TWI369728B - Substrate processing apparatus, liquid film freezing method and substrate processing method - Google Patents

Substrate processing apparatus, liquid film freezing method and substrate processing method

Info

Publication number
TWI369728B
TWI369728B TW096117265A TW96117265A TWI369728B TW I369728 B TWI369728 B TW I369728B TW 096117265 A TW096117265 A TW 096117265A TW 96117265 A TW96117265 A TW 96117265A TW I369728 B TWI369728 B TW I369728B
Authority
TW
Taiwan
Prior art keywords
substrate processing
liquid film
processing apparatus
film freezing
freezing method
Prior art date
Application number
TW096117265A
Other languages
English (en)
Other versions
TW200816298A (en
Inventor
Katsuhiko Miya
Naozumi Fujiwara
Akira Izumi
Original Assignee
Dainippon Screen Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dainippon Screen Mfg filed Critical Dainippon Screen Mfg
Publication of TW200816298A publication Critical patent/TW200816298A/zh
Application granted granted Critical
Publication of TWI369728B publication Critical patent/TWI369728B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0014—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by incorporation in a layer which is removed with the contaminants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer
TW096117265A 2006-09-13 2007-05-15 Substrate processing apparatus, liquid film freezing method and substrate processing method TWI369728B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006248181A JP4767138B2 (ja) 2006-09-13 2006-09-13 基板処理装置、液膜凍結方法および基板処理方法

Publications (2)

Publication Number Publication Date
TW200816298A TW200816298A (en) 2008-04-01
TWI369728B true TWI369728B (en) 2012-08-01

Family

ID=39168358

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096117265A TWI369728B (en) 2006-09-13 2007-05-15 Substrate processing apparatus, liquid film freezing method and substrate processing method

Country Status (5)

Country Link
US (1) US8029622B2 (zh)
JP (1) JP4767138B2 (zh)
KR (1) KR100877276B1 (zh)
CN (1) CN100543931C (zh)
TW (1) TWI369728B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10065218B2 (en) 2015-03-24 2018-09-04 SCREEN Holdings Co., Ltd. Substrate processing method and substrate processing apparatus

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JP4877783B2 (ja) * 2006-11-28 2012-02-15 大日本スクリーン製造株式会社 裏面洗浄装置、基板処理装置および裏面洗浄方法
JP4707730B2 (ja) * 2008-03-31 2011-06-22 株式会社東芝 半導体ウェーハの洗浄装置、及び半導体ウェーハの洗浄方法
US8567420B2 (en) 2008-03-31 2013-10-29 Kabushiki Kaisha Toshiba Cleaning apparatus for semiconductor wafer
JP5114278B2 (ja) * 2008-04-16 2013-01-09 大日本スクリーン製造株式会社 基板処理方法および基板処理装置
JP5243165B2 (ja) * 2008-09-25 2013-07-24 大日本スクリーン製造株式会社 基板洗浄方法および基板洗浄装置
JP5185046B2 (ja) * 2008-09-29 2013-04-17 大日本スクリーン製造株式会社 基板洗浄装置
JP5222110B2 (ja) * 2008-11-21 2013-06-26 大日本スクリーン製造株式会社 基板処理装置
JP5409413B2 (ja) * 2010-01-26 2014-02-05 日本パイオニクス株式会社 Ｉｉｉ族窒化物半導体の気相成長装置
US20110180113A1 (en) * 2010-01-28 2011-07-28 Chin-Cheng Chien Method of wafer cleaning and apparatus of wafer cleaning
TWI421927B (zh) * 2010-03-09 2014-01-01 Dainippon Screen Mfg 基板清洗方法及基板清洗裝置
JP5647845B2 (ja) 2010-09-29 2015-01-07 株式会社Ｓｃｒｅｅｎホールディングス 基板乾燥装置及び基板乾燥方法
JP5627393B2 (ja) * 2010-10-28 2014-11-19 大日本スクリーン製造株式会社 基板処理方法および基板処理装置
TWI480937B (zh) * 2011-01-06 2015-04-11 Screen Holdings Co Ltd 基板處理方法及基板處理裝置
TWI563550B (en) * 2011-01-06 2016-12-21 Screen Holdings Co Ltd Substrate processing method and substrate processing apparatus
JP5715831B2 (ja) 2011-01-20 2015-05-13 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP5912325B2 (ja) * 2011-07-28 2016-04-27 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP5865073B2 (ja) * 2011-12-28 2016-02-17 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
CN103187340B (zh) * 2011-12-28 2016-08-03 斯克林集团公司 基板处理装置以及基板处理方法
KR101344921B1 (ko) * 2012-03-28 2013-12-27 세메스 주식회사 기판처리장치 및 방법
JP6090837B2 (ja) 2012-06-13 2017-03-08 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
US8691022B1 (en) * 2012-12-18 2014-04-08 Lam Research Ag Method and apparatus for processing wafer-shaped articles
TWI563560B (en) * 2013-07-16 2016-12-21 Screen Holdings Co Ltd Substrate processing apparatus and substrate processing method
US10622329B2 (en) * 2014-10-27 2020-04-14 Asm Technology Singapore Pte Ltd Bond head cooling apparatus
US20160172184A1 (en) * 2014-12-16 2016-06-16 United Microelectronics Corp. Method for cleaning a wafer
JP6464808B2 (ja) * 2015-02-23 2019-02-06 セイコーエプソン株式会社 液体噴射装置
JP6557625B2 (ja) 2016-03-23 2019-08-07 東芝メモリ株式会社 基板の生産方法、および基板の生産システム
JP6653228B2 (ja) 2016-08-09 2020-02-26 キオクシア株式会社 基板の洗浄方法および基板処理装置
JP6596396B2 (ja) 2016-08-09 2019-10-23 東芝メモリ株式会社 基板の洗浄方法および洗浄装置
JP6811619B2 (ja) * 2017-01-12 2021-01-13 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
CN107159668B (zh) * 2017-07-25 2019-06-18 重庆华瑞玻璃有限公司 一种玻璃自动清洗装置
JP2019046986A (ja) * 2017-09-04 2019-03-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6986422B2 (ja) * 2017-11-14 2021-12-22 株式会社デンソーテン 気体噴射装置および気体噴射システム
US11227778B2 (en) * 2019-08-12 2022-01-18 Nanya Technology Corporation Wafer cleaning apparatus and operation method of the same
KR102316239B1 (ko) 2019-10-17 2021-10-25 세메스 주식회사 기판 처리 장치 및 방법
CN111522160B (zh) * 2020-05-29 2023-03-21 广东华中科技大学工业技术研究院 一种采用雾化冷冻和智能定位的液晶屏贴合装备

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10065218B2 (en) 2015-03-24 2018-09-04 SCREEN Holdings Co., Ltd. Substrate processing method and substrate processing apparatus

Also Published As

Publication number Publication date
CN101145502A (zh) 2008-03-19
CN100543931C (zh) 2009-09-23
JP2008071875A (ja) 2008-03-27
US20080060686A1 (en) 2008-03-13
TW200816298A (en) 2008-04-01
US8029622B2 (en) 2011-10-04
KR20080024431A (ko) 2008-03-18
JP4767138B2 (ja) 2011-09-07
KR100877276B1 (ko) 2009-01-07

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees