IL178084A - A process to create a substrate coated with a semiconductor - Google Patents

A process to create a substrate coated with a semiconductor

Info

Publication number
IL178084A
IL178084A IL178084A IL17808406A IL178084A IL 178084 A IL178084 A IL 178084A IL 178084 A IL178084 A IL 178084A IL 17808406 A IL17808406 A IL 17808406A IL 178084 A IL178084 A IL 178084A
Authority
IL
Israel
Prior art keywords
coated substrate
conductor coated
producing semi
semi
producing
Prior art date
Application number
IL178084A
Other languages
English (en)
Hebrew (he)
Other versions
IL178084A0 (en
Original Assignee
Quantum Global Tech Llc
Applied Materials Inc
Boc Groupinc
Boc Edwards Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Quantum Global Tech Llc, Applied Materials Inc, Boc Groupinc, Boc Edwards Inc filed Critical Quantum Global Tech Llc
Publication of IL178084A0 publication Critical patent/IL178084A0/en
Publication of IL178084A publication Critical patent/IL178084A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • C23C4/11—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/134—Plasma spraying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Coating By Spraying Or Casting (AREA)
  • ing And Chemical Polishing (AREA)
  • Chemically Coating (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
IL178084A 2004-03-24 2006-09-14 A process to create a substrate coated with a semiconductor IL178084A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/807,716 US20050215059A1 (en) 2004-03-24 2004-03-24 Process for producing semi-conductor coated substrate
PCT/US2005/009108 WO2005098930A2 (en) 2004-03-24 2005-03-17 Process for producing semi-conductor coated substrate

Publications (2)

Publication Number Publication Date
IL178084A0 IL178084A0 (en) 2006-12-31
IL178084A true IL178084A (en) 2013-09-30

Family

ID=34862056

Family Applications (1)

Application Number Title Priority Date Filing Date
IL178084A IL178084A (en) 2004-03-24 2006-09-14 A process to create a substrate coated with a semiconductor

Country Status (8)

Country Link
US (1) US20050215059A1 (enExample)
EP (1) EP1580292A1 (enExample)
JP (1) JP4785834B2 (enExample)
KR (1) KR20050094766A (enExample)
CN (1) CN101304815A (enExample)
IL (1) IL178084A (enExample)
TW (1) TWI382451B (enExample)
WO (1) WO2005098930A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8067067B2 (en) * 2002-02-14 2011-11-29 Applied Materials, Inc. Clean, dense yttrium oxide coating protecting semiconductor processing apparatus
US10242888B2 (en) 2007-04-27 2019-03-26 Applied Materials, Inc. Semiconductor processing apparatus with a ceramic-comprising surface which exhibits fracture toughness and halogen plasma resistance
US10622194B2 (en) 2007-04-27 2020-04-14 Applied Materials, Inc. Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance
ES2557179T3 (es) 2007-09-13 2016-01-22 Deru Gmbh Componente de endoprótesis
US9090046B2 (en) * 2012-04-16 2015-07-28 Applied Materials, Inc. Ceramic coated article and process for applying ceramic coating
CN109112464A (zh) * 2018-09-20 2019-01-01 安徽富乐德科技发展有限公司 一种半导体清洗腔陶瓷溶射层的制备方法
CN114381683B (zh) * 2020-10-20 2024-04-12 中国兵器工业第五九研究所 基体防护涂层的制备方法

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US4349408A (en) * 1981-03-26 1982-09-14 Rca Corporation Method of depositing a refractory metal on a semiconductor substrate
US4656730A (en) * 1984-11-23 1987-04-14 American Telephone And Telegraph Company, At&T Bell Laboratories Method for fabricating CMOS devices
GB2185758B (en) * 1985-12-28 1990-09-05 Canon Kk Method for forming deposited film
US5202008A (en) * 1990-03-02 1993-04-13 Applied Materials, Inc. Method for preparing a shield to reduce particles in a physical vapor deposition chamber
US5391275A (en) * 1990-03-02 1995-02-21 Applied Materials, Inc. Method for preparing a shield to reduce particles in a physical vapor deposition chamber
JPH0598412A (ja) * 1991-10-07 1993-04-20 Nippon Steel Corp 被溶射材料の前処理方法
FI92897C (fi) * 1993-07-20 1995-01-10 Planar International Oy Ltd Menetelmä kerrosrakenteen valmistamiseksi elektroluminenssikomponentteja varten
JP3347555B2 (ja) * 1994-12-01 2002-11-20 キヤノン株式会社 リチウム二次電池の負極の作製方法
US5651797A (en) * 1995-08-07 1997-07-29 Joray Corporation Apparatus and method for the immersion cleaning and transport of semiconductor components
US5788304A (en) * 1996-05-17 1998-08-04 Micron Technology, Inc. Wafer carrier having both a rigid structure and resistance to corrosive environments
US5916454A (en) * 1996-08-30 1999-06-29 Lam Research Corporation Methods and apparatus for reducing byproduct particle generation in a plasma processing chamber
JPH1146006A (ja) * 1997-07-25 1999-02-16 Canon Inc 光起電力素子およびその製造方法
US6087191A (en) * 1998-01-22 2000-07-11 International Business Machines Corporation Method for repairing surface defects
US6221269B1 (en) * 1999-01-19 2001-04-24 International Business Machines Corporation Method of etching molybdenum metal from substrates
US6368410B1 (en) * 1999-06-28 2002-04-09 General Electric Company Semiconductor processing article
US6504233B1 (en) * 1999-06-28 2003-01-07 General Electric Company Semiconductor processing component
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TW503449B (en) * 2000-04-18 2002-09-21 Ngk Insulators Ltd Halogen gas plasma-resistive members and method for producing the same, laminates, and corrosion-resistant members
JP2002249864A (ja) * 2000-04-18 2002-09-06 Ngk Insulators Ltd 耐ハロゲンガスプラズマ用部材およびその製造方法
WO2002040732A1 (en) * 2000-11-15 2002-05-23 G.T. Equipment Technologies Inc. A protective layer for quartz crucibles used for silicon crystallization
US6805952B2 (en) * 2000-12-29 2004-10-19 Lam Research Corporation Low contamination plasma chamber components and methods for making the same
WO2002090008A1 (fr) * 2001-05-01 2002-11-14 Center For Advanced Science And Technology Incubation, Ltd. Procede de nettoyage d'une structure, procede anticorrosion et structure mettant en oeuvre ceux-ci
US6503824B1 (en) * 2001-10-12 2003-01-07 Mosel Vitelic, Inc. Forming conductive layers on insulators by physical vapor deposition
JP2003212598A (ja) * 2001-11-13 2003-07-30 Tosoh Corp 石英ガラス部品及びセラミック部品並びにそれらの製造方法
KR100440500B1 (ko) * 2001-12-07 2004-07-15 주식회사 코미코 플라즈마 스프레이 방식을 이용한 세라믹 반도체 부품의제조 및 재생 방법
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Also Published As

Publication number Publication date
CN101304815A (zh) 2008-11-12
US20050215059A1 (en) 2005-09-29
KR20050094766A (ko) 2005-09-28
EP1580292A1 (en) 2005-09-28
WO2005098930A3 (en) 2006-11-09
IL178084A0 (en) 2006-12-31
WO2005098930A2 (en) 2005-10-20
TWI382451B (zh) 2013-01-11
TW200535926A (en) 2005-11-01
JP2007530788A (ja) 2007-11-01
JP4785834B2 (ja) 2011-10-05

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