TWI388619B - 半導體裝置,暨緩衝層用樹脂組成物,晶粒接合用樹脂組成物,及封包用樹脂組成物 - Google Patents
半導體裝置,暨緩衝層用樹脂組成物,晶粒接合用樹脂組成物,及封包用樹脂組成物 Download PDFInfo
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- TWI388619B TWI388619B TW95110255A TW95110255A TWI388619B TW I388619 B TWI388619 B TW I388619B TW 95110255 A TW95110255 A TW 95110255A TW 95110255 A TW95110255 A TW 95110255A TW I388619 B TWI388619 B TW I388619B
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- 239000011342 resin composition Substances 0.000 title claims abstract description 140
- 239000004065 semiconductor Substances 0.000 title claims abstract description 98
- 239000000872 buffer Substances 0.000 title claims abstract description 77
- 238000000576 coating method Methods 0.000 title claims abstract description 17
- 239000011248 coating agent Substances 0.000 title claims abstract description 16
- 229920005989 resin Polymers 0.000 claims description 164
- 239000011347 resin Substances 0.000 claims description 164
- 229920000647 polyepoxide Polymers 0.000 claims description 89
- 239000003822 epoxy resin Substances 0.000 claims description 88
- 239000000463 material Substances 0.000 claims description 64
- -1 aliphatic diamine Chemical class 0.000 claims description 48
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 33
- 238000005538 encapsulation Methods 0.000 claims description 30
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical class C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims description 24
- 239000004593 Epoxy Substances 0.000 claims description 23
- 150000001875 compounds Chemical class 0.000 claims description 22
- 239000011256 inorganic filler Substances 0.000 claims description 20
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 20
- 229920003986 novolac Polymers 0.000 claims description 18
- 229920001187 thermosetting polymer Polymers 0.000 claims description 18
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims description 16
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 claims description 15
- 125000003700 epoxy group Chemical group 0.000 claims description 15
- 125000006850 spacer group Chemical group 0.000 claims description 14
- 125000000962 organic group Chemical group 0.000 claims description 12
- 150000004985 diamines Chemical class 0.000 claims description 10
- 229930185605 Bisphenol Natural products 0.000 claims description 9
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims description 9
- 125000003118 aryl group Chemical group 0.000 claims description 9
- 239000004305 biphenyl Substances 0.000 claims description 9
- 235000010290 biphenyl Nutrition 0.000 claims description 8
- 125000006158 tetracarboxylic acid group Chemical group 0.000 claims description 8
- 239000000470 constituent Substances 0.000 claims description 7
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 claims description 6
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 claims description 6
- 125000001931 aliphatic group Chemical group 0.000 claims description 6
- 229930003836 cresol Natural products 0.000 claims description 6
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 claims description 6
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 claims description 6
- 229920001577 copolymer Polymers 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 125000004432 carbon atom Chemical group C* 0.000 claims description 4
- 125000000524 functional group Chemical group 0.000 claims description 4
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000178 monomer Substances 0.000 claims description 4
- KUBDPQJOLOUJRM-UHFFFAOYSA-N 2-(chloromethyl)oxirane;4-[2-(4-hydroxyphenyl)propan-2-yl]phenol Chemical compound ClCC1CO1.C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 KUBDPQJOLOUJRM-UHFFFAOYSA-N 0.000 claims description 3
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- 125000004185 ester group Chemical group 0.000 claims description 3
- 238000006068 polycondensation reaction Methods 0.000 claims description 3
- YQMXOIAIYXXXEE-UHFFFAOYSA-N 1-benzylpyrrolidin-3-ol Chemical compound C1C(O)CCN1CC1=CC=CC=C1 YQMXOIAIYXXXEE-UHFFFAOYSA-N 0.000 claims description 2
- SHKUUQIDMUMQQK-UHFFFAOYSA-N 2-[4-(oxiran-2-ylmethoxy)butoxymethyl]oxirane Chemical compound C1OC1COCCCCOCC1CO1 SHKUUQIDMUMQQK-UHFFFAOYSA-N 0.000 claims description 2
- WTYYGFLRBWMFRY-UHFFFAOYSA-N 2-[6-(oxiran-2-ylmethoxy)hexoxymethyl]oxirane Chemical compound C1OC1COCCCCCCOCC1CO1 WTYYGFLRBWMFRY-UHFFFAOYSA-N 0.000 claims description 2
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims description 2
- 125000003342 alkenyl group Chemical group 0.000 claims description 2
- 125000000304 alkynyl group Chemical group 0.000 claims description 2
- 125000003710 aryl alkyl group Chemical group 0.000 claims description 2
- 125000001033 ether group Chemical group 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 2
- 125000000468 ketone group Chemical group 0.000 claims description 2
- 229910000679 solder Inorganic materials 0.000 abstract description 12
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 69
- 239000000047 product Substances 0.000 description 61
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 26
- 238000000034 method Methods 0.000 description 25
- 239000003795 chemical substances by application Substances 0.000 description 22
- 239000005011 phenolic resin Substances 0.000 description 22
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 20
- 229910052788 barium Inorganic materials 0.000 description 20
- 239000000945 filler Substances 0.000 description 20
- 239000000203 mixture Substances 0.000 description 20
- 239000002253 acid Substances 0.000 description 19
- 239000002904 solvent Substances 0.000 description 19
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 18
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 18
- 229910000420 cerium oxide Inorganic materials 0.000 description 16
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 16
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 16
- 239000007822 coupling agent Substances 0.000 description 15
- 239000002245 particle Substances 0.000 description 15
- 229920005992 thermoplastic resin Polymers 0.000 description 15
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 13
- 239000007983 Tris buffer Substances 0.000 description 10
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 10
- 150000001336 alkenes Chemical class 0.000 description 9
- 238000011156 evaluation Methods 0.000 description 9
- 229920001721 polyimide Polymers 0.000 description 9
- 239000009719 polyimide resin Substances 0.000 description 9
- 125000004122 cyclic group Chemical group 0.000 description 8
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Substances C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 8
- 229920005672 polyolefin resin Polymers 0.000 description 8
- 239000002516 radical scavenger Substances 0.000 description 8
- 230000035882 stress Effects 0.000 description 8
- 239000002966 varnish Substances 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 7
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 7
- 150000001412 amines Chemical class 0.000 description 7
- 238000004132 cross linking Methods 0.000 description 7
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 7
- 239000004848 polyfunctional curative Substances 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 6
- 239000000654 additive Substances 0.000 description 6
- RJGDLRCDCYRQOQ-UHFFFAOYSA-N anthrone Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3CC2=C1 RJGDLRCDCYRQOQ-UHFFFAOYSA-N 0.000 description 6
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 description 6
- XMGQYMWWDOXHJM-UHFFFAOYSA-N limonene Chemical compound CC(=C)C1CCC(C)=CC1 XMGQYMWWDOXHJM-UHFFFAOYSA-N 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 239000003960 organic solvent Substances 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000008646 thermal stress Effects 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 229910052797 bismuth Inorganic materials 0.000 description 5
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 5
- 238000009434 installation Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 229910052707 ruthenium Inorganic materials 0.000 description 5
- 150000003839 salts Chemical class 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 4
- QQGYZOYWNCKGEK-UHFFFAOYSA-N 5-[(1,3-dioxo-2-benzofuran-5-yl)oxy]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(OC=2C=C3C(=O)OC(C3=CC=2)=O)=C1 QQGYZOYWNCKGEK-UHFFFAOYSA-N 0.000 description 4
- 239000004215 Carbon black (E152) Substances 0.000 description 4
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 4
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 4
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical group C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 150000001335 aliphatic alkanes Chemical class 0.000 description 4
- 239000003963 antioxidant agent Substances 0.000 description 4
- 239000002585 base Substances 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 229920001971 elastomer Polymers 0.000 description 4
- 239000003063 flame retardant Substances 0.000 description 4
- 229930195733 hydrocarbon Natural products 0.000 description 4
- 150000002430 hydrocarbons Chemical group 0.000 description 4
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 4
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 description 4
- 239000012766 organic filler Substances 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- 239000002798 polar solvent Substances 0.000 description 4
- 229920000768 polyamine Polymers 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000005060 rubber Substances 0.000 description 4
- 238000001721 transfer moulding Methods 0.000 description 4
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 4
- YJTKZCDBKVTVBY-UHFFFAOYSA-N 1,3-Diphenylbenzene Chemical group C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1 YJTKZCDBKVTVBY-UHFFFAOYSA-N 0.000 description 3
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 3
- 229910019142 PO4 Inorganic materials 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 239000002313 adhesive film Substances 0.000 description 3
- 230000003078 antioxidant effect Effects 0.000 description 3
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 150000002148 esters Chemical class 0.000 description 3
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 3
- 229960004337 hydroquinone Drugs 0.000 description 3
- 150000002466 imines Chemical class 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 3
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 239000012454 non-polar solvent Substances 0.000 description 3
- 229910052762 osmium Inorganic materials 0.000 description 3
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 3
- HKOOXMFOFWEVGF-UHFFFAOYSA-N phenylhydrazine Chemical compound NNC1=CC=CC=C1 HKOOXMFOFWEVGF-UHFFFAOYSA-N 0.000 description 3
- 229940067157 phenylhydrazine Drugs 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 3
- 239000010452 phosphate Substances 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 239000004014 plasticizer Substances 0.000 description 3
- 229920003192 poly(bis maleimide) Polymers 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 150000003254 radicals Chemical class 0.000 description 3
- 239000000454 talc Substances 0.000 description 3
- 229910052623 talc Inorganic materials 0.000 description 3
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 3
- 239000008096 xylene Substances 0.000 description 3
- GRWFGVWFFZKLTI-IUCAKERBSA-N (-)-α-pinene Chemical compound CC1=CC[C@@H]2C(C)(C)[C@H]1C2 GRWFGVWFFZKLTI-IUCAKERBSA-N 0.000 description 2
- MUTGBJKUEZFXGO-OLQVQODUSA-N (3as,7ar)-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1CCC[C@@H]2C(=O)OC(=O)[C@@H]21 MUTGBJKUEZFXGO-OLQVQODUSA-N 0.000 description 2
- RUEBPOOTFCZRBC-UHFFFAOYSA-N (5-methyl-2-phenyl-1h-imidazol-4-yl)methanol Chemical compound OCC1=C(C)NC(C=2C=CC=CC=2)=N1 RUEBPOOTFCZRBC-UHFFFAOYSA-N 0.000 description 2
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 2
- MQCPOLNSJCWPGT-UHFFFAOYSA-N 2,2'-Bisphenol F Chemical compound OC1=CC=CC=C1CC1=CC=CC=C1O MQCPOLNSJCWPGT-UHFFFAOYSA-N 0.000 description 2
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 2
- VOZKAJLKRJDJLL-UHFFFAOYSA-N 2,4-diaminotoluene Chemical compound CC1=CC=C(N)C=C1N VOZKAJLKRJDJLL-UHFFFAOYSA-N 0.000 description 2
- BWAPJIHJXDYDPW-UHFFFAOYSA-N 2,5-dimethyl-p-phenylenediamine Chemical compound CC1=CC(N)=C(C)C=C1N BWAPJIHJXDYDPW-UHFFFAOYSA-N 0.000 description 2
- OISVCGZHLKNMSJ-UHFFFAOYSA-N 2,6-dimethylpyridine Chemical compound CC1=CC=CC(C)=N1 OISVCGZHLKNMSJ-UHFFFAOYSA-N 0.000 description 2
- LKMJVFRMDSNFRT-UHFFFAOYSA-N 2-(methoxymethyl)oxirane Chemical compound COCC1CO1 LKMJVFRMDSNFRT-UHFFFAOYSA-N 0.000 description 2
- CQOZJDNCADWEKH-UHFFFAOYSA-N 2-[3,3-bis(2-hydroxyphenyl)propyl]phenol Chemical compound OC1=CC=CC=C1CCC(C=1C(=CC=CC=1)O)C1=CC=CC=C1O CQOZJDNCADWEKH-UHFFFAOYSA-N 0.000 description 2
- MFAWEYJGIGIYFH-UHFFFAOYSA-N 2-[4-(trimethoxymethyl)dodecoxymethyl]oxirane Chemical compound C(C1CO1)OCCCC(C(OC)(OC)OC)CCCCCCCC MFAWEYJGIGIYFH-UHFFFAOYSA-N 0.000 description 2
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 2
- NUIURNJTPRWVAP-UHFFFAOYSA-N 3,3'-Dimethylbenzidine Chemical group C1=C(N)C(C)=CC(C=2C=C(C)C(N)=CC=2)=C1 NUIURNJTPRWVAP-UHFFFAOYSA-N 0.000 description 2
- KMKWGXGSGPYISJ-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=CC(N)=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=C(N)C=C1 KMKWGXGSGPYISJ-UHFFFAOYSA-N 0.000 description 2
- MWSKJDNQKGCKPA-UHFFFAOYSA-N 6-methyl-3a,4,5,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1CC(C)=CC2C(=O)OC(=O)C12 MWSKJDNQKGCKPA-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 241000202785 Calyptronoma Species 0.000 description 2
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 229920000877 Melamine resin Polymers 0.000 description 2
- XEEHRQPQNJOFIQ-UHFFFAOYSA-N N(C1=CC=CC=C1)CCCC(C(OC)(OC)OC)CCCCCCCC Chemical compound N(C1=CC=CC=C1)CCCC(C(OC)(OC)OC)CCCCCCCC XEEHRQPQNJOFIQ-UHFFFAOYSA-N 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 229920000459 Nitrile rubber Polymers 0.000 description 2
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 2
- 239000005062 Polybutadiene Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 2
- FDLQZKYLHJJBHD-UHFFFAOYSA-N [3-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=CC(CN)=C1 FDLQZKYLHJJBHD-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 125000002723 alicyclic group Chemical group 0.000 description 2
- 150000008064 anhydrides Chemical class 0.000 description 2
- 150000001450 anions Chemical class 0.000 description 2
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 239000003849 aromatic solvent Substances 0.000 description 2
- HLPKYOCVWVMBMR-UHFFFAOYSA-N azane benzylbenzene Chemical compound N.N.C=1C=CC=CC=1CC1=CC=CC=C1 HLPKYOCVWVMBMR-UHFFFAOYSA-N 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- GGNQRNBDZQJCCN-UHFFFAOYSA-N benzene-1,2,4-triol Chemical compound OC1=CC=C(O)C(O)=C1 GGNQRNBDZQJCCN-UHFFFAOYSA-N 0.000 description 2
- IMHDGJOMLMDPJN-UHFFFAOYSA-N biphenyl-2,2'-diol Chemical compound OC1=CC=CC=C1C1=CC=CC=C1O IMHDGJOMLMDPJN-UHFFFAOYSA-N 0.000 description 2
- VHRGRCVQAFMJIZ-UHFFFAOYSA-N cadaverine Chemical compound NCCCCCN VHRGRCVQAFMJIZ-UHFFFAOYSA-N 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 150000001924 cycloalkanes Chemical class 0.000 description 2
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- YLQWCDOCJODRMT-UHFFFAOYSA-N fluoren-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3C2=C1 YLQWCDOCJODRMT-UHFFFAOYSA-N 0.000 description 2
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 2
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 150000002366 halogen compounds Chemical class 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- 229940087305 limonene Drugs 0.000 description 2
- 235000001510 limonene Nutrition 0.000 description 2
- 229940018564 m-phenylenediamine Drugs 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- RTWNYYOXLSILQN-UHFFFAOYSA-N methanediamine Chemical compound NCN RTWNYYOXLSILQN-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- BQJCRHHNABKAKU-KBQPJGBKSA-N morphine Chemical compound O([C@H]1[C@H](C=C[C@H]23)O)C4=C5[C@@]12CCN(C)[C@@H]3CC5=CC=C4O BQJCRHHNABKAKU-KBQPJGBKSA-N 0.000 description 2
- AHNZVFVNAQKFBB-UHFFFAOYSA-N n-amino-n-(n-aminoanilino)aniline Chemical compound C=1C=CC=CC=1N(N)N(N)C1=CC=CC=C1 AHNZVFVNAQKFBB-UHFFFAOYSA-N 0.000 description 2
- 125000001624 naphthyl group Chemical group 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 2
- 229920006122 polyamide resin Polymers 0.000 description 2
- 229920002857 polybutadiene Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- KIDHWZJUCRJVML-UHFFFAOYSA-N putrescine Chemical compound NCCCCN KIDHWZJUCRJVML-UHFFFAOYSA-N 0.000 description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- 238000007363 ring formation reaction Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 125000003396 thiol group Chemical group [H]S* 0.000 description 2
- ARCGXLSVLAOJQL-UHFFFAOYSA-N trimellitic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 ARCGXLSVLAOJQL-UHFFFAOYSA-N 0.000 description 2
- 239000001993 wax Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- CTKPHIBQMJQHOG-UHFFFAOYSA-N (2-nitrophenyl)methyl acetate Chemical compound CC(=O)OCC1=CC=CC=C1[N+]([O-])=O CTKPHIBQMJQHOG-UHFFFAOYSA-N 0.000 description 1
- HCNHNBLSNVSJTJ-UHFFFAOYSA-N 1,1-Bis(4-hydroxyphenyl)ethane Chemical compound C=1C=C(O)C=CC=1C(C)C1=CC=C(O)C=C1 HCNHNBLSNVSJTJ-UHFFFAOYSA-N 0.000 description 1
- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 description 1
- PWGJDPKCLMLPJW-UHFFFAOYSA-N 1,8-diaminooctane Chemical compound NCCCCCCCCN PWGJDPKCLMLPJW-UHFFFAOYSA-N 0.000 description 1
- XAZPKEBWNIUCKF-UHFFFAOYSA-N 1-[4-[4-[2-[4-[4-(2,5-dioxopyrrol-1-yl)phenoxy]phenyl]propan-2-yl]phenoxy]phenyl]pyrrole-2,5-dione Chemical compound C=1C=C(OC=2C=CC(=CC=2)N2C(C=CC2=O)=O)C=CC=1C(C)(C)C(C=C1)=CC=C1OC(C=C1)=CC=C1N1C(=O)C=CC1=O XAZPKEBWNIUCKF-UHFFFAOYSA-N 0.000 description 1
- GYSCBCSGKXNZRH-UHFFFAOYSA-N 1-benzothiophene-2-carboxamide Chemical compound C1=CC=C2SC(C(=O)N)=CC2=C1 GYSCBCSGKXNZRH-UHFFFAOYSA-N 0.000 description 1
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 1
- FWTVCFLAJJDTLG-UHFFFAOYSA-N 1-ethenyl-4-[(4-ethenylphenyl)methyl]benzene Chemical compound C1=CC(C=C)=CC=C1CC1=CC=C(C=C)C=C1 FWTVCFLAJJDTLG-UHFFFAOYSA-N 0.000 description 1
- 238000005160 1H NMR spectroscopy Methods 0.000 description 1
- KGRVJHAUYBGFFP-UHFFFAOYSA-N 2,2'-Methylenebis(4-methyl-6-tert-butylphenol) Chemical compound CC(C)(C)C1=CC(C)=CC(CC=2C(=C(C=C(C)C=2)C(C)(C)C)O)=C1O KGRVJHAUYBGFFP-UHFFFAOYSA-N 0.000 description 1
- ZVDSMYGTJDFNHN-UHFFFAOYSA-N 2,4,6-trimethylbenzene-1,3-diamine Chemical group CC1=CC(C)=C(N)C(C)=C1N ZVDSMYGTJDFNHN-UHFFFAOYSA-N 0.000 description 1
- XGKKWUNSNDTGDS-UHFFFAOYSA-N 2,5-dimethylheptane-1,7-diamine Chemical compound NCC(C)CCC(C)CCN XGKKWUNSNDTGDS-UHFFFAOYSA-N 0.000 description 1
- MJAVQHPPPBDYAN-UHFFFAOYSA-N 2,6-dimethylbenzene-1,4-diamine Chemical compound CC1=CC(N)=CC(C)=C1N MJAVQHPPPBDYAN-UHFFFAOYSA-N 0.000 description 1
- RJZUHVCJRWEELT-UHFFFAOYSA-N 2-(2,4-dinitrophenyl)-1-phenylethanesulfonic acid Chemical compound C1=CC=C(C=C1)C(CC2=C(C=C(C=C2)[N+](=O)[O-])[N+](=O)[O-])S(=O)(=O)O RJZUHVCJRWEELT-UHFFFAOYSA-N 0.000 description 1
- WTIBMPVQHDBSOD-UHFFFAOYSA-N 2-(2,6-dinitrophenyl)-1-phenylethanesulfonic acid Chemical compound C=1C=CC=CC=1C(S(=O)(=O)O)CC1=C([N+]([O-])=O)C=CC=C1[N+]([O-])=O WTIBMPVQHDBSOD-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- SHOANEAFHGLDHL-UHFFFAOYSA-N 2-(2-nitrophenyl)-1-phenylethanesulfonic acid Chemical compound C=1C=CC=CC=1C(S(=O)(=O)O)CC1=CC=CC=C1[N+]([O-])=O SHOANEAFHGLDHL-UHFFFAOYSA-N 0.000 description 1
- LUEVFLFUJHCFGU-UHFFFAOYSA-N 2-(2-nitrophenyl)ethyl dihydrogen phosphate Chemical compound OP(O)(=O)OCCC1=CC=CC=C1[N+]([O-])=O LUEVFLFUJHCFGU-UHFFFAOYSA-N 0.000 description 1
- WVXLLHWEQSZBLW-UHFFFAOYSA-N 2-(4-acetyl-2-methoxyphenoxy)acetic acid Chemical compound COC1=CC(C(C)=O)=CC=C1OCC(O)=O WVXLLHWEQSZBLW-UHFFFAOYSA-N 0.000 description 1
- YCUKMYFJDGKQFC-UHFFFAOYSA-N 2-(octan-3-yloxymethyl)oxirane Chemical compound CCCCCC(CC)OCC1CO1 YCUKMYFJDGKQFC-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- HJEORQYOUWYAMR-UHFFFAOYSA-N 2-[(2-butylphenoxy)methyl]oxirane Chemical compound CCCCC1=CC=CC=C1OCC1OC1 HJEORQYOUWYAMR-UHFFFAOYSA-N 0.000 description 1
- CUFXMPWHOWYNSO-UHFFFAOYSA-N 2-[(4-methylphenoxy)methyl]oxirane Chemical compound C1=CC(C)=CC=C1OCC1OC1 CUFXMPWHOWYNSO-UHFFFAOYSA-N 0.000 description 1
- PQAMFDRRWURCFQ-UHFFFAOYSA-N 2-ethyl-1h-imidazole Chemical compound CCC1=NC=CN1 PQAMFDRRWURCFQ-UHFFFAOYSA-N 0.000 description 1
- VKEIPALYOJMDAC-UHFFFAOYSA-N 3,3,3-trichloroprop-1-ene Chemical compound ClC(Cl)(Cl)C=C VKEIPALYOJMDAC-UHFFFAOYSA-N 0.000 description 1
- WPMYUUITDBHVQZ-UHFFFAOYSA-N 3-(3,5-ditert-butyl-4-hydroxyphenyl)propanoic acid Chemical compound CC(C)(C)C1=CC(CCC(O)=O)=CC(C(C)(C)C)=C1O WPMYUUITDBHVQZ-UHFFFAOYSA-N 0.000 description 1
- NDXGRHCEHPFUSU-UHFFFAOYSA-N 3-(3-aminophenyl)aniline Chemical group NC1=CC=CC(C=2C=C(N)C=CC=2)=C1 NDXGRHCEHPFUSU-UHFFFAOYSA-N 0.000 description 1
- LBIHNTAFJVHBLJ-UHFFFAOYSA-N 3-(triethoxymethyl)undec-1-ene Chemical compound C(=C)C(C(OCC)(OCC)OCC)CCCCCCCC LBIHNTAFJVHBLJ-UHFFFAOYSA-N 0.000 description 1
- CKOFBUUFHALZGK-UHFFFAOYSA-N 3-[(3-aminophenyl)methyl]aniline Chemical compound NC1=CC=CC(CC=2C=C(N)C=CC=2)=C1 CKOFBUUFHALZGK-UHFFFAOYSA-N 0.000 description 1
- DKKYOQYISDAQER-UHFFFAOYSA-N 3-[3-(3-aminophenoxy)phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=C(OC=3C=C(N)C=CC=3)C=CC=2)=C1 DKKYOQYISDAQER-UHFFFAOYSA-N 0.000 description 1
- YEEIWUUBRYZFEH-UHFFFAOYSA-N 3-methoxyhexane-1,6-diamine Chemical compound NCCC(OC)CCCN YEEIWUUBRYZFEH-UHFFFAOYSA-N 0.000 description 1
- SGEWZUYVXQESSB-UHFFFAOYSA-N 3-methylheptane-1,7-diamine Chemical compound NCCC(C)CCCCN SGEWZUYVXQESSB-UHFFFAOYSA-N 0.000 description 1
- ITQTTZVARXURQS-UHFFFAOYSA-N 3-methylpyridine Chemical compound CC1=CC=CN=C1 ITQTTZVARXURQS-UHFFFAOYSA-N 0.000 description 1
- WECDUOXQLAIPQW-UHFFFAOYSA-N 4,4'-Methylene bis(2-methylaniline) Chemical compound C1=C(N)C(C)=CC(CC=2C=C(C)C(N)=CC=2)=C1 WECDUOXQLAIPQW-UHFFFAOYSA-N 0.000 description 1
- ICNFHJVPAJKPHW-UHFFFAOYSA-N 4,4'-Thiodianiline Chemical compound C1=CC(N)=CC=C1SC1=CC=C(N)C=C1 ICNFHJVPAJKPHW-UHFFFAOYSA-N 0.000 description 1
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 1
- UITKHKNFVCYWNG-UHFFFAOYSA-N 4-(3,4-dicarboxybenzoyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 UITKHKNFVCYWNG-UHFFFAOYSA-N 0.000 description 1
- GNPSQUCXOBDIDY-UHFFFAOYSA-N 4-(trimethoxymethyl)dodecane Chemical compound C(CCCCCCC)C(C(OC)(OC)OC)CCC GNPSQUCXOBDIDY-UHFFFAOYSA-N 0.000 description 1
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 1
- DZIHTWJGPDVSGE-UHFFFAOYSA-N 4-[(4-aminocyclohexyl)methyl]cyclohexan-1-amine Chemical compound C1CC(N)CCC1CC1CCC(N)CC1 DZIHTWJGPDVSGE-UHFFFAOYSA-N 0.000 description 1
- AZZWZMUXHALBCQ-UHFFFAOYSA-N 4-[(4-hydroxy-3,5-dimethylphenyl)methyl]-2,6-dimethylphenol Chemical compound CC1=C(O)C(C)=CC(CC=2C=C(C)C(O)=C(C)C=2)=C1 AZZWZMUXHALBCQ-UHFFFAOYSA-N 0.000 description 1
- DLNLVVPBWVRFCT-UHFFFAOYSA-N 4-[1,1-bis(3,5-dibromo-4-hydroxyphenyl)ethyl]-2,6-dibromophenol Chemical compound C=1C(Br)=C(O)C(Br)=CC=1C(C=1C=C(Br)C(O)=C(Br)C=1)(C)C1=CC(Br)=C(O)C(Br)=C1 DLNLVVPBWVRFCT-UHFFFAOYSA-N 0.000 description 1
- HSBOCPVKJMBWTF-UHFFFAOYSA-N 4-[1-(4-aminophenyl)ethyl]aniline Chemical compound C=1C=C(N)C=CC=1C(C)C1=CC=C(N)C=C1 HSBOCPVKJMBWTF-UHFFFAOYSA-N 0.000 description 1
- WUPRYUDHUFLKFL-UHFFFAOYSA-N 4-[3-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(OC=2C=CC(N)=CC=2)=C1 WUPRYUDHUFLKFL-UHFFFAOYSA-N 0.000 description 1
- 125000004203 4-hydroxyphenyl group Chemical group [H]OC1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- ZYUVGYBAPZYKSA-UHFFFAOYSA-N 5-(3-hydroxybutan-2-yl)-4-methylbenzene-1,3-diol Chemical compound CC(O)C(C)C1=CC(O)=CC(O)=C1C ZYUVGYBAPZYKSA-UHFFFAOYSA-N 0.000 description 1
- IIEKUGPEYLGWQQ-UHFFFAOYSA-N 5-[4-(4-amino-2-methylpentyl)phenyl]-4-methylpentan-2-amine Chemical compound CC(N)CC(C)CC1=CC=C(CC(C)CC(C)N)C=C1 IIEKUGPEYLGWQQ-UHFFFAOYSA-N 0.000 description 1
- FAYVAXYICXQWOP-UHFFFAOYSA-M 9,10-dimethoxyanthracene-2-sulfonate Chemical compound [O-]S(=O)(=O)C1=CC=C2C(OC)=C(C=CC=C3)C3=C(OC)C2=C1 FAYVAXYICXQWOP-UHFFFAOYSA-M 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical group NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- DJHGAFSJWGLOIV-UHFFFAOYSA-N Arsenic acid Chemical compound O[As](O)(O)=O DJHGAFSJWGLOIV-UHFFFAOYSA-N 0.000 description 1
- DBJFSFSBHGPDPG-UHFFFAOYSA-N C(C(=C)C)(=O)OCCCC(C(OC)(OC)OC)CCCCCCCC Chemical compound C(C(=C)C)(=O)OCCCC(C(OC)(OC)OC)CCCCCCCC DBJFSFSBHGPDPG-UHFFFAOYSA-N 0.000 description 1
- XUBXJIUEXXKSTE-UHFFFAOYSA-N C(C1CO1)CCCC(C(OC)(OC)OC)CCCCCCCC Chemical compound C(C1CO1)CCCC(C(OC)(OC)OC)CCCCCCCC XUBXJIUEXXKSTE-UHFFFAOYSA-N 0.000 description 1
- IZKPBMZLBZPOLI-UHFFFAOYSA-N CCCOC(C=N1)=CC=C[S+]1Cl Chemical compound CCCOC(C=N1)=CC=C[S+]1Cl IZKPBMZLBZPOLI-UHFFFAOYSA-N 0.000 description 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GHVNFZFCNZKVNT-UHFFFAOYSA-N Decanoic acid Natural products CCCCCCCCCC(O)=O GHVNFZFCNZKVNT-UHFFFAOYSA-N 0.000 description 1
- MHZGKXUYDGKKIU-UHFFFAOYSA-N Decylamine Chemical compound CCCCCCCCCCN MHZGKXUYDGKKIU-UHFFFAOYSA-N 0.000 description 1
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 101000821100 Homo sapiens Synapsin-1 Proteins 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- BSSOHMUMHHDZLF-UHFFFAOYSA-N NC1=CC=CC=C1.NC1=NC(N)=NC(N)=N1 Chemical compound NC1=CC=CC=C1.NC1=NC(N)=NC(N)=N1 BSSOHMUMHHDZLF-UHFFFAOYSA-N 0.000 description 1
- MHABMANUFPZXEB-UHFFFAOYSA-N O-demethyl-aloesaponarin I Natural products O=C1C2=CC=CC(O)=C2C(=O)C2=C1C=C(O)C(C(O)=O)=C2C MHABMANUFPZXEB-UHFFFAOYSA-N 0.000 description 1
- FQYUMYWMJTYZTK-UHFFFAOYSA-N Phenyl glycidyl ether Chemical compound C1OC1COC1=CC=CC=C1 FQYUMYWMJTYZTK-UHFFFAOYSA-N 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 206010036790 Productive cough Diseases 0.000 description 1
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 description 1
- 229910021603 Ruthenium iodide Inorganic materials 0.000 description 1
- AWMVMTVKBNGEAK-UHFFFAOYSA-N Styrene oxide Chemical compound C1OC1C1=CC=CC=C1 AWMVMTVKBNGEAK-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 102100021905 Synapsin-1 Human genes 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical group C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- 208000034487 X-linked 50 intellectual disability Diseases 0.000 description 1
- YPPVLYIFEAESGO-UHFFFAOYSA-N [2,3-bis(methylsulfonyloxy)phenyl] methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=CC(OS(C)(=O)=O)=C1OS(C)(=O)=O YPPVLYIFEAESGO-UHFFFAOYSA-N 0.000 description 1
- ISKQADXMHQSTHK-UHFFFAOYSA-N [4-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=C(CN)C=C1 ISKQADXMHQSTHK-UHFFFAOYSA-N 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 1
- 239000004844 aliphatic epoxy resin Substances 0.000 description 1
- 229920003232 aliphatic polyester Polymers 0.000 description 1
- 229910001413 alkali metal ion Inorganic materials 0.000 description 1
- MVNCAPSFBDBCGF-UHFFFAOYSA-N alpha-pinene Natural products CC1=CCC23C1CC2C3(C)C MVNCAPSFBDBCGF-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 125000005577 anthracene group Chemical group 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000006286 aqueous extract Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 229940000488 arsenic acid Drugs 0.000 description 1
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- 125000005605 benzo group Chemical group 0.000 description 1
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- YISOXLVRWFDIKD-UHFFFAOYSA-N bismuth;borate Chemical compound [Bi+3].[O-]B([O-])[O-] YISOXLVRWFDIKD-UHFFFAOYSA-N 0.000 description 1
- MNMKEULGSNUTIA-UHFFFAOYSA-K bismuth;methanesulfonate Chemical compound [Bi+3].CS([O-])(=O)=O.CS([O-])(=O)=O.CS([O-])(=O)=O MNMKEULGSNUTIA-UHFFFAOYSA-K 0.000 description 1
- 239000004841 bisphenol A epoxy resin Substances 0.000 description 1
- 239000004842 bisphenol F epoxy resin Substances 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- WKDNYTOXBCRNPV-UHFFFAOYSA-N bpda Chemical compound C1=C2C(=O)OC(=O)C2=CC(C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 WKDNYTOXBCRNPV-UHFFFAOYSA-N 0.000 description 1
- NTXGQCSETZTARF-UHFFFAOYSA-N buta-1,3-diene;prop-2-enenitrile Chemical group C=CC=C.C=CC#N NTXGQCSETZTARF-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 229960004424 carbon dioxide Drugs 0.000 description 1
- 235000011089 carbon dioxide Nutrition 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000004203 carnauba wax Substances 0.000 description 1
- 235000013869 carnauba wax Nutrition 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- KKFPIBHAPSRIPB-UHFFFAOYSA-N cerium(3+);oxygen(2-);hydrate Chemical compound O.[O-2].[O-2].[O-2].[Ce+3].[Ce+3] KKFPIBHAPSRIPB-UHFFFAOYSA-N 0.000 description 1
- 239000007810 chemical reaction solvent Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- ZKXWKVVCCTZOLD-UHFFFAOYSA-N copper;4-hydroxypent-3-en-2-one Chemical compound [Cu].CC(O)=CC(C)=O.CC(O)=CC(C)=O ZKXWKVVCCTZOLD-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- VKIRRGRTJUUZHS-UHFFFAOYSA-N cyclohexane-1,4-diamine Chemical compound NC1CCC(N)CC1 VKIRRGRTJUUZHS-UHFFFAOYSA-N 0.000 description 1
- ZWAJLVLEBYIOTI-UHFFFAOYSA-N cyclohexene oxide Chemical compound C1CCCC2OC21 ZWAJLVLEBYIOTI-UHFFFAOYSA-N 0.000 description 1
- FWFSEYBSWVRWGL-UHFFFAOYSA-N cyclohexene oxide Natural products O=C1CCCC=C1 FWFSEYBSWVRWGL-UHFFFAOYSA-N 0.000 description 1
- YQLZOAVZWJBZSY-UHFFFAOYSA-N decane-1,10-diamine Chemical compound NCCCCCCCCCCN YQLZOAVZWJBZSY-UHFFFAOYSA-N 0.000 description 1
- NHADDZMCASKINP-HTRCEHHLSA-N decarboxydihydrocitrinin Natural products C1=C(O)C(C)=C2[C@H](C)[C@@H](C)OCC2=C1O NHADDZMCASKINP-HTRCEHHLSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000012954 diazonium Substances 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-O diazynium Chemical compound [NH+]#N IJGRMHOSHXDMSA-UHFFFAOYSA-O 0.000 description 1
- 229940117389 dichlorobenzene Drugs 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 150000005205 dihydroxybenzenes Chemical class 0.000 description 1
- HPYNZHMRTTWQTB-UHFFFAOYSA-N dimethylpyridine Natural products CC1=CC=CN=C1C HPYNZHMRTTWQTB-UHFFFAOYSA-N 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 229930004069 diterpene Natural products 0.000 description 1
- BXKDSDJJOVIHMX-UHFFFAOYSA-N edrophonium chloride Chemical compound [Cl-].CC[N+](C)(C)C1=CC=CC(O)=C1 BXKDSDJJOVIHMX-UHFFFAOYSA-N 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- PWSKHLMYTZNYKO-UHFFFAOYSA-N heptane-1,7-diamine Chemical compound NCCCCCCCN PWSKHLMYTZNYKO-UHFFFAOYSA-N 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 125000000879 imine group Chemical group 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 229910001410 inorganic ion Inorganic materials 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 150000002596 lactones Chemical class 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 125000005395 methacrylic acid group Chemical group 0.000 description 1
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 229960005181 morphine Drugs 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- AFFLGGQVNFXPEV-UHFFFAOYSA-N n-decene Natural products CCCCCCCCC=C AFFLGGQVNFXPEV-UHFFFAOYSA-N 0.000 description 1
- NXPPAOGUKPJVDI-UHFFFAOYSA-N naphthalene-1,2-diol Chemical class C1=CC=CC2=C(O)C(O)=CC=C21 NXPPAOGUKPJVDI-UHFFFAOYSA-N 0.000 description 1
- KQSABULTKYLFEV-UHFFFAOYSA-N naphthalene-1,5-diamine Chemical compound C1=CC=C2C(N)=CC=CC2=C1N KQSABULTKYLFEV-UHFFFAOYSA-N 0.000 description 1
- FZZQNEVOYIYFPF-UHFFFAOYSA-N naphthalene-1,6-diol Chemical compound OC1=CC=CC2=CC(O)=CC=C21 FZZQNEVOYIYFPF-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 208000023741 non-syndromic X-linked intellectual disability 50 Diseases 0.000 description 1
- SXJVFQLYZSNZBT-UHFFFAOYSA-N nonane-1,9-diamine Chemical compound NCCCCCCCCCN SXJVFQLYZSNZBT-UHFFFAOYSA-N 0.000 description 1
- 239000004843 novolac epoxy resin Substances 0.000 description 1
- 150000001451 organic peroxides Chemical class 0.000 description 1
- 150000002903 organophosphorus compounds Chemical class 0.000 description 1
- 229910000487 osmium oxide Inorganic materials 0.000 description 1
- 150000002923 oximes Chemical class 0.000 description 1
- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 description 1
- JIWAALDUIFCBLV-UHFFFAOYSA-N oxoosmium Chemical compound [Os]=O JIWAALDUIFCBLV-UHFFFAOYSA-N 0.000 description 1
- 125000001820 oxy group Chemical group [*:1]O[*:2] 0.000 description 1
- 125000001037 p-tolyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1*)C([H])([H])[H] 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 125000000538 pentafluorophenyl group Chemical group FC1=C(F)C(F)=C(*)C(F)=C1F 0.000 description 1
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
- 150000004714 phosphonium salts Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- XKJCHHZQLQNZHY-UHFFFAOYSA-N phthalimide Chemical compound C1=CC=C2C(=O)NC(=O)C2=C1 XKJCHHZQLQNZHY-UHFFFAOYSA-N 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920000233 poly(alkylene oxides) Polymers 0.000 description 1
- 229920005575 poly(amic acid) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920001195 polyisoprene Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 108010026466 polyproline Proteins 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- MIROPXUFDXCYLG-UHFFFAOYSA-N pyridine-2,5-diamine Chemical compound NC1=CC=C(N)N=C1 MIROPXUFDXCYLG-UHFFFAOYSA-N 0.000 description 1
- VHNQIURBCCNWDN-UHFFFAOYSA-N pyridine-2,6-diamine Chemical compound NC1=CC=CC(N)=N1 VHNQIURBCCNWDN-UHFFFAOYSA-N 0.000 description 1
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical class OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 1
- 150000004060 quinone imines Chemical class 0.000 description 1
- GRWFGVWFFZKLTI-UHFFFAOYSA-N rac-alpha-Pinene Natural products CC1=CCC2C(C)(C)C1C2 GRWFGVWFFZKLTI-UHFFFAOYSA-N 0.000 description 1
- 239000007870 radical polymerization initiator Substances 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 229920003987 resole Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- LJZVDOUZSMHXJH-UHFFFAOYSA-K ruthenium(3+);triiodide Chemical compound [Ru+3].[I-].[I-].[I-] LJZVDOUZSMHXJH-UHFFFAOYSA-K 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 210000003802 sputum Anatomy 0.000 description 1
- 208000024794 sputum Diseases 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical group [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- USFPINLPPFWTJW-UHFFFAOYSA-N tetraphenylphosphonium Chemical compound C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 USFPINLPPFWTJW-UHFFFAOYSA-N 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 235000010215 titanium dioxide Nutrition 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- PBIMIGNDTBRRPI-UHFFFAOYSA-N trifluoro borate Chemical compound FOB(OF)OF PBIMIGNDTBRRPI-UHFFFAOYSA-N 0.000 description 1
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 1
- YFTHZRPMJXBUME-UHFFFAOYSA-N tripropylamine Chemical compound CCCN(CCC)CCC YFTHZRPMJXBUME-UHFFFAOYSA-N 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 description 1
- 229960000834 vinyl ether Drugs 0.000 description 1
- 125000006839 xylylene group Chemical group 0.000 description 1
- NHXVNEDMKGDNPR-UHFFFAOYSA-N zinc;pentane-2,4-dione Chemical compound [Zn+2].CC(=O)[CH-]C(C)=O.CC(=O)[CH-]C(C)=O NHXVNEDMKGDNPR-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/02—Polycondensates containing more than one epoxy group per molecule
- C08G59/027—Polycondensates containing more than one epoxy group per molecule obtained by epoxidation of unsaturated precursor, e.g. polymer or monomer
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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Description
本發明係關於耐回流焊性優良之半導體裝置(以下亦稱為“組件”)者,又,係關於使用於其之緩衝層用樹脂組成物(以下亦稱為“緩衝層材”)、半導體晶粒接合用樹脂組成物(以下亦稱為“晶粒接合材”)、半導體封包用樹脂組成物(以下亦稱為“封包材”)。
近年來,將半導體裝置安裝至基板時,根據對環境之考慮,使用並不使用鉛之無鉛焊錫之情形增多。通常無鉛焊錫之熔點高於習知所使用之錫-鉛共晶焊錫,安裝半導體裝置時,必須於較高約20~30℃之溫度下進行安裝。伴隨該安裝溫度之高溫化,構成半導體裝置之各構件間受到習知以上之熱應力,封包用樹脂組成物中水分之劇烈蒸發而造成蒸氣壓上升,故而易於產生構件間之剝離或組件裂縫等不良情形。
又,因最先端之半導體中所使用之低介電係數有機層間絕緣膜,強度較弱而較為脆弱,故而存在由於安裝時之熱應力而破壞該層之問題。
考慮到如此之狀況,為獲得耐回流焊性良好之半導體裝置,所使用之各構件必須要求習知以上之高度可靠性。
對於如此之要求,最有效之方法係將封包用樹脂組成物之吸濕抑制於最小限度。至此,提出有低吸水樹脂之應用、無機填充材之高填充化等(例如參照專利文獻1)。然而,對於要求更高度之可靠性,僅是封包用樹脂組成物之低吸水化的話,則存在極限。
繼而作為有效方法,可列舉減小構成半導體裝置之各構件界面之熱應力。為此,具體而言,以緩和接近構件間熱膨脹係數或者構件間熱膨脹係數不一致而產生之應力為目的,必須減小各構件之彈性率。另一方面,包含多數個構成要素之半導體裝置中,亦存在僅減小部分熱應力而並不充分,因局部熱應力減小而增加其他界面不良之情形。故而,必須調整多數個構件間之物性,並減小各構件界面之熱應力。
專利文獻1:日本專利特開2002-145995號公報(第2~6頁)
本發明之目的在於提供一種於使用無鉛焊錫之面安裝中耐回流焊性良好且具有較高可靠性之半導體裝置,暨使用於其之緩衝層用樹脂組成物,晶粒接合用樹脂組成物,及半導體封包用樹脂組成物。
本發明之半導體裝置,其係藉由晶粒接合用樹脂組成物之硬化物,將以緩衝層用樹脂組成物之硬化物覆蓋表面之半導體元件搭載於導線架之墊片上,並藉由封包用樹脂組成物之硬化物封包搭載於上述導線架之墊片上之半導體元件而成者,其特徵在於,上述緩衝層用樹脂組成物之硬化物於25℃時之彈性率為0.5 GPa以上、2.0 GPa以下,上述晶粒接合用樹脂組成物之硬化物於260℃時之彈性率為1 MPa以上、120 MPa以下,上述封包用樹脂組成物之硬化物於260℃時之彈性率為400 MPa以上、1200 MPa以下,該硬化物於260℃時之熱膨脹係數為20 ppm以上、50 ppm以下,且上述封包用樹脂組成物之硬化物於260℃時之彈性率與該硬化物於260℃時之熱膨脹係數之積為8,000以上、45,000以下。
本發明之緩衝層用樹脂組成物,係於藉由晶粒接合用樹脂組成物之硬化物,將以緩衝層用樹脂組成物之硬化物覆蓋表面之半導體元件搭載於導線架之墊片上,並藉由封包用樹脂組成物之硬化物封包上述搭載於導線架之墊片上之半導體元件而成的半導體裝置中所使用之樹脂組成物,其特徵在於,硬化物於25℃時之彈性率為0.5 GPa以上、2.0 GPa以下。
本發明之晶粒接合用樹脂組成物,係於藉由晶粒接合用樹脂組成物之硬化物,將以緩衝層用樹脂組成物之硬化物覆蓋表面之半導體元件而搭載於導線架之墊片上,並藉由封包用樹脂組成物之硬化物封包搭載於上述導線架之墊片上之半導體元件而成的半導體裝置中所使用之樹脂組成物,其特徵在於,硬化物於260℃時之彈性率為1 MPa以上、120 MPa以下。
本發明之封包用樹脂組成物,係於藉由晶粒接合用樹脂組成物之硬化物,將以緩衝層用樹脂組成物之硬化物覆蓋表面之半導體元件搭載於導線架之墊片上,並藉由封包用樹脂組成物之硬化物封包搭載於上述導線架之墊片上之半導體元件而成的半導體裝置中所使用之樹脂組成物,其特徵在於,硬化物於260℃時之彈性率為400 MPa以上、1200 MPa以下,260℃時之熱膨脹係數為20 ppm以上、50 ppm以下,上述硬化物於260℃時之彈性率與該硬化物於260℃時之熱膨脹係數之積為8,000以上、45,000以下。
本發明之緩衝層用樹脂組成物、晶粒接合用樹脂組成物以及封包用樹脂組成物,藉由如上所述之組成,可獲得具有上述範圍之彈性率等物性值之硬化物。
藉由本發明,可提供一種使用無鉛焊錫之安裝時,耐回流焊性良好且具有較高可靠性之半導體裝置,進而可提供一種可使用於其之緩衝層用樹脂組成物、晶粒接合用樹脂組成物、及封包用樹脂組成物。
藉由本發明而獲得之半導體裝置,因使用具有特定彈性率等之緩衝層用樹脂組成物之硬化物、晶粒接合用樹脂組成物之硬化物、及封包用樹脂組成物之硬化物,故而,於使用無鉛焊錫之安裝中耐回流焊性良好、且具有較高可靠性。
本發明之半導體裝置,其係藉由晶粒接合用樹脂組成物之硬化物(以下亦稱為“晶粒接合材硬化物”),將以緩衝層用樹脂組成物之硬化物(以下亦稱為“緩衝層膜”)覆蓋表面之半導體元件搭載於導線架之墊片上,並藉由封包用樹脂組成物之硬化物(以下亦稱為“封包材硬化物”)封包上述導線架之墊片上所搭載之半導體元件而成者。以下使用圖式對本發明之半導體裝置進行說明。再者,本發明之半導體裝置並非僅限於圖1之構成。
如圖1之概略剖面圖所示般,半導體裝置10具有例如藉由晶粒接合材硬化物16而搭載於導線架12之墊片14上之半導體元件18。半導體元件18之內部形成有多層積體電路,且於表面形成有用以電路保護之鈍化膜24,甚至形成有緩衝層膜26。於半導體元件18表層形成有用以連接焊線22之開口部,並於其底部露出焊墊20。將半導體元件18經由晶粒接合材硬化物16搭載於導線架12之墊片14部後,為電性連接導線架12與半導體元件18而鋪設有焊線22,最後藉由封包材硬化物28而封包,形成半導體裝置10。
如此構成之半導體裝置10中,晶粒接合材硬化物16與墊片14、或半導體元件18之背面接觸。又,緩衝層膜26與封包材硬化物28、或鈍化膜24等連接。又,封包材硬化物28與緩衝層膜26、鈍化膜24、半導體元件18、或導線架12等連接。於本發明中,因晶粒接合材硬化物16、緩衝層膜26及封包材硬化物28之彈性率在特定範圍內,而可緩和因構件間熱膨脹係數不一致所產生之應力,故可提供即使在使用無鉛焊錫之安裝中,亦具有高可靠性之半導體裝置。
就如此構成緩衝層膜26、晶粒接合材硬化物16、及封包材硬化物28之樹脂組成物加以詳細說明。
作為本發明中所使用之緩衝層用樹脂組成物,若自該樹脂組成物而得之硬化物於25℃時之彈性率為0.5 GPa以上、2.0 GPa以下,則並無特別限定。上述硬化物之彈性率,可藉由以JIS K-6760為基準測量拉伸強度,並根據所得之SS曲線算出25℃時之楊氏彈性率而獲得。
緩衝層用樹脂組成物包含例如具有環氧基之環狀烯烴系樹脂、光酸發生劑,進而根據必要而包含溶劑、增感劑、酸捕捉劑、勻化劑、抗氧化劑、難燃劑、可塑劑、矽烷偶合劑等。
至於上述緩衝層用樹脂組成物中所使用之具有環氧基之環狀烯烴系樹脂,可列舉包含來自以通式(1)所表示之降烯型單體的構成單位之加成(共)聚合物等。
(通式(1)中,X各自獨立為O、CH2
、(CH2
)2
中任一者,且多數個存在之X既可相同亦可不同。n為0~5之整數。R1~R4可分別為包含氫、烷基、烯基、炔基、烯丙基、芳基、芳烷基、或者酯基之有機基,包含酮基之有機基,包含醚基之有機基,包含環氧基之有機基中任一者。R1~R4於多數個存在之構成單位相互間不同亦可,全構成單位之R1~R4中,至少一個以上為包含環氧基之有機基。)
至於包含環氧基之有機基,較佳的是縮水甘油醚基。
上述(共)聚合物中,以通式(1)所表示之結構單位之含有率,可根據藉由曝光進行交聯而獲得可耐抗顯像液的交聯密度之觀點而進行決定。通常以通式(1)所表示之結構單位之含有率,於聚合物中使用5 mol%以上、95 mol%以下,較佳的是20 mol%以上、80 mol%以下,進而較佳的是30 mol%以上、70 mol%以下之比例。
作為上述緩衝層用樹脂組成物中所使用之光酸發生劑,可使用眾所周知之化合物。光酸發生劑進行環氧基之交聯,並可藉由其後之硬化而提高與基板之密著性。
較佳之光酸發生劑為鎓鹽、鹵素化合物、硫酸鹽或其混合物。例如作為鎓鹽之陽離子側,可列舉重氮鎓、銨、錪、鋶、鏻、砷(arsonium)、氧鎓陽離子等,相對於該等之平衡陰離子(counter anion)並非僅限於可與上述鎓陽離子製作鹽之化合物。至於平衡陰離子之示例,並非僅限於硼酸、砷酸、磷酸、銻酸、硫酸鹽、羧酸及其氯化物。
至於作為光酸發生劑之鎓鹽,可列舉三苯基四氟硼酸鋶、三苯基六氟硼酸鋶、三苯基四氟砷酸鋶、三苯基四氣磷酸鋶、三苯基四氟硫酸鋶、4-硫代苯氧基二苯基四氟硼酸鋶、4-硫代苯氧基二苯基四氟銻酸鋶、4-硫代苯氧基二苯基四氟砷酸鋶、4-硫代苯氧基二苯基四氟磷酸鋶、4-硫代苯氧基二苯基四氟磺酸鋶、4-第三丁基苯基二苯基四氟硼酸鋶、4-第三丁基苯基二苯鋶四氟鋶、4-第三丁基苯基二苯基四氟銻酸鋶、4-第三丁基苯基二苯基四氟磷酸鋶、4-第三丁基苯基二苯基四氟磺酸鋶、三(4-甲基苯基)三氟硼酸鋶、三(4-甲基苯基)四氟硼酸鋶、三(4-甲基苯基)六氟砷酸鋶、三(4-甲基苯基)六氟磷酸鋶、三(4-甲基苯基)六氟磺酸鋶、三(4-甲氧基苯基)四氟硼酸鋶、三(4-甲基苯基)六氟銻酸鋶、三(4-甲基苯基)六氟磷酸鋶、三(4-甲基苯基)三氟膦酸鋶、三苯基四氟硼酸錪、三苯基六氟銻酸錪、三苯基六氟砷酸錪、三苯基六氟磷酸錪、三苯基三氟磺酸錪、3,3-二硝基二苯基四氟硼酸錪、3,3-二硝基二苯基六氟銻酸錪、3,3-二硝基二苯基六氟砷酸錪、3,3-二硝基二苯基三氟磺酸錪、4,4-二硝基二苯基四氟硼酸錪、4,4-二硝基二苯基六氟銻酸錪、4,4-二硝基二苯基六氟砷酸錪、4,4-二硝基二苯基四氟磺酸錪等,該等既可單獨使用亦可混合使用。
至於作為光酸發生劑之鹵素化合物,可列舉2,4,6-三(三氯甲基)三、2-烯丙基-4,6-雙(三氯甲基)三、α,β,α-三溴甲基苯基碸、α,α-2,3,5,6-六氯二甲苯、2,2-雙(3,5-二溴-4-羥基苯基)-1,1,1,3,3,3-六氟二甲苯、1,1,1-三(3,5-二溴-4-羥基苯基)乙烷及彼等之混合物。
至於作為光酸發生劑之硫酸鹽,可列舉2-硝基苄基甲苯磺酸鹽、2,6-二硝基苄基甲苯磺酸鹽、2,4-二硝基苄基甲苯磺酸鹽、2-硝基苄基甲基磷酸鹽、2-硝基苄基乙酸鹽、9,10-二甲氧基蒽-2-磺酸鹽、1,2,3-三(甲烷磺醯基氧基)苯、1,2,3-三(乙烷硫基氧基)苯、1,2,3-三(丙烷硫基羧基)苯等。
至於光酸發生劑,較佳的是列舉4,4’-二-第三丁基苯基三氟甲烷磺酸錪、4,4’,4"-三(第三丁基苯基)三氟甲烷磺酸鋶、二苯基四(戊氟苯基)硼酸錪、三苯基鋶二苯基錪四(戊氟苯基)硼酸鹽、4,4’-二-第三丁基苯基四(戊氟苯基)硼酸錪、三(第三丁基苯基)四(戊氟苯基)硼酸鋶、(4-甲基苯基-4-(1-甲基乙基)苯基四(戊氟苯基)硼酸錪及彼等之混合物。
本發明中所使用之緩衝層用樹脂組成物中之光酸發生劑之添加比例,考慮到硬化物之交聯密度或與基板之密著性等觀點,相對於100重量份環狀烯烴系樹脂,為0.1重量份以上、100重量份以下,更佳的是0.1重量份以上、10重量份以下。
本發明中所使用之緩衝層用樹脂組成物中,根據必要而為提高感光特性,可使用增感劑。
增感劑可擴大可使光酸發生劑活性化之波長範圍,且可於並不直接影響聚合物交聯反應之範圍內進行添加。作為最佳增感劑,係於所使用之光源附近具有最大吸光係數,且可使所吸收之能量有效轉移至光酸發生劑之化合物。
至於光酸發生劑之增感劑,可列舉蒽、派聯(pylen)、聚對二甲苯等環芳香族。作為蒽骨架,例如可列舉2-異丙基-9H-硫雜蒽-9-烯、4-異丙基-9H-硫雜蒽-9-酮、1-氯-4-丙氧基硫雜蒽、啡噻及彼等之混合物。本發明所使用之緩衝層用樹脂組成物中之光酸發生劑之添加比例,考慮到可擴大可使光酸發生劑活性化之波長範圍,且不直接影響聚合物之交聯反應之觀點,相對於100重量份環狀烯烴系樹脂,為0.1重量份以上、10重量份以下,更佳的是0.2重量份以上、5重量份以下。於光源為g線(436 nm)以及i線(365 nm)等長波長之情形時,增感劑可有效使光酸發生劑活性化。
本發明所使用之緩衝層用樹脂組成物中,根據必要可藉由添加少量酸捕捉劑而提高解析度。酸捕捉劑於光化學反應之間吸收擴散至未曝光部之酸。至於酸捕捉劑,係吡啶、二甲基吡啶、啡噻、三-正丙胺與三乙胺等第二、第三胺,但並非限定於此。酸捕捉劑之添加比例,考慮到吸收擴散至未曝光部之酸,且提高解析度之觀點,相對於100重量份環狀烯烴系樹脂為0.01重量份以上、0.5重量份以下。
本發明中所使用之緩衝層樹脂組成物中,根據必要可進一步添加勻化劑、抗氧化劑、阻燃劑、可塑劑、矽烷偶合劑等添加劑。
本發明中所使用之緩衝層用樹脂組成物,係使該等成分溶解於溶劑並製成清漆狀而使用。至於溶劑,存在非反應性溶劑以及反應性溶劑,非反應性溶劑作為聚合物或添加物之載體而發揮作用,且可於塗佈或硬化過程中除去。反應性溶劑包含與添加至樹脂組成物中之硬化劑具有相溶性之反應基。
非反應性溶劑為烴或芳香族。可列舉戊烷、己烷、庚烷、環己烷或十氫萘等烷烴或環烷烴之烴溶劑,但並非限定於此。芳香族溶劑為苯、甲苯、二甲苯或均三甲苯等。二乙醚、四氫呋喃、苯甲醚、乙酸酯、酯、內酯、酮或醯胺亦有用。
至於反應性溶劑,既可單獨亦可混合使用氧化環己烯或氧化α-蒎烯等環醚化合物、[亞甲基雙(4,1-伸苯基氧亞甲基)]雙環氧乙烷等芳香族環醚、1,4-環己烷二甲醇二乙烯基醚等環脂肪族乙烯醚化合物、雙(4-乙烯基苯基)甲烷等芳香族。較佳的是均三甲苯或十氫萘,且該等最適合於矽、矽氧化物、矽氮化物、矽氧氮化物等基板上塗佈樹脂。
本發明中所使用之緩衝層用樹脂組成物,較佳的是包含具有環氧基之環狀烯烴系樹脂、光酸發生劑、增感劑、酸捕捉劑。
具體而言,將具有環氧基之環狀烯烴系樹脂設為100重量份之情形時,
光酸發生劑之含量為0.1重量份以上、100重量份以下,較佳的是0.1重量份以上、10重量份以下,增感劑之含量為0.1重量份以上、10重量份以下,較佳的是0.2重量份以上、5重量份以下,酸捕捉劑之含量為0.01重量份以上、0.5重量份以下。該等數值範圍可進行適當組合。
緩衝層用樹脂組成物藉由上述之組成,可獲得25℃時之彈性率為0.5 GPa以上、2.0 GPa以下之硬化物。
本發明中所使用之緩衝層用樹脂組成物之樹脂固形分為5重量%以上、60重量%以下。進而較佳的是30重量%以上、55重量%以下,尤佳的是35重量%以上、45重量%以下。溶液黏度為10 cP以上、25,000 cP以下,較佳的是100 cP以上、3,000 cP以下。
本發明中所使用之緩衝層用樹脂組成物之製造方法,並無特別限定,可藉由單純地混合具有環氧基之環狀烯烴系樹脂以及光酸發生劑、以及根據必要之溶劑、增感劑、酸捕捉劑、勻化劑、抗氧化劑、難燃劑、可塑劑、矽烷偶合劑等而獲得。
為將本發明中所使用之緩衝層用樹脂組成物之硬化物於25℃時之彈性率設為0.5 GPa以上、2.0 GPa以下,而期望使用聚降烯。
本發明中所使用之晶粒接合用樹脂組成物,其硬化物於260℃時之彈性率為1 MPa以上、120 MPa以下。至於晶粒接合用樹脂組成物之形態並非特別限定者,例如可列舉樹脂糊或者樹脂膜等。
可用作本發明之晶粒接合用樹脂組成物之樹脂糊,其特徵在於,以熱硬化性樹脂以及填充材作為主成分,其硬化物於260℃時之彈性率為1 MPa以上、120 MPa以下。硬化物之彈性率,可藉由使用動態黏彈性測量裝置,於溫度範圍:-100℃~330℃、升溫速度:5℃/分、頻率:10 Hz之條件下進行測量,算出260℃時之儲存彈性率而獲得。
上述樹脂糊包含熱硬化性樹脂、硬化劑、硬化促進劑等而成,並非特別限定者,但因其係形成糊之材料,故而期望於室溫下為液狀。
作為上述樹脂糊中所使用之熱硬化性樹脂之例,可列舉液狀氰酸酯樹脂、液狀環氧樹脂、各種丙烯酸樹脂、馬來醯亞胺樹脂、具有芳基之三芳基異氰尿酸酯等具有自由基聚合性官能基之化合物等,該等可使用任一種或併用多數種。至於液狀環氧樹脂,例如可列舉雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚E型環氧樹脂、脂環式環氧樹脂、脂肪族環氧樹脂、縮水甘油胺型液狀環氧樹脂等。
本發明中,作為樹脂糊中所使用之熱硬化性樹脂,亦可於並不引起特性下降之程度,混合使用室溫下為固體之熱硬化性樹脂。至於可併用且室溫下為固體之熱硬化性樹脂之例,並無特別限制,例如環氧樹脂可列舉雙酚A、雙酚F、苯酚酚醛清漆、藉由甲酚酚醛清漆類與表氯醇之反應而獲得之聚縮水甘油醚、聯苯型環氧樹脂、芪型環氧樹脂、對苯二酚型環氧樹脂、三酚甲烷型環氧樹脂、苯酚芳烷基型(包含伸苯基、聯伸苯基骨架)環氧樹脂、包含萘骨架之環氧樹脂、二環戊二烯型環氧樹脂等。又,亦可使用正丁酯縮水甘油醚、柯赫酸縮水甘油酯、氧化苯乙烯、乙基己基縮水甘油醚、苯基縮水甘油醚、甲苯基縮水甘油醚、丁基苯基縮水甘油醚等單環氧樹脂。又,馬來醯亞胺樹脂中,例如可列舉N,N’-(4,4’-二苯基甲烷)雙馬來醯亞胺、雙(3-乙基-5-甲基-4-馬來醯亞胺苯基)甲烷、2,2-雙[4-(4-馬來醯亞胺苯氧基)苯基]丙烷等雙馬來醯亞胺樹脂。
至於使用氰酸酯樹脂作為樹脂糊中所使用之熱硬化性樹脂之情形時的硬化觸媒,例如可列舉乙醯丙酮酸銅、乙醯丙酮酸鋅等金屬錯合物。至於使用環氧樹脂作為熱硬化性樹脂之情形時之硬化劑,例如列舉苯酚樹脂、脂肪族胺、芳香族胺、二氰基二醯胺基、二碳酸二醯肼化合物、碳酸酐等作為例示,至於使用具有自由基聚合性官能基之化合物作為熱硬化性樹脂之情形時之引發劑,若為通常自由基聚合中所使用之觸媒,則並無特別限定,例如可列舉有機過氧化物等熱自由基聚合引發劑。
至於使用環氧樹脂作為樹脂糊中所使用之熱硬化性樹脂之情形時之硬化促進劑兼硬化劑,例如有各種咪唑化合物,作為其例,有2-甲基咪唑、2-乙基咪唑、2-苯基-4-甲基-5-羥基甲基咪唑、2-C1 1
H2 3
-咪唑等通常咪唑、加成三或異三聚氰酸之2,4-二胺基-6-{2-甲基咪唑-(1)}-乙基-S-三、或其異氰酸酯加成物等,該等可使用一種或併用多數種。
可用於樹脂糊之填充材,係有無機填充材以及有機填充材。作為無機填充材,例如有金粉、銀粉、銅粉、鋁粉等金屬粉,或熔融二氧化矽、結晶二氧化矽、氮化矽、氧化鋁、氮化鋁、滑石等。作為有機填充材,例如有矽酮樹脂、聚四氟乙烯等氟樹脂,聚甲基丙烯酸甲酯等丙烯樹脂,苯代三聚氰胺或三聚氰胺與甲醛之交聯物等。其中,金屬粉主要用以賦予導電性或熱傳導性,考慮到粒徑或形狀等種類較多且獲取容易之觀點,較佳的是銀粉。
樹脂糊中所使用之填充材,較佳的是鹵素離子、鹼性金屬離子等離子性雜質之含量為10 ppm以下。又,至於形狀可使用片狀、鱗片狀、樹枝狀或球狀等。根據必要樹脂糊之黏度,所使用之粒徑不同,但通常較佳的是平均粒徑為0.3 μ m以上、20 μ m以下,最大粒徑為50 μ m左右以下者。若平均粒徑為上述範圍,則可抑制黏度上升、或因塗佈或者硬化時樹脂分流出而產生之滲出。又,若最大粒徑為上述範圍內,則塗佈糊時,可防止因阻塞針之出口而無法連續使用之情形。又,亦可混合使用較粗填充材與較細填充材,關於種類、形狀,亦可適當混合各種填充材。
為賦予必要特性,例如亦可添加粒徑為1 nm以上100 nm以下左右之奈米填充材、二氧化矽與丙烯酸之複合材、於有機填充材之表面實施金屬塗佈之有機與無機複合填充材等,以作為樹脂糊中所使用之填充材。
再者,樹脂糊中所使用之填充材,亦可使用將表面預先以烷氧基矽烷、烯丙氧基矽烷、矽氮烷、有機胺基矽烷等矽烷偶合劑等進行處理者。
本發明中可使用之晶粒接合用樹脂糊,根據必要於無損滿足用途之特性之範圍內,可使用矽烷偶合劑、鈦酸酯偶合劑、低應力化劑、顏料、染料、消泡劑、界面活性劑、溶劑等添加劑。
本發明中所使用之晶粒接合用樹脂糊,較佳的是包含環氧樹脂、硬化劑、無機填充材。
具體而言,相對於1當量硬化劑,含有1當量以上、10當量以下環氧樹脂,較佳的是1當量以上、6當量以下。進而,無機填充材之含量,於該樹脂糊中為70重量%以上、90重量%以下,較佳的是70重量%以上、85重量%以下。又,該等數值範圍可進行適當組合。
晶粒接合用樹脂糊,藉由如上所述之組成,可獲得260℃時之彈性率為1 MPa以上、120 MPa以下之硬化物。
至於本發明中所使用之晶粒接合用樹脂糊之製造方法,例如,存有預先混合各成分,使用三滾筒混合機、濕式珠磨機等進行混煉而獲得樹脂糊後,於真空下進行脫泡等。
為將本發明中可使用之晶粒接合用樹脂糊之硬化物於260℃時之彈性率設為1 MPa以上、120 MPa以下,進而較佳的是使用,例如作為熱硬化性樹脂之氫化雙酚A型環氧樹脂、1,4-環己烷二甲醇二縮水甘油醚、1,4-丁二醇二縮水甘油醚、1,6-己二醇二縮水甘油醚等液狀環氧樹脂;二環戊二烯型環氧樹脂等固形環氧樹脂;分子內具有可聚合自由基之官能基(丙烯醯基、甲基丙烯醯基、丙烯醯胺基、馬來醯亞胺基、乙烯酯基、乙烯醚基等)之聚丁二烯、聚異戊二烯、聚伸烷基氧化物、脂肪族聚酯、或聚降烯等化合物等。
藉此,於樹脂骨架中可大量導入脂肪鏈(烴鏈)或者脂環骨架等不包含芳香環之骨架,可獲得具有上述範圍之彈性率之硬化物。又,使用羧基末端丁二烯-丙烯腈共聚物、鄰苯二甲酸酯等低應力化劑亦有效。
可用作本發明之晶粒接合用樹脂組成物之樹脂膜,其特徵在於,將熱可塑性樹脂以及硬化性樹脂作為主成分,且其硬化物於260℃時之彈性率為1 MPa以上、120 MPa以下。硬化物之彈性率,可藉由與上述樹脂糊相同之方法進行測量。
至於上述晶粒接合用樹脂膜中所使用之熱可塑性樹脂,可列舉聚醯亞胺樹脂、聚醚醯亞胺樹脂等聚醯亞胺系樹脂,聚醯胺樹脂、聚醯胺醯亞胺樹脂等聚醯胺系樹脂,丙烯酸系樹脂等。該等之中,較佳的是聚醯亞胺樹脂。藉此,可同時實現初期密著性、耐熱性。此處所謂初期密著性,係表示以晶粒接合用樹脂膜接著半導體元件與支持構件時之初期階段之密著性,即硬化處理晶粒接合用樹脂膜前之密著性。
上述聚醯亞胺樹脂係藉由四羧酸二酐、以通式(2)所表示之二胺基聚矽氧烷、芳香族或脂肪族二胺之聚縮合反應而獲得者。
(通式(2)中,R1、R2各自獨立表示碳數為1~4之脂肪族烴基或者芳香族烴基。R3、R4、R5、以及R6各自獨立表示碳數為1~4之脂肪族烴基或者芳香族烴基。)
至於用作上述聚醯亞胺樹脂之原料之四羧酸二酐,可列舉3,3’,4,4’-聯苯四羧酸二酐、3,3’,4,4’-二苯甲酮四羧酸二酐、均苯四甲酸二酐、4,4’-氧基二苯二甲酸二酐、乙二醇雙偏苯三甲酸二酐等。其中,黏著性較佳的是4,4’-氧基二苯二甲酸二酐。上述四羧酸二酐既可單獨使用,亦可組合兩種以上使用。
至於作為上述聚醯亞胺樹脂之原料而使用之以式(2)所表示之二胺基聚烯氧烷,可列舉ω,ω’-雙(2-胺基乙基)聚二甲基矽氧烷、ω,ω’-雙(4-胺基苯基)聚二甲基矽氧烷、α,ω-雙(3-胺基丙基)聚二甲基矽氧烷等,尤其是使用式(2)中k值為1~25(較佳的是1~10)者,於接著性方面較佳。又,為提高黏著性,根據必要亦可組合兩種以上使用。
至於作為上述聚醯亞胺樹脂之原料而使用之二胺,可列舉3,3’-二甲基-4,4’-二胺基聯苯、4,6-二甲基-間-伸苯基二胺、2,5-二甲基-對-伸苯基二胺、2,4-二胺基均三甲苯、4,4’-亞甲基二-鄰-甲苯胺、4,4’-亞甲基二胺-2,6-二甲苯胺、4,4’-亞甲基-2,6-二乙基苯胺、2,4-甲苯二胺、間-伸苯基二胺、對-伸苯基二胺、4,4’-二胺基二苯基丙烷、3,3’-二胺基二苯基丙烷、4,4’-二胺基二苯基乙烷、3,3’-二胺基二苯基乙烷、4,4’-二胺基二苯基甲烷、3,3’-二胺基二苯基甲烷、4,4’-二胺基二苯硫、3,3’-二胺基二苯硫、4,4’-二胺基二苯碸、3,3’-二胺基二苯碸、4,4’-二胺基二苯醚、3,3’-二胺二苯醚、聯苯胺、3,3’-二胺基聯苯、3,3’-二甲基-4,4’-二胺基聯苯、3,3’-二甲氧基聯苯胺、雙(對-胺基環己基)甲烷、雙(對-β-胺基-第三-丁基苯基)醚、雙(對-β-甲基-δ-胺基戊基)苯、對-雙(2-甲基-4-胺基戊基)苯、1,5-二胺基萘、2,6-二胺基萘、2,4-雙(β-胺基-第三-丁基)甲苯、2,4-二胺基甲苯、間-二甲苯-2,5-二胺、對-二甲苯-2,5-二胺、間-苯二甲基二胺、對-苯二甲基二胺、2,6-二胺基吡啶、2,5-二胺基吡啶、2,5-二胺基-1,3,4-二唑、1,4-二胺基環己烷、哌、亞甲基二胺、伸乙基二胺、四亞甲基二胺、五亞甲基二胺、六亞甲基二胺、2,5-二甲基六亞甲基二胺、3-甲氧基六亞甲基二胺、七亞甲基二胺、2,5-二甲基七亞甲基二胺、3-甲基七亞甲基二胺、4,4-二甲基七亞甲基二胺、八亞甲基二胺、九亞甲基二胺、5-甲基九亞甲基二胺、十亞甲基二胺、1,3-雙(3-胺基苯氧基)苯、2,2-雙[4-(4-胺基苯氧基)苯基]丙烷、1,3-雙(4-胺基苯氧基)苯、雙-4-(4-胺基苯氧基)苯基碸、雙-4-(3-胺基苯氧基)苯基碸等。其中,關於黏著性較佳的是2,2-雙[4-(4-胺基苯氧基)苯基]丙烷、1,3-雙(3-胺基苯氧基)苯。上述二胺既可單獨使用,亦可組合兩種以上使用。
用以獲得上述聚醯亞胺樹脂之聚縮合反應中之酸成分與胺成分之當量比,係決定所獲得之聚醯亞胺樹脂之分子量之重要因素。又,眾所周知所獲得之聚合物之分子量與物性,尤其是與數平均分子量與機械性質間相關聯。數平均分子量越大機械特性越優良。故而,為獲得實用性良好之強度,必須為某種程度之高分子量。
本發明中,考慮到機械強度以及耐熱性雙方,較佳的是上述聚醯亞胺樹脂之酸成分與胺成分之當量比r於0.900≦r≦1.06,甚至是於0.975≦r≦1.025之範圍。其中,r=[全酸成分之當量數]/[全胺成分之當量數]。
若r為上述範圍,不會引起氣體產生或發泡等不良,可獲得良好接著力。又,為控制聚醯亞胺樹脂之分子量,而添加二羧酸酐或者單胺,若於上述酸/胺莫耳比r之範圍內,則並特別妨礙上述情況。
上述四羧酸二酐與上述二胺之反應係於非質子性極性溶劑中以眾所周知之方法進行。作為非質子性極性溶劑,可列舉N,N-二甲基甲醯胺(DMF)、N,N-二甲基乙醯胺(DMAC)、N-甲基-2-吡咯啶酮(NMP)、四氫呋喃(THF)、二甘二甲醚、環己酮、1,4-二烷(1,4-DO)等。非質子性極性溶劑既可僅使用一種,亦可混合兩種以上使用。
此時,亦可混合使用與上述非質子性極性溶劑有相溶性之非極性溶劑。可較佳地使用甲苯、二甲苯、石腦油溶劑等芳香族烴。混合溶劑中之非極性溶劑之比例,較佳的是30重量%以下。其原因在於,非極性溶劑超過30重量%之情形時,存在溶劑之溶解力下降且析出聚醯胺酸之顧慮。
上述芳香族四羧酸二酐與上述二胺之反應,期望將良好乾燥之二胺成分溶解於脫水精製之上述反應溶劑中,並於其中添加閉環率為98%、更佳的是99%以上之良好乾燥之四羧酸二酐而加速反應。
繼而將如上所述獲得之聚醯胺酸溶液於有機溶劑中加熱脫水,進行環化、醯亞胺化,而製成聚醯亞胺樹脂。因藉由醯亞胺化反應而產生之水妨礙閉環反應,故而使於系統中添加與水不相溶之有機溶劑,並使之共沸,使用迪恩-斯達克(Dean-Stark)管等裝置將其排出至系統外。至於與水不相溶之有機溶劑,眾所周知有二氯苯,但因作為電子設備用,存有混入氯成分之顧慮,故而較佳的是使用上述芳香族烴。又,作為醯亞胺化反應之觸媒,亦可使用乙酸酐、β-甲基吡啶、吡啶等化合物。
於本發明中,上述聚醯亞胺樹脂之醯亞胺化率越高越好。若醯亞胺化率較低,則使用時之熱引起醯亞胺化而產生水,並非較好,故而期望醯亞胺化率達到95%以上,較佳的是98%以上。
作為上述晶粒接合用樹脂膜中所使用之硬化性樹脂,可列舉熱硬化性樹脂、紫外線硬化性樹脂、電子射線硬化性樹脂等。再者,作為硬化性樹脂,亦可包含具有如下所述之硬化劑之功能者。
上述硬化性樹脂較佳的是包含熱硬化性樹脂。藉此,尤其可提高耐熱性(特別是260℃之耐回流焊性)。
作為上述熱硬化性樹脂,例如,可列舉苯酚酚醛清漆樹脂、甲酚酚醛清漆樹脂、雙酚A酚醛清漆樹脂等酚醛清漆型苯酚樹脂,可溶酚醛樹脂等苯酚樹脂,雙酚A環氧樹脂、雙酚F環氧樹脂等雙酚型環氧樹脂,酚醛清漆環氧樹脂、甲酚酚醛清漆環氧樹脂等酚醛清漆型環氧樹脂,聯苯型環氧樹脂、芪型環氧樹脂、三酚甲烷型環氧樹脂、烷基改性三酚甲烷型環氧樹脂、含有三核之環氧樹脂、二環戊二烯改性苯酚型環氧樹脂等環氧樹脂,Urea(尿素)樹脂、三聚氰胺樹脂等具有三環之樹脂,不飽和聚酯樹脂,雙馬來醯亞胺樹脂,聚胺基甲酸酯樹脂,鈦酸二烯丙酯樹脂,矽酮樹脂,具有苯幷 環之樹脂,氰酸酯樹脂等,該等既可單獨使用亦可混合使用。該等中尤佳的是環氧樹脂。藉此,可進而提高耐熱性以及密著性。
至於上述環氧樹脂,若為至少於1分子中具有2個環氧基,且與熱可塑性樹脂(此處為聚醯亞胺樹脂)具有相溶性者,則並無特別限制,較佳的是對合成聚醯亞胺樹脂時所使用之溶劑之溶解性良好者。作為例示,可列舉甲酚酚醛清漆型環氧化合物、苯酚酚醛清漆型環氧化合物、雙酚A型二縮水甘油醚、雙酚F型二縮水甘油醚、雙酚A-表氯醇型環氧化合物、二苯醚型環氧化合物、聯苯型環氧化合物、氫化雙酚A型環氧化合物等。
上述環氧樹脂之熔點並無特別限制,較佳的是50℃以上、150℃以下,尤佳的是60℃以上、140℃以下。若熔點於上述範圍內,則尤其可提高低溫接著性。
上述熔點,例如可使用示差掃描熱量計,以自常溫以5℃/分之升溫速度升溫之結晶熔解之吸熱峰值的頂點溫度進行評估。
上述熱硬化性樹脂之含量並無特別限定,相對於100重量份上述熱可塑性樹脂,較佳的是1重量份以上、100重量份以下,尤佳的是5重量份以上、50重量份以下。若含量於上述範圍內,則可提高樹脂膜之耐熱性以及韌性。
上述硬化性樹脂為環氧樹脂之情形時,較佳的是上述樹脂膜包含硬化劑(尤其包含苯酚系硬化劑)。
至於上述硬化劑,例如除二乙烯三胺(DETA)、三乙烯四胺(TETA)、間苯二甲胺(MXDA)等脂肪族聚胺,二胺二苯基甲烷(DDM)、間-伸苯基二胺(MPDA)、二胺基二苯碸(DDS)等芳香族聚胺外,亦可列舉包含雙氰胺(DICY)、有機酸二醯肼等之聚胺化合物等胺系硬化劑,六氫鄰苯二甲酸酐(HHPA)、甲基四氫鄰苯二甲酸酐(MTHPA)等脂環族酸酐(液狀酸酐),偏苯三酸酐(TMA)、均苯四甲酸酐(PMDA)、二苯甲酮四羧酸(BTDA)等芳香族酸酐等酸酐系硬化劑,苯酚樹脂等苯酚系硬化劑。該等之中,較佳的是苯酚系硬化劑,具體而言,可列舉雙(4-羥基-3,5-二甲基苯基)甲烷(通稱四甲基雙酚F)、4,4’-磺醯基雙酚、4,4’-異偏丙基雙酚(通稱雙酚A)、雙(4-羥基苯基)甲烷、雙(2-羥基苯基)甲烷、(2-羥基苯基)(4-羥基苯基)甲烷以及該等中之雙(4-羥基苯基)甲烷、雙(2-羥基苯基)甲烷、(2-羥基苯基)(4-羥基苯基)甲烷三種之混合物(例如,本州化學工業(股)製,雙酚F-D)等雙酚類,1,2-苯二醇、1,3-苯二醇、1,4-苯二醇等二羥基苯類,1,2,4-苯三醇等三羥基苯類、1,6-二羥基萘等二羥基萘類之各種異構物,2,2’-聯苯酚、4,4’-聯苯酚等聯苯酚類各種異構物等化合物。
上述環氧樹脂之硬化劑(尤其是苯酚系硬化劑)之含量,並無特別限定,相對於1當量上述環氧樹脂,較佳的是0.5當量以上、1.5當量以下,尤佳的是0.7當量以上、1.3當量以下。若含量於上述範圍內,可使耐熱性提高,且可抑制保存性之下降。
上述晶粒接合用樹脂膜並無特別限定,進而較佳的是包含矽烷偶合劑。藉此,可進一步提高密著性。
上述矽烷偶合劑,較佳的是與熱可塑性樹脂(此處為聚醯亞胺樹脂)或環氧化合物之相溶性、以及對合成聚醯亞胺樹脂時所使用之溶劑之溶解性良好者。作為例示,可列舉乙烯基三氯矽烷、乙烯基三乙氧基矽烷、γ-甲基丙烯醯氧基丙基三甲氧基矽烷、γ-縮水甘油氧基丙基三甲氧基矽烷、γ-巰基丙基三甲氧基矽烷、N-β(胺基乙基)γ-胺基丙基三甲氧基矽烷、N-β(胺基乙基)γ-胺基丙基甲基二甲氧基矽烷、γ-胺基丙基三乙氧基矽烷、N-苯基-γ-胺基丙基三甲氧基矽烷等,N-苯基-γ-胺基丙基三甲氧基矽烷於接著性方面較佳。
上述矽烷偶合劑之含量,相對於100重量份上述熱可塑性樹脂,較佳的是0.01重量份以上、20重量份以下,更佳的是1重量份以上、10重量份以下。若含量於上述範圍內,則可獲得良好接著特性。
上述晶粒接合用樹脂膜並無特別限定,進而較佳的是包含填充材。藉此,可進一步提高耐熱性。
至於上述填充材,例如可列舉銀、氧化鈦、二氧化矽、雲母等無機填充材,矽酮橡膠、聚醯亞胺等微粒子之有機填充材。該等之中,較佳的是無機填充材,尤佳的是二氧化矽。藉此,可進一步使耐熱性提高。
上述填充材(尤其為無機填充材)之含量並無特別限定,相對於100重量份上述熱可塑性樹脂,較佳的是1重量份以上、100重量份以下,尤佳的是10重量份以上、50重量份以下。若含量於上述範圍內,可使耐熱性及密著性提高。
上述填充劑(尤其為無機填充劑)之平均粒徑並無特別限制,較佳的是平均粒徑0.1 μ m以上、25 μ m以下,尤佳的是0.5 μ m以上、20 μ m以下。若平均粒徑於上述範圍內,則可使耐熱性提高,且可抑制晶粒接合用樹脂膜接著性之下降。
晶粒接合用樹脂膜較佳的是包含熱可塑性樹脂、硬化性樹脂、矽烷偶合劑,根據必要包含填充材亦較佳。
具體而言,於設為100重量份熱可塑性樹脂之情形時,硬化性樹脂之含量為1重量份以上、100重量份以下,較佳的是5重量份以上、50重量份以下,矽烷偶合劑之含量為0.01重量份以上、20重量份以下,較佳的是1重量份以上、10重量份以下。進而根據必要,相對於100重量份上述熱可塑性樹脂,含有1重量份以上、100重量份以下填充材(尤其為無機填充材),較佳的是10重量份以上、50重量份以下。該等數值範圍可進行適當組合。
晶粒接合用樹脂糊藉由如上所述之組成,可獲得25℃時之彈性率為1 MPa以上、120 MPa以下之硬化物。
本發明中所使用之晶粒接合用樹脂膜,例如將上述熱可塑性樹脂與上述硬化性樹脂作為主成分,將根據必要適當組合有上述各成分之樹脂組成物溶解於甲基乙基酮、丙酮、甲苯、二甲基甲醛、二甲基乙醯胺、N-甲基-2-吡咯啶酮等溶劑中,使之為清漆狀態後,使用刮刀式塗佈機、模組塗佈機、凹板印刷塗佈機等,將其塗佈於脫模片上,使之乾燥後,可藉由除去脫模片而獲得。
上述晶粒接合用樹脂膜厚度並無特別限定,較佳的是3 μ m以上、100 μ m以下,尤佳的是5 μ m以上、75 μ m以下。若厚度於上述範圍內,則尤其可易於控制厚度精度。
為將本發明中可使用之晶粒接合用樹脂膜之硬化物於260℃時之彈性率設為1 MPa以上、120 MPa以下,期望併用熱時低彈性及密著性良好之上述熱可塑性樹脂(尤其為聚醯亞胺樹脂)以及耐熱性及密著性良好之上述熱硬化性樹脂(尤其為環氧樹脂)。根據所使用之熱可塑性樹脂及熱硬化性樹脂之種類而適當調整併用比率,藉此可不降低耐熱性、密著性而實現熱時低彈性造成之應力降低。
本發明中所使用之封包用樹脂組成物,將環氧樹脂、苯酚樹脂硬化劑、硬化促進劑、無機填充材作為主成分。進而,其特徵在於,自該樹脂組成物獲得之硬化物於260℃時之彈性率為400 MPa以上、1200 MPa以下,硬化物於260℃時之熱膨脹係數為20 ppm以上、50 ppm以下,且上述硬化物於260℃時之彈性率與該硬化物於260℃時之熱膨脹係數之積為8,000以上、45,000以下。
硬化物之彈性率,可作為根據JIS K 6911進行測量之於260℃時之彎曲彈性率而獲得。另一方面,硬化物之熱膨脹係數,可根據TMA(Thermo Mechanical Analysys)以5℃/分之升溫速度進行測量,並根據所獲得之TMA曲線於260℃時之熱膨脹係數而獲得。
本發明之封包用樹脂組成物中所使用之環氧樹脂,係指具有環氧基之單體、寡聚物、聚合物全體,例如,可列舉雙酚型環氧樹脂、聯苯型環氧樹脂、芪型環氧樹脂、對苯二酚型環氧樹脂、鄰苯甲酚酚醛清漆型環氧樹脂、三酚甲烷型環氧樹脂、苯酚芳烷基型(包含伸苯基、聯伸苯基骨架)環氧樹脂、包含萘骨架之環氧樹脂、二環戊二烯型環氧樹脂等,該等既可單獨使用亦可混合使用。為實現熱時低彈性,較佳的是具有如二環戊二烯型環氧樹脂般柔軟結構之樹脂,如此之熱時低彈性樹脂同時具有熱時高熱膨脹,故而耐裂縫性降低。故而,亦必需要有填充材之增量引起之低熱膨脹化,環氧樹脂之低黏度化亦較為重要。藉此,為實現熱時低彈性以及熱時低熱膨脹,較佳的是使用聯苯型環氧樹脂、雙酚型環氧樹脂、苯酚芳烷基型環氧樹脂等熱時柔軟性與流動性之平衡性良好之環氧樹脂。又,並非單獨而是混合多數種環氧樹脂,亦可獲得柔軟性與流動性之平衡。
作為於本發明之封包用樹脂組成物中所使用之苯酚樹脂硬化劑,係指與上述環氧樹脂進行硬化反應而可形成交聯結構之至少具有2個以上苯酚性氫氧基之單體、寡聚物、聚合物全體,例如,可列舉苯酚酚醛清漆樹脂、甲酚酚醛清漆樹脂、苯酚芳烷基(包含伸苯基、聯伸苯基骨架)樹脂、萘酚芳烷基樹脂、三酚甲烷樹脂、二環戊二烯型苯酚樹脂等,該等既可單獨使用亦可混合使用。與環氧樹脂相同,為實現熱時低彈性且熱時低熱膨脹,較佳的是使用苯酚芳烷基樹脂、萘酚芳烷基樹脂等熱時柔軟性與流動性之平衡良好之苯酚樹脂。又,並非單獨而是混合多數種苯酚樹脂,亦可獲得柔軟性與流動性之平衡。
至於本發明之封包用樹脂組成物中所使用之全環氧樹脂之環氧基數與全苯酚樹脂之苯酚性氫氧基數之當量比,較佳的是0.5以上、2以下,尤佳的是0.7以上、1.5以下。若於上述範圍內,則可抑制耐濕性、硬化性等之降低。
作為本發明之封包用樹脂組成物中所使用之硬化促進劑,係指可作為上述環氧樹脂與苯酚樹脂之交聯反應之觸媒者,例如可列舉1,8-二氮雜雙環(5,4,0)十一碳烯-7、三丁基胺等胺化合物,三苯基膦、四苯基鏻.四苯基硼酸鹽等有機磷系化合物,2-甲基咪唑等咪唑化合物等。然而,並非僅限於該等,既可單獨使用亦可併用。
本發明之封包用樹脂組成物中所使用之無機填充材之種類並無特別限制,可使用通常封包材料所使用者。例如熔融二氧化矽、結晶二氧化矽、2次凝集二氧化矽、氧化鋁、鈦白、氫氧化鋁、滑石、黏土、玻璃纖維等,該等既可單獨使用一種,亦可併用兩種以上。尤佳的是熔融二氧化矽。熔融二氧化矽可使用破碎狀或球狀,為提高添加量且抑制環氧樹脂組成物之熔融黏度上升,更佳的是主要使用球狀二氧化矽。進而為提高球狀二氧化矽之添加量,期望以更廣之方式調整球狀二氧化矽之粒度分佈。全無機填充材之添加量考慮到成形性、可靠性之平衡,較佳的是於全環氧樹脂組成物中添加80重量%以上、95重量%以下。若添加量於上述範圍內,可抑制因熱時之熱膨脹係數增大而造成之耐裂縫性降低、或流動性降低。根據填充材之增量,存有熱時之彈性率增大、熱時之熱膨脹係數減少之傾向,為實現熱時低彈性以及熱時低熱膨脹而提高耐裂縫性,重要的是取得填充材量、環氧樹脂、及苯酚樹脂硬化劑之組合之平衡。
用作本發明之封包用樹脂組成物之環氧樹脂組成物,除環氧樹脂、苯酚樹脂硬化劑、硬化促進劑、無機填充材外,根據必要亦可適當組合溴化環氧樹脂、氧化銻、磷化合物等難燃劑,氧化鉍水合物等無機離子交換體,γ-縮水甘油氧基丙基三甲氧基矽烷等偶合劑,碳黑、鐵丹等著色劑,矽酮油、矽酮橡膠等低應力成分,天然蠟、合成蠟、高級脂肪酸及其金屬鹽類或者石蠟等脫模劑,抗氧化劑等各種添加劑。進而,根據必要亦可預先以偶合劑或環氧樹脂或者苯酚樹脂處理無機填充材而使用,至於處理方法,則有使用溶劑進行混合後除去溶劑之方法、直接添加至無機填充材中使用混合機進行處理之方法等。該等添加劑中,矽酮油、矽酮橡膠等低應力成分,藉由添加而存有熱時之彈性率減少、熱時之熱膨脹係數增加之傾向,而藉由適當調整添加量,可提高裂縫性,此時,重要的是取得填充材量、環氧樹脂、及苯酚樹脂硬化劑之組合之平衡。
封包用樹脂組成物係以全環氧樹脂之環氧基數與全苯酚樹脂之苯酚性氫氧基數之當量比為0.5以上、2以下,較佳的是0.7以上、1.5以下之方式,包含環氧樹脂以及苯酚樹脂,且無機填充材於該樹脂組成物中之含量為80重量%以上、95重量%以下。該等數值範圍可進行適當組合。
封包用樹脂組成物,藉由如此之組成,可獲得於260℃時之彈性率為400 MPa以上、1200 MPa以下,於260℃時之熱膨脹係數為20 ppm以上、50 ppm以下,且於260℃時之彈性率與於260℃時之熱膨脹係數之積為8,000以上、45,000以下之硬化物。
本發明中,封包材硬化物之特性規定為“260℃時之彈性率與260℃時之熱膨脹係數之積”。此為基於以下理由。
矽晶片及導線架,於作為安裝溫度之260℃下熱膨脹係數小於封包材硬化物,故而由於安裝時之熱膨脹差而產生之應變,造成封包材硬化物與矽晶片或者導線架之間(以下亦稱為構件間)產生剝離之情形。本發明者根據FEM(finite element method)應力解析等,對剝離產生與封包材硬化物之特性之關係進行銳意研究,發現為抑制構件間產生剝離必須減小上述應變,即必須進行如下處理:i)減小構件間熱膨脹係數差,ii)減小各構件之彈性率。
本發明者進而銳意研究發現:僅上述i)、ii)中任一者為較小值、另一方為較大值之情形時,無法減小上述應變,其結果難以抑制剝離之產生。即,藉由同時減少上述i)、ii),可抑制構件間產生剝離。
以本發明之方式,若以“260℃時之彈性率與260℃時之熱膨脹係數之積”表示封包材硬化物之特性,可直接表現上述i)以及ii)、與構件間所產生之應變之關係。進而,藉由設為特定數值範圍,使矽晶片或者導線架、與封包材硬化物之熱膨脹係數差充分低,且使各構件之彈性率充分小,故而可充分減小所產生之應變,可有效抑制剝離之產生。再者,可進行封包成形等,要求封包材硬化物具有一定以上之機械強度,考慮該觀點,必須將機械強度與相關彈性率之下限值設為8,000以上。
為將封包用樹脂組成物之硬化物於260℃時之彈性率設為400 MPa以上、1200 MPa以下,260℃時之熱膨脹係數設為20 ppm以上、50ppm以下,且260℃時之彈性率與260℃時之熱膨脹係數之積設為8,000以上、45,000以下,尤佳的是使用聯苯型環氧樹脂、雙酚型環氧樹脂、苯酚芳烷基型環氧樹脂等熱時柔軟性與流動性之平衡良好之環氧樹脂、及/或苯酚芳烷基樹脂、萘酚芳烷基樹脂等熱時柔軟性與流動性之平衡良好之苯酚樹脂。進而,期望使用具有進而較廣之粒度分佈之球狀二氧化矽,相對於全環氧樹脂組成物中,使全無機填充材之添加量為80重量%以上、95重量%以下左右進行高填充。又,於不超過260℃時之線膨脹係數之上限值之範圍,添加矽酮油、矽酮橡膠等低應力成分,亦可降低260℃時之彈性率。
本發明之封包用樹脂組成物,可使用攪拌器常溫混合環氧樹脂、苯酚樹脂硬化劑、硬化促進劑、無機填充材、其他添加劑等,以滾筒、捏合機等擠壓機等混煉機進行熔融混煉,冷卻後進行粉碎而獲得。
以下對使用如此之樹脂組成物之半導體裝置之製造方法加以說明。再者,並非僅限於以下方法。
首先,製造表面以緩衝層膜26覆蓋之半導體元件18。
具體而言,首先將緩衝層用樹脂組成物塗佈於適當之支持體上,例如、矽晶圓、陶瓷、氧化鋁基板等。亦可於該等支持體之表面形成多數個焊墊20,並形成埋入焊墊20間之鈍化膜24。作為塗佈方法,可列舉使用有旋轉器之旋轉塗佈、使用有噴霧塗裝機之噴霧塗佈、浸漬、印刷、滾筒塗佈等。
繼而,於90~140℃下進行預烤使塗層乾燥後,藉由通常之曝光製程形成期望之圖案形狀。至於曝光製程中所照射之化學線,可使用X射線、電子射線、紫外線、可見光線等,較佳的是200~700 nm波長者。
進行曝光製程後,烘乾塗膜。藉由該製程,可提高環氧交聯之反應速度。烘乾條件為50~200℃。較佳的是80~150℃,更佳的是90~130℃。
繼而,藉由以顯像液溶解除去未照射部,可獲得具有焊墊20露出於底部之開口部且形成有凹凸圖案之緩衝層膜26。至於顯像液,為戊烷、己烷、庚烷或環己烷等烷烴或者環烷烴等烴、甲苯、均三甲苯、二甲苯等芳香族溶劑。又,可使用檸檬烯、二戊烯、蒎烯等萜類,環戊酮、環己酮、2-庚酮等酮類,可較佳地使用於彼等中添加適當量之界面活性劑之有機溶劑。
作為顯像方法,可使用噴射、槳、浸漬、超音波等方式。繼而,洗淨藉由顯像而形成之凹凸圖案。至於洗淨液,使用醇。繼而,於50~200℃下進行加熱處理,除去顯像液或洗淨液,進而完成環氧基之硬化而獲得耐熱性良好之最終圖案。繼而,藉由切割使形成有圖案之矽晶圓小片化,藉此可獲得表面以緩衝層膜26覆蓋之半導體元件18。緩衝層膜26之膜厚可設為5 μ m左右。
繼而,藉由晶粒接合用樹脂組成物將半導體元件18接著於導線架12之墊片14上。
首先,就使用樹脂糊作為晶粒接合用樹脂組成物之半導體元件18之接著方法加以說明。
具體而言,藉由使用多點針或一點針之點塗佈、使用一點針之線塗佈、網版印刷或衝壓等,將晶粒接合用樹脂糊塗佈於導線架12之墊片14上。繼而,將表面以緩衝層膜26覆蓋之半導體元件18安裝於墊片14上,並藉由眾所周知之方法,於烘箱、加熱板、線內恢復(inline cure)裝置等進行加熱而使樹脂糊硬化,接著半導體元件18。
另一方面,以如下方式進行使用有晶粒接合用樹脂膜之半導體元件18之接著方法。
具體而言,首先於導線架12之墊片14上,經由晶粒接合用樹脂膜載置半導體元件18。且於80~200℃溫度下壓著0.1~30秒。進而,於180℃之烘箱中加熱硬化60分鐘。
再者,本發明中,較佳的是將表面以緩衝層膜26覆蓋之半導體元件18搭載於導線架12之墊片14上,使之硬化後,對緩衝層膜26表面進行電漿處理。藉由進行電漿處理,使緩衝層膜26表面粗化,進而於含氧電漿之情形時,因具有親水性,故而存有與環氧系封包樹脂之密著性良好之優點。
繼而,藉由通常之方法,經由焊線22連接半導體元件18之焊墊20與導線架12。
然後,以封包材硬化物28封包半導體元件等電子零件,而製造半導體裝置10。具體而言,亦可使用封包用樹脂組成物,以轉注成形、加壓成形、注射成形等習知成形方法進行硬化成形。
藉由如此之製造方法而獲得之半導體裝置10中,緩衝層膜26於25℃時之彈性率為0.5 GPa以上、2.0 GPa以下,較佳的是0.5 GPa以上、1.0 GPa以下,晶粒接合材硬化物16於260℃時之彈性率為1 MPa以上、120 MPa以下,較佳的是5 MPa以上、100 MPa以下,封包材硬化物28於260℃時之彈性率為400 MPa以上、1200 MPa以下,較佳的是400 MPa以上、800 MPa以下,該硬化物於260℃時之熱膨脹係數為20 ppm以上、50 ppm以下,較佳的是20 ppm以上、40 ppm以下,且封包材硬化物28於260℃時之彈性率與封包材硬化物28於260℃時之熱膨脹係數之積為8,000以上、45,000以下。該等數值範圍可進行適當組合。
本發明之半導體裝置中,藉由緩衝層膜26、晶粒接合材硬化物16、以及封包材硬化物28之彈性率等為上述數值範圍,使用無鉛焊錫進行安裝時,可獲得良好耐回流焊性、高可靠性。
以下,就木發明以實施例加以具體說明,本發明並非僅限於該等實施例者。添加比例設為重量份。
以如下所述之方式製造癸基降烯/縮水甘油基甲基醚降烯=70/30共聚物之共聚物(A-1)。
於充分乾燥之燒瓶內,添加乙酸乙酯(917 g)、環己烷(917 g)、癸基降烯(192 g、0.82 mol)以及縮水甘油基甲基醚降烯(62 g、0.35 mol),並於乾燥氮氣填充下進行30分鐘脫氣。繼而將9.36 g(19.5 mmol)溶解於15 ml甲苯之鎳觸媒(雙甲苯雙全氟苯基鎳)添加至反應燒瓶中,於20℃下攪拌5小時,結束反應。接著,添加過乙酸溶液(975 mmol)攪拌18小時後,分離萃取水層與有機溶劑層。藉由蒸餾水洗淨.分離萃取有機溶劑層3次後,於有機溶劑層中加入甲醇後,不溶於甲醇之環狀烯烴系樹脂產生沈澱。濾集其沈澱物並進行水洗後,於真空下乾燥後,回收243 g(產率96%)環狀烯烴系樹脂。所獲得之環狀烯烴系樹脂之分子量,藉由GPC測量之結果,Mw=115,366、Mn=47,000、Mw/Mn=2.43。環狀烯烴系樹脂之組成根據H-NMR之測量結果,癸基降烯為70 mol%,環氧降烯為30 mol%。
將228 g合成環狀烯烴系樹脂溶解於342 g十氫萘後,加入4-甲基苯基-4-(1-甲基乙基)苯基四(戊氟苯基)硼酸錪(0.2757 g、2.71×10- 4
mol)、1-氯-4-丙氧基-9H-氧硫(0.826 g、2.71×10- 4
mol)、啡噻(0.054 g、2.71×10- 4
mol)、3,5-二第三丁基-4-羥基氫化肉桂酸酯(0.1378 g、2.60×10- 4
mol)並進行熔解後,以0.2 μ m之氟樹脂製過濾器進行過濾,獲得緩衝層用樹脂組成物(A-1)。
至於緩衝層用樹脂組成物(A-2),使用住友培科(股)製CRC-6061。
又,除將癸基降烯/縮水甘油基甲醚降烯之比率設為90/10以外,與(A-1)同樣製備,藉此獲得緩衝層用樹脂組成物(A-3)。
使用旋塗機將上述所得之緩衝層用樹脂組成物塗佈於矽晶圓上後,於加熱板上以120℃乾燥5分鐘,獲得膜厚約10 μ m之塗膜。硬化後將其切割為100 mm寬度,將長方形試驗片放入2%氟酸水溶液,溶解矽晶圓基板,洗淨、乾燥後獲得膜狀試驗片。根據JIS K-6760以TENSILON測量所獲得之試驗片之拉伸強度,並根據所獲得之SS曲線算出楊氏彈性率(25℃)。自上述緩衝層用樹脂組成物(A-1)而形成之硬化物(緩衝層膜)之彈性率為0.5 GPa,自上述緩衝層用樹脂組成物(A-2)而形成之緩衝層膜之彈性率為3.5 GPa,自上述緩衝層用樹脂組成物(A-3)而形成之緩衝層膜之彈性率為0.2 GPa。再者,緩衝層用樹脂組成物(A-3)於曝光上存在問題,故而無法實施作為組件之評估。
添加表1所示之組成之各成分與填充材,使用三滾筒混合機(滾筒間隔為50 μ m/30 μ m)於室溫下進行混煉5次而製造樹脂糊。將該樹脂糊於真空腔室內以2 mmHg進行30分鐘脫泡後,藉由以下方法評估熱時之彈性率。添加及評估結果如表1所示。添加單位設為重量份。
所使用之原料成分如下所示。
.雙酚A型環氧樹脂(油化殼牌環氧(股)製、Epikote 828、環氧當量190、以下稱為“BPA”。)
.甲苯基縮水甘油醚(日本化藥(股)製、SBT-H、環氧當量206、以下稱為“m,p-CGE”。)
.二氰基二醯胺(以下稱為“DDA”。)
.雙酚F型硬化劑(大日本油墨(股)製、DIC-BPF、環氧當量156、以下稱為“BPF”。)
.2-苯基-4-甲基-5-羥基甲基咪唑(四國化成工業(股)製、CUREZOL 2P4MHZ、以下稱為“咪唑”。)
.含有環氧之聚丁二烯(新日本石油(股)、E-1800、以下稱為“E/1800”。)
.銀粉:平均粒徑為3 μ m且最大粒徑為30 μ m之片狀銀粉
於特夫綸(註冊商標)薄片上將樹脂糊塗佈為寬度約4 mm、長度約50 mm、厚度200 μ m,於175℃之烘箱中硬化30分鐘後,將硬化物自特夫綸(註冊商標)薄片剝離,調整為20 mm之試驗長度。使用動態黏彈性測量裝置(製品名:DMS6100(精工電子(股)公司製))以5℃/分之升溫速度自-100℃升溫至330℃、頻率為10Hz之條件測量該試驗片,算出260℃時之彈性率。其結果如表1所示。
晶粒接合用樹脂膜樹脂清漆(B-3)之調整:使用87.0重量份聚醯亞胺樹脂PIA(將43.85 g(0.15莫耳)作為二胺成分之1,3-雙(3-胺基苯氧基)苯(三井化學(股)製APB)與125.55 g(0.15莫耳)α,ω-雙(3-胺基丙基)聚二甲基矽氧烷(平均分子量837)(扶桑化學(股)製G9)、以及93.07 g(0.30莫耳)作為酸成分之4,4’-氧基二苯二甲二酸酐(MANAC(股)製ODPA-M))進行合成而獲得之聚醯亞胺樹脂(以下稱為“PIA”)、Tg:70℃、重量平均分子量為30,000)作為熱可塑性樹脂,將8.7重量份環氧樹脂(EOCN-1020-80(正甲酚酚醛清漆型環氧樹脂)、環氧當量為200 g/eq、日本化藥(股)製、軟化點80℃、以下稱為“EOCN”。)以及4.3重量份矽烷偶合劑(KBM573、信越化學工業(股)製)作為硬化性樹脂溶解於N-甲基-2-吡咯啶酮(NMP)中,獲得樹脂固形分為43%之樹脂清漆(B-3)。
晶粒接合用樹脂膜樹脂清漆(B-4)之調整:將作為熱可塑性樹脂之聚醯亞胺樹脂PIA(將43.85g(0.15莫耳)作為二胺成分之1,3-雙(3-胺基苯氧基)苯(三井化學(股)製APB)與125.55 g(0.15莫耳)α,ω-雙(3-胺基丙基)聚二甲基矽氧烷(平均分子量837)(扶桑化學(股)製G9)、以及93.07 g(0.30莫耳)作為酸成分之4,4’-氧基二苯二甲二酸酐(MANAC(股)製ODPA-M)進行合成而獲得之聚醯亞胺樹脂、Tg:70℃、重量平均分子量為30,000)溶解於N-甲基-2-吡咯啶酮(NMP),獲得樹脂固形分為40%之樹脂清漆(B-4)。
使用刮刀式塗佈機將上述樹脂清漆塗佈於作為保護膜之聚對苯二甲酸乙二醇酯膜(三菱化學聚酯膜(股)公司製、產品編號MRX50、厚度50 μ m)上後,於180℃乾燥10分鐘,剝離作為保護膜之聚對苯二甲酸乙二醇酯膜,而獲得厚度為25 μ m之晶粒接合用樹脂膜。
.將上述晶粒接合用樹脂膜於180℃之烘箱中硬化60分鐘後,使用動態黏彈性測量裝置,於試驗長度為20 mm、以5℃/分之升溫速度自-100℃升溫至330℃、頻率10 Hz之條件下進行測量,算出260℃時之彈性率。添加及結果如表1所示。
將各成分於常溫下以攪拌器進行混合後,藉由雙輥混合機於70~120℃下進行混煉,冷卻後進行粉碎而獲得封包用環氧樹脂組成物。所使用之主要原料成分以及所獲得之樹脂組成物之特性評估方法如下所示。
.環氧樹脂1:具有聯伸苯基骨架之苯酚芳烷基型環氧樹脂(日本化藥(股)製、NC3000P、軟化點58℃、環氧當量274)
.環氧樹脂2:正甲酚酚醛清漆型環氧樹脂(住友化學(股)製、ESCN195LA、軟化點55℃、環氧當量199)
.環氧樹脂3:苯酚苯基芳烷基型環氧樹脂(三井化學(股)製、E-XLC-3L、軟化點53℃、羥基當量236)
.苯酚樹脂1:具有聯伸苯基骨架之苯酚芳烷基樹脂(明和化成(股)製、MEH-7851SS、軟化點65℃、羥基當量203)
.苯酚樹脂2:苯酚苯基芳烷基樹脂(三井化學(股)製、XLC-4L、軟化點65℃、羥基當量175℃)
.苯酚樹脂3:苯酚酚醛清漆樹脂(軟化點80℃、羥基當量105)
.球狀熔融二氧化矽:平均粒徑20 μ m
.三苯基膦
.偶合劑:γ-縮水甘油基丙基三甲氧基矽烷
.碳黑
.巴西棕櫚蠟
.低應力改質劑:平均粒徑5 μ m、NBR粉末與滑石之混合物
.TMA(α 1、α 2、Tg):使用轉注成形機,於金屬模具溫度175℃、注入壓力6.9 MPa、硬化時間90秒之條件下,成形10 mm×4 mm×4 mm之硬化物,於175℃硬化2小時後,以5℃/分之升溫速度藉由TMA進行測量。使所獲得之TMA曲線於60℃及260℃時之熱膨脹係數分別設為α 1、α 2,又,讀取60℃及260℃時之接線之交點溫度,將該溫度設為玻璃轉移溫度(Tg)。
彎曲彈性率(260℃):根據JIS K 6911進行測量。使用轉注成形機,於金屬模具溫度175℃、注入壓力6.9 MPa、硬化時間90秒之條件下,成形80 mm×10 mm×4 mm之試驗片,於175℃硬化2小時後,測量260℃時之彎曲彈性率。添加及結果如表2所示。組合單位設為重量份。
組件之組成方法以及評估方法如下所示。結果如表3所示。
使用旋塗機將所製造之緩衝層用樹脂組成物塗佈於形成有電路之矽晶圓上後,以加熱板於120℃下乾燥5分鐘,獲得膜厚約10 μ m之塗膜。於該塗膜上藉由i射線步進曝光機NSR-4425i(NIKON(股)製),通過標線片(reticle)以300 mJ/cm2
進行曝光。其後,為促進曝光部之交聯反應,以加熱板於100℃加熱4分鐘。
繼而,藉由於檸檬烯中浸漬30秒而溶解除去未曝光部後,以異丙醇洗淨20秒。其結果,確認成形有圖案。
使用東京應化製電漿裝置(OPM-EM1000)對該環狀烯烴系樹脂膜進行氧電漿處理。條件係採用輸出為400 W、10分鐘氧流量為200 sccm。
於160引腳LQFP(Low Profile Quad Flat Package)上,經由晶粒接合用樹脂糊安裝形成有緩衝層之半導體元件(半導體元件之尺寸7mm×7mm、半導體元件之厚度0.35 mm),以烘箱進行硬化。硬化條件為以30分鐘自室溫升溫至175℃,於175℃保持30分鐘,硬化後樹脂糊厚度約為20 μ m。
於接著膜之單面以150℃貼附厚度為0.35 mm之晶圓背面,獲得附有接著膜之晶圓。其後,將切割膜貼附於接著膜面。接著,使用晶圓切割機,將接合有接著膜之半導體晶圓以主軸旋轉數30,000 rpm、切斷速度50 mm/sec之條件,切割(切斷)為尺寸7 mm×7 mm之半導體元件,而獲得接合有切割膜及接著膜之半導體元件。繼而,將自切割片背面突起、於切割膜與接著膜層之間產生剝離、且接合有接著膜之半導體元件,以200℃、5N之條件,於160引腳LQFP上壓著1.0秒,進行芯片接合,以烘箱進行硬化。硬化條件為以30分鐘自室溫升溫至180℃、於180℃下保持60分鐘。
使用轉注成形機,於金屬模具溫度175℃、注入壓力6.9 MPa、硬化時間90秒之條件下,以樹脂糊或者樹脂膜將搭載有半導體元件之160引腳LQFP封包形成,於175℃硬化2小時後獲得樣品。
將各16個樣品,分別於85℃、相對濕度60%之環境下以及85℃、相對濕度85%之環境下處理168小時,其後,以IR回流焊(260℃)處理10秒鐘。使用超音波探測裝置進行觀察,檢測有無內部裂縫及各種界面剝離。關於以超音波探測裝置無法確定哪個位置之界面產生剝離者,藉由剖面觀察確定剝離界面。內部裂縫或者各種界面之剝離即便發現1個亦設為不良,不良組件之個數為n個時,表示為n/16。
12...導線架
14...墊片
16...晶粒接合材硬化物
18...半導體元件
20...焊墊
22...焊線
24...鈍化膜
26...緩衝層膜
28...封包材硬化物
上述目的及其他目的、特徵以及優點,根據前述較佳實施形態、及其所隨附之以下圖式可進一步明確。
圖1係本發明之半導體裝置之概略剖面圖。
12...導線架
14...墊片
16...晶粒接合材硬化物
18...半導體元件
20...焊墊
22...焊線
24...鈍化膜
26...緩衝層膜
28...封包材硬化物
Claims (8)
- 一種半導體裝置,係藉由晶粒接合用樹脂組成物之硬化物,將以緩衝層用樹脂組成物之硬化物覆蓋表面之半導體元件搭載於導線架之墊片上,藉由封包用樹脂組成物之硬化物封包搭載於上述導線架之墊片上之半導體元件而成者,其特徵在於:上述緩衝層用樹脂組成物之硬化物於25℃之彈性率為0.5 GPa以上且2.0 GPa以下,上述晶粒接合用樹脂組成物之硬化物於260℃之彈性率為1 MPa以上且120 MPa以下,上述封包用樹脂組成物之硬化物於260℃之彈性率為400 MPa以上且1200 MPa以下,該硬化物於260℃之熱膨脹係數為20 ppm以上且50 ppm以下,且上述封包用樹脂組成物之硬化物於260℃之彈性率與該硬化物於260℃之熱膨脹係數之積為8,000以上且45,000以下。
- 如申請專利範圍第1項之半導體裝置,其中,上述緩衝層用樹脂組成物包含由含有來自下述通式(1)所表示之降烯型單體的構成單位之加成(共)聚合物:
- 如申請專利範圍第1項之半導體裝置,其中,上述晶粒接合用樹脂組成物,含有選自由氫化雙酚A型環氧樹脂、1,4-環己烷二甲醇二縮水甘油醚、1,4-丁二醇二縮水甘油醚、1,6-己二醇二縮水甘油醚、二環戊二烯型環氧樹脂、以及分子內具有可自由基聚合之官能基的化合物所組成群中之至少一種以上熱硬化性樹脂。
- 如申請專利範圍第1項之半導體裝置,其中,上述晶粒接合用樹脂組成物含有:聚醯亞胺樹脂,其係藉由四羧酸二酐、以通式(2)
- 如申請專利範圍第1項之半導體裝置,其中,上述封包用樹脂組成物含有:一種以上之樹脂,其係選自由聯苯型環氧樹脂、雙酚型環氧樹脂、苯酚芳烷基型環氧樹脂、苯酚芳烷基樹脂以及萘酚芳烷基樹脂所組成之群中;以及無機填充材,其於該樹脂組成物中含有80重量%以上且95重量%以下。
- 一種用於申請專利範圍第1項之半導體裝置之緩衝層用樹脂組成物,其係使用於藉由晶粒接合用樹脂組成物之硬化物而將以緩衝層用樹脂組成物之硬化物覆蓋表面之半導體元件搭載於導線架之墊片上,藉由封包用樹脂組成物之硬化物封包搭載於上述導線架之墊片上之半導體元件而成的半導體裝置中者,其特徵在於,硬化物於25℃之彈性率為0.5 GPa以上且2.0 GPa以下。
- 一種用於申請專利範圍第1項之半導體裝置之晶粒接合用樹脂組成物,其係使用於藉由晶粒接合用樹脂組成物之硬化物而將以緩衝層用樹脂組成物之硬化物覆蓋表面之半導體元件搭載於導線架之墊片上,藉由封包用樹脂組成物之硬化物封包搭載於上述導線架之墊片上之半導體元件而成的半導體裝置中者,其特徵在於,硬化物於260℃之彈性率為1 MPa以上且120 MPa以下。
- 一種用於申請專利範圍第1項之半導體裝置之封包用樹脂組成物,其係使用於藉由晶粒接合用樹脂組成物之硬化物而將以緩衝層用樹脂組成物之硬化物覆蓋表面之半導體元件搭載於導線架之墊片上,藉由封包用樹脂組成物之硬化物封包搭載於上述導線架之墊片上之半導體元件而成的半導體裝置中者,其特徵在於,硬化物於260℃之彈性率為400 MPa以上且1200 MPa以下,於260℃之熱膨脹係數為20 ppm以上且50 ppm以下,上述硬化物於260℃之彈性率與該硬化物於260℃之熱膨脹係數之積為8,000以上且45,000以下。
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CN100477179C (zh) | 2009-04-08 |
TW200700490A (en) | 2007-01-01 |
JPWO2006103962A1 (ja) | 2008-09-04 |
CN101116184A (zh) | 2008-01-30 |
KR20070118132A (ko) | 2007-12-13 |
WO2006103962A1 (ja) | 2006-10-05 |
JP4935670B2 (ja) | 2012-05-23 |
KR101036728B1 (ko) | 2011-05-24 |
MY147837A (en) | 2013-01-31 |
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