DE102004047355A1 - Maskenrohlinge und Verfahren zu ihrer Herstellung - Google Patents

Maskenrohlinge und Verfahren zu ihrer Herstellung Download PDF

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Publication number
DE102004047355A1
DE102004047355A1 DE102004047355A DE102004047355A DE102004047355A1 DE 102004047355 A1 DE102004047355 A1 DE 102004047355A1 DE 102004047355 A DE102004047355 A DE 102004047355A DE 102004047355 A DE102004047355 A DE 102004047355A DE 102004047355 A1 DE102004047355 A1 DE 102004047355A1
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DE
Germany
Prior art keywords
substrate
resist
resist solution
resist film
center
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE102004047355A
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English (en)
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DE102004047355B4 (de
Inventor
Hideo Kobayashi
Takao Higuchi
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Hoya Corp
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Hoya Corp
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Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of DE102004047355A1 publication Critical patent/DE102004047355A1/de
Application granted granted Critical
Publication of DE102004047355B4 publication Critical patent/DE102004047355B4/de
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/40—Distributing applied liquids or other fluent materials by members moving relatively to surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

Ein Verfahren zur Herstellung eines Maskenrohlings hat einen Resistfilmbildungsprozeß mit den folgenden Schritten: Abgeben einer Resistlösung, die ein Resistmaterial und ein Lösungsmittel enthält, auf ein quadratartiges Substrat und Drehen des Substrats, um die abgegebene Resistlösung über das Substrat zu verteilen und die Resistlösung auf dem Substrat zu trocknen, wodurch ein Resistfilm auf dem Substrat gebildet wird. Während das Substrat im Resistfilmbildungsprozeß (Resistbeschichtungsprozeß) gedreht wird, führt ein Absaugteil einen Absaugbetrieb durch, um einen Luftstrom entlang einer Oberseite des Substrats von der Mitte des Substrats zu einem Außenumfangsabschnitt des Substrats zu bewirken, so daß eine Lache der Resistlösung, die an einem Umfangsendabschnitt des Substrats gebildet wird, daran gehindert wird, zur Mitte des Substrats durch die Drehung des Substrats bewegt zu werden.
DE102004047355.2A 2003-09-29 2004-09-29 Verfahren zur Herstellung von Maskenrohlingen Expired - Fee Related DE102004047355B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003338533 2003-09-29
JP2003-338533 2003-09-29

Publications (2)

Publication Number Publication Date
DE102004047355A1 true DE102004047355A1 (de) 2005-04-28
DE102004047355B4 DE102004047355B4 (de) 2022-03-10

Family

ID=34373315

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102004047355.2A Expired - Fee Related DE102004047355B4 (de) 2003-09-29 2004-09-29 Verfahren zur Herstellung von Maskenrohlingen

Country Status (6)

Country Link
US (1) US7674561B2 (de)
JP (2) JP2011040770A (de)
KR (5) KR20050031425A (de)
CN (2) CN100537053C (de)
DE (1) DE102004047355B4 (de)
TW (2) TWI387846B (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200909999A (en) * 2004-07-09 2009-03-01 Hoya Corp Photomask blank, photomask manufacturing method and semiconductor device manufacturing method
US7678511B2 (en) * 2006-01-12 2010-03-16 Asahi Glass Company, Limited Reflective-type mask blank for EUV lithography
KR100780814B1 (ko) * 2006-08-16 2007-11-30 주식회사 에스앤에스텍 차폐판 및 이를 구비한 레지스트 코팅장치
JP5348866B2 (ja) * 2007-09-14 2013-11-20 Ｈｏｙａ株式会社 マスクの製造方法
JP5393972B2 (ja) * 2007-11-05 2014-01-22 Ｈｏｙａ株式会社 マスクブランク及び転写用マスクの製造方法
JP4663749B2 (ja) * 2008-03-11 2011-04-06 大日本印刷株式会社 反射型マスクの検査方法および製造方法
KR101654515B1 (ko) * 2009-07-01 2016-09-07 주식회사 에스앤에스텍 포토마스크 블랭크, 포토마스크 블랭크의 제조방법 및 포토마스크
CN101968606B (zh) * 2009-07-27 2013-01-23 北京京东方光电科技有限公司 掩膜基板和边框胶固化系统
KR102167485B1 (ko) * 2012-09-13 2020-10-19 호야 가부시키가이샤 마스크 블랭크의 제조 방법 및 전사용 마스크의 제조 방법
KR102239197B1 (ko) * 2012-09-13 2021-04-09 호야 가부시키가이샤 마스크 블랭크의 제조 방법 및 전사용 마스크의 제조 방법
CN106610568A (zh) * 2015-10-27 2017-05-03 沈阳芯源微电子设备有限公司 一种涂胶显影工艺模块及该模块内环境参数的控制方法
JP6504996B2 (ja) * 2015-11-04 2019-04-24 東京エレクトロン株式会社 塗布膜形成方法、塗布膜形成装置、及びコンピュータ読み取り可能な記録媒体
JP7038211B2 (ja) * 2018-06-29 2022-03-17 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、及びフォトマスク
KR20210052532A (ko) * 2018-09-10 2021-05-10 도쿄엘렉트론가부시키가이샤 도포막 형성 방법 및 도포막 형성 장치
JP7154572B2 (ja) * 2018-09-12 2022-10-18 Hoya株式会社 マスクブランク、転写用マスク、及び半導体デバイスの製造方法
JP7202901B2 (ja) * 2019-01-18 2023-01-12 東京エレクトロン株式会社 塗布膜形成方法及び塗布膜形成装置
TWI699580B (zh) * 2019-03-07 2020-07-21 友達光電股份有限公司 陣列基板

Family Cites Families (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54153844A (en) * 1978-05-23 1979-12-04 Cho Lsi Gijutsu Kenkyu Kumiai Rotary coating for resist
JPS60123031A (ja) 1983-12-08 1985-07-01 Hoya Corp レジスト塗布方法
JPS618480U (ja) * 1984-06-18 1986-01-18 凸版印刷株式会社 回転塗布装置
JPS6295172A (ja) 1985-10-21 1987-05-01 Hitachi Ltd 回転塗布装置
JPS63229169A (ja) 1987-03-18 1988-09-26 Hitachi Ltd 塗布装置
JP2583239B2 (ja) * 1987-06-16 1997-02-19 大日本印刷株式会社 フォトマスク用基板等へのレジスト塗布方法およびスピンナチャック装置
DE68920380T2 (de) * 1988-08-19 1995-05-11 Hitachi Maxell Aufzeichnungsmedium für optische Daten und Herstellungsgerät und -methode dafür.
JP2505033B2 (ja) * 1988-11-28 1996-06-05 東京応化工業株式会社 電子線レジスト組成物及びそれを用いた微細パタ―ンの形成方法
JPH02249225A (ja) * 1989-03-22 1990-10-05 Fujitsu Ltd レジスト塗布装置
US4988464A (en) * 1989-06-01 1991-01-29 Union Carbide Corporation Method for producing powder by gas atomization
JPH0588367A (ja) * 1991-09-30 1993-04-09 Fujitsu Ltd レジスト組成物とレジストパターンの形成方法
WO1994019396A1 (en) 1992-02-12 1994-09-01 Brewer Science, Inc. Polymers with intrinsic light-absorbing properties
US5691115A (en) * 1992-06-10 1997-11-25 Hitachi, Ltd. Exposure method, aligner, and method of manufacturing semiconductor integrated circuit devices
KR100298609B1 (ko) * 1992-07-30 2001-11-30 기타지마 요시토시 위상쉬프트층을갖는포토마스크의제조방법
DE4400975C2 (de) * 1993-01-14 2001-11-29 Toshiba Kawasaki Kk Verfahren zum Ausbilden von Mustern
JPH06250380A (ja) * 1993-02-26 1994-09-09 Hoya Corp 不要膜除去方法及びその装置並びに位相シフトマスクブランクの製造方法
JPH06267836A (ja) 1993-03-15 1994-09-22 Casio Comput Co Ltd レジスト塗布方法およびその装置
JP3345468B2 (ja) * 1993-07-05 2002-11-18 ホーヤ株式会社 不要膜除去方法及びその装置並びに位相シフトマスクブランクス製造方法
KR960015081A (ko) 1993-07-15 1996-05-22 마쯔모또 에이이찌 화학증폭형 레지스트 조성물
US5695817A (en) 1994-08-08 1997-12-09 Tokyo Electron Limited Method of forming a coating film
JPH0945611A (ja) 1995-07-27 1997-02-14 Dainippon Screen Mfg Co Ltd 回転式基板塗布装置
US6165673A (en) 1995-12-01 2000-12-26 International Business Machines Corporation Resist composition with radiation sensitive acid generator
JPH09225375A (ja) 1996-02-22 1997-09-02 Seiko Epson Corp スピンコーターヘッド
JP3198915B2 (ja) * 1996-04-02 2001-08-13 信越化学工業株式会社 化学増幅ポジ型レジスト材料
TW344097B (en) 1996-04-09 1998-11-01 Tokyo Electron Co Ltd Photoresist treating device of substrate and photoresist treating method
JPH1028925A (ja) 1996-07-19 1998-02-03 Dainippon Screen Mfg Co Ltd 塗布液塗布方法
JPH1090882A (ja) 1996-09-17 1998-04-10 Fuji Photo Film Co Ltd 化学増幅型ポジレジスト組成物
JPH10154650A (ja) 1996-11-25 1998-06-09 Dainippon Screen Mfg Co Ltd 塗布液塗布方法
US5962184A (en) 1996-12-13 1999-10-05 International Business Machines Corporation Photoresist composition comprising a copolymer of a hydroxystyrene and a (meth)acrylate substituted with an alicyclic ester substituent
US5773082A (en) 1997-01-16 1998-06-30 United Microelectronics Corp. Method for applying photoresist on wafer
JPH10286510A (ja) * 1997-04-16 1998-10-27 Fujitsu Ltd レジスト塗布装置及びレジスト塗布方法
JPH1142460A (ja) * 1997-07-28 1999-02-16 Dainippon Screen Mfg Co Ltd 基板処理装置
US5780105A (en) 1997-07-31 1998-07-14 Vanguard International Semiconductor Corporation Method for uniformly coating a semiconductor wafer with photoresist
JPH1149806A (ja) * 1997-08-01 1999-02-23 Nippon Zeon Co Ltd （メタ）アクリル酸エステル共重合体の製造方法
AU9763998A (en) * 1997-11-11 1999-05-31 Nikon Corporation Photomask, aberration correcting plate, exposure device and method of producing microdevice
US6162564A (en) 1997-11-25 2000-12-19 Kabushiki Kaisha Toshiba Mask blank and method of producing mask
JPH11345763A (ja) * 1998-06-02 1999-12-14 Nippon Foundry Inc 半導体基板の処理装置
JP4317613B2 (ja) * 1999-06-30 2009-08-19 株式会社エムテーシー 基板保持装置
JP3602419B2 (ja) * 1999-07-23 2004-12-15 株式会社半導体先端テクノロジーズ レジスト塗布方法、レジスト塗布装置、マスクパターン形成方法および液晶基板のパターン形成方法
US6527860B1 (en) 1999-10-19 2003-03-04 Tokyo Electron Limited Substrate processing apparatus
JP4043163B2 (ja) * 1999-12-24 2008-02-06 エム・セテック株式会社 薬液塗布方法とその装置
TWI228755B (en) * 2000-02-17 2005-03-01 Toshiba Corp Chemical liquid processing apparatus and the method thereof
JP2001228633A (ja) * 2000-02-17 2001-08-24 Matsushita Electric Ind Co Ltd ホールパターンの形成方法
JP3689301B2 (ja) 2000-03-15 2005-08-31 Ｈｏｙａ株式会社 フォトマスクブランクの製造方法及び不要膜除去装置
US6327793B1 (en) 2000-03-20 2001-12-11 Silicon Valley Group Method for two dimensional adaptive process control of critical dimensions during spin coating process
JP2001274076A (ja) * 2000-03-28 2001-10-05 Toshiba Corp マーク検出方法、露光方法及びパターン検査方法
EP1143300A1 (de) 2000-04-03 2001-10-10 Shipley Company LLC Photoresistzusammensetzungen und ihre Verwendung
JP2001305713A (ja) 2000-04-25 2001-11-02 Shin Etsu Chem Co Ltd フォトマスク用ブランクス及びフォトマスク
JP3712047B2 (ja) 2000-08-14 2005-11-02 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP3768786B2 (ja) 2000-08-15 2006-04-19 株式会社ルネサステクノロジ ホトマスクの製造方法、ホトマスクブランクスの製造方法およびホトマスクの再生方法
JP2002090978A (ja) 2000-09-12 2002-03-27 Hoya Corp 位相シフトマスクブランクの製造方法、及び位相シフトマスクブランクの製造装置
JP3914386B2 (ja) 2000-12-28 2007-05-16 株式会社ルネサステクノロジ フォトマスク、その製造方法、パターン形成方法および半導体装置の製造方法
JP2002357905A (ja) * 2001-03-28 2002-12-13 Sumitomo Chem Co Ltd レジスト組成物
JP3642316B2 (ja) * 2001-06-15 2005-04-27 日本電気株式会社 化学増幅レジスト用単量体、化学増幅レジスト用重合体、化学増幅レジスト組成物、パターン形成方法
WO2003006407A1 (fr) * 2001-07-13 2003-01-23 Kyowa Yuka Co., Ltd. Procédé de production de composé d'éther
TW591341B (en) 2001-09-26 2004-06-11 Shipley Co Llc Coating compositions for use with an overcoated photoresist
JP3607903B2 (ja) * 2001-09-28 2005-01-05 Ｈｏｙａ株式会社 マスクブランク、不要膜除去方法及びその装置、並びにマスクブランク及びマスクの製造方法
US6999755B2 (en) 2002-03-12 2006-02-14 Welgate Corp. Method and device for providing information of unfinished call
JP4118585B2 (ja) * 2002-04-03 2008-07-16 Ｈｏｙａ株式会社 マスクブランクの製造方法
JP3973103B2 (ja) * 2003-03-31 2007-09-12 Ｈｏｙａ株式会社 マスクブランクスの製造方法
JP4029215B2 (ja) 2004-03-24 2008-01-09 株式会社村田製作所 位相調整回路およびこれを備えた発振器

Also Published As

Publication number Publication date
JP2015111312A (ja) 2015-06-18
JP2011040770A (ja) 2011-02-24
KR101047646B1 (ko) 2011-07-07
TW200837492A (en) 2008-09-16
KR100976977B1 (ko) 2010-08-23
US20050069787A1 (en) 2005-03-31
KR20070039909A (ko) 2007-04-13
CN100537053C (zh) 2009-09-09
TWI391779B (zh) 2013-04-01
KR20100085003A (ko) 2010-07-28
CN1983028A (zh) 2007-06-20
DE102004047355B4 (de) 2022-03-10
TWI387846B (zh) 2013-03-01
KR20080075816A (ko) 2008-08-19
TW200517786A (en) 2005-06-01
US7674561B2 (en) 2010-03-09
KR20070039908A (ko) 2007-04-13
CN1983028B (zh) 2012-07-25
KR20050031425A (ko) 2005-04-06
CN1605397A (zh) 2005-04-13
KR101045177B1 (ko) 2011-06-30

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