TWI369000B - Semiconductor light emiting element and method for making the same - Google Patents

Semiconductor light emiting element and method for making the same

Info

Publication number
TWI369000B
TWI369000B TW094101640A TW94101640A TWI369000B TW I369000 B TWI369000 B TW I369000B TW 094101640 A TW094101640 A TW 094101640A TW 94101640 A TW94101640 A TW 94101640A TW I369000 B TWI369000 B TW I369000B
Authority
TW
Taiwan
Prior art keywords
making
same
semiconductor light
light emiting
emiting element
Prior art date
Application number
TW094101640A
Other languages
English (en)
Other versions
TW200531313A (en
Inventor
Koichiro Deguchi
Hisashi Kasai
Takeshi Kususe
Koji Honjo
Takao Yamada
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Publication of TW200531313A publication Critical patent/TW200531313A/zh
Application granted granted Critical
Publication of TWI369000B publication Critical patent/TWI369000B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
TW094101640A 2004-01-20 2005-01-20 Semiconductor light emiting element and method for making the same TWI369000B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004012370 2004-01-20
JP2004100622 2004-03-30

Publications (2)

Publication Number Publication Date
TW200531313A TW200531313A (en) 2005-09-16
TWI369000B true TWI369000B (en) 2012-07-21

Family

ID=34752130

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094101640A TWI369000B (en) 2004-01-20 2005-01-20 Semiconductor light emiting element and method for making the same

Country Status (5)

Country Link
US (1) US7288797B2 (zh)
EP (1) EP1708284B1 (zh)
JP (1) JP4765632B2 (zh)
TW (1) TWI369000B (zh)
WO (1) WO2005069388A1 (zh)

Families Citing this family (90)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050034936A (ko) * 2003-10-10 2005-04-15 삼성전기주식회사 형광체를 이용한 파장변환형 발광 다이오드 패키지 및제조방법
JP4386185B2 (ja) * 2004-07-28 2009-12-16 サンケン電気株式会社 窒化物半導体装置
TWI246210B (en) * 2005-04-28 2005-12-21 Epitech Corp Ltd Lateral current blocking light emitting diode and method for manufacturing the same
JP2006344925A (ja) * 2005-05-11 2006-12-21 Sharp Corp 発光素子搭載用フレームおよび発光装置
DE112006001414A5 (de) * 2005-05-30 2008-03-06 Osram Opto Semiconductors Gmbh Gehäusekörper und Verfahren zu dessen Herstellung
US8272758B2 (en) 2005-06-07 2012-09-25 Oree, Inc. Illumination apparatus and methods of forming the same
US8215815B2 (en) 2005-06-07 2012-07-10 Oree, Inc. Illumination apparatus and methods of forming the same
WO2006131924A2 (en) 2005-06-07 2006-12-14 Oree, Advanced Illumination Solutions Inc. Illumination apparatus
JP4945106B2 (ja) * 2005-09-08 2012-06-06 スタンレー電気株式会社 半導体発光装置
KR100961034B1 (ko) * 2005-09-20 2010-06-01 쇼와 덴코 가부시키가이샤 질화물계 반도체 발광 소자 및 그 제조 방법
JP4476912B2 (ja) * 2005-09-29 2010-06-09 株式会社東芝 半導体発光素子およびその製造方法
KR100661614B1 (ko) * 2005-10-07 2006-12-26 삼성전기주식회사 질화물계 반도체 발광소자 및 그 제조방법
EP1970968B1 (en) * 2005-12-12 2016-07-06 Nichia Corporation Light emitting semiconductor device
JP4417906B2 (ja) * 2005-12-16 2010-02-17 株式会社東芝 発光装置及びその製造方法
JP4922611B2 (ja) * 2005-12-26 2012-04-25 学校法人東京理科大学 酸化亜鉛光デバイス、酸化亜鉛光デバイスの製造方法、および酸化亜鉛光デバイスの利用方法
JP2009530798A (ja) 2006-01-05 2009-08-27 イルミテックス， インコーポレイテッド Ｌｅｄから光を導くための独立した光学デバイス
JP2007194385A (ja) * 2006-01-19 2007-08-02 Stanley Electric Co Ltd 半導体発光装置及び半導体発光装置の製造方法
US8044412B2 (en) 2006-01-20 2011-10-25 Taiwan Semiconductor Manufacturing Company, Ltd Package for a light emitting element
JP4933130B2 (ja) * 2006-02-16 2012-05-16 昭和電工株式会社 ＧａＮ系半導体発光素子およびその製造方法
JP5047516B2 (ja) * 2006-03-23 2012-10-10 昭和電工株式会社 窒化ガリウム系化合物半導体発光素子の製造方法、窒化ガリウム系化合物半導体発光素子及びそれを用いたランプ
TWI303115B (en) * 2006-04-13 2008-11-11 Epistar Corp Semiconductor light emitting device
KR100731677B1 (ko) * 2006-04-21 2007-06-22 서울반도체 주식회사 표면처리된 수지 봉지재를 갖는 발광 다이오드 패키지제조방법 및 그것에 의해 제조된 패키지
US20070295951A1 (en) * 2006-06-26 2007-12-27 Jen-Inn Chyi Light-emitting diode incorporating an array of light extracting spots
JP2008060542A (ja) * 2006-08-03 2008-03-13 Toyoda Gosei Co Ltd 発光装置、発光装置の製造方法、及びこれを備えた光源装置
JP2008060286A (ja) * 2006-08-31 2008-03-13 Toyoda Gosei Co Ltd 半導体発光素子及びその製造方法
US7789531B2 (en) 2006-10-02 2010-09-07 Illumitex, Inc. LED system and method
JP4948134B2 (ja) * 2006-11-22 2012-06-06 シャープ株式会社 窒化物半導体発光素子
US7663148B2 (en) * 2006-12-22 2010-02-16 Philips Lumileds Lighting Company, Llc III-nitride light emitting device with reduced strain light emitting layer
JP5092419B2 (ja) * 2007-01-24 2012-12-05 三菱化学株式会社 ＧａＮ系発光ダイオード素子
TWI396297B (zh) * 2007-01-24 2013-05-11 Tera Xtal Technology Corp 發光二極體結構及其製造方法
CN102779918B (zh) 2007-02-01 2015-09-02 日亚化学工业株式会社 半导体发光元件
JP2008294188A (ja) * 2007-05-24 2008-12-04 Toyoda Gosei Co Ltd 半導体発光素子及びその製造方法
CN101320771A (zh) * 2007-06-04 2008-12-10 富士迈半导体精密工业（上海）有限公司 半导体发光元件
US7759670B2 (en) * 2007-06-12 2010-07-20 SemiLEDs Optoelectronics Co., Ltd. Vertical LED with current guiding structure
US8546818B2 (en) 2007-06-12 2013-10-01 SemiLEDs Optoelectronics Co., Ltd. Vertical LED with current-guiding structure
US8148733B2 (en) 2007-06-12 2012-04-03 SemiLEDs Optoelectronics Co., Ltd. Vertical LED with current guiding structure
WO2009000106A1 (fr) * 2007-06-25 2008-12-31 Jenshyan Chen Dispositif électroluminescent
TWI449205B (zh) * 2007-10-25 2014-08-11 Epileds Technologies Inc Light emitting diode structure
CN100530726C (zh) * 2007-11-30 2009-08-19 华南师范大学 Ⅲ-ⅴ族金属氧化物半导体发光场效应晶体管及其制备方法
US8550684B2 (en) 2007-12-19 2013-10-08 Oree, Inc. Waveguide-based packaging structures and methods for discrete lighting elements
US7929816B2 (en) 2007-12-19 2011-04-19 Oree, Inc. Waveguide sheet containing in-coupling, propagation, and out-coupling regions
CN101499510B (zh) * 2008-01-30 2011-06-22 富士迈半导体精密工业（上海）有限公司 半导体发光元件
EP2240968A1 (en) 2008-02-08 2010-10-20 Illumitex, Inc. System and method for emitter layer shaping
US7737458B2 (en) * 2008-02-25 2010-06-15 Panasonic Corporation Light emitting device having a straight-line shape
EP2260341A2 (en) 2008-03-05 2010-12-15 Oree, Advanced Illumination Solutions INC. Illumination apparatus and methods of forming the same
US7781780B2 (en) 2008-03-31 2010-08-24 Bridgelux, Inc. Light emitting diodes with smooth surface for reflective electrode
US8431950B2 (en) * 2008-05-23 2013-04-30 Chia-Lun Tsai Light emitting device package structure and fabricating method thereof
US8301002B2 (en) 2008-07-10 2012-10-30 Oree, Inc. Slim waveguide coupling apparatus and method
US8297786B2 (en) 2008-07-10 2012-10-30 Oree, Inc. Slim waveguide coupling apparatus and method
JP5191866B2 (ja) * 2008-11-12 2013-05-08 スタンレー電気株式会社 半導体発光素子の製造方法及び半導体発光素子
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
JP5497301B2 (ja) * 2009-01-29 2014-05-21 スタンレー電気株式会社 半導体発光素子及びその製造方法
TWI399869B (zh) * 2009-02-05 2013-06-21 Huga Optotech Inc 發光二極體
JP2010225771A (ja) 2009-03-23 2010-10-07 Toyoda Gosei Co Ltd 半導体発光素子
US8624527B1 (en) 2009-03-27 2014-01-07 Oree, Inc. Independently controllable illumination device
TWI470824B (zh) * 2009-04-09 2015-01-21 Huga Optotech Inc 電極結構及其發光元件
US7952106B2 (en) * 2009-04-10 2011-05-31 Everlight Electronics Co., Ltd. Light emitting diode device having uniform current distribution and method for forming the same
US8328406B2 (en) 2009-05-13 2012-12-11 Oree, Inc. Low-profile illumination device
TW201101538A (en) * 2009-06-19 2011-01-01 Ubilux Optoelectronics Corp Light emitting diode
US8727597B2 (en) 2009-06-24 2014-05-20 Oree, Inc. Illumination apparatus with high conversion efficiency and methods of forming the same
CN102473748B (zh) 2009-07-01 2014-08-20 三菱电机株式会社 薄膜太阳能电池及其制造方法
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
CN102244188A (zh) * 2010-05-13 2011-11-16 展晶科技(深圳)有限公司 发光二极管芯片的电极结构
KR20130136906A (ko) * 2010-06-18 2013-12-13 글로 에이비 나노와이어 ｌｅｄ 구조와 이를 제조하기 위한 방법
JP5714250B2 (ja) * 2010-07-14 2015-05-07 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
JPWO2012014675A1 (ja) * 2010-07-29 2013-09-12 日本碍子株式会社 半導体素子、ｈｅｍｔ素子、および半導体素子の製造方法
US8696159B2 (en) 2010-09-20 2014-04-15 Cree, Inc. Multi-chip LED devices
US20120188738A1 (en) * 2011-01-25 2012-07-26 Conexant Systems, Inc. Integrated led in system-in-package module
JP5992174B2 (ja) * 2011-03-31 2016-09-14 シャープ株式会社 窒化物半導体発光素子およびその製造方法
JP5066274B1 (ja) 2011-05-16 2012-11-07 株式会社東芝 半導体発光素子
WO2013001781A1 (ja) * 2011-06-27 2013-01-03 パナソニック株式会社 窒化物系半導体発光素子
JPWO2013051326A1 (ja) * 2011-10-05 2015-03-30 シャープ株式会社 窒化物半導体発光素子、及び窒化物半導体発光素子の製造方法
US8591072B2 (en) 2011-11-16 2013-11-26 Oree, Inc. Illumination apparatus confining light by total internal reflection and methods of forming the same
JP2013140942A (ja) * 2011-12-07 2013-07-18 Toshiba Corp 半導体発光装置
EP2812738B1 (en) 2012-02-09 2016-10-12 Dow Corning Corporation Gradient polymer structures and methods
JP2012191232A (ja) * 2012-06-05 2012-10-04 Mitsubishi Chemicals Corp ＧａＮ系発光ダイオード素子
US9857519B2 (en) 2012-07-03 2018-01-02 Oree Advanced Illumination Solutions Ltd. Planar remote phosphor illumination apparatus
KR20140039740A (ko) 2012-09-25 2014-04-02 엘지이노텍 주식회사 발광소자 패키지
US20150372192A1 (en) * 2013-03-13 2015-12-24 Koninklijke Philips N.V. Method and apparatus for creating a porus reflective contact
CN103258945A (zh) * 2013-04-19 2013-08-21 安徽三安光电有限公司 一种发光二极管及其制作方法
US9666779B2 (en) * 2013-11-25 2017-05-30 Yangzhou Zhongke Semiconductor Lighting Co., Ltd. Semiconductor light emitting diode chip with current extension layer and graphical current extension layers
JP6428249B2 (ja) * 2013-12-25 2018-11-28 日亜化学工業株式会社 発光装置
JP6539023B2 (ja) * 2014-07-18 2019-07-03 株式会社堀場製作所 粒子分析装置
JP6623577B2 (ja) * 2015-06-30 2019-12-25 日亜化学工業株式会社 発光装置の製造方法
EP3422426A1 (en) * 2017-06-27 2019-01-02 Lumileds Holding B.V. Led device and a method of manufacturing the led device
JP7284366B2 (ja) * 2017-08-29 2023-05-31 日亜化学工業株式会社 発光装置
KR102432226B1 (ko) * 2017-12-01 2022-08-12 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자
CN111129259A (zh) * 2018-10-31 2020-05-08 日亚化学工业株式会社 发光装置、发光模块、发光装置以及发光模块的制造方法
CN111564536B (zh) * 2020-05-12 2021-11-05 创维液晶器件(深圳)有限公司 Micro-LED芯片的制备方法、结构及显示终端

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06188455A (ja) * 1992-12-18 1994-07-08 Daido Steel Co Ltd 半導体光電素子に対するｉｔｏ膜形成方法
JP3223832B2 (ja) * 1997-02-24 2001-10-29 日亜化学工業株式会社 窒化物半導体素子及び半導体レーザダイオード
JP4149054B2 (ja) * 1998-11-27 2008-09-10 シャープ株式会社 半導体装置
JP3469484B2 (ja) * 1998-12-24 2003-11-25 株式会社東芝 半導体発光素子およびその製造方法
TW439304B (en) 2000-01-05 2001-06-07 Ind Tech Res Inst GaN series III-V compound semiconductor devices
JP3394488B2 (ja) * 2000-01-24 2003-04-07 星和電機株式会社 窒化ガリウム系半導体発光素子及びその製造方法
TW579608B (en) * 2000-11-24 2004-03-11 High Link Technology Corp Method and structure of forming electrode for light emitting device
JP3814151B2 (ja) 2001-01-31 2006-08-23 信越半導体株式会社 発光素子
JP2003101071A (ja) * 2001-09-25 2003-04-04 Hitachi Cable Ltd 半導体発光素子
JP3782357B2 (ja) * 2002-01-18 2006-06-07 株式会社東芝 半導体発光素子の製造方法
JP4178836B2 (ja) 2002-05-29 2008-11-12 ソニー株式会社 窒化ガリウム系半導体素子及びその製造方法
JP3683560B2 (ja) * 2002-09-17 2005-08-17 星和電機株式会社 窒化ガリウム系半導体発光素子及びその製造方法
JP4620340B2 (ja) * 2002-10-23 2011-01-26 信越半導体株式会社 発光素子及びその製造方法
US6995401B2 (en) * 2002-10-23 2006-02-07 Shin-Etsu Handotai Co., Ltd. Light emitting device and method of fabricating the same
US20050082562A1 (en) * 2003-10-15 2005-04-21 Epistar Corporation High efficiency nitride based light emitting device

Also Published As

Publication number Publication date
US7288797B2 (en) 2007-10-30
US20050156189A1 (en) 2005-07-21
JPWO2005069388A1 (ja) 2007-12-27
TW200531313A (en) 2005-09-16
EP1708284A1 (en) 2006-10-04
JP4765632B2 (ja) 2011-09-07
WO2005069388A1 (ja) 2005-07-28
EP1708284A4 (en) 2012-10-03
EP1708284B1 (en) 2017-03-29

Similar Documents

Publication Publication Date Title
TWI369000B (en) Semiconductor light emiting element and method for making the same
EP1776846A4 (en) ELECTROLUMINESCENT DEVICE AND METHOD FOR MANUFACTURING THE SAME
TWI369915B (en) Light emitting element and manufacturing method thereof, and light emitting device using the light emitting element
EP1796180A4 (en) LUMINESCENT ELEMENT AND METHOD FOR MANUFACTURING THE SAME
EP1897151A4 (en) ILLUMINATING ELEMENT AND METHOD FOR THE PRODUCTION THEREOF
EP1959503A4 (en) SEMICONDUCTOR ELECTROLUMINESCENT ELEMENT AND METHOD FOR MANUFACTURING THE SAME
TWI346995B (en) Semiconductor device and method for producing the same
EP1968124A4 (en) SEMICONDUCTOR LIGHT ELEMENT AND PROCESS FOR ITS MANUFACTURE
GB0718102D0 (en) Semiconductor luminous element and method for manufacture thereof
GB2429848B (en) Electronics module and method for manufacturing the same
EP1753035A4 (en) LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
EP1803158A4 (en) Method and structure for improved LED light output
EP2109157A4 (en) LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
EP1858086A4 (en) OPTICAL EQUIPMENT AND MANUFACTURING METHOD FOR OPTICAL SETUP
EP1799154A4 (en) VASCULAR STENT AND METHOD OF MANUFACTURING THE STENT THERAPY
EP1881535A4 (en) NITRIDE-BASED SEMICONDUCTOR ELEMENT AND METHOD FOR THE PRODUCTION THEREOF
SG119329A1 (en) Semiconductor device and method for manufacturing the same
EP1780806A4 (en) LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD THEREFOR
HK1068379A1 (en) Polytetrafluoroethylene fiber and method for manufacturing the same
EP1717843A4 (en) FOTOVERVIELFACHER AND MANUFACTURING PROCESS THEREFOR
EP2096684A4 (en) LIGHT-EMITTING COMPOUND SEMICONDUCTOR COMPONENT AND METHOD OF MANUFACTURING A LIGHT-EMITTING COMPOSITE SEMICONDUCTOR COMPONENT
PL1798781T3 (pl) Dioda LED posiadająca pionową strukturę i sposób jej wytwarzania
SG120978A1 (en) Metal-over-metal devices and the method for manufacturing same
EP1970968A4 (en) LUMINAIRE ARRANGEMENT, SEMICONDUCTOR ARRANGEMENT AND MANUFACTURING METHOD THEREFOR
EP1947705A4 (en) LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME