TWI382451B - 製造半導體鍍層基板之方法 - Google Patents
製造半導體鍍層基板之方法 Download PDFInfo
- Publication number
- TWI382451B TWI382451B TW093141280A TW93141280A TWI382451B TW I382451 B TWI382451 B TW I382451B TW 093141280 A TW093141280 A TW 093141280A TW 93141280 A TW93141280 A TW 93141280A TW I382451 B TWI382451 B TW I382451B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- plasma
- plating
- coating
- roughened
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims description 66
- 239000004065 semiconductor Substances 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title description 7
- 239000000463 material Substances 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 37
- 239000002245 particle Substances 0.000 claims description 32
- 238000007747 plating Methods 0.000 claims description 25
- 238000000576 coating method Methods 0.000 claims description 21
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 16
- 239000011248 coating agent Substances 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 15
- 239000008199 coating composition Substances 0.000 claims description 13
- 239000002253 acid Substances 0.000 claims description 11
- 229910044991 metal oxide Inorganic materials 0.000 claims description 11
- 150000004706 metal oxides Chemical class 0.000 claims description 11
- 239000010453 quartz Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 7
- 238000007788 roughening Methods 0.000 claims description 7
- 230000003746 surface roughness Effects 0.000 claims description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 6
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 2
- 238000007654 immersion Methods 0.000 claims 3
- 150000001875 compounds Chemical class 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 11
- 238000005422 blasting Methods 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 238000002294 plasma sputter deposition Methods 0.000 description 6
- 239000003082 abrasive agent Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000010943 off-gassing Methods 0.000 description 2
- 239000013618 particulate matter Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000005931 tert-butyloxycarbonyl group Chemical group [H]C([H])([H])C(OC(*)=O)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
- C23C4/11—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
- C23C4/134—Plasma spraying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
- Coating By Spraying Or Casting (AREA)
- ing And Chemical Polishing (AREA)
- Chemically Coating (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/807,716 US20050215059A1 (en) | 2004-03-24 | 2004-03-24 | Process for producing semi-conductor coated substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200535926A TW200535926A (en) | 2005-11-01 |
| TWI382451B true TWI382451B (zh) | 2013-01-11 |
Family
ID=34862056
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093141280A TWI382451B (zh) | 2004-03-24 | 2004-12-30 | 製造半導體鍍層基板之方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20050215059A1 (enExample) |
| EP (1) | EP1580292A1 (enExample) |
| JP (1) | JP4785834B2 (enExample) |
| KR (1) | KR20050094766A (enExample) |
| CN (1) | CN101304815A (enExample) |
| IL (1) | IL178084A (enExample) |
| TW (1) | TWI382451B (enExample) |
| WO (1) | WO2005098930A2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8067067B2 (en) * | 2002-02-14 | 2011-11-29 | Applied Materials, Inc. | Clean, dense yttrium oxide coating protecting semiconductor processing apparatus |
| US10242888B2 (en) | 2007-04-27 | 2019-03-26 | Applied Materials, Inc. | Semiconductor processing apparatus with a ceramic-comprising surface which exhibits fracture toughness and halogen plasma resistance |
| US10622194B2 (en) | 2007-04-27 | 2020-04-14 | Applied Materials, Inc. | Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance |
| ES2557179T3 (es) | 2007-09-13 | 2016-01-22 | Deru Gmbh | Componente de endoprótesis |
| US9090046B2 (en) * | 2012-04-16 | 2015-07-28 | Applied Materials, Inc. | Ceramic coated article and process for applying ceramic coating |
| CN109112464A (zh) * | 2018-09-20 | 2019-01-01 | 安徽富乐德科技发展有限公司 | 一种半导体清洗腔陶瓷溶射层的制备方法 |
| CN114381683B (zh) * | 2020-10-20 | 2024-04-12 | 中国兵器工业第五九研究所 | 基体防护涂层的制备方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020094686A1 (en) * | 1999-06-28 | 2002-07-18 | Gorczyca Thomas Bert | Semiconductor processing article |
| US20030129772A1 (en) * | 2001-12-07 | 2003-07-10 | Komico Co., Ltd | Method of fabricating and repairing ceramic components for semiconductor fabrication using plasma spray process |
Family Cites Families (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5172934A (enExample) * | 1974-12-23 | 1976-06-24 | Mitsubishi Heavy Ind Ltd | |
| US4245229A (en) * | 1979-01-26 | 1981-01-13 | Exxon Research & Engineering Co. | Optical recording medium |
| US4349408A (en) * | 1981-03-26 | 1982-09-14 | Rca Corporation | Method of depositing a refractory metal on a semiconductor substrate |
| US4656730A (en) * | 1984-11-23 | 1987-04-14 | American Telephone And Telegraph Company, At&T Bell Laboratories | Method for fabricating CMOS devices |
| GB2185758B (en) * | 1985-12-28 | 1990-09-05 | Canon Kk | Method for forming deposited film |
| US5202008A (en) * | 1990-03-02 | 1993-04-13 | Applied Materials, Inc. | Method for preparing a shield to reduce particles in a physical vapor deposition chamber |
| US5391275A (en) * | 1990-03-02 | 1995-02-21 | Applied Materials, Inc. | Method for preparing a shield to reduce particles in a physical vapor deposition chamber |
| JPH0598412A (ja) * | 1991-10-07 | 1993-04-20 | Nippon Steel Corp | 被溶射材料の前処理方法 |
| FI92897C (fi) * | 1993-07-20 | 1995-01-10 | Planar International Oy Ltd | Menetelmä kerrosrakenteen valmistamiseksi elektroluminenssikomponentteja varten |
| JP3347555B2 (ja) * | 1994-12-01 | 2002-11-20 | キヤノン株式会社 | リチウム二次電池の負極の作製方法 |
| US5651797A (en) * | 1995-08-07 | 1997-07-29 | Joray Corporation | Apparatus and method for the immersion cleaning and transport of semiconductor components |
| US5788304A (en) * | 1996-05-17 | 1998-08-04 | Micron Technology, Inc. | Wafer carrier having both a rigid structure and resistance to corrosive environments |
| US5916454A (en) * | 1996-08-30 | 1999-06-29 | Lam Research Corporation | Methods and apparatus for reducing byproduct particle generation in a plasma processing chamber |
| JPH1146006A (ja) * | 1997-07-25 | 1999-02-16 | Canon Inc | 光起電力素子およびその製造方法 |
| US6087191A (en) * | 1998-01-22 | 2000-07-11 | International Business Machines Corporation | Method for repairing surface defects |
| US6221269B1 (en) * | 1999-01-19 | 2001-04-24 | International Business Machines Corporation | Method of etching molybdenum metal from substrates |
| US6504233B1 (en) * | 1999-06-28 | 2003-01-07 | General Electric Company | Semiconductor processing component |
| US6296716B1 (en) * | 1999-10-01 | 2001-10-02 | Saint-Gobain Ceramics And Plastics, Inc. | Process for cleaning ceramic articles |
| US6663914B2 (en) * | 2000-02-01 | 2003-12-16 | Trebor International | Method for adhering a resistive coating to a substrate |
| TW503449B (en) * | 2000-04-18 | 2002-09-21 | Ngk Insulators Ltd | Halogen gas plasma-resistive members and method for producing the same, laminates, and corrosion-resistant members |
| JP2002249864A (ja) * | 2000-04-18 | 2002-09-06 | Ngk Insulators Ltd | 耐ハロゲンガスプラズマ用部材およびその製造方法 |
| WO2002040732A1 (en) * | 2000-11-15 | 2002-05-23 | G.T. Equipment Technologies Inc. | A protective layer for quartz crucibles used for silicon crystallization |
| US6805952B2 (en) * | 2000-12-29 | 2004-10-19 | Lam Research Corporation | Low contamination plasma chamber components and methods for making the same |
| WO2002090008A1 (fr) * | 2001-05-01 | 2002-11-14 | Center For Advanced Science And Technology Incubation, Ltd. | Procede de nettoyage d'une structure, procede anticorrosion et structure mettant en oeuvre ceux-ci |
| US6503824B1 (en) * | 2001-10-12 | 2003-01-07 | Mosel Vitelic, Inc. | Forming conductive layers on insulators by physical vapor deposition |
| JP2003212598A (ja) * | 2001-11-13 | 2003-07-30 | Tosoh Corp | 石英ガラス部品及びセラミック部品並びにそれらの製造方法 |
| US6623559B2 (en) * | 2001-12-10 | 2003-09-23 | Nanotek Instruments, Inc. | Method for the production of semiconductor quantum particles |
| US6656535B2 (en) * | 2001-12-21 | 2003-12-02 | Applied Materials, Inc | Method of fabricating a coated process chamber component |
| US6861101B1 (en) * | 2002-01-08 | 2005-03-01 | Flame Spray Industries, Inc. | Plasma spray method for applying a coating utilizing particle kinetics |
| US6632689B2 (en) * | 2002-01-30 | 2003-10-14 | Motorola, Inc. | Method for processing semiconductor wafers in an enclosure with a treated interior surface |
| WO2003101762A1 (en) * | 2002-05-28 | 2003-12-11 | Advanced Technology Materials, Inc. | Process for cleaning and repassivating semiconductor equipment parts |
| US7402747B2 (en) * | 2003-02-18 | 2008-07-22 | Kyocera Corporation | Photoelectric conversion device and method of manufacturing the device |
-
2004
- 2004-03-24 US US10/807,716 patent/US20050215059A1/en not_active Abandoned
- 2004-12-30 TW TW093141280A patent/TWI382451B/zh not_active IP Right Cessation
-
2005
- 2005-01-17 EP EP05250218A patent/EP1580292A1/en not_active Ceased
- 2005-01-21 KR KR1020050005915A patent/KR20050094766A/ko not_active Ceased
- 2005-03-17 JP JP2007505028A patent/JP4785834B2/ja not_active Expired - Fee Related
- 2005-03-17 CN CNA2005800088863A patent/CN101304815A/zh active Pending
- 2005-03-17 WO PCT/US2005/009108 patent/WO2005098930A2/en not_active Ceased
-
2006
- 2006-09-14 IL IL178084A patent/IL178084A/en active IP Right Grant
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020094686A1 (en) * | 1999-06-28 | 2002-07-18 | Gorczyca Thomas Bert | Semiconductor processing article |
| US20030129772A1 (en) * | 2001-12-07 | 2003-07-10 | Komico Co., Ltd | Method of fabricating and repairing ceramic components for semiconductor fabrication using plasma spray process |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101304815A (zh) | 2008-11-12 |
| US20050215059A1 (en) | 2005-09-29 |
| KR20050094766A (ko) | 2005-09-28 |
| EP1580292A1 (en) | 2005-09-28 |
| WO2005098930A3 (en) | 2006-11-09 |
| IL178084A0 (en) | 2006-12-31 |
| WO2005098930A2 (en) | 2005-10-20 |
| IL178084A (en) | 2013-09-30 |
| TW200535926A (en) | 2005-11-01 |
| JP2007530788A (ja) | 2007-11-01 |
| JP4785834B2 (ja) | 2011-10-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108884546B (zh) | 具有耐氯和氟等离子体侵蚀性的涂覆的半导体加工构件及其复合氧化物涂层 | |
| KR100851833B1 (ko) | 석영 글라스 부품, 세라믹 부품 및 그 제조방법 | |
| CN107287545B (zh) | 氟化钇喷涂涂层、用于其的喷涂材料以及包括喷涂涂层的抗腐蚀涂层 | |
| CN1294615C (zh) | 制造被涂覆处理室部件的方法 | |
| CN101168842B (zh) | 抗等离子体层的低温气浮沉积 | |
| JP4006535B2 (ja) | 半導体または液晶製造装置部材およびその製造方法 | |
| JP2005240171A (ja) | 耐食性部材およびその製造方法 | |
| US7531232B2 (en) | Component for vacuum apparatus, production method thereof and apparatus using the same | |
| KR101497985B1 (ko) | 트윈 와이어 아크 스프레이 코팅의 적용을 위한 방법 및장치 | |
| JP5566891B2 (ja) | 半導体製造装置用部品及び半導体製造装置 | |
| JP2003212598A (ja) | 石英ガラス部品及びセラミック部品並びにそれらの製造方法 | |
| TWI382451B (zh) | 製造半導體鍍層基板之方法 | |
| Jung et al. | Halogen plasma erosion resistance of rare earth oxide films deposited on plasma sprayed alumina coating by aerosol deposition | |
| CN1576257A (zh) | 耐等离子体构件 | |
| JPH10279349A (ja) | 耐プラズマ性に優れたアルミナセラミックス | |
| JP2007321183A (ja) | 耐プラズマ部材 | |
| JP3808245B2 (ja) | 半導体製造用チャンバ構成部材 | |
| JP5365165B2 (ja) | ウエハ | |
| JP2005225745A (ja) | 耐プラズマ部材及びその製造方法 | |
| JP5077573B2 (ja) | ウエハ | |
| CN116529415A (zh) | 用于静电卡盘的改进的抗等离子体涂层 | |
| JP2025527487A (ja) | 大気プラズマ溶射法による高密度イットリア皮膜の製造方法およびそれを用いて製造されたイットリア溶射皮膜 | |
| JPH11246263A (ja) | 耐プラズマ性に優れるアルミナセラミックスの製造方法 | |
| JP2002179457A (ja) | 耐食性部材 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |