CN102159662B - 用于低k电介质的阻挡物浆料 - Google Patents

用于低k电介质的阻挡物浆料 Download PDF

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Publication number
CN102159662B
CN102159662B CN200980136735.4A CN200980136735A CN102159662B CN 102159662 B CN102159662 B CN 102159662B CN 200980136735 A CN200980136735 A CN 200980136735A CN 102159662 B CN102159662 B CN 102159662B
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China
Prior art keywords
polishing composition
ppm
acid
substrate
polishing
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CN200980136735.4A
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English (en)
Chinese (zh)
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CN102159662A (zh
Inventor
李守田
史蒂文·格伦比恩
杰弗里·戴萨德
潘卡杰·辛格
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CMC Materials LLC
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Cabot Corp
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN200980136735.4A 2008-09-19 2009-09-03 用于低k电介质的阻挡物浆料 Active CN102159662B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US9860008P 2008-09-19 2008-09-19
US61/098,600 2008-09-19
PCT/US2009/004973 WO2010033156A2 (en) 2008-09-19 2009-09-03 Barrier slurry for low-k dielectrics

Publications (2)

Publication Number Publication Date
CN102159662A CN102159662A (zh) 2011-08-17
CN102159662B true CN102159662B (zh) 2014-05-21

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CN200980136735.4A Active CN102159662B (zh) 2008-09-19 2009-09-03 用于低k电介质的阻挡物浆料

Country Status (9)

Country Link
US (1) US8252687B2 (enExample)
EP (1) EP2356192B1 (enExample)
JP (1) JP5619009B2 (enExample)
KR (1) KR101247890B1 (enExample)
CN (1) CN102159662B (enExample)
IL (1) IL211576A (enExample)
MY (1) MY150487A (enExample)
TW (1) TWI388639B (enExample)
WO (1) WO2010033156A2 (enExample)

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US10358579B2 (en) * 2013-12-03 2019-07-23 Cabot Microelectronics Corporation CMP compositions and methods for polishing nickel phosphorous surfaces
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KR20220000284A (ko) * 2020-06-25 2022-01-03 삼성전자주식회사 화학적 기계적 연마용 슬러리 조성물
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Also Published As

Publication number Publication date
WO2010033156A3 (en) 2010-05-20
JP5619009B2 (ja) 2014-11-05
EP2356192A2 (en) 2011-08-17
US8252687B2 (en) 2012-08-28
TWI388639B (zh) 2013-03-11
IL211576A0 (en) 2011-05-31
JP2012503329A (ja) 2012-02-02
IL211576A (en) 2014-05-28
KR20110069107A (ko) 2011-06-22
KR101247890B1 (ko) 2013-03-26
MY150487A (en) 2014-01-30
US20100075502A1 (en) 2010-03-25
EP2356192B1 (en) 2020-01-15
CN102159662A (zh) 2011-08-17
WO2010033156A2 (en) 2010-03-25
EP2356192A4 (en) 2013-05-22
TW201016807A (en) 2010-05-01

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