JP2007530788A - 半導体被覆基板の製造方法 - Google Patents
半導体被覆基板の製造方法 Download PDFInfo
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- JP2007530788A JP2007530788A JP2007505028A JP2007505028A JP2007530788A JP 2007530788 A JP2007530788 A JP 2007530788A JP 2007505028 A JP2007505028 A JP 2007505028A JP 2007505028 A JP2007505028 A JP 2007505028A JP 2007530788 A JP2007530788 A JP 2007530788A
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- JP
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- Prior art keywords
- coating
- substrate
- plasma
- coating composition
- roughened surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
- C23C4/11—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
- C23C4/134—Plasma spraying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
Abstract
Description
a)基板材料の表面を粗面化処理して、ミクロ割れを発生させる工程と
b)粗面化処理された表面を処理して、粗面化処理された表面上に残留している基板材料の少なくとも実質的にすべての粒子を除去する工程と、
c)粗面化処理された表面を、少なくとも1種の金属酸化物を含むコーティング組成物で被覆する工程と、
を含む方法が提供される。
本発明は、概して、基板表面を最初に粗面化処理して、次いで、半導体アセンブリにまで更に処理するに適する基板材料の非導電性表面を提供するために好ましくは誘電体であるコーティング組成物の薄層で最終的に被覆する、半導体処理において使用するに適する基板を製造する方法に関する。
Claims (22)
- 半導体処理において使用するに適する基板の製造方法であって、
a)基板材料の表面を粗面化処理して、ミクロ割れを生じさせる工程と、
b)粗面化処理された表面を処理して、粗面化処理された表面上に残っている基板材料の少なくとも実質的にすべての粒子を除去する工程と、
c)粗面化処理された表面を、少なくとも1種の金属酸化物を含むコーティング組成物で被覆する工程と、
を含む方法。 - 前記基板は、石英、セラミック、金属及び金属酸化物からなる群より選択される物質から構成される、請求項1に記載の方法。
- 前記コーティング組成物は、二酸化珪素、酸化アルミニウム、酸化ジルコニウム、酸化イットリウム及びこれらの組み合わせから選択される、請求項1に記載の方法。
- 前記コーティング組成物は、酸化ジルコニウム及び酸化イットリウムを含む、請求項3に記載の方法。
- 前記粗面化処理された表面を被覆する工程は、プラズマ発生ガス及び前記コーティング組成物を含むプラズマを発生させ、該コーティング組成物を該粗面化処理された表面に塗膜するに十分な態様で該プラズマを該粗面化処理された表面に誘導することを含む、請求項1に記載の方法。
- 前記プラズマを圧縮空気の存在下で発生させることをさらに含む、請求項5に記載の方法。
- 前記プラズマを約5,537.8℃〜16,648.9℃(10,000〜30,000゜F)の温度で発生させることを含む、請求項5に記載の方法。
- 前記プラズマ発生ガスは、水素、窒素、アルゴン、ヘリウム及びこれらの混合物からなる群より選択される、請求項5に記載の方法。
- 前記基板材料の表面を粗面化処理する工程は、
a)前記基板材料を粗面化処理する物質の固体粒子と接触させて、表面粗さを約180〜320μインチRa(micro inch Ra)の範囲とすることを含む、請求項1に記載の方法。 - 前記表面粗さは200〜300μインチRa(micro inch Ra)である、請求項9に記載の方法。
- 前記粗面化処理された表面を処理する工程は、前記基板を高濃度強酸含有薬浴中に浸漬させることを含む、請求項1に記載の方法。
- 前記強酸の濃度は15〜50 vol%である、請求項11に記載の方法。
- 前記強酸の濃度は25〜35 vol%である、請求項11に記載の方法。
- 前記薬浴は、硝酸及びフッ化水素酸を含む、請求項11に記載の方法。
- 前記基板を前記薬浴から取り出し、前記基板を洗浄することをさらに含む、請求項11に記載の方法。
- 前記ミクロ割れの深さは約0.013cm(0.005インチ)以下である、請求項1に記載の方法。
- 前記ミクロ割れの深さは約0.015cm(0.006インチ)以下である、請求項1に記載の方法。
- 前記コーティングの厚みは、前記ミクロ割れを充填して覆うに十分である、請求項1に記載の方法。
- 前記コーティングの厚みは約0.025cm(0.010)インチ以下である、請求項18に記載の方法。
- 前記粗面化処理された表面を被覆する工程は、プラズマガスを含むプラズマの形態で前記コーティング組成物を塗膜することを含む、請求項1に記載の方法。
- 5,537.8℃〜16,648.9℃(10,000゜F〜30,000゜F)の温度で、プラズマの形態で前記コーティング組成物を塗膜することを含む、請求項20に記載の方法。
- 前記コーティングは誘電体コーティングである、請求項1に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/807,716 | 2004-03-24 | ||
US10/807,716 US20050215059A1 (en) | 2004-03-24 | 2004-03-24 | Process for producing semi-conductor coated substrate |
PCT/US2005/009108 WO2005098930A2 (en) | 2004-03-24 | 2005-03-17 | Process for producing semi-conductor coated substrate |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007530788A true JP2007530788A (ja) | 2007-11-01 |
JP2007530788A5 JP2007530788A5 (ja) | 2008-04-24 |
JP4785834B2 JP4785834B2 (ja) | 2011-10-05 |
Family
ID=34862056
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007505028A Active JP4785834B2 (ja) | 2004-03-24 | 2005-03-17 | 半導体被覆基板の製造方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20050215059A1 (ja) |
EP (1) | EP1580292A1 (ja) |
JP (1) | JP4785834B2 (ja) |
KR (1) | KR20050094766A (ja) |
CN (1) | CN101304815A (ja) |
IL (1) | IL178084A (ja) |
TW (1) | TWI382451B (ja) |
WO (1) | WO2005098930A2 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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US8067067B2 (en) * | 2002-02-14 | 2011-11-29 | Applied Materials, Inc. | Clean, dense yttrium oxide coating protecting semiconductor processing apparatus |
US10242888B2 (en) | 2007-04-27 | 2019-03-26 | Applied Materials, Inc. | Semiconductor processing apparatus with a ceramic-comprising surface which exhibits fracture toughness and halogen plasma resistance |
US10622194B2 (en) | 2007-04-27 | 2020-04-14 | Applied Materials, Inc. | Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance |
CN102006838B (zh) * | 2007-09-13 | 2014-07-23 | Deru股份公司 | 内置式假肢部件 |
US9090046B2 (en) * | 2012-04-16 | 2015-07-28 | Applied Materials, Inc. | Ceramic coated article and process for applying ceramic coating |
CN109112464A (zh) * | 2018-09-20 | 2019-01-01 | 安徽富乐德科技发展有限公司 | 一种半导体清洗腔陶瓷溶射层的制备方法 |
CN114381683B (zh) * | 2020-10-20 | 2024-04-12 | 中国兵器工业第五九研究所 | 基体防护涂层的制备方法 |
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JP2003212598A (ja) * | 2001-11-13 | 2003-07-30 | Tosoh Corp | 石英ガラス部品及びセラミック部品並びにそれらの製造方法 |
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-
2004
- 2004-03-24 US US10/807,716 patent/US20050215059A1/en not_active Abandoned
- 2004-12-30 TW TW093141280A patent/TWI382451B/zh active
-
2005
- 2005-01-17 EP EP05250218A patent/EP1580292A1/en not_active Ceased
- 2005-01-21 KR KR1020050005915A patent/KR20050094766A/ko not_active Application Discontinuation
- 2005-03-17 WO PCT/US2005/009108 patent/WO2005098930A2/en active Application Filing
- 2005-03-17 CN CNA2005800088863A patent/CN101304815A/zh active Pending
- 2005-03-17 JP JP2007505028A patent/JP4785834B2/ja active Active
-
2006
- 2006-09-14 IL IL178084A patent/IL178084A/en active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5172934A (ja) * | 1974-12-23 | 1976-06-24 | Mitsubishi Heavy Ind Ltd | |
JPH0598412A (ja) * | 1991-10-07 | 1993-04-20 | Nippon Steel Corp | 被溶射材料の前処理方法 |
JP2002249864A (ja) * | 2000-04-18 | 2002-09-06 | Ngk Insulators Ltd | 耐ハロゲンガスプラズマ用部材およびその製造方法 |
JP2003212598A (ja) * | 2001-11-13 | 2003-07-30 | Tosoh Corp | 石英ガラス部品及びセラミック部品並びにそれらの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2005098930A2 (en) | 2005-10-20 |
CN101304815A (zh) | 2008-11-12 |
IL178084A0 (en) | 2006-12-31 |
EP1580292A1 (en) | 2005-09-28 |
KR20050094766A (ko) | 2005-09-28 |
JP4785834B2 (ja) | 2011-10-05 |
US20050215059A1 (en) | 2005-09-29 |
WO2005098930A3 (en) | 2006-11-09 |
TWI382451B (zh) | 2013-01-11 |
TW200535926A (en) | 2005-11-01 |
IL178084A (en) | 2013-09-30 |
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