TWI383019B - A liquid resin composition for sealing an electronic component, and an electronic component device using the same - Google Patents
A liquid resin composition for sealing an electronic component, and an electronic component device using the same Download PDFInfo
- Publication number
- TWI383019B TWI383019B TW96137282A TW96137282A TWI383019B TW I383019 B TWI383019 B TW I383019B TW 96137282 A TW96137282 A TW 96137282A TW 96137282 A TW96137282 A TW 96137282A TW I383019 B TWI383019 B TW I383019B
- Authority
- TW
- Taiwan
- Prior art keywords
- electronic component
- resin composition
- liquid
- epoxy resin
- liquid resin
- Prior art date
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- 239000007788 liquid Substances 0.000 title claims description 95
- 239000011342 resin composition Substances 0.000 title claims description 75
- 238000007789 sealing Methods 0.000 title claims description 47
- 239000003822 epoxy resin Substances 0.000 claims description 51
- 229920000647 polyepoxide Polymers 0.000 claims description 51
- 239000004065 semiconductor Substances 0.000 claims description 49
- -1 diterpene compound Chemical class 0.000 claims description 45
- 239000002245 particle Substances 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 31
- 239000011256 inorganic filler Substances 0.000 claims description 17
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 17
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 claims description 17
- 239000004848 polyfunctional curative Substances 0.000 claims description 14
- 150000004982 aromatic amines Chemical class 0.000 claims description 12
- 229930004069 diterpene Natural products 0.000 claims description 10
- 150000007519 polyprotic acids Polymers 0.000 claims description 10
- 150000001463 antimony compounds Chemical group 0.000 claims description 7
- 125000003118 aryl group Chemical group 0.000 claims description 6
- 150000001622 bismuth compounds Chemical class 0.000 claims description 6
- 125000001931 aliphatic group Chemical group 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 150000004141 diterpene derivatives Chemical class 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 description 26
- 238000012360 testing method Methods 0.000 description 18
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 14
- 229920001971 elastomer Polymers 0.000 description 14
- 239000001257 hydrogen Substances 0.000 description 14
- 229910052739 hydrogen Inorganic materials 0.000 description 14
- 229920005989 resin Polymers 0.000 description 14
- 239000011347 resin Substances 0.000 description 14
- 239000005060 rubber Substances 0.000 description 14
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 13
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 12
- 230000000694 effects Effects 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 11
- OAKJQQAXSVQMHS-UHFFFAOYSA-N hydrazine Substances NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 11
- 238000011156 evaluation Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- DIOQZVSQGTUSAI-UHFFFAOYSA-N n-butylhexane Natural products CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 10
- 229910000679 solder Inorganic materials 0.000 description 10
- 239000004094 surface-active agent Substances 0.000 description 10
- 150000001412 amines Chemical class 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 9
- 239000007822 coupling agent Substances 0.000 description 9
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 8
- 229910000420 cerium oxide Inorganic materials 0.000 description 8
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 8
- PISLZQACAJMAIO-UHFFFAOYSA-N 2,4-diethyl-6-methylbenzene-1,3-diamine Chemical compound CCC1=CC(C)=C(N)C(CC)=C1N PISLZQACAJMAIO-UHFFFAOYSA-N 0.000 description 7
- 239000002253 acid Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 7
- YLQWCDOCJODRMT-UHFFFAOYSA-N fluoren-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3C2=C1 YLQWCDOCJODRMT-UHFFFAOYSA-N 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 239000011148 porous material Substances 0.000 description 7
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 6
- 238000011049 filling Methods 0.000 description 6
- 150000003304 ruthenium compounds Chemical class 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N toluene Substances CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 235000014113 dietary fatty acids Nutrition 0.000 description 5
- 239000000194 fatty acid Substances 0.000 description 5
- 229930195729 fatty acid Natural products 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 5
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 229920000058 polyacrylate Polymers 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 239000013585 weight reducing agent Substances 0.000 description 5
- 229930185605 Bisphenol Natural products 0.000 description 4
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 description 4
- 150000008065 acid anhydrides Chemical class 0.000 description 4
- 229920000800 acrylic rubber Polymers 0.000 description 4
- 150000001450 anions Chemical class 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000011258 core-shell material Substances 0.000 description 4
- 238000001879 gelation Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 4
- 230000035699 permeability Effects 0.000 description 4
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 4
- RUEBPOOTFCZRBC-UHFFFAOYSA-N (5-methyl-2-phenyl-1h-imidazol-4-yl)methanol Chemical compound OCC1=C(C)NC(C=2C=CC=CC=2)=N1 RUEBPOOTFCZRBC-UHFFFAOYSA-N 0.000 description 3
- 229910017944 Ag—Cu Inorganic materials 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerol Natural products OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- SJRJJKPEHAURKC-UHFFFAOYSA-N N-Methylmorpholine Chemical compound CN1CCOCC1 SJRJJKPEHAURKC-UHFFFAOYSA-N 0.000 description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 3
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 3
- 239000007983 Tris buffer Substances 0.000 description 3
- 125000003277 amino group Chemical group 0.000 description 3
- ZRSKSQHEOZFGLJ-UHFFFAOYSA-N ammonium adipate Chemical compound [NH4+].[NH4+].[O-]C(=O)CCCCC([O-])=O ZRSKSQHEOZFGLJ-UHFFFAOYSA-N 0.000 description 3
- 235000019293 ammonium adipate Nutrition 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 125000003700 epoxy group Chemical group 0.000 description 3
- 150000008376 fluorenones Polymers 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- 238000005470 impregnation Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 235000013824 polyphenols Nutrition 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 125000003396 thiol group Chemical group [H]S* 0.000 description 3
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 2
- FRASJONUBLZVQX-UHFFFAOYSA-N 1,4-naphthoquinone Chemical compound C1=CC=C2C(=O)C=CC(=O)C2=C1 FRASJONUBLZVQX-UHFFFAOYSA-N 0.000 description 2
- NADHCXOXVRHBHC-UHFFFAOYSA-N 2,3-dimethoxycyclohexa-2,5-diene-1,4-dione Chemical compound COC1=C(OC)C(=O)C=CC1=O NADHCXOXVRHBHC-UHFFFAOYSA-N 0.000 description 2
- LBIHNTAFJVHBLJ-UHFFFAOYSA-N 3-(triethoxymethyl)undec-1-ene Chemical compound C(=C)C(C(OCC)(OCC)OCC)CCCCCCCC LBIHNTAFJVHBLJ-UHFFFAOYSA-N 0.000 description 2
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 2
- PLIKAWJENQZMHA-UHFFFAOYSA-N 4-aminophenol Chemical compound NC1=CC=C(O)C=C1 PLIKAWJENQZMHA-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 2
- 229920000459 Nitrile rubber Polymers 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 239000005062 Polybutadiene Substances 0.000 description 2
- 229920001214 Polysorbate 60 Polymers 0.000 description 2
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 2
- 229920006311 Urethane elastomer Polymers 0.000 description 2
- UUQQGGWZVKUCBD-UHFFFAOYSA-N [4-(hydroxymethyl)-2-phenyl-1h-imidazol-5-yl]methanol Chemical compound N1C(CO)=C(CO)N=C1C1=CC=CC=C1 UUQQGGWZVKUCBD-UHFFFAOYSA-N 0.000 description 2
- UMHKOAYRTRADAT-UHFFFAOYSA-N [hydroxy(octoxy)phosphoryl] octyl hydrogen phosphate Chemical compound CCCCCCCCOP(O)(=O)OP(O)(=O)OCCCCCCCC UMHKOAYRTRADAT-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 125000002723 alicyclic group Chemical group 0.000 description 2
- 239000004844 aliphatic epoxy resin Substances 0.000 description 2
- 150000005215 alkyl ethers Chemical class 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Natural products C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 239000013065 commercial product Substances 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000012792 core layer Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000000539 dimer Substances 0.000 description 2
- ZZTCPWRAHWXWCH-UHFFFAOYSA-N diphenylmethanediamine Chemical compound C=1C=CC=CC=1C(N)(N)C1=CC=CC=C1 ZZTCPWRAHWXWCH-UHFFFAOYSA-N 0.000 description 2
- 238000006735 epoxidation reaction Methods 0.000 description 2
- 125000002485 formyl group Chemical class [H]C(*)=O 0.000 description 2
- 235000011187 glycerol Nutrition 0.000 description 2
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 150000004965 peroxy acids Chemical class 0.000 description 2
- 229920002857 polybutadiene Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000011164 primary particle Substances 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 2
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 2
- 239000002516 radical scavenger Substances 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 2
- 230000004580 weight loss Effects 0.000 description 2
- PIBBBGRPSHLONB-UHFFFAOYSA-N (2,3-dimethylphenyl)hydrazine Chemical compound CC1=CC=CC(NN)=C1C PIBBBGRPSHLONB-UHFFFAOYSA-N 0.000 description 1
- CCHJMGDYNLOYKM-UHFFFAOYSA-N (2,6-dimethylphenyl)hydrazine Chemical compound CC1=CC=CC(C)=C1NN CCHJMGDYNLOYKM-UHFFFAOYSA-N 0.000 description 1
- ANBBCZAIOXDZPV-UHFFFAOYSA-N 1,1,1-trimethoxy-2-methyldecane Chemical compound CC(C(OC)(OC)OC)CCCCCCCC ANBBCZAIOXDZPV-UHFFFAOYSA-N 0.000 description 1
- GCRPVOXKTYILII-UHFFFAOYSA-N 1,2,3-tridodecyl-4-propan-2-ylbenzene Chemical compound CCCCCCCCCCCCC1=CC=C(C(C)C)C(CCCCCCCCCCCC)=C1CCCCCCCCCCCC GCRPVOXKTYILII-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- 229940005561 1,4-benzoquinone Drugs 0.000 description 1
- GMQDWBMBWOJEQO-UHFFFAOYSA-N 1-N,1-N'-dihydroxycyclohexane-1,1-dicarboxamide Chemical compound C1(CCCCC1)(C(=O)NO)C(=O)NO GMQDWBMBWOJEQO-UHFFFAOYSA-N 0.000 description 1
- FBHPRUXJQNWTEW-UHFFFAOYSA-N 1-benzyl-2-methylimidazole Chemical compound CC1=NC=CN1CC1=CC=CC=C1 FBHPRUXJQNWTEW-UHFFFAOYSA-N 0.000 description 1
- XZKLXPPYISZJCV-UHFFFAOYSA-N 1-benzyl-2-phenylimidazole Chemical compound C1=CN=C(C=2C=CC=CC=2)N1CC1=CC=CC=C1 XZKLXPPYISZJCV-UHFFFAOYSA-N 0.000 description 1
- SMLNDVNTPWRZJH-UHFFFAOYSA-N 1-chloro-4-(trimethoxymethyl)dodecane Chemical compound ClCCCC(C(OC)(OC)OC)CCCCCCCC SMLNDVNTPWRZJH-UHFFFAOYSA-N 0.000 description 1
- CRSBERNSMYQZNG-UHFFFAOYSA-N 1-dodecene Chemical compound CCCCCCCCCCC=C CRSBERNSMYQZNG-UHFFFAOYSA-N 0.000 description 1
- YTPFRRRNIYVFFE-UHFFFAOYSA-N 2,2,3,3,5,5-hexamethyl-1,4-dioxane Chemical compound CC1(C)COC(C)(C)C(C)(C)O1 YTPFRRRNIYVFFE-UHFFFAOYSA-N 0.000 description 1
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- GCZWJRLXIPVNLU-UHFFFAOYSA-N 2,2-dimethoxy-3-methylundecane Chemical compound CC(C(OC)(OC)C)CCCCCCCC GCZWJRLXIPVNLU-UHFFFAOYSA-N 0.000 description 1
- ZEGDFCCYTFPECB-UHFFFAOYSA-N 2,3-dimethoxy-1,4-benzoquinone Natural products C1=CC=C2C(=O)C(OC)=C(OC)C(=O)C2=C1 ZEGDFCCYTFPECB-UHFFFAOYSA-N 0.000 description 1
- JGYUBHGXADMAQU-UHFFFAOYSA-N 2,4,6-triethylbenzene-1,3-diamine Chemical compound CCC1=CC(CC)=C(N)C(CC)=C1N JGYUBHGXADMAQU-UHFFFAOYSA-N 0.000 description 1
- AHDSRXYHVZECER-UHFFFAOYSA-N 2,4,6-tris[(dimethylamino)methyl]phenol Chemical compound CN(C)CC1=CC(CN(C)C)=C(O)C(CN(C)C)=C1 AHDSRXYHVZECER-UHFFFAOYSA-N 0.000 description 1
- HGXVKAPCSIXGAK-UHFFFAOYSA-N 2,4-diethyl-6-methylbenzene-1,3-diamine;4,6-diethyl-2-methylbenzene-1,3-diamine Chemical compound CCC1=CC(CC)=C(N)C(C)=C1N.CCC1=CC(C)=C(N)C(CC)=C1N HGXVKAPCSIXGAK-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- MFAWEYJGIGIYFH-UHFFFAOYSA-N 2-[4-(trimethoxymethyl)dodecoxymethyl]oxirane Chemical compound C(C1CO1)OCCCC(C(OC)(OC)OC)CCCCCCCC MFAWEYJGIGIYFH-UHFFFAOYSA-N 0.000 description 1
- JTXMVXSTHSMVQF-UHFFFAOYSA-N 2-acetyloxyethyl acetate Chemical compound CC(=O)OCCOC(C)=O JTXMVXSTHSMVQF-UHFFFAOYSA-N 0.000 description 1
- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical compound NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 description 1
- YTWBFUCJVWKCCK-UHFFFAOYSA-N 2-heptadecyl-1h-imidazole Chemical compound CCCCCCCCCCCCCCCCCC1=NC=CN1 YTWBFUCJVWKCCK-UHFFFAOYSA-N 0.000 description 1
- VOQDCMULDZDDLP-UHFFFAOYSA-N 2-methoxy-2,3-dimethyloxane Chemical compound CC1C(OCCC1)(C)OC VOQDCMULDZDDLP-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- AAMHBRRZYSORSH-UHFFFAOYSA-N 2-octyloxirane Chemical compound CCCCCCCCC1CO1 AAMHBRRZYSORSH-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- RLQZIECDMISZHS-UHFFFAOYSA-N 2-phenylcyclohexa-2,5-diene-1,4-dione Chemical compound O=C1C=CC(=O)C(C=2C=CC=CC=2)=C1 RLQZIECDMISZHS-UHFFFAOYSA-N 0.000 description 1
- VKEIPALYOJMDAC-UHFFFAOYSA-N 3,3,3-trichloroprop-1-ene Chemical compound ClC(Cl)(Cl)C=C VKEIPALYOJMDAC-UHFFFAOYSA-N 0.000 description 1
- RQEOBXYYEPMCPJ-UHFFFAOYSA-N 4,6-diethyl-2-methylbenzene-1,3-diamine Chemical compound CCC1=CC(CC)=C(N)C(C)=C1N RQEOBXYYEPMCPJ-UHFFFAOYSA-N 0.000 description 1
- FXPCFGZWQHOKJF-UHFFFAOYSA-N 4-(1,1-diethoxyethyl)dodecan-1-amine Chemical compound NCCCC(C(OCC)(OCC)C)CCCCCCCC FXPCFGZWQHOKJF-UHFFFAOYSA-N 0.000 description 1
- SXPGQGNWEWPWQZ-UHFFFAOYSA-N 4-(triethoxymethyl)dodecan-1-amine Chemical compound NCCCC(C(OCC)(OCC)OCC)CCCCCCCC SXPGQGNWEWPWQZ-UHFFFAOYSA-N 0.000 description 1
- GNPSQUCXOBDIDY-UHFFFAOYSA-N 4-(trimethoxymethyl)dodecane Chemical compound C(CCCCCCC)C(C(OC)(OC)OC)CCC GNPSQUCXOBDIDY-UHFFFAOYSA-N 0.000 description 1
- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 description 1
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- JZHKIUBMQMDQRG-UHFFFAOYSA-N C(=C)C(C(OC)(OC)OC)CCCCCCCC Chemical compound C(=C)C(C(OC)(OC)OC)CCCCCCCC JZHKIUBMQMDQRG-UHFFFAOYSA-N 0.000 description 1
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- LSKVKQVMUWAMRM-UHFFFAOYSA-K cerium(3+) pentanoate Chemical group [Ce+3].CCCCC([O-])=O.CCCCC([O-])=O.CCCCC([O-])=O LSKVKQVMUWAMRM-UHFFFAOYSA-K 0.000 description 1
- PDPGNBUFSAIPFG-UHFFFAOYSA-K cerium(3+);heptanoate Chemical group [Ce+3].CCCCCCC([O-])=O.CCCCCCC([O-])=O.CCCCCCC([O-])=O PDPGNBUFSAIPFG-UHFFFAOYSA-K 0.000 description 1
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- VGBWDOLBWVJTRZ-UHFFFAOYSA-K cerium(3+);triacetate Chemical group [Ce+3].CC([O-])=O.CC([O-])=O.CC([O-])=O VGBWDOLBWVJTRZ-UHFFFAOYSA-K 0.000 description 1
- FXNONNRUNQPNLF-UHFFFAOYSA-N cerium;2-ethylhexanoic acid Chemical group [Ce].CCCCC(CC)C(O)=O.CCCCC(CC)C(O)=O.CCCCC(CC)C(O)=O FXNONNRUNQPNLF-UHFFFAOYSA-N 0.000 description 1
- WXANAQMHYPHTGY-UHFFFAOYSA-N cerium;ethyne Chemical compound [Ce].[C-]#[C] WXANAQMHYPHTGY-UHFFFAOYSA-N 0.000 description 1
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- VDQQXEISLMTGAB-UHFFFAOYSA-N chloramine T Chemical compound [Na+].CC1=CC=C(S(=O)(=O)[N-]Cl)C=C1 VDQQXEISLMTGAB-UHFFFAOYSA-N 0.000 description 1
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- 229940126214 compound 3 Drugs 0.000 description 1
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
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- DIOQZVSQGTUSAI-NJFSPNSNSA-N decane Chemical class CCCCCCCCC[14CH3] DIOQZVSQGTUSAI-NJFSPNSNSA-N 0.000 description 1
- LBDKAALDDAKVBS-UHFFFAOYSA-N decane urea Chemical compound NC(N)=O.CCCCCCCCCC LBDKAALDDAKVBS-UHFFFAOYSA-N 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- CKKXWJDFFQPBQL-UAIGNFCESA-N diazanium;(z)-but-2-enedioate Chemical compound [NH4+].[NH4+].[O-]C(=O)\C=C/C([O-])=O CKKXWJDFFQPBQL-UAIGNFCESA-N 0.000 description 1
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- IZRTVYMPRPTBAI-UHFFFAOYSA-K dibenzoyloxybismuthanyl benzoate Chemical compound [Bi+3].[O-]C(=O)C1=CC=CC=C1.[O-]C(=O)C1=CC=CC=C1.[O-]C(=O)C1=CC=CC=C1 IZRTVYMPRPTBAI-UHFFFAOYSA-K 0.000 description 1
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- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
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- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-J diphosphate(4-) Chemical compound [O-]P([O-])(=O)OP([O-])([O-])=O XPPKVPWEQAFLFU-UHFFFAOYSA-J 0.000 description 1
- 235000011180 diphosphates Nutrition 0.000 description 1
- NJLLQSBAHIKGKF-UHFFFAOYSA-N dipotassium dioxido(oxo)titanium Chemical compound [K+].[K+].[O-][Ti]([O-])=O NJLLQSBAHIKGKF-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- POULHZVOKOAJMA-UHFFFAOYSA-M dodecanoate Chemical compound CCCCCCCCCCCC([O-])=O POULHZVOKOAJMA-UHFFFAOYSA-M 0.000 description 1
- 238000007720 emulsion polymerization reaction Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- RMBPEFMHABBEKP-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2C3=C[CH]C=CC3=CC2=C1 RMBPEFMHABBEKP-UHFFFAOYSA-N 0.000 description 1
- 229910052839 forsterite Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 150000002429 hydrazines Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- NYMPGSQKHIOWIO-UHFFFAOYSA-N hydroxy(diphenyl)silicon Chemical compound C=1C=CC=CC=1[Si](O)C1=CC=CC=C1 NYMPGSQKHIOWIO-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000004245 inosinic acid Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 1
- 230000009916 joint effect Effects 0.000 description 1
- 229910021644 lanthanide ion Inorganic materials 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- UJNZOIKQAUQOCN-UHFFFAOYSA-N methyl(diphenyl)phosphane Chemical compound C=1C=CC=CC=1P(C)C1=CC=CC=C1 UJNZOIKQAUQOCN-UHFFFAOYSA-N 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- NXPPAOGUKPJVDI-UHFFFAOYSA-N naphthalene-1,2-diol Chemical compound C1=CC=CC2=C(O)C(O)=CC=C21 NXPPAOGUKPJVDI-UHFFFAOYSA-N 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N o-biphenylenemethane Natural products C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 1
- SWMBQMGPRYJSCI-UHFFFAOYSA-N octylphosphane Chemical compound CCCCCCCCP SWMBQMGPRYJSCI-UHFFFAOYSA-N 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 description 1
- 125000005702 oxyalkylene group Chemical group 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- AQSJGOWTSHOLKH-UHFFFAOYSA-N phosphite(3-) Chemical compound [O-]P([O-])[O-] AQSJGOWTSHOLKH-UHFFFAOYSA-N 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 description 1
- 229920001921 poly-methyl-phenyl-siloxane Polymers 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 150000008442 polyphenolic compounds Chemical class 0.000 description 1
- 229920006264 polyurethane film Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 1
- 229960001755 resorcinol Drugs 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229940116351 sebacate Drugs 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- APSBXTVYXVQYAB-UHFFFAOYSA-M sodium docusate Chemical group [Na+].CCCCC(CC)COC(=O)CC(S([O-])(=O)=O)C(=O)OCC(CC)CCCC APSBXTVYXVQYAB-UHFFFAOYSA-M 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229920003048 styrene butadiene rubber Polymers 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000004448 titration Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- 235000013337 tricalcium citrate Nutrition 0.000 description 1
- MDCWDBMBZLORER-UHFFFAOYSA-N triphenyl borate Chemical compound C=1C=CC=CC=1OB(OC=1C=CC=CC=1)OC1=CC=CC=C1 MDCWDBMBZLORER-UHFFFAOYSA-N 0.000 description 1
- BIKXLKXABVUSMH-UHFFFAOYSA-N trizinc;diborate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]B([O-])[O-].[O-]B([O-])[O-] BIKXLKXABVUSMH-UHFFFAOYSA-N 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- XAEWLETZEZXLHR-UHFFFAOYSA-N zinc;dioxido(dioxo)molybdenum Chemical compound [Zn+2].[O-][Mo]([O-])(=O)=O XAEWLETZEZXLHR-UHFFFAOYSA-N 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
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Description
本發明係關於電子零件封閉用液狀樹脂組成物及使用其之電子零件裝置。
向來於電晶體、IC等電子零件裝置之元件封閉方面,就生產性、成本面等之考量,係以用樹脂封閉為主流,廣泛使用著環氧樹脂組成物。其理由在於環氧樹脂於作業性、成形性、電氣特性、耐濕性、耐熱性、機械特性、與內裝(inside)品之接合性等諸特性有均衡性之故。於COB(Chip on Board:板上晶片封裝)、COG(Chip on Glass:玻璃上晶片封裝)、TCP(Tape Carrier Package:輸送膠帶封裝體)等之裸晶構裝之半導體裝置中,電子零件封閉用液狀樹脂組成物廣泛地被使用作為封閉材。又,於將半導體元件直接進行突塊連接於以陶瓷、玻璃/環氧樹脂、玻璃/醯亞胺樹脂或聚醯亞胺膜等作為基板之配線基板上所成之半導體裝置(覆晶(flip chip)方式)中,電子零件封閉用液狀樹脂組成物係使用作為用以填充突塊連接之半導體元件與配線基板之間隙(gap)的填底材。此等電子零件封閉用液狀樹脂組成物發揮著保護電子零件免於溫濕度、機械性外力等之影響的重要功能。
作為電子零件封閉用樹脂組成物迄今多使用酸酐系之硬化劑。其理由可舉出例如:低黏度之液狀物容易取得、藉由硬化促進劑之選擇可比較容易地調整硬化性。然而,
於用酸酐系硬化劑之場合硬化物之耐濕性差為其缺點,就提高耐濕性之觀點考量,使用胺系硬化劑作為硬化劑所成之填底材已日漸成為主流(例如,參照日本特開2005-350618號公報)。
然而,半導體之進步至為顯著,於進行突塊連接之覆晶方式中,隨著突塊數之增加,突塊之間距變窄,突塊之高度變低,其結果,導致朝向間距狹窄化進展著。又,隨著半導體元件之高度密集化,晶片之尺寸亦日益變大。因而,作為填底材,其於狹窄間距中可大面積地流動之特性備受期盼。又,由於隨著間距窄化使得突塊數增加且使突塊之間距亦變窄,故填底材之流動路徑亦變得複雜,致容易產生孔隙(void)。再者,於填底材填充於配線基板與半導體元件之間隙後,會滲出特定量至半導體元件周圍,形成填角(fillet),若填角不均一,於溫度循環時等,於填角處會產生裂痕,或與配線基板或半導體元件發生剝離之情形。此種孔隙之產生與形狀為不均一的填角之形成,會嚴重地影響到以覆晶構裝所成之半導體裝置之可靠性。尤其有關孔隙方面,人們業已得知於填充填底材後,若迅速地硬化可有效地減低孔隙之產生。
如前述般,使用以往的酸酐系硬化劑可比較容易調整硬化性,而使用胺系硬化劑通常硬化性之調整困難,若加速其硬化性會導致接合性降低之問題。
本發明之目的在於提供在狹窄間距中之流動性良好、不會產生孔隙、填角形成性優異之電子零件封閉用液狀樹
脂組成物,及具備有用其封閉之電子零件所構成的耐濕性、耐衝擊性優異之可靠性高的電子零件裝置。
為解決此等問題,本發明者等刻意進行探討之結果,發現只要使用含有液狀芳香族胺之硬化劑與平均粒徑未滿2μm之醯肼化合物即可,本發明於焉得以完成。
本發明係關於(1):一種電子零件封閉用液狀樹脂組成物,其特徵在於,含有:(A)含有液狀環氧樹脂之環氧樹脂、(B)含有液狀芳香族胺之硬化劑、(C)平均粒徑為未滿2μm之醯肼化合物及(D)平均粒徑為未滿2μm之無機填充劑。
又,本發明係關於(2):如(1)所記載之電子零件封閉用液狀樹脂組成物,其中,前述醯肼化合物為選自碳數2~10之脂肪族多元酸二醯肼化合物及碳數8~15之芳香族多元酸二醯肼化合物之至少1種。
又,本發明係關於(3):一種電子零件裝置,其特徵在於,係具備藉由前述(1)或(2)所記載之電子零件封閉用液狀樹脂組成物封閉之電子零件的電子零件裝置。
又,本發明係關於(4):如(3)所記載之電子零件裝置,其中,前述電子零件為半導體元件,係使該半導體元件直接突塊(bump)連接於配線基板上所成者。
又,本發明係關於(5):如(4)所記載之電子零件裝置,前述突塊為不含鉛之金屬。
又,本發明係關於(6):如(3)~(5)中任一項
所記載之電子零件裝置,其中,前述電子零件之長邊之長度為5mm以上,且構成電子零件裝置之配線基板與該電子零件之突塊連接面之距離為60μm以下。
又,本發明係關於(7):如(3)~(6)中任一項所記載之電子零件裝置,其中,前述電子零件之長邊之長度為5mm以上,且該電子零件為具有介電率3.0以下之介電體層之半導體元件。
依據本發明可提供於狹窄間隙之流動性良好,不會發生孔隙,填角(fillet)形成性優異之電子零件封閉用液狀樹脂組成物,及藉此封閉之耐濕性、耐熱衝擊性優異之高可靠性的電子零件裝置。
本發明之電子零件封閉用液狀樹脂組成物,如實施例中所示般,藉由縮短凝膠時間(gel time),於抑制成形時之孔隙產生之同時亦可使硬化溫度低溫化,即使於吸濕後與各種基材之接合力亦強,故用此電子零件封閉用液狀樹脂組成物封閉電子零件,可得到晶片翹曲小且可靠性高的電子零件裝置,因而甚有工業價值。
本發明之電子零件封閉用液狀樹脂組成物,其特徵在於,含有:(A)含有液狀環氧樹脂之環氧樹脂、(B)含有液狀芳香族胺之硬化劑、(C)平均粒徑為未滿2μm之醯肼及(D)平均粒徑為未滿2μm之無機填充劑。
本發明中所用之(A)環氧樹脂為含有液狀環氧樹脂
者。作為液狀環氧樹脂,只要是常溫下為液狀皆可,並無特別限定,可用電子零件封閉用液狀樹脂組成物中通常所使用之液狀環氧樹脂。作為液狀環氧樹脂之具體例可舉出:雙酚A、雙酚F、雙酚AD、雙酚S、加氫雙酚A等之二縮水甘油基醚型環氧樹脂;以鄰甲酚酚醛清漆型環氧樹脂為代表之酚類與醛類的酚醛清漆樹脂經環氧化者;由間苯二酚、焦棓酚等低分子多元苯酚與環氧氯丙烷反應得到之縮水甘油基醚型環氧樹脂;由鄰苯二甲酸、二聚物酸等多元酸與環氧氯丙烷反應得到之縮水甘油基酯型環氧樹脂;由對胺基酚、二胺基二苯基甲烷、異氰酸等胺化合物與環氧氯丙烷反應得到之縮水甘油基胺型環氧樹脂;將烯烴鍵藉由過醋酸等之過氧酸進行氧化得到之線狀脂肪族環氧樹脂;脂環族環氧樹脂等。此等液狀環氧樹脂可1種單獨使用,亦可組合2種以上使用。
上述液狀環氧樹脂之環氧當量以50~500之範圍為佳。
又,上述液狀環氧樹脂中,就流動性之觀點考量以雙酚型環氧樹脂為佳,就耐熱性、接合性及流動性之觀點考量以縮水甘油基型環氧樹脂為佳。此等較佳之液狀環氧樹脂,可單獨使用任1種,亦可組合2種以上使用。此等較佳之液狀環氧樹脂之調配量,為發揮上述性能,以相對於
液狀環氧樹脂之全量為20重量%以上為佳,以30質量%以上為更佳,尤以50質量%以上為特佳。
又,只要於可達成本發明之效果的範圍內,(A)環氧樹脂亦可含有固體環氧樹脂,該固體環氧樹脂之調配量就成形時之流動性的觀點考量,以相對於環氧樹脂全量為20重量%以下為佳。
又,本發明中,(A)環氧樹脂中所含有之水解性氯量由於對IC等元件上之鋁配線腐蝕有影響故以較少為佳,為得到耐濕性優異之電子零件封閉用液狀樹脂組成物,該水解性氯量以500ppm以下為佳。此處,所謂「水解性氯量」,係指將環氧樹脂1g溶解於二噁烷30ml中,添加1N-KOH甲醇溶液5ml回流30分鐘後,以電位差滴定求出之值訂定。
本發明中所用之(B)硬化劑為含有液狀芳香族胺者。作為液狀芳香族胺,只要是常溫下為液狀之具有芳香環的胺皆可,並無特別限定。作為液狀芳香族胺之具體例可舉出:二乙基甲苯二胺、1-甲基-3,5-二乙基-2,4-二胺基苯、1-甲基-3,5-二乙基-2,6-二胺基苯、1,3,5-三乙基-2,6-二胺基苯、3,3’-二乙基-4,4’-二胺基二苯甲烷、3,5,3’,5’-四甲基-4,4’-二胺基二苯甲烷等。此等液狀芳香族胺化合物之市售品可舉出:艾匹秋阿W、艾匹秋阿Z(油化殼牌環氧(股)製,商品名)、卡亞哈德A-A、卡亞哈德A-B、卡亞哈德A-S(日本化藥(股)製,商品名)、托托胺
HM-205(東都化成(股)製,商品名)、阿迭卡哈多拿EH-101(旭電化工業(股)製,商品名)、艾波密克Q-640、艾波密克Q-643(三井化學(股)製,商品名)、DETDA80(Lonza公司製,商品名)等。
上述液狀芳香族胺可1種單獨使用,亦可組合2種以上使用。
上述液狀芳香族胺之中,就保存安定性之考量,以3,3’-二乙基-4,4’-二胺基二苯甲烷、二乙基甲苯二胺為佳。作為二乙基甲苯二胺可舉出:3,5-二乙基甲苯-2,4-二胺、3,5-二乙基甲苯-2,6-二胺、此等可1種單獨使用,亦可使用兩者之混合物,以使用含有3,5-二乙基甲苯-2,4-二胺60重量%以上之混合物為佳。
又,只要是可達成本發明之效果的範圍內,(B)硬化劑亦可使用含有苯酚系硬化劑、酸酐系硬化劑等之以往作為環氧樹脂用硬化劑使用者,亦可並用固體硬化劑。
液狀芳香族胺之含有量,為發揮其性能,較佳者為,相對於(B)硬化劑全量為60重量%以上,以80重量%以上為更佳。
又,(A)環氧樹脂與(B)硬化劑之當量比,亦即相對於(A)環氧樹脂中之環氧基數之(B)硬化劑中之反應基數的比(硬化劑中之活性氫數+羥基數+酸酐基數/環氧樹脂中之環氧基數)並無特別限制,為抑制其各自之未反應部分於較低之程度,以0.7~1.6的範圍內為佳,以0.8~1.4的範圍內為更佳,以0.9~1.2的範圍內為特
佳。
本發明中平均粒徑為未滿2μm之醯肼化合物之使用乃必須者,藉此,可促進(A)含有液狀環氧樹脂之環氧樹脂與(B)含有液狀芳香族胺之硬化劑之間的反應,可得到對基板表面之抗焊劑(solder resist)、銅配線或半導體晶片表面之聚醯亞胺膜、氮化矽或氧化矽等之鈍化膜等之接合性良好之電子零件封閉用液狀樹脂組成物。
本發明中所用之(C)醯肼化合物為使單元酸或多元酸之羥基以肼基取代之化合物。作為此等醯肼化合物之具體例,可舉出:醋酸醯肼、丙酸醯肼、丁酸醯肼、戊酸醯肼、己酸醯肼、庚酸醯肼、辛酸醯肼等之脂肪族單元酸醯肼化合物;琥珀酸二醯肼、順式丁烯二酸二醯肼、己二酸二醯肼、戊二酸二醯肼、癸二酸二醯肼、十二烷酸二醯肼、環己烷二羧酸二醯肼等之脂肪族二元酸二醯肼化合物;苯甲酸醯肼等之芳香族單元酸醯肼化合物;鄰苯二甲酸二醯肼、間苯二甲酸二醯肼、對苯二甲酸二醯肼等之芳香族多元酸二醯肼化合物;等。
上述醯肼化合物可1種單獨使用,亦可組合2種以上使用。
上述醯肼化合物之中,就硬化促進之觀點考量,較佳者為,碳數2~10之脂肪族多元酸二醯肼化合物或碳數8~15之芳香族多元酸二醯肼化合物。
又,本發明中(C)醯肼化合物之平均粒徑為未滿2
μm乃重要者。藉由前述平均粒徑定為未滿2μm,可於較少之調配量下發揮充分的硬化促進作用,使電子零件封閉用液狀樹脂組成物之硬化性良好,而可得到可靠性高的電子零件裝置。前述平均粒徑以0.1~2μm為佳,以0.5~1.8μm為更佳。
又,(C)醯肼化合物之最大粒徑,就反應性之觀點考量以20μm以下為佳,以5~15μm為更佳。
又,於用本發明之電子零件封閉用液狀樹脂組成物作為填底材之場合,由於配線基板與電子零件之突塊連接面的距離(間隙)狹窄,故(C)醯肼化合物之平均粒徑以間隙之1/20以下為佳,(C)醯肼化合物之最大粒徑以間隙之1/2以下為佳。
又,本發明中,平均粒徑及最大粒徑之測定可藉由例如雷射光折射法等以粒度分佈測得,可求出其重量平均值作為平均粒徑。
(C)醯肼化合物之調配量,只要是可達成硬化促進作用的量皆可,並無特別限定,於(B)硬化劑的活性氫當量與(C)醯肼化合物的活性氫當量之合計為1當量之場合,相對於(A)環氧樹1當量,(C)醯肼化合物之活性氫當量以0.02~0.3當量的範圍為佳,以0.05~0.20當量的範圍為更佳。
本發明之電子零件封閉用液狀樹脂組成物亦可含有前述(C)醯肼化合物以外之硬化促進劑。作為硬化促進劑
,只要是可促進(A)含有液狀環氧樹脂之環氧樹脂與(B)含有液狀芳香族胺之硬化劑之間的反應者皆可,並無特別限制,可用以往所公知的硬化促進劑。作為硬化促進劑之具體例可舉出:1,8-二吖雙環(5,4,0)十一烯-7、1,5-二吖雙環(4,3,0)壬烯、5,6-二丁基胺基-1,8-二吖雙環(5,4,0)十一烯-7等之環脒化合物;三乙二胺、苄基二甲胺、三乙醇胺、二甲基胺基乙醇、三(二甲基胺基甲基)酚等之三級胺化合物;2-甲基咪唑、2-乙基-4-甲基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑、1-苄基-2-苯基咪唑、1-苄基-2-甲基咪唑、2-苯基-4,5-二羥甲基咪唑、2-苯基-4-甲基-5-羥甲基咪唑、2,4-二胺基-6-(2’-甲基咪唑基-(1’))-乙基-s-三嗪、2-十七基咪唑等之咪唑化合物;三丁基膦等之三烷基膦;二甲基苯基膦等之二烷基芳基膦;甲基二苯基膦等之烷基二芳基膦;三苯基膦、烷基取代之三苯基膦等之有機膦類;及對此等化合物附加順式丁烯二酸酐、或附加1,4-苯醌、2,5-甲苯醌、1,4-萘醌、2,3-二甲基苯醌、2,6-二甲基苯醌、2,3-二甲氧基-5-甲基-1,4-苯醌、2,3-二甲氧基-1,4-苯醌、苯基-1,4-苯醌等之醌化合物、或附加二偶氮苯基甲烷、苯酚樹脂等之有π鍵之化合物所成之具有分子內分極之化合物;及此等之衍生物;乃至2-乙基-4-甲基咪唑四苯基硼酸酯、N-甲基嗎福啉四苯基盆酸酯等之苯基硼酸鹽等。
上述硬化促進劑可1種單獨使用,亦可組合2種以上使用。
又,作為具有潛在性的硬化促進劑可使用例如:具有由常溫為固體之具有胺基之化合物所構成的核心層、與由常溫為固體之環氧化合物所構成之外殼層的核殼粒子(味之素(股)製,商品名「阿米秋阿」)、胺分散於雙酚A型環氧樹脂及雙酚F型環氧樹脂中經微膠囊化者(旭化成化學品(股)製,商品名「諾巴秋阿」)等。
上述硬化促進劑中,就硬化促進作用與可靠性之均衡性的觀點考量,較佳者為咪唑化合物或胺分散於雙酚A型環氧樹脂及雙酚F型環氧樹脂中經微膠囊化者,作為咪唑化合物,更佳者為2-苯基-4,5-二羥甲基咪唑、2-苯基-4-甲基-5-羥甲基咪唑等之具有苯基及羥基作為取代基之咪唑化合物。
作為本發明中所使用之(D)無機填充劑,只要是電子零件封閉用液狀樹脂組成物中通常所使用者皆可,並無特別限制。作為(D)無機填充劑之具體例,可舉出例如:熔融二氧化矽、結晶二氧化矽等之二氧化矽、碳酸鈣、黏土、氧化鋁等之氧化鋁、氮化矽、碳化矽、氮化硼、矽酸鈣、鈦酸鉀、氮化鋁、氧化鈹、氧化鋯、鋯石、鎂橄欖石、塊滑石、尖晶石、富鋁紅柱石、氧化鈦等之粉體、或此等經球形化之珠子、玻璃纖維等。再者,作為有難燃效果之無機填充劑,可舉出:氫氧化鋁、氫氧化鎂、硼酸鋅、鉬酸鋅等。
上述無機填充劑可1種單獨使用,亦可組合2種以上
使用。
上述無機填充劑中熔融二氧化矽為較佳,就電子零件封閉用液狀樹脂組成物於狹窄間隙中的流動性、滲透性之觀點考量,以球形之氧化矽為更佳。
又,本發明中(D)無機填充劑之平均粒徑為未滿2μm為重要的。前述平均粒徑若為2μm以上則無機填充劑之分散性差,且電子零件封閉用液狀樹脂組成物於狹窄間隙中之流動性、滲透性降低,致產生孔隙(void)或未能充填之情形。前述平均粒徑以0.1μm以上、未滿2μm為佳,以0.5μm以上、1.5μm以下為更佳。又,於球形之氧化矽之場合,平均粒徑以0.3μm以上為佳,若未滿0.3μm,對電子零件封閉用液狀樹脂組成物之分散性有變差之傾向,且會賦予電子零件封閉用液狀樹脂組成物搖變性,致有流動特性變差之傾向。
(D)無機填充劑之調配量,以電子零件封閉用液狀樹脂組成物全體之20~90重量%的範圍為佳,以25~80重量%的範圍為更佳,尤以30~60重量%的範圍為特佳。前述調配量若未滿20重量%,則減低熱膨脹係數之效果會有降低之傾向,若超過90重量%,則電子零件封閉用液狀樹脂組成物之黏度會上昇,有導致流動性、滲透性降低及作業性降低之傾向。
於本發明之電子零件封閉用液狀樹脂組成物中,基於提高耐熱衝擊性、減低對於半導體元件之應力等觀點之考
量可調配以各種可撓劑。作為可撓劑並無特別限制,以橡膠粒子為佳,作為具體例可舉出:由苯乙烯-丁二烯橡膠(SBR)、腈-丁二烯橡膠(NBR)、丁二烯橡膠(BR)、胺基甲酸酯橡膠(UR)、丙烯酸橡膠(AR)等之橡膠所成之橡膠粒子。此等橡膠粒子之中就耐熱性、耐濕性之觀點考量以由丙烯酸橡膠所成之橡膠粒子為佳,以核殼型丙烯酸系聚合物,亦即核殼型丙烯酸橡膠粒子為更佳。
又,作為上述以外之橡膠粒子,較佳者可使用矽酮橡膠,具體例可舉出:直鏈狀之聚二甲基矽氧烷、聚甲基苯基矽氧烷、聚二苯基矽氧烷等之聚有機矽氧烷經交聯之矽酮橡膠粒子;矽酮橡膠粒子表面以矽酮樹脂被覆者;具有由藉由乳化聚合等得到之固體矽酮粒子所成之核心層與由丙烯酸樹脂等之有機聚合物所成之外殼層之核殼聚合物粒子;等。此等矽酮橡膠粒子之形狀可為無定形,亦可為球形,惟就電子零件封閉用液狀樹脂組成物之成形性的觀點考量以球形為佳。此等矽酮橡膠粒子可自東菱-道康寧矽利康(股)、信越化學工業(股)等取得市售品。
上述橡膠粒子之平均一次粒徑,以0.05μm以上、未滿5.0μm為佳,以0.1μm以上、2.0μm以下為更佳。前述平均一次粒徑若未滿0.05μm,則對電子零件封閉用液狀樹脂組成物之分散性有變差的傾向,若為5.0μm以上,應力減低效果會有降低的傾向,且電子零件封閉用液狀樹脂組成物於狹窄間隙中之流動性、滲透性降低,致產生孔隙(void)或未能充填之情形。
上述橡膠粒子之調配量,較佳者為自電子零件封閉用液狀樹脂組成物全體扣除(D)無機填充劑後之總量的1~30重量%之範圍,以2~20重量%之範圍為更佳。前述橡膠粒子之調配量若未滿1重量%則應力減低效果有降低的傾向,若超過30重量%則電子零件封閉用液狀樹脂組成物之黏度會上昇,致成形性(流動特性)有變差之傾向。
本發明之電子零件封閉用液狀樹脂組成物中,就減低成形時之產生孔隙與藉由提高對各種被附著體之潤濕性以提高接合力的觀點考量可調配各種界面活性劑。作為界面活性劑並無特別限制,以非離子性界面活性劑為佳,作為具體例可舉出:聚氧乙烯烷基醚、聚氧化烯烷基醚系、山梨糖醇酐脂肪酸酯系、聚氧乙烯山梨糖醇酐脂肪酸酯系、聚氧乙烯山梨糖醇脂肪酸酯系、甘油脂肪酸酯系、聚氧乙烯脂肪酸酯系、聚氧乙烯烷基胺系、烷基烷醇醯胺系、聚醚改質矽酮系、芳烷基改質矽酮系、聚酯改質矽酮系、聚丙烯酸系等之界面活性劑。上述界面活性劑可1種單獨使用,亦可組合2種以上使用。此等界面活性劑可自日本比克(股)、花王(股)等取得市售品。
又,亦可添加矽酮改質環氧樹脂作為界面活性劑。矽酮改質環氧樹脂可得自具有可和環氧基反應的官能基之有機矽氧烷與環氧樹脂的反應物。矽酮改質環氧樹脂以於常溫為液狀為佳。作為具有可和環氧基反應的官能基之有機
矽氧烷可舉出例如:在1分子中有1個以上之胺基、羧基、羥基、苯酚性羥基、硫醇基等的二甲基矽氧烷、二苯基矽氧烷、甲基苯基矽氧烷等。前述具有可和環氧基反應的官能基之有機矽氧烷的重量平均分子量以500~5000為佳。前述重量平均分子量若未滿500,與樹脂系之相溶性會過於良好致難以發揮作為添加劑之效果,若超過5000,由於與樹脂系會成為非相溶故矽酮改質環氧樹脂於成形時會發生分離滲出之情形,容易損及接合性與外觀。
作為用以得到矽酮改質環氧樹脂之環氧樹脂只要是與電子零件封閉用液狀樹脂組成物的樹脂系可相溶者皆可,並無特別限制,可使用電子零件封閉用液狀樹脂組成物中通常所使用之環氧樹脂。作為該環氧樹脂之具體例可舉出:藉由雙酚A、雙酚F、雙酚AD、雙酚S、萘二醇、加氫雙酚A等與環氧氯丙烷之反應得到之縮水甘油基型環氧樹脂;以鄰甲酚酚醛清漆型環氧樹脂為代表之苯酚類與醛類進行縮合或共縮合所得到之酚醛清漆樹脂經環氧化得到之酚醛清漆型環氧樹脂;藉由鄰苯二甲酸、二聚物酸等之多元酸與環氧氯丙烷之反應得到之縮水甘油基酯型環氧樹脂;藉由二胺基二苯基甲烷、異三聚氰酸等之聚胺與環氧氯丙烷之反應得到之縮水甘油基型環氧樹脂;使烯烴鍵以過醋酸等之過氧酸進行氧化得到之線性脂肪族環氧樹脂;脂環族環氧樹脂等。此等之中尤以常溫為液狀之環氧樹脂為佳。此等環氧樹脂可1種單獨使用,亦可組合2種以上使用。
上述界面活性劑之調配量,較佳者為在電子零件封閉用液狀樹脂組成物全體之0.01~1.5重量%的範圍,以0.05~1重量%的範圍為更佳。前述界面活性劑之調配量若未滿0.01重量%,則無法得到充分的添加效果,若超過1.5重量%,則硬化時會自硬化物表面滲出致接合力有降低之傾向。
本發明之電子零件封閉用液狀樹脂組成物中,視需要,為使樹脂與無機填充劑或樹脂與電子零件裝置之構成零件的界面接合強固化之目的,可調配以偶合劑。作為偶合劑並無特別限制,可用以往之公知者。作為偶合劑,並無特別限制,可用以往公知者。作為偶合劑可舉出:具有1級及/或2級及/或3級胺基之矽烷化合物、環氧矽烷、硫醇矽烷、烷基矽烷、脲基矽烷、乙烯矽烷等之各種矽烷系化合物、鈦系化合物、鋁螯合劑類、鋁/鋯系化合物等。此等之具體例可舉出:乙烯基三氯矽烷、乙烯基三乙氧基矽烷、乙烯基三(β-甲氧基乙氧基)矽烷、γ-甲基丙烯醯氧基丙基三甲氧基矽烷、β-(3,4-環氧環己基)乙基三甲氧基矽烷、γ-環氧丙氧基丙基三甲氧基矽烷、γ-環氧丙氧基丙基甲基二甲氧基矽烷、乙烯基三乙醯氧基矽烷、γ-硫醇丙基三甲氧基矽烷、γ-胺基丙基三甲氧基矽烷、γ-胺基丙基甲基二甲氧基矽烷、γ-胺基丙基三乙氧基矽烷、γ-胺基丙基甲基二乙氧基矽烷、γ-苯胺基丙基三甲氧基矽烷、γ-苯胺基丙基三乙氧基矽烷、γ-(N,N-二甲
基)胺基丙基三甲氧基矽烷、γ-(N,N-二乙基)胺基丙基三甲氧基矽烷、γ-(N,N-二丁基)胺基丙基三甲氧基矽烷、γ-(N-甲基)苯胺基丙基三甲氧基矽烷、γ-(N-乙基)苯胺基丙基三甲氧基矽烷、γ-(N,N-二甲基)胺基丙基三乙氧基矽烷、γ-(N,N-二乙基)胺基丙基三乙氧基矽烷、γ-(N,N-二丁基)胺基丙基三乙氧基矽烷、γ-(N-甲基)苯胺基丙基三乙氧基矽烷、γ-(N-乙基)苯胺基丙基三乙氧基矽烷、γ-(N,N-二甲基)胺基丙基甲基二甲氧基矽烷、γ-(N,N-二乙基)胺基丙基甲基二甲氧基矽烷、γ-(N,N-二丁基)胺基丙基甲基二甲氧基矽烷、γ-(N-甲基)苯胺基丙基甲基二甲氧基矽烷、γ-(N-乙基)苯胺基丙基甲基二甲氧基矽烷、N-(三甲氧基矽烷基丙基)乙二胺、N-(二甲氧基甲基矽烷基異丙基)乙二胺、甲基三甲氧基矽烷、二甲基二甲氧基矽烷、甲基三乙氧基矽烷、γ-氯丙基三甲氧基矽烷、六甲基二矽烷、乙烯基三甲氧基矽烷、γ-硫醇丙基甲基二甲氧基矽烷等之矽烷系偶合劑、異丙基三異硬脂醯基鈦酸酯、異丙基三(二辛基焦磷酸酯)鈦酸酯、異丙基三(N-胺基乙基-胺基乙基)鈦酸酯、四辛基雙(雙十三烷基亞磷酸酯)鈦酸酯、四(2,2-二烯丙氧基甲基-1-丁基)雙(雙十三烷基)亞磷酸酯鈦酸酯、雙(二辛基焦磷酸酯)氧醋酸酯鈦酸酯、雙(二辛基焦磷酸酯)乙撐醋酸酯鈦酸酯、異丙基三辛醯基鈦酸酯、異丙基二甲基丙烯醯基異硬脂醯基鈦酸酯、異丙基三(十二烷基)苯磺醯基鈦酸酯、異丙基
異硬脂醯基二丙烯醯基鈦酸酯、異丙基三(二辛基磷酸酯)鈦酸酯、異丙基三枯基(cumyl)苯基鈦酸酯、四異丙基雙(二辛基膦)鈦酸酯等之鈦酸酯系偶合劑等。上述偶合劑可1種單獨使用,亦可組合2種以上使用。
本發明之電子零件封閉用液狀樹脂組成物中,就提高IC等半導體元件之耐移行性、耐濕性及高溫放置特性之觀點考量,可調配以由下述組成式(I)、(II)所表示之離子捕捉劑。
Mg1-XAlX(OH)2(CO3)X/2‧mH2O (I)
(0<X≦0.5,m為正數)
BiOx(OH)y(NO3)z (II)
(0.9≦x≦1.1,0.6≦y≦0.8,0.2≦z≦0.4)
以上式(I)表示之離子捕捉劑,作為市售品可取得協和化學工業(股)製之商品名「DHT-4A」。又,以上述式(II)表示之離子捕捉劑,作為市售品可取得東亞合成(股)製之商品名「IXE500」。
上述離子捕捉劑之調配量,較佳者為,電子零件封閉用液狀樹脂組成物全體之0.1~3.0重量%的範圍,以0.3~1.5重量%的範圍為更佳。
上述離子捕捉劑之平均粒徑以0.1~3.0μm為佳,最大粒徑以10μm以下為佳。
又,視需要亦可調配其他陰離子交換體。作為陰離子交換體並無特別限制,可用以往所公知者。作為陰離子交
換體之具體例可舉出:選自鎂、鋁、鈦、鋯、銻等之元素的含水氧化物等。此等陰離子交換體可1種單獨使用,亦可組合2種以上使用。
本發明之電子零件封閉用液狀樹脂組成物中,作為其他添加劑,可視需要調配以染料、碳黑等之著色劑、調平劑、消泡劑等。
本發明之電子零件封閉用液狀樹脂組成物之調製,只要是可使上述各成分均一地分散混合者,任何方法皆可使用。作為通常之方法,可藉由秤量既定調配量之各成分,用樁搗機、混合輥、行星式混合機等進行混合、混練,視需要進行脫泡而得到。
本發明之電子零件封閉用液狀樹脂組成物於25℃之黏度以5~200Pa‧s為佳,以10~100Pa‧s為更佳。電子零件封閉用液狀樹脂組成物於25℃之黏度可藉由使用E型黏度計(錐角度3°,旋轉數10rpm)測定而求出。
本發明之電子零件封閉用液狀樹脂組成物之凝膠時間(gel time)以500秒以下為佳,以300秒以下為更佳。凝膠時間可藉由用凝膠化試驗機,將電子零件封閉用液狀樹脂組成物適量地垂流於165℃之熱板上後,測定其迄至開始凝膠化的時間(秒)求出。
又,電子零件封閉用液狀樹脂組成物之加熱重量減少量以3重量%以下為佳,以2重量%以下為更佳。加熱重量減少量可藉由用熱重量測定裝置「TGA-Q500」(TA儀器公司製),使電子零件封閉用液狀樹脂組成物20mg
於空氣中自室溫以升溫速度10℃/分鐘加熱至165℃,再於165℃保持1小時後,測定其重量減少量(重量%)求出。
本發明之電子零件裝置,其特徵在於,具備有藉由上述本發明之電子零件封閉用液狀樹脂組成物封閉之電子零件。作為此種電子零件裝置可舉出例如:在導線架、已配線之膠帶載體(tape carrier)、硬式及軟式配線基板、玻璃、矽晶圓等之支持組件上,搭載半導體晶片、電晶體、二極體、閘流體(Thyristor)等之主動元件、電容器、電阻、電阻陣列、線圈、開關等之被動元件等電子零件,將其等電子零件用本發明之電子零件封閉用液狀樹脂組成物封閉者。此等之中,較佳者為在配線基板上直接以突塊連接所成之半導體裝置,尤以在形成於硬式及軟式配線基板或玻璃上之配線基板上直接以突塊連接半導體元件所成之覆晶接合(flip chip bonding)半導體裝置為特佳。作為具體例可舉出:覆晶BGA(Ball Grid Array:球狀柵極陣列封裝體)、LGA(Land Grid Array:基座柵極陣列封裝體)、COF(Chip on Film:薄膜上晶片)等之半導體裝置。
本發明之電子零件封閉用液狀樹脂組成物可較佳地適用於可靠性優異之覆晶構裝半導體裝置作為填底材。本發明之電子零件封閉用液狀樹脂組成物之特別適用之覆晶構裝之範疇,係連接配線基板與半導體元件的突塊之材質非
以往之含鉛者,而係用Sn-Ag-Cu系等之無鉛焊料之覆晶構裝的半導體裝置。與以往之含鉛焊料相比,即使相對於用物性脆的無鉛焊料進行突塊連接所成之覆晶構裝半導體裝置,本發明之電子零件封閉用液狀樹脂組成物可確保良好的可靠性。再者,本發明之電子零件封閉用液狀樹脂組成物適合於電子零件之長邊長度為5mm以上的大型元件,對於構成電子零件裝置之配線基板與該電子零件之突塊連接面之距離為60μm以下之狹窄間隙中之覆晶連接,亦呈現良好的流動性與填充性,可提供耐濕性、耐熱衝擊性等可靠性皆優異之電子零件裝置。前述電子零件裝置之較佳的長邊長度為5~30mm,前述配線基板與該電子零件之突塊連接面之更佳距離為30~60μm。
又,近年來隨著半導體元件之高速化而於半導體元件上形成低介電率之層間絕緣膜,而該層間絕緣膜之機械強度差,有易受到外力而破壞致發生故障的傾向。此傾向於半導體元件愈大而愈顯著,故期盼藉由填底材以達到減低應力之效果。本發明之電子零件封閉用液狀樹脂組成物,於電子零件的長邊為5mm以上,且該電子零件為具有介電率3.0以下的介電體層之半導體元件的覆晶連接中,可發揮優異的應力減低效果,而可提供可靠性高的半導體裝置。前述電子零件之較佳的長邊長度為5~30mm,前述電子零件之較佳的介電率為2.7以下。
作為使用本發明之電子零件封閉用液狀樹脂組成物進行電子零件之封閉的方法,可舉出:點膠(dispense)方
式、注型方式、印刷方式等。
其次,藉由實施例就本發明更具體地作說明,惟本發明並非限定於此等實施例。
實施例及比較例中所進行之特性試驗的試驗方法彙整如後。
又,使用之電子零件封閉用液狀樹脂組成物之諸特性及含浸時間、孔隙之觀察、各種可靠性之評價係以下述方法及條件進行。
含浸時間、孔隙之觀察、可靠性之評價中所使用之半導體裝置係使用下述之2種類的覆晶BGA(Ball Grid Array:球狀柵極陣列封裝體)。
(a)非低介電率(Non low-k)覆晶BGA
晶片尺寸20×20×0.55tmm(線路:鋁之珠串(daisy chain)連接,鈍化處理:日立化成杜邦微系統(股)製之聚醯亞胺膜,商品名「HD4000」),突塊:焊料球(Sn-Ag-Cu,Φ80μm,7744接角(pin)),突塊間距:190μm,基板:FR-5(日立化成工業(股)製之抗焊劑,商品名「SR7000」,60×60×0.8tmm),基板與突塊連接面之距離:50μm。
(b)低介電率覆晶BGA
晶片尺寸20×20×0.55tmm(形成有介電率2.7之介電體層3層,線路:鋁之珠串連接,鈍化處理:日立化成杜邦微系統(股)製之聚醯亞胺膜,商品名「HD4000」)
,突塊:焊料球(Sn-Ag-Cu,Φ80μm,7744接角(pin)),突塊間距:190μm,基板:FR-5(日立化成工業(股)製之抗焊劑,商品名「SR7000」,60×60×0.8tmm),基板與突塊連接面之距離:50μm。
下述評價試驗(8)~(11)中所用之半導體裝置,係用電子零件封閉用液狀樹脂組成物作為填底材以點膠方式將半導體元件封閉,於165℃、2小時之加熱條件下使其硬化而製作。又,下述評價試驗(5)、(6)中所用之各種試驗片之硬化條件亦以相同條件進行。
(1)黏度
電子零件封閉用液狀樹脂組成物之25℃下的黏度係用E型黏度計(錐角度3°,旋轉數10rpm)測定。
(2)凝膠時間
用凝膠化試驗機,將電子零件封閉用液狀樹脂組成物適量地垂流於165℃之熱板上後,測定其迄至開始凝膠化的時間(秒)。
(3)加熱重量減少量
用熱重量測定裝置「TGA-Q500」(TA儀器公司製),使電子零件封閉用液狀樹脂組成物20mg於空氣中自室溫以升溫速度10℃/分鐘加熱至165℃,再於165℃保持1小時後,測定其重量減少量(重量%)。
(4)Tg
使電子零件封閉用液狀樹脂組成物於165℃硬化1小時而製作之試驗片(3mm×3mm×20mm)的Tg,係用熱機
械分析裝置「TMA4000SA」(馬克科技製),於荷重15g、測定溫度0℃~200℃、升溫速度10℃/分鐘之條件下測定。
(5)對抗焊劑之接合力(SR接合力)
於抗焊劑「SR7000」(日立化成工業(股)製)之表面上,以電子零件封閉用液狀樹脂組成物成形為直徑3mm、高1mm,製作成試驗片,用接合測試機「DS100型」(DAGE公司製),以頭速(head speed)50μm/秒、25℃之條件下施加剪力,測定試驗片自抗焊劑剝離之強度。
此測定係於試驗片剛製作完成後,及130℃、85%RH之HAST(Highly Accelerated Temperature and Humidity Stress Test:高度加速之溫度與濕度應力試驗)條件下,對試驗片進行150小時處理之後立即進行。
(6)對聚醯亞胺之接合力(PI接合力)
於感光性聚醯亞胺「HD4000」(日立化成杜邦微系統(股)製)之表面,以電子零件封閉用液狀樹脂組成物成形為直徑3mm、高1mm,製作成試驗片,用接合測試機「DS100型」(DAGE公司製),以頭速(head speed)50μm/秒、25℃之條件下施加剪力,測定試驗片自感光性聚醯亞胺剝離之強度。
此測定係於試驗片剛製作完成後,及130℃、85%RH之HAST條件下,對試驗片進行150小時處理之後立即進行。
(7)含浸時間
將半導體裝置放置於加熱至110℃之熱板上,用點膠機將電子零件封閉用液狀樹脂組成物之既定量滴下至半導體元件之側面(1邊),測定電子零件封閉用液狀樹脂組成物滲透至半導體元件之對向之側面的時間(秒)。
(8)孔隙之有無
用電子零件封閉用液狀樹脂組成物作為填底材將半導體元件封閉製作半導體裝置,對其內部以超音波探查裝置「AT-5500」(日立建機(股)製)觀察,查察孔隙之有無。
(9)耐回流(reflow)性
用電子零件封閉用液狀樹脂組成物作為填底材將半導體元件封閉製作半導體裝置,使其於120℃加熱乾燥12小時後,於85℃、60%RH下使其吸濕168小時,於遠紅外線加熱方式之回流爐(於150℃~180℃預熱50秒,波峰溫度260℃,250℃以上之加熱時間40秒)中通過3次後,對其內部以超音波探查裝置「AT-5500」(日立建機(股)製)觀察,就樹脂硬化物與半導體元件之剝離、樹脂硬化物與基板之剝離、樹脂硬化物之有否龜裂、以不良封裝(passage)數/評價封裝數作評價。
(10)耐溫度循環性
用電子零件封閉用液狀樹脂組成物作為填底材將半導體元件封閉製作半導體裝置,使其於-50℃~150℃、各30分鐘之熱循環下進行1000循環處理,進行導通試驗,
就鋁配線及墊塊(pad)之有無斷線進行查察,以不良封裝數/評價封裝數作評價。
(11)耐濕性
用電子零件封閉用液狀樹脂組成物作為填底材將半導體元件封閉製作半導體裝置,使其於130℃、85%RH之HAST條件下進行150小時處理後,進行導通試驗,就鋁配線及pad之有無斷線進行查察,以不良封裝數/評價封裝數作評價。
將下述成分分別以下述表1~表2中所示之組成(重量份)調配,以三輥式輥軋機及真空樁搗機進行混練分散後,製作實施例1~8及比較例1~7之電子零件封閉用液狀樹脂組成物。
將實施例1~8、比較例1~7之電子零件封閉用液狀樹脂組成物藉由上述(1)~(11)之各種特性試驗進行評價。評價結果示於下述表1~表2。又,表中之空白欄位表示未調配。
表中之各成分係使用下述者。
環氧樹脂1:雙酚F經環氧化得到之環氧當量160的液狀環氧樹脂(東都化成(股)製,商品名「YDF-8170C」)
環氧樹脂2:胺基酚經環氧化得到之環氧當量95之3官能基液狀環氧樹脂(JER公司製,商品名「E630」)
液狀胺1:活性氫當量45之二乙基甲苯二胺(JER公司製,商品名「艾比秋阿W」)
液狀胺2:活性氫當量63之3,3’-二乙基-4,4’-二胺基二苯甲烷(日本化藥公司製,商品名「卡亞哈德A-A」)
醯肼化合物1:平均粒徑1.5μm,活性氫當量43.5之己二酸二醯肼(大塚化學(股)製,商品名「ADH-4S」)
醯肼化合物2:平均粒徑15μm,活性氫當量43.5之己二酸二醯肼(日本醯肼工業公司製,商品名「ADH」)
醯肼化合物3:平均粒徑1.8μm,活性氫當量48.5之間苯二甲酸二醯肼(大塚化學(股)製,商品名「IDH-S」)
平均粒徑1μm之球狀熔融氧化矽
2-苯基-4-甲基-5-羥甲基咪唑
γ-環氧丙氧基丙基三甲氧基矽烷
碳黑(三菱化學(股)製,商品名「MA-100」)
鉍系離子捕捉劑(東亞合成(股)製,商品名「IXE-500」)
表中之*1~*3如下:
*1:液狀胺硬化劑之活性氫當量,係於將硬化劑之活性氫當量與醯肼化合物之活性氫當量的合計定為1當量時,以相對於環氧樹脂1當量之硬化劑的活性氫當量來表示。
*2:醯肼化合物之活性氫當量,係於將硬化劑之活性氫當量與醯肼化合物之活性氫當量的合計定為1當量時,以相對於環氧樹脂1當量之醯肼化合物的活性氫當量來表示。
*3:無機填充劑之含有量(重量%),係以相對於電子零件封閉用液狀樹脂組成物全體之無機填充劑的含有量表示。
未含本發明中之(C)成分之醯肼化合物及硬化促進劑之比較例1~2,凝膠時間長且加熱重量減少量多,故
產生孔隙。又,含有硬化促進劑而不含(C)成分之醯肼化合物之比較例3~4及含有硬化促進劑而(C)成分之醯肼化合物粉末之粒徑較粗之比較例5、7,凝膠時間可縮短一定的程度,且加熱重量減少量亦減少,因而可防止孔隙之產生。然而,由於硬化1小時反應不夠完全,故Tg低,且與各被附著體之接合力小,因而耐回流性、及耐溫度循環性、耐濕性等各種可靠性顯著地降低。又,相對於比較例5之(C)成分的硬化劑比例較高之比較例6,凝膠時間可縮短且Tg亦變高,惟HAST150小時處理後之接合例大幅地降低,致耐濕性變差。
相對於此,實施例1~8,由於凝膠時間短,加熱重量減少量亦少,故成形時未產生孔隙,且1小時之硬化下反應可充分進行,故呈現高Tg與接合力,生產性亦優,再者,由於係謀求HAST150小時處理後之接合性之提高,故耐回流性、及耐溫度循環性、耐濕性等各種可靠性優異。
Claims (7)
- 一種電子零件封閉用液狀樹脂組成物,其特徵在於,含有:(A)含有液狀環氧樹脂之環氧樹脂、(B)含有液狀芳香族胺之硬化劑、(C)平均粒徑為未滿2μm之醯肼化合物及(D)平均粒徑為未滿2μm之無機填充劑。
- 如申請專利範圍第1項所記載之電子零件封閉用液狀樹脂組成物,其中,前述醯肼化合物為選自碳數2~10之脂肪族多元酸二醯肼化合物及碳數8~15之芳香族多元酸二醯肼化合物之至少1種。
- 一種電子零件裝置,其特徵在於,係具備有藉由申請專利範圍第1或2項所記載之電子零件封閉用液狀樹脂組成物封閉之電子零件者。
- 如申請專利範圍第3項所記載之電子零件裝置,其中,前述電子零件為半導體元件,將該半導體元件直接突塊連接於配線基板上所成者。
- 如申請專利範圍第4項所記載之電子零件裝置,其中,前述突塊為不含鉛之金屬。
- 如申請專利範圍第3~5項中任一項所記載之電子零件裝置,其中,前述電子零件之長邊之長度為5mm以上,且構成電子零件裝置之配線基板與該電子零件之突塊連接面之距離為60μm以下。
- 如申請專利範圍第3~5項中任一項所記載之電子零件裝置,其中,前述電子零件之長邊之長度為5mm以上,且該電子零件為具有介電率3.0以下之介電體層之半導體元件。
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JPWO2010073559A1 (ja) * | 2008-12-25 | 2012-06-07 | 住友ベークライト株式会社 | 液状樹脂組成物および半導体装置 |
WO2010099029A1 (en) * | 2009-02-27 | 2010-09-02 | Cytec Technology Corp. | Epoxy compositions with improved mechanical performance |
US8420938B2 (en) * | 2009-03-05 | 2013-04-16 | Hitachi Cable, Ltd. | Insulated electric wire |
JP5728804B2 (ja) * | 2009-10-07 | 2015-06-03 | デクセリアルズ株式会社 | 熱硬化性接着組成物、熱硬化性接着シート、その製造方法及び補強フレキシブルプリント配線板 |
US20130061925A1 (en) * | 2010-05-17 | 2013-03-14 | Nippon Kayaku Kabushiki Kaisha | Photoelectric Conversion Element Using Thermosetting Sealing Agent For Photoelectric Conversion Element |
TWI509043B (zh) * | 2010-09-09 | 2015-11-21 | Hitachi Chemical Co Ltd | Adhesive composition, method for manufacturing connection of circuit member and semiconductor device |
TWI425066B (zh) * | 2010-09-09 | 2014-02-01 | Hitachi Chemical Co Ltd | Preparation method of adhesive composition, circuit board for connecting circuit member, and manufacturing method of semiconductor device |
JP5820108B2 (ja) * | 2010-11-29 | 2015-11-24 | デクセリアルズ株式会社 | 熱硬化性接着シート及び熱硬化性接着シートの製造方法 |
JP5770995B2 (ja) | 2010-12-01 | 2015-08-26 | デクセリアルズ株式会社 | 熱硬化性樹脂組成物、熱硬化性接着シート及び熱硬化性接着シートの製造方法 |
WO2012147874A1 (ja) * | 2011-04-28 | 2012-11-01 | 日立化成工業株式会社 | 電子部品用樹脂組成物及び電子部品装置 |
US8552567B2 (en) | 2011-07-27 | 2013-10-08 | Micron Technology, Inc. | Semiconductor die assemblies, semiconductor devices including same, and methods of fabrication |
US8937309B2 (en) * | 2011-08-08 | 2015-01-20 | Micron Technology, Inc. | Semiconductor die assemblies, semiconductor devices including same, and methods of fabrication |
US20130214419A1 (en) * | 2012-02-16 | 2013-08-22 | Chipbond Technology Corporation | Semiconductor packaging method and structure thereof |
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US9548252B2 (en) | 2013-11-19 | 2017-01-17 | Raytheon Company | Reworkable epoxy resin and curative blend for low thermal expansion applications |
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004104683A1 (ja) * | 2003-05-21 | 2004-12-02 | Nippon Kayaku Kabushiki Kaisha | 液晶シール剤およびそれを用いた液晶表示セル |
US20060017188A1 (en) * | 2003-01-30 | 2006-01-26 | Hitachi Medical Co., Ltd. | Semiconductor- sealing -purpose epoxy resin compound producing method |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5001542A (en) * | 1988-12-05 | 1991-03-19 | Hitachi Chemical Company | Composition for circuit connection, method for connection using the same, and connected structure of semiconductor chips |
KR100437437B1 (ko) * | 1994-03-18 | 2004-06-25 | 히다치 가세고교 가부시끼가이샤 | 반도체 패키지의 제조법 및 반도체 패키지 |
JP3481304B2 (ja) * | 1994-06-03 | 2003-12-22 | 日本ヒドラジン工業株式会社 | 常温安定性に優れた耐熱性エポキシ樹脂組成物及びエポキシ樹脂用硬化剤 |
JP3685585B2 (ja) * | 1996-08-20 | 2005-08-17 | 三星電子株式会社 | 半導体のパッケージ構造 |
JP4020274B2 (ja) * | 1996-10-07 | 2007-12-12 | ソマール株式会社 | シリカ含有液状エポキシ樹脂組成物及び半導体チップ封止剤 |
JPH10163400A (ja) * | 1996-11-28 | 1998-06-19 | Nitto Denko Corp | 半導体装置及びそれに用いる2層リードフレーム |
US6059894A (en) * | 1998-04-08 | 2000-05-09 | Hewlett-Packard Company | High temperature flip chip joining flux that obviates the cleaning process |
JP4568940B2 (ja) * | 1999-04-13 | 2010-10-27 | 日立化成工業株式会社 | 封止用エポキシ樹脂組成物及び電子部品装置 |
JP2004075914A (ja) * | 2002-08-21 | 2004-03-11 | Toray Ind Inc | エポキシ樹脂組成物及びプリプレグ |
JP2004303874A (ja) * | 2003-03-31 | 2004-10-28 | Sumitomo Bakelite Co Ltd | 半導体装置の製造方法及び半導体装置 |
TWI281924B (en) * | 2003-04-07 | 2007-06-01 | Hitachi Chemical Co Ltd | Epoxy resin molding material for sealing use and semiconductor device |
JP2005350618A (ja) | 2004-06-14 | 2005-12-22 | Shin Etsu Chem Co Ltd | 液状エポキシ樹脂組成物及び半導体装置 |
-
2007
- 2007-09-28 US US12/444,449 patent/US7982322B2/en not_active Expired - Fee Related
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060017188A1 (en) * | 2003-01-30 | 2006-01-26 | Hitachi Medical Co., Ltd. | Semiconductor- sealing -purpose epoxy resin compound producing method |
WO2004104683A1 (ja) * | 2003-05-21 | 2004-12-02 | Nippon Kayaku Kabushiki Kaisha | 液晶シール剤およびそれを用いた液晶表示セル |
Non-Patent Citations (1)
Title |
---|
3. 2005/04/15,半導體科技," 各種覆晶構裝之大量生產錫焊凸塊(solder bump)及黏著覆晶(adhesive flip chip)之優勢" 網址: http://ssttpro.acesuppliers.com/semiconductor/Magazine_Details_Index_Id_96.html * |
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