TWI382451B - 製造半導體鍍層基板之方法 - Google Patents
製造半導體鍍層基板之方法 Download PDFInfo
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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Description
本發明概言之係關於製造一種適用於半導體製程之基板，在該半導體製程中，首先使該基板表面變粗糙，以增進鍍層材料之黏著。然後處理該表面以去除該基板上剩餘之顆粒，其後塗佈一金屬氧化物組合物。
諸如石英之基板材料廣泛地應用於半導體工業中(例如在蝕刻處理室之介電質阻障)。通常必須機械地增強該基板之表面，以增大該表面區域。
可利用研磨材料加壓處理該基板表面而實現機械增強，其中該研磨材料處理通常稱為噴砂處理(bead blasting)，如美國專利第5,202,008號、第5,391,275號及第6,565,667號中所揭示者，該等美國專利以引用的方式併入本文中。
噴砂處理通常用來去除基板表面之現有鍍層，以及/或者藉由增加表面面積來製備表面，以增加新鍍層材料之黏著。但是，噴砂處理會產生包含小顆粒之表面，而對施加於該表面之鍍層有不利的影響。
與僅以噴砂處理所獲得之表面相比，隨後以強酸處理噴砂處理可除掉嵌入之顆粒以及鬆散片段，從而獲得更清潔之表面，如此已獲得一定成效。但是，噴砂處理與酸處理之結合並不總能夠從被處理之基板表面上去除所有顆粒。此外，該剩餘表面可能具有鋸齒狀部分，當進一步處理該基板時，有可能產生鬆散的顆粒。
例如，在半導體晶圓製造室中，通常將石英當作一種消耗組份，採用該室之目的是可從矽晶圓表面去除諸如二氧化矽、氧化銅等等之金屬氧化物。在此室中，射頻可激發氬原子，驅動它們以濺射蝕刻該晶圓之表面，從而去除表面氧化層。噴砂處理後之石英亦包括二氧化矽之小顆粒，其於電漿蝕刻處理時可能移位，並沈積於該矽晶圓之表面，產生缺陷。關於該室中噴砂處理之石英組份，本專利申請案特指一種藉由一電漿槍集中濺射至該基板材料表面之材料之噴砂處理後之石英的鍍層，其既增進該等從晶圓中蝕刻之材料之黏性，又可保存噴砂處理所產生之顆粒。施加鍍層係為了在施用噴槍內側形成電漿，而一般係施加諸如氫、氮、氬、氦及其混合之氣體，並經由該等氣體產生該電漿。實現無顆粒噴砂處理石英表面之先前方法，係對半導體材料之表面實施化學蝕刻，例如BOC集團公司之BOC Edwards Division分部所銷售者。
此種處理是一種應用，其中化學蝕刻後噴砂處理之金屬或絕緣材料，以去除嵌入雜質，並移除對該表面實施機械改進所產生之基板之鬆散片段。
在一些電漿蝕刻系統中，會遺留下基板材料之鬆散顆粒，其對基板及其將併入之半導體總成的完整性有不利影響。在化學蝕刻之後，粗糙化該表面與緊接著化學蝕刻之系統，已經提供此一基板材料之鬆散顆粒之改良的移除，但就某方面來說，基板包括一些顆粒狀物質或一些可產生微粒狀物質之小裂縫，而該微粒狀物質可於半導體總成之
進一步處理過程中移位。如前所述，此等顆粒對基板材料之功能，以及以該基板材料製造之半導體晶圓之功能，有不利的影響。
因此需要提供一種方法，藉由該方法可使一般適用於半導體工業之基板材料之表面，在表面粗糙化操作過程中大體上沒有基板材料之任何顆粒形成。還需要處理該基板材料之表面，以於隨後之半導體總成形成過程之步驟中，不會產生小顆粒。此種方法可確保該基板適用於半導體總成之製造。
本發明概言之係關於一種製造一適用於半導體製程中之基板的方法，在該半導體製程中，首先藉由一初始表面粗糙化操作來處理該基板材料之表面，接著進一步處理以去除在該表面粗糙化操作過程中形成之鬆散顆粒。最後在該粗糙化之表面鍍一層包括至少一金屬氧化物之鍍層組合物。此等金屬氧化物包括氧化鋁、氧化鋯、氧化釔、二氧化矽及其組合等等，其目的係提供一薄鍍層。
在本發明之一特定態樣中，提供了一種用於製造一適用於半導體製程之基板，該方法包括：a)粗糙化該基板材料之表面，以於其中產生微裂縫；b)處理該粗糙化表面，以至少實質上去除遺留於該粗糙化表面上之該基板材料之所有顆粒；及c)以一包含至少一金屬氧化物之鍍層組合物，塗佈該粗糙化之表面。
在本發明之一較佳實施例中，該鍍層組合物包括氧化鋯。
本發明概言之係關於一種製造一基板，使其適合用於半導體製程之方法，其中先將該基板之表面粗糙化，而最終塗佈一薄層鍍層組合物，該組合物宜為介電質，以提供基板材料之非導體表面，而適合於半導體總成內進行進一步處理。
該半導體材料之表面首先必須被粗糙化，以從其上去除對該基板材料之屬性有不利影響之表面物質，並改良該表面之黏性，使其適合於諸如晶圓等等之半導體總成之形成。該基板材料可為適於半導體工業中使用之任何材料，例如石英、陶瓷、包括氧化鋁之金屬氧化物、以及諸如鋁之金屬。石英係特別有用之基板材料，因為其係介電質，並且在製造時相對較純。
將該基板材料表面粗糙化之方式可以變化，但最好使用一般為珠狀之研磨劑材料，其可在特定之條件下，透過一噴嘴之壓力來施加，以產生一適用於半導體總成製造中之表面粗糙度。表面粗糙之程度一般是在180至320微英吋Ra範圍内，其中以200至300微英吋Ra範圍之内較佳，而以200至250微英吋Ra範圍之内更佳。藉由調節壓力、研磨粉尺寸，以及塗佈於該研磨材料之距離，可獲得此一表面粗糙情況。此等系統最好產生一粗糙化之表面，但是，其特徵為在該表面留下該基板材料之微小顆粒，包括聚積於該等微裂縫中之顆粒。
接著以一般包含相對高濃度之強酸處理粗糙化之基板材料，例如以硝酸及/或氫氟酸浸浴，這至少可在一定程度上將此等聚積之顆粒去除。強酸之一般濃度係從15至50容積百分比，其中以25至35容積百分比較佳。該酸浸浴包含足夠高濃度之強酸，以使其有助於去除至少部分遺留在該基板表面之基板材料顆粒。在一較佳之方法中，對該粗糙化之表面進行化學蝕刻，以去除嵌入之雜質，並去除對該表面實施機械改進所導致之該基板材料之鬆散片段。
雖然上述酸蝕刻處理系統可有效去除鬆散之顆粒，但是吾人已經觀察到，在進一步處理以製造半導體總成過程中，該粗糙化表面之微裂縫仍然可形成額外的顆粒。該等微裂縫的鋸齒邊緣塊可從表面移位或折斷，而在酸蝕刻處理過後，該等微裂縫本身將會引入不需要之鬆散顆粒。
根據本發明，至少已經實質上去除所有鬆散顆粒之該基板材料之粗糙化表面，可藉由對該粗糙化、酸蝕刻之表面塗佈一薄鍍層，而進一步得到處理，其中該鍍層宜為一介電鍍層，而塗佈該薄層可防止該基板材料之額外顆粒，從粗糙化表面上之微裂縫移位。
用於形成該薄鍍層之鍍層組合物可為任何塗層組合物，只要其可形成有效之鍍層(最好是介電質鍍層)，並且在進一步將該基板材料加工為半導體總成之過程中，可避免基板表面顆粒之移位。該鍍層須足夠厚，以填充並覆蓋該等微裂縫，厚度一般可厚達0.010英吋。該鍍層組合物選自包含二氧化矽之金屬氧化物鍍層。較佳之金屬氧化物鍍層包括
氧化鋯、氧化釔以及/或者氧化鋁。該鍍層組合物中宜含有氧化鋯，並作為一主要之成分。在本發明之一較佳形式中，該鍍層組合物將包含至少92%之氧化鋯。氧化鋯之所以是該鍍層組合物之一較佳組份，是因為其與其他金屬氧化物，例如氧化鋁相比，顯示出其具有較高之化學純度。氧化鋁通常包含少量氧化鈉。在電漿處理過程中，鈉會轉移到基板材料中。
該鍍層組合物最好以電漿方式施加，其形成過程概要地說明於該圖式中。參考該圖式，可從源6提供一合適之氣體以形成電漿，一般之氣體係氫、氮、氬、氦及其混合物，而藉此可建立用於產生該鍍層組合物電漿濺射4之電漿濺射總成2。該電漿氣體係與該鍍層組合物材料8(例如氧化鋯)相結合，該鍍層組合物材料係以固態形式提供至電漿槍9，而一般是以粉末之形式，其中在電漿槍9之電漿室中產生的高溫(例如10,000℉至30,000℉)將熔化該粉末，而得以施加該鍍層組合物至先前粗糙化之基板作為一薄層，其中該基板如藉由噴砂處理而粗糙化之基板。
從源10向該電漿槍9提供壓縮空氣或其他合適之壓縮氣體，以於該電漿槍中將熔化物質推進至該基板之表面。另外，從一冷凍器(icer)12提供冰晶形式之凍結水給該電漿槍，以控制該電漿槍所提供之電漿濺射之溫度。
一般足以填充該基板之粗糙化表面中之微裂縫之該鍍層組合物的厚度，通常厚達0.005英吋，甚至厚達0.006英吋。因此，該鍍層組合物通常將具有厚達0.010英寸之厚度。填
充微裂縫可防止微裂縫之鋸齒邊緣部分移位而形成鬆散顆粒。最終鍍敷之表面除了可避免從該等微裂縫之鋸齒部分形成不需要之顆粒以外，還可提供光滑之基板表面，而提供更佳之黏附特性，有利於隨後形成半導體總成，並顯著地減少該表面上之不需要氣體之存在(亦即，減少除氣)。
在本發明之進一步與較佳實施例中，在實質上將該基板材料之所有鬆散顆粒從該粗糙化基板表面上去除後，可以超音波方式清潔該粗糙化基板，而一般是在去離子水中清潔，其中又以浸沒於一超音波清潔箱中進行清潔較佳，該超音波清潔箱之類型如美國專利第5,651,797號所述，該專利以引用的方式併入本文中。
以碳化矽珠狀物對一由石英所構成之薄晶圓基板(樣品1)實施噴砂處理，並採用0.03英吋切割長度，以生成180至220微英吋Ra範圍之表面粗糙度，其中該薄晶圓基板(樣品1)具有一層二氧化矽。接著以包含33% v/v的70%強硝酸、33% v/v的69%強氫氟酸和34%的去離子水之酸浴處理經噴砂處理之該晶圓1至2分鐘。
在美國專利第5,651,797號所描述之超音波清潔箱中，以去離子水沖洗如此處理之晶圓，並在大於5.0 Meg Ohm-cm比阻抗值、75-90℉溫度之去離子水中，持續超音波清潔兩分鐘。然後以0.01微米過濾之氮乾燥，並在氮環境中，於250℉溫度下烘烤2小時。
在如此乾燥並烘烤之晶圓上塗佈一鍍層組合物，該鍍層
組合物中包含多於98%之氧化鋁，以在具有0.002英寸厚度之晶圓表面上，形成一具有足夠黏性之鍍層，並在隨後形成半導體總成之處理過程中，至少實質上避免顆粒移位。
樣品2-18之製備與樣品1之方式大致相同，不同之處在於晶圓之鍍層材料、鍍層厚度及表面粗糙度有所變化，詳如表1所示。
樣品2-18之每一個展示鍍層，其具有足夠之黏性，以於隨後形成半導體總成之處理過程中，至少實質上避免顆粒移位。和氧化鋯鍍層相比，氧化鋁鍍層較佳，因為其在該基板材料之表面上，展示較小之除氣、較小之水蒸汽保持力及較少保持之陰離子及陽離子種類。
2‧‧‧電漿濺射總成
4‧‧‧電漿濺射
6‧‧‧氣體源
8‧‧‧鍍層組合物材料
9‧‧‧電漿槍
10‧‧‧壓縮氣體源
12‧‧‧冷凍器
所附圖式係本發明一實施例之示意圖，而非有意限制由本申請案之申請專利範圍所包含之本發明。
該圖係一電漿濺射總成之組件示意圖，其用於根據本發明，對粗糙化基板表面，施加一鍍層組合物。
2‧‧‧電漿濺射總成
4‧‧‧電漿濺射
6‧‧‧氣體源
8‧‧‧鍍層組合物材料
9‧‧‧電漿槍
10‧‧‧壓縮氣體源
12‧‧‧冷凍器
Claims (19)
- 一種用於製造適合用於半導體製程之基板之方法，該方法包括：a)使該基板材料之表面粗糙化，以於其中產生微裂縫；b)處理該粗糙化表面，藉由將該基板浸沒於一包含15至50容積百分比的強酸浸沒浴中1至2分鐘以至少實質上去除該基板材料遺留在該粗糙化表面上之所有顆粒；以及c)以一包含至少一金屬氧化物之鍍層組合物，塗佈該粗糙化表面，其中該塗佈該粗糙化表面之步驟包括產生一包含一電漿產生氣體及該鍍層組合物之電漿，並以一足以將該鍍層組合物施加於該粗糙化表面之方式，將該電漿引導至該粗糙化表面。
- 如請求項1所述之方法，其中該基板由一材料構成，該材料係選自由石英、陶瓷、金屬及金屬氧化物所組成之群。
- 如請求項1所述之方法，其中該鍍層組合物係選擇自二氧化矽、氧化鋁、氧化鋯、氧化釔及其組合所組成之群。
- 根據請求項3所述之方法，其中該鍍層組合物包含氧化鋯及氧化釔。
- 如請求項1所述之方法，進一步包括在壓縮氣體下產生該電漿。
- 如請求項1所述之方法，包括在約10,000至30,000℉之溫度下產生該電漿。
- 如請求項1所述之方法，其中該電漿產生氣體係選自由氫、氮、氬、氦及其混合物所組成之群。
- 如請求項1所述之方法，其中該粗糙化該基板材料之該表面之步驟包括：a)使該基板材料與一粗糙化材料之固體顆粒相接觸，以產生一範圍約180至320微英吋Ra之表面粗糙度。
- 如請求項8所述之方法，其中該表面粗糙度係200-300微英吋Ra。
- 如請求項1所述之方法，其中該強酸之濃度係從25至35容積百分比。
- 如請求項1所述之方法，其中該浸沒浴包括硝酸及氫氟酸。
- 如請求項1所述之方法，進一步包括從該浸沒浴中移除該基板，以及清潔該基板。
- 如請求項1所述之方法，其中該等微裂縫之深度約達0.005英吋。
- 如請求項1所述之方法，其中該等微裂縫之深度約達0.006英吋。
- 如請求項1所述之方法，其中該鍍層之厚度足以填充並覆蓋該等微裂縫。
- 如請求項15所述之方法，其中該鍍層之厚度約厚達0.010英吋。
- 如請求項1所述之方法，其中該塗佈該粗糙化表面之步驟包括以一包含一電漿氣體之電漿的形式，施加該鍍層組 合物。
- 如請求項17所述之方法，該方法包括在10,000℉至30,000℉之溫度下，以一電漿形式施加該鍍層組合物。
- 如請求項1之所述方法，其中該鍍層係一介電質鍍層。
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020094686A1 (en) * | 1999-06-28 | 2002-07-18 | Gorczyca Thomas Bert | Semiconductor processing article |
| US20030129772A1 (en) * | 2001-12-07 | 2003-07-10 | Komico Co., Ltd | Method of fabricating and repairing ceramic components for semiconductor fabrication using plasma spray process |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200535926A (en) | 2005-11-01 |
| JP2007530788A (ja) | 2007-11-01 |
| KR20050094766A (ko) | 2005-09-28 |
| IL178084A (en) | 2013-09-30 |
| IL178084A0 (en) | 2006-12-31 |
| WO2005098930A2 (en) | 2005-10-20 |
| CN101304815A (zh) | 2008-11-12 |
| US20050215059A1 (en) | 2005-09-29 |
| JP4785834B2 (ja) | 2011-10-05 |
| EP1580292A1 (en) | 2005-09-28 |
| WO2005098930A3 (en) | 2006-11-09 |
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