TWI387846B - 光罩坯片及其製法 - Google Patents
光罩坯片及其製法 Download PDFInfo
- Publication number
- TWI387846B TWI387846B TW093129331A TW93129331A TWI387846B TW I387846 B TWI387846 B TW I387846B TW 093129331 A TW093129331 A TW 093129331A TW 93129331 A TW93129331 A TW 93129331A TW I387846 B TWI387846 B TW I387846B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- photoresist
- photoresist film
- film
- thickness
- Prior art date
Links
- 238000002360 preparation method Methods 0.000 title 1
- 229920002120 photoresistant polymer Polymers 0.000 claims description 603
- 239000000758 substrate Substances 0.000 claims description 551
- 238000001035 drying Methods 0.000 claims description 116
- 238000000034 method Methods 0.000 claims description 100
- 230000002093 peripheral effect Effects 0.000 claims description 76
- 239000002904 solvent Substances 0.000 claims description 69
- 238000004519 manufacturing process Methods 0.000 claims description 40
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 claims description 38
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 29
- FFWSICBKRCICMR-UHFFFAOYSA-N 5-methyl-2-hexanone Chemical compound CC(C)CCC(C)=O FFWSICBKRCICMR-UHFFFAOYSA-N 0.000 claims description 28
- 238000012546 transfer Methods 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 22
- 229940116333 ethyl lactate Drugs 0.000 claims description 19
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 17
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- 239000011651 chromium Substances 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 230000007261 regionalization Effects 0.000 claims description 3
- 238000000265 homogenisation Methods 0.000 claims 2
- 239000010408 film Substances 0.000 description 364
- 238000000576 coating method Methods 0.000 description 115
- 239000011248 coating agent Substances 0.000 description 99
- 230000015572 biosynthetic process Effects 0.000 description 33
- 238000004528 spin coating Methods 0.000 description 25
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 22
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 22
- 230000007547 defect Effects 0.000 description 19
- 238000010438 heat treatment Methods 0.000 description 19
- -1 poly(glycidyl methacrylate) Polymers 0.000 description 18
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 14
- 229920005989 resin Polymers 0.000 description 13
- 239000011347 resin Substances 0.000 description 13
- 239000000428 dust Substances 0.000 description 12
- 239000002245 particle Substances 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 11
- 239000007789 gas Substances 0.000 description 10
- 238000005259 measurement Methods 0.000 description 10
- 229920003986 novolac Polymers 0.000 description 10
- 230000002829 reductive effect Effects 0.000 description 10
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 9
- 238000009826 distribution Methods 0.000 description 9
- 238000001816 cooling Methods 0.000 description 7
- 238000004090 dissolution Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000000275 quality assurance Methods 0.000 description 6
- 101100441413 Caenorhabditis elegans cup-15 gene Proteins 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 4
- 229910000423 chromium oxide Inorganic materials 0.000 description 4
- 238000013467 fragmentation Methods 0.000 description 4
- 238000006062 fragmentation reaction Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000011324 bead Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000036961 partial effect Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- RXDAPJJFRLSRPX-UHFFFAOYSA-N 2,3-dimethoxypropan-1-ol Chemical compound COCC(CO)OC RXDAPJJFRLSRPX-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- JQCWLRHNAHIIGW-UHFFFAOYSA-N 2,8-dimethylnonan-5-one Chemical compound CC(C)CCC(=O)CCC(C)C JQCWLRHNAHIIGW-UHFFFAOYSA-N 0.000 description 1
- ZPQAKYPOZRXKFA-UHFFFAOYSA-N 6-Undecanone Chemical compound CCCCCC(=O)CCCCC ZPQAKYPOZRXKFA-UHFFFAOYSA-N 0.000 description 1
- XEUCQOBUZPQUMQ-UHFFFAOYSA-N Glycolone Chemical compound COC1=C(CC=C(C)C)C(=O)NC2=C1C=CC=C2OC XEUCQOBUZPQUMQ-UHFFFAOYSA-N 0.000 description 1
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920002454 poly(glycidyl methacrylate) polymer Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/40—Distributing applied liquids or other fluent materials by members moving relatively to surface
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Materials For Photolithography (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003338533 | 2003-09-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200517786A TW200517786A (en) | 2005-06-01 |
| TWI387846B true TWI387846B (zh) | 2013-03-01 |
Family
ID=34373315
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093129331A TWI387846B (zh) | 2003-09-29 | 2004-09-29 | 光罩坯片及其製法 |
| TW097117082A TWI391779B (zh) | 2003-09-29 | 2004-09-29 | 光罩坯片及轉印光罩 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097117082A TWI391779B (zh) | 2003-09-29 | 2004-09-29 | 光罩坯片及轉印光罩 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7674561B2 (cg-RX-API-DMAC7.html) |
| JP (2) | JP2011040770A (cg-RX-API-DMAC7.html) |
| KR (5) | KR20050031425A (cg-RX-API-DMAC7.html) |
| CN (2) | CN1983028B (cg-RX-API-DMAC7.html) |
| DE (1) | DE102004047355B4 (cg-RX-API-DMAC7.html) |
| TW (2) | TWI387846B (cg-RX-API-DMAC7.html) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200909997A (en) * | 2004-07-09 | 2009-03-01 | Hoya Corp | Photomask blank, photomask manufacturing method and semiconductor device manufacturing method |
| US7678511B2 (en) * | 2006-01-12 | 2010-03-16 | Asahi Glass Company, Limited | Reflective-type mask blank for EUV lithography |
| KR100780814B1 (ko) * | 2006-08-16 | 2007-11-30 | 주식회사 에스앤에스텍 | 차폐판 및 이를 구비한 레지스트 코팅장치 |
| JP5348866B2 (ja) * | 2007-09-14 | 2013-11-20 | Ｈｏｙａ株式会社 | マスクの製造方法 |
| JP5393972B2 (ja) * | 2007-11-05 | 2014-01-22 | Ｈｏｙａ株式会社 | マスクブランク及び転写用マスクの製造方法 |
| JP4663749B2 (ja) * | 2008-03-11 | 2011-04-06 | 大日本印刷株式会社 | 反射型マスクの検査方法および製造方法 |
| KR101654515B1 (ko) * | 2009-07-01 | 2016-09-07 | 주식회사 에스앤에스텍 | 포토마스크 블랭크, 포토마스크 블랭크의 제조방법 및 포토마스크 |
| CN101968606B (zh) * | 2009-07-27 | 2013-01-23 | 北京京东方光电科技有限公司 | 掩膜基板和边框胶固化系统 |
| KR102167485B1 (ko) * | 2012-09-13 | 2020-10-19 | 호야 가부시키가이샤 | 마스크 블랭크의 제조 방법 및 전사용 마스크의 제조 방법 |
| KR102239197B1 (ko) * | 2012-09-13 | 2021-04-09 | 호야 가부시키가이샤 | 마스크 블랭크의 제조 방법 및 전사용 마스크의 제조 방법 |
| CN106610568A (zh) * | 2015-10-27 | 2017-05-03 | 沈阳芯源微电子设备有限公司 | 一种涂胶显影工艺模块及该模块内环境参数的控制方法 |
| JP6504996B2 (ja) * | 2015-11-04 | 2019-04-24 | 東京エレクトロン株式会社 | 塗布膜形成方法、塗布膜形成装置、及びコンピュータ読み取り可能な記録媒体 |
| JP7038211B2 (ja) * | 2018-06-29 | 2022-03-17 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、及びフォトマスク |
| CN112655074B (zh) * | 2018-09-10 | 2024-07-12 | 东京毅力科创株式会社 | 涂布膜形成方法以及涂布膜形成装置 |
| JP7154572B2 (ja) * | 2018-09-12 | 2022-10-18 | Hoya株式会社 | マスクブランク、転写用マスク、及び半導体デバイスの製造方法 |
| JP7202901B2 (ja) * | 2019-01-18 | 2023-01-12 | 東京エレクトロン株式会社 | 塗布膜形成方法及び塗布膜形成装置 |
| TWI699580B (zh) * | 2019-03-07 | 2020-07-21 | 友達光電股份有限公司 | 陣列基板 |
| KR102743196B1 (ko) * | 2023-04-17 | 2024-12-16 | 에스케이엔펄스 주식회사 | 블랭크 마스크 및 이의 제조 방법 |
Family Cites Families (62)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54153844A (en) * | 1978-05-23 | 1979-12-04 | Cho Lsi Gijutsu Kenkyu Kumiai | Rotary coating for resist |
| JPS60123031A (ja) * | 1983-12-08 | 1985-07-01 | Hoya Corp | レジスト塗布方法 |
| JPS618480U (ja) * | 1984-06-18 | 1986-01-18 | 凸版印刷株式会社 | 回転塗布装置 |
| JPS6295172A (ja) | 1985-10-21 | 1987-05-01 | Hitachi Ltd | 回転塗布装置 |
| JPS63229169A (ja) | 1987-03-18 | 1988-09-26 | Hitachi Ltd | 塗布装置 |
| JP2583239B2 (ja) * | 1987-06-16 | 1997-02-19 | 大日本印刷株式会社 | フォトマスク用基板等へのレジスト塗布方法およびスピンナチャック装置 |
| EP0356140B1 (en) * | 1988-08-19 | 1995-01-04 | Hitachi Maxell Ltd. | Optical data recording medium and manufacturing apparatus and method thereof |
| JP2505033B2 (ja) * | 1988-11-28 | 1996-06-05 | 東京応化工業株式会社 | 電子線レジスト組成物及びそれを用いた微細パタ―ンの形成方法 |
| JPH02249225A (ja) * | 1989-03-22 | 1990-10-05 | Fujitsu Ltd | レジスト塗布装置 |
| US4988464A (en) * | 1989-06-01 | 1991-01-29 | Union Carbide Corporation | Method for producing powder by gas atomization |
| JPH0588367A (ja) * | 1991-09-30 | 1993-04-09 | Fujitsu Ltd | レジスト組成物とレジストパターンの形成方法 |
| WO1994019396A1 (en) | 1992-02-12 | 1994-09-01 | Brewer Science, Inc. | Polymers with intrinsic light-absorbing properties |
| US5691115A (en) * | 1992-06-10 | 1997-11-25 | Hitachi, Ltd. | Exposure method, aligner, and method of manufacturing semiconductor integrated circuit devices |
| KR100298609B1 (ko) * | 1992-07-30 | 2001-11-30 | 기타지마 요시토시 | 위상쉬프트층을갖는포토마스크의제조방법 |
| DE4400975C2 (de) * | 1993-01-14 | 2001-11-29 | Toshiba Kawasaki Kk | Verfahren zum Ausbilden von Mustern |
| JPH06250380A (ja) * | 1993-02-26 | 1994-09-09 | Hoya Corp | 不要膜除去方法及びその装置並びに位相シフトマスクブランクの製造方法 |
| JPH06267836A (ja) | 1993-03-15 | 1994-09-22 | Casio Comput Co Ltd | レジスト塗布方法およびその装置 |
| JP3345468B2 (ja) * | 1993-07-05 | 2002-11-18 | ホーヤ株式会社 | 不要膜除去方法及びその装置並びに位相シフトマスクブランクス製造方法 |
| KR960015081A (ko) | 1993-07-15 | 1996-05-22 | 마쯔모또 에이이찌 | 화학증폭형 레지스트 조성물 |
| TW285779B (cg-RX-API-DMAC7.html) | 1994-08-08 | 1996-09-11 | Tokyo Electron Co Ltd | |
| JPH0945611A (ja) | 1995-07-27 | 1997-02-14 | Dainippon Screen Mfg Co Ltd | 回転式基板塗布装置 |
| US6165673A (en) | 1995-12-01 | 2000-12-26 | International Business Machines Corporation | Resist composition with radiation sensitive acid generator |
| JPH09225375A (ja) | 1996-02-22 | 1997-09-02 | Seiko Epson Corp | スピンコーターヘッド |
| JP3198915B2 (ja) * | 1996-04-02 | 2001-08-13 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト材料 |
| TW344097B (en) | 1996-04-09 | 1998-11-01 | Tokyo Electron Co Ltd | Photoresist treating device of substrate and photoresist treating method |
| JPH1024262A (ja) | 1996-07-12 | 1998-01-27 | Canon Inc | 回転塗布方法及び回転塗布装置 |
| JPH1028925A (ja) | 1996-07-19 | 1998-02-03 | Dainippon Screen Mfg Co Ltd | 塗布液塗布方法 |
| JPH1090882A (ja) | 1996-09-17 | 1998-04-10 | Fuji Photo Film Co Ltd | 化学増幅型ポジレジスト組成物 |
| JPH10154650A (ja) | 1996-11-25 | 1998-06-09 | Dainippon Screen Mfg Co Ltd | 塗布液塗布方法 |
| US5962184A (en) | 1996-12-13 | 1999-10-05 | International Business Machines Corporation | Photoresist composition comprising a copolymer of a hydroxystyrene and a (meth)acrylate substituted with an alicyclic ester substituent |
| US5773082A (en) | 1997-01-16 | 1998-06-30 | United Microelectronics Corp. | Method for applying photoresist on wafer |
| JPH10286510A (ja) * | 1997-04-16 | 1998-10-27 | Fujitsu Ltd | レジスト塗布装置及びレジスト塗布方法 |
| JPH1142460A (ja) * | 1997-07-28 | 1999-02-16 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
| US5780105A (en) | 1997-07-31 | 1998-07-14 | Vanguard International Semiconductor Corporation | Method for uniformly coating a semiconductor wafer with photoresist |
| JPH1149806A (ja) * | 1997-08-01 | 1999-02-23 | Nippon Zeon Co Ltd | （メタ）アクリル酸エステル共重合体の製造方法 |
| EP1031877A4 (en) * | 1997-11-11 | 2001-05-09 | Nikon Corp | PHOTOMASK, ABERRATION CORRECTION PLATE, AND EXPOSURE DEVICE AND METHOD FOR PRODUCING A MICROSTRUCTURE |
| US6162564A (en) | 1997-11-25 | 2000-12-19 | Kabushiki Kaisha Toshiba | Mask blank and method of producing mask |
| JPH11345763A (ja) * | 1998-06-02 | 1999-12-14 | Nippon Foundry Inc | 半導体基板の処理装置 |
| JP4317613B2 (ja) * | 1999-06-30 | 2009-08-19 | 株式会社エムテーシー | 基板保持装置 |
| JP3602419B2 (ja) * | 1999-07-23 | 2004-12-15 | 株式会社半導体先端テクノロジーズ | レジスト塗布方法、レジスト塗布装置、マスクパターン形成方法および液晶基板のパターン形成方法 |
| US6527860B1 (en) | 1999-10-19 | 2003-03-04 | Tokyo Electron Limited | Substrate processing apparatus |
| JP4043163B2 (ja) * | 1999-12-24 | 2008-02-06 | エム・セテック株式会社 | 薬液塗布方法とその装置 |
| US6579382B2 (en) * | 2000-02-17 | 2003-06-17 | Kabushiki Kaisha Toshiba | Chemical liquid processing apparatus for processing a substrate and the method thereof |
| JP2001228633A (ja) * | 2000-02-17 | 2001-08-24 | Matsushita Electric Ind Co Ltd | ホールパターンの形成方法 |
| JP3689301B2 (ja) | 2000-03-15 | 2005-08-31 | Ｈｏｙａ株式会社 | フォトマスクブランクの製造方法及び不要膜除去装置 |
| US6327793B1 (en) | 2000-03-20 | 2001-12-11 | Silicon Valley Group | Method for two dimensional adaptive process control of critical dimensions during spin coating process |
| JP2001274076A (ja) * | 2000-03-28 | 2001-10-05 | Toshiba Corp | マーク検出方法、露光方法及びパターン検査方法 |
| EP1143300A1 (en) | 2000-04-03 | 2001-10-10 | Shipley Company LLC | Photoresist compositions and use of same |
| JP2001305713A (ja) | 2000-04-25 | 2001-11-02 | Shin Etsu Chem Co Ltd | フォトマスク用ブランクス及びフォトマスク |
| JP3712047B2 (ja) | 2000-08-14 | 2005-11-02 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
| JP3768786B2 (ja) | 2000-08-15 | 2006-04-19 | 株式会社ルネサステクノロジ | ホトマスクの製造方法、ホトマスクブランクスの製造方法およびホトマスクの再生方法 |
| JP2002090978A (ja) | 2000-09-12 | 2002-03-27 | Hoya Corp | 位相シフトマスクブランクの製造方法、及び位相シフトマスクブランクの製造装置 |
| JP3914386B2 (ja) | 2000-12-28 | 2007-05-16 | 株式会社ルネサステクノロジ | フォトマスク、その製造方法、パターン形成方法および半導体装置の製造方法 |
| JP2002357905A (ja) * | 2001-03-28 | 2002-12-13 | Sumitomo Chem Co Ltd | レジスト組成物 |
| JP3642316B2 (ja) * | 2001-06-15 | 2005-04-27 | 日本電気株式会社 | 化学増幅レジスト用単量体、化学増幅レジスト用重合体、化学増幅レジスト組成物、パターン形成方法 |
| KR100894244B1 (ko) * | 2001-07-13 | 2009-04-20 | 교와 핫꼬 케미칼 가부시키가이샤 | 에테르 화합물의 제조법 |
| TW591341B (en) | 2001-09-26 | 2004-06-11 | Shipley Co Llc | Coating compositions for use with an overcoated photoresist |
| JP3607903B2 (ja) * | 2001-09-28 | 2005-01-05 | Ｈｏｙａ株式会社 | マスクブランク、不要膜除去方法及びその装置、並びにマスクブランク及びマスクの製造方法 |
| JP4195393B2 (ja) | 2002-03-12 | 2008-12-10 | ウェルゲイト・コーポレイション | 不完了呼に対する発信者情報提供方法及び装置 |
| JP4118585B2 (ja) * | 2002-04-03 | 2008-07-16 | Ｈｏｙａ株式会社 | マスクブランクの製造方法 |
| JP3973103B2 (ja) * | 2003-03-31 | 2007-09-12 | Ｈｏｙａ株式会社 | マスクブランクスの製造方法 |
| JP4029215B2 (ja) | 2004-03-24 | 2008-01-09 | 株式会社村田製作所 | 位相調整回路およびこれを備えた発振器 |
-
2004
- 2004-09-24 CN CN2006101727019A patent/CN1983028B/zh not_active Expired - Fee Related
- 2004-09-24 CN CNB2004100118724A patent/CN100537053C/zh not_active Expired - Fee Related
- 2004-09-24 KR KR1020040077049A patent/KR20050031425A/ko not_active Ceased
- 2004-09-29 DE DE102004047355.2A patent/DE102004047355B4/de not_active Expired - Fee Related
- 2004-09-29 US US10/951,696 patent/US7674561B2/en active Active
- 2004-09-29 TW TW093129331A patent/TWI387846B/zh not_active IP Right Cessation
- 2004-09-29 TW TW097117082A patent/TWI391779B/zh not_active IP Right Cessation
-
2007
- 2007-03-30 KR KR1020070031715A patent/KR20070039909A/ko not_active Ceased
- 2007-03-30 KR KR1020070031697A patent/KR100976977B1/ko not_active Expired - Fee Related
-
2008
- 2008-07-07 KR KR1020080065551A patent/KR101047646B1/ko not_active Expired - Fee Related
-
2010
- 2010-06-18 KR KR1020100058019A patent/KR101045177B1/ko not_active Expired - Fee Related
- 2010-09-22 JP JP2010211759A patent/JP2011040770A/ja active Pending
-
2015
- 2015-03-23 JP JP2015059236A patent/JP2015111312A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN1983028B (zh) | 2012-07-25 |
| KR20070039908A (ko) | 2007-04-13 |
| DE102004047355B4 (de) | 2022-03-10 |
| KR20070039909A (ko) | 2007-04-13 |
| KR101045177B1 (ko) | 2011-06-30 |
| JP2015111312A (ja) | 2015-06-18 |
| KR20100085003A (ko) | 2010-07-28 |
| CN100537053C (zh) | 2009-09-09 |
| KR101047646B1 (ko) | 2011-07-07 |
| CN1983028A (zh) | 2007-06-20 |
| US7674561B2 (en) | 2010-03-09 |
| US20050069787A1 (en) | 2005-03-31 |
| TW200837492A (en) | 2008-09-16 |
| KR20080075816A (ko) | 2008-08-19 |
| DE102004047355A1 (de) | 2005-04-28 |
| TW200517786A (en) | 2005-06-01 |
| TWI391779B (zh) | 2013-04-01 |
| CN1605397A (zh) | 2005-04-13 |
| KR20050031425A (ko) | 2005-04-06 |
| JP2011040770A (ja) | 2011-02-24 |
| KR100976977B1 (ko) | 2010-08-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI387846B (zh) | 光罩坯片及其製法 | |
| KR100801159B1 (ko) | 이머젼 리소그라피 에지 비드 제거 | |
| US6183942B1 (en) | Thinner composition for removing spin-on-glass and photoresist | |
| TWI395074B (zh) | 稀釋劑組合物及利用該組合物移除光阻劑之方法 | |
| TWI606293B (zh) | Method of manufacturing mask substrate and method of manufacturing mask for transfer (1) | |
| JP6251524B2 (ja) | マスクブランクの製造方法及び転写用マスクの製造方法 | |
| KR100964772B1 (ko) | 포토마스크 블랭크의 제조 방법 및 제조 장치와, 불필요한 막 제거 장치 | |
| JP4629396B2 (ja) | マスクブランクの製造方法及び転写マスクの製造方法 | |
| JP6114009B2 (ja) | 反射型マスクブランク及び反射型マスクの製造方法 | |
| JP6106413B2 (ja) | 反射型マスクブランク及び反射型マスクの製造方法 | |
| CN1761913B (zh) | 光刻掩膜板的制造方法 | |
| WO2007013540A1 (ja) | マスクブランクの製造方法及び露光用マスクの製造方法 | |
| JP3973103B2 (ja) | マスクブランクスの製造方法 | |
| JPH07295210A (ja) | 光反射性防止材料及びパターン形成方法 | |
| KR20130016881A (ko) | 감광성 수지 또는 반사방지막 제거용 신너 조성물 | |
| JPS58122726A (ja) | レジスト寸法の精密制御による半導体素子の製造方法 | |
| JPH0745498A (ja) | 反射および干渉防止樹脂膜の形成方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |