磨用組成物以及化學機械研磨方法
KR20220000284A (ko) * 2020-06-25 2022-01-03 삼성전자주식회사 화학적 기계적 연마용 슬러리 조성물
CN114686112A (zh) * 2020-12-30 2022-07-01 安集微电子科技(上海)股份有限公司 一种化学机械抛光液及其使用方法
JP2022131199A (ja) * 2021-02-26 2022-09-07 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
US11274230B1 (en) 2021-04-27 2022-03-15 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing composition and method of polishing a substrate having enhanced defect inhibition
US12291655B2 (en) * 2021-04-27 2025-05-06 DuPont Electronic Materials Holding, Inc. Polishing composition and method of polishing a substrate having enhanced defect reduction
KR20240051552A (ko) 2022-10-13 2024-04-22 솔브레인 주식회사 화학적 기계적 연마용 슬러리 조성물 및 그 제조방법
KR20240051553A (ko) 2022-10-13 2024-04-22 솔브레인 주식회사 화학적 기계적 연마용 슬러리 조성물 및 그 제조방법
KR20240051550A (ko) 2022-10-13 2024-04-22 솔브레인 주식회사 화학적 기계적 연마용 슬러리 조성물 및 그 제조방법
KR20240051551A (ko) 2022-10-13 2024-04-22 솔브레인 주식회사 화학적 기계적 연마용 슬러리 조성물 및 그 제조방법

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5230833A (en) 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
US5196353A (en) 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US6614529B1 (en) 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5658183A (en) 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP3313505B2 (ja) 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5964643A (en) 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5893796A (en) 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5838447A (en) 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5872633A (en) 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
US6592776B1 (en) * 1997-07-28 2003-07-15 Cabot Microelectronics Corporation Polishing composition for metal CMP
US6083840A (en) * 1998-11-25 2000-07-04 Arch Specialty Chemicals, Inc. Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys
FR2789998B1 (fr) * 1999-02-18 2005-10-07 Clariant France Sa Nouvelle composition de polissage mecano-chimique d'une couche en un materiau conducteur d'aluminium ou d'alliage d'aluminium
EP1739146A3 (en) * 1999-07-07 2007-01-24 Cabot Microelectronics Corporation CMP compositions containing silane modified abrasive particles
DE60025959T2 (de) * 1999-11-22 2006-10-19 Jsr Corp. Verbundpartikel und wässrige Dispersionen für chemisch-mechanisches Polieren
WO2001057150A1 (en) * 2000-02-02 2001-08-09 Rodel Holdings, Inc. Polishing composition
WO2001057919A1 (en) * 2000-02-04 2001-08-09 Showa Denko K. K. Polishing composite for use in lsi manufacture and method of manufacturing lsi
JP2001345295A (ja) * 2000-03-31 2001-12-14 Nikko Materials Co Ltd 化学機械研磨用スラリー
KR20060015723A (ko) * 2003-05-09 2006-02-20 산요가세이고교 가부시키가이샤 씨엠피 프로세스용 연마액 및 연마방법
WO2004101222A2 (en) * 2003-05-12 2004-11-25 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for step-ii copper liner and other associated materials and method of using same
US7186653B2 (en) * 2003-07-30 2007-03-06 Climax Engineered Materials, Llc Polishing slurries and methods for chemical mechanical polishing
JP4608196B2 (ja) * 2003-09-30 2011-01-05 株式会社フジミインコーポレーテッド 研磨用組成物
US20050090104A1 (en) * 2003-10-27 2005-04-28 Kai Yang Slurry compositions for chemical mechanical polishing of copper and barrier films
US7253111B2 (en) * 2004-04-21 2007-08-07 Rohm And Haas Electronic Materials Cmp Holding, Inc. Barrier polishing solution
JP2007053214A (ja) * 2005-08-17 2007-03-01 Sumitomo Bakelite Co Ltd 研磨用組成物
JP2007095946A (ja) * 2005-09-28 2007-04-12 Fujifilm Corp 金属用研磨液及び研磨方法
JP2007214155A (ja) * 2006-02-07 2007-08-23 Fujifilm Corp バリア用研磨液及び化学的機械的研磨方法
JP2007273910A (ja) * 2006-03-31 2007-10-18 Fujifilm Corp 研磨用組成液
US20070254485A1 (en) 2006-04-28 2007-11-01 Daxin Mao Abrasive composition for electrochemical mechanical polishing
US20080020680A1 (en) * 2006-07-24 2008-01-24 Cabot Microelectronics Corporation Rate-enhanced CMP compositions for dielectric films
US9129907B2 (en) * 2006-09-08 2015-09-08 Cabot Microelectronics Corporation Onium-containing CMP compositions and methods of use thereof
JP5094112B2 (ja) * 2006-12-28 2012-12-12 富士フイルム株式会社 研磨液
JP5094139B2 (ja) * 2007-01-23 2012-12-12 富士フイルム株式会社 研磨液
JP5202258B2 (ja) * 2008-03-25 2013-06-05 富士フイルム株式会社 金属研磨用組成物、及び化学的機械的研磨方法

Also Published As

Publication number Publication date
JP2012503329A (ja) 2012-02-02
TWI388639B (zh) 2013-03-11
CN102159662A (zh) 2011-08-17
WO2010033156A2 (en) 2010-03-25
US20100075502A1 (en) 2010-03-25
TW201016807A (en) 2010-05-01
KR101247890B1 (ko) 2013-03-26
EP2356192B1 (en) 2020-01-15
US8252687B2 (en) 2012-08-28
JP5619009B2 (ja) 2014-11-05
WO2010033156A3 (en) 2010-05-20
EP2356192A4 (en) 2013-05-22
CN102159662B (zh) 2014-05-21
IL211576A0 (en) 2011-05-31
IL211576A (en) 2014-05-28
KR20110069107A (ko) 2011-06-22
EP2356192A2 (en) 2011-08-17

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