TWI369000B - Semiconductor light emiting element and method for making the same - Google Patents
Semiconductor light emiting element and method for making the sameInfo
- Publication number
- TWI369000B TWI369000B TW094101640A TW94101640A TWI369000B TW I369000 B TWI369000 B TW I369000B TW 094101640 A TW094101640 A TW 094101640A TW 94101640 A TW94101640 A TW 94101640A TW I369000 B TWI369000 B TW I369000B
- Authority
- TW
- Taiwan
- Prior art keywords
- making
- same
- semiconductor light
- light emiting
- emiting element
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004012370 | 2004-01-20 | ||
JP2004100622 | 2004-03-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200531313A TW200531313A (en) | 2005-09-16 |
TWI369000B true TWI369000B (en) | 2012-07-21 |
Family
ID=34752130
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094101640A TWI369000B (en) | 2004-01-20 | 2005-01-20 | Semiconductor light emiting element and method for making the same |
Country Status (5)
Country | Link |
---|---|
US (1) | US7288797B2 (zh) |
EP (1) | EP1708284B1 (zh) |
JP (1) | JP4765632B2 (zh) |
TW (1) | TWI369000B (zh) |
WO (1) | WO2005069388A1 (zh) |
Families Citing this family (90)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20050034936A (ko) * | 2003-10-10 | 2005-04-15 | 삼성전기주식회사 | 형광체를 이용한 파장변환형 발광 다이오드 패키지 및제조방법 |
JP4386185B2 (ja) * | 2004-07-28 | 2009-12-16 | サンケン電気株式会社 | 窒化物半導体装置 |
TWI246210B (en) * | 2005-04-28 | 2005-12-21 | Epitech Corp Ltd | Lateral current blocking light emitting diode and method for manufacturing the same |
JP2006344925A (ja) * | 2005-05-11 | 2006-12-21 | Sharp Corp | 発光素子搭載用フレームおよび発光装置 |
DE112006001414A5 (de) | 2005-05-30 | 2008-03-06 | Osram Opto Semiconductors Gmbh | Gehäusekörper und Verfahren zu dessen Herstellung |
US8215815B2 (en) | 2005-06-07 | 2012-07-10 | Oree, Inc. | Illumination apparatus and methods of forming the same |
US8128272B2 (en) | 2005-06-07 | 2012-03-06 | Oree, Inc. | Illumination apparatus |
US8272758B2 (en) | 2005-06-07 | 2012-09-25 | Oree, Inc. | Illumination apparatus and methods of forming the same |
JP4945106B2 (ja) * | 2005-09-08 | 2012-06-06 | スタンレー電気株式会社 | 半導体発光装置 |
US7939845B2 (en) * | 2005-09-20 | 2011-05-10 | Showa Denko K.K. | Nitride semiconductor light-emitting device and production method thereof |
JP4476912B2 (ja) * | 2005-09-29 | 2010-06-09 | 株式会社東芝 | 半導体発光素子およびその製造方法 |
KR100661614B1 (ko) * | 2005-10-07 | 2006-12-26 | 삼성전기주식회사 | 질화물계 반도체 발광소자 및 그 제조방법 |
US7910946B2 (en) * | 2005-12-12 | 2011-03-22 | Nichia Corporation | Light emitting apparatus and semiconductor apparatus, and method for manufacturing the same |
JP4417906B2 (ja) * | 2005-12-16 | 2010-02-17 | 株式会社東芝 | 発光装置及びその製造方法 |
JP4922611B2 (ja) * | 2005-12-26 | 2012-04-25 | 学校法人東京理科大学 | 酸化亜鉛光デバイス、酸化亜鉛光デバイスの製造方法、および酸化亜鉛光デバイスの利用方法 |
US7772604B2 (en) | 2006-01-05 | 2010-08-10 | Illumitex | Separate optical device for directing light from an LED |
JP2007194385A (ja) * | 2006-01-19 | 2007-08-02 | Stanley Electric Co Ltd | 半導体発光装置及び半導体発光装置の製造方法 |
US8044412B2 (en) | 2006-01-20 | 2011-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd | Package for a light emitting element |
JP4933130B2 (ja) * | 2006-02-16 | 2012-05-16 | 昭和電工株式会社 | GaN系半導体発光素子およびその製造方法 |
JP5047516B2 (ja) * | 2006-03-23 | 2012-10-10 | 昭和電工株式会社 | 窒化ガリウム系化合物半導体発光素子の製造方法、窒化ガリウム系化合物半導体発光素子及びそれを用いたランプ |
TWI303115B (en) * | 2006-04-13 | 2008-11-11 | Epistar Corp | Semiconductor light emitting device |
KR100731677B1 (ko) * | 2006-04-21 | 2007-06-22 | 서울반도체 주식회사 | 표면처리된 수지 봉지재를 갖는 발광 다이오드 패키지제조방법 및 그것에 의해 제조된 패키지 |
US20070295951A1 (en) * | 2006-06-26 | 2007-12-27 | Jen-Inn Chyi | Light-emitting diode incorporating an array of light extracting spots |
JP2008060542A (ja) * | 2006-08-03 | 2008-03-13 | Toyoda Gosei Co Ltd | 発光装置、発光装置の製造方法、及びこれを備えた光源装置 |
JP2008060286A (ja) * | 2006-08-31 | 2008-03-13 | Toyoda Gosei Co Ltd | 半導体発光素子及びその製造方法 |
EP2070123A2 (en) | 2006-10-02 | 2009-06-17 | Illumitex, Inc. | Led system and method |
JP4948134B2 (ja) * | 2006-11-22 | 2012-06-06 | シャープ株式会社 | 窒化物半導体発光素子 |
US7663148B2 (en) * | 2006-12-22 | 2010-02-16 | Philips Lumileds Lighting Company, Llc | III-nitride light emitting device with reduced strain light emitting layer |
JP5092419B2 (ja) * | 2007-01-24 | 2012-12-05 | 三菱化学株式会社 | GaN系発光ダイオード素子 |
TWI396297B (zh) * | 2007-01-24 | 2013-05-11 | Tera Xtal Technology Corp | 發光二極體結構及其製造方法 |
CN102779918B (zh) | 2007-02-01 | 2015-09-02 | 日亚化学工业株式会社 | 半导体发光元件 |
JP2008294188A (ja) * | 2007-05-24 | 2008-12-04 | Toyoda Gosei Co Ltd | 半導体発光素子及びその製造方法 |
CN101320771A (zh) * | 2007-06-04 | 2008-12-10 | 富士迈半导体精密工业(上海)有限公司 | 半导体发光元件 |
US7759670B2 (en) * | 2007-06-12 | 2010-07-20 | SemiLEDs Optoelectronics Co., Ltd. | Vertical LED with current guiding structure |
US8546818B2 (en) | 2007-06-12 | 2013-10-01 | SemiLEDs Optoelectronics Co., Ltd. | Vertical LED with current-guiding structure |
US8148733B2 (en) | 2007-06-12 | 2012-04-03 | SemiLEDs Optoelectronics Co., Ltd. | Vertical LED with current guiding structure |
US20100181590A1 (en) * | 2007-06-25 | 2010-07-22 | Jen-Shyan Chen | Light-emitting diode illuminating apparatus |
TWI449205B (zh) * | 2007-10-25 | 2014-08-11 | Epileds Technologies Inc | Light emitting diode structure |
CN100530726C (zh) * | 2007-11-30 | 2009-08-19 | 华南师范大学 | Ⅲ-ⅴ族金属氧化物半导体发光场效应晶体管及其制备方法 |
US20090161369A1 (en) | 2007-12-19 | 2009-06-25 | Keren Regev | Waveguide sheet and methods for manufacturing the same |
US7907804B2 (en) | 2007-12-19 | 2011-03-15 | Oree, Inc. | Elimination of stitch artifacts in a planar illumination area |
CN101499510B (zh) * | 2008-01-30 | 2011-06-22 | 富士迈半导体精密工业(上海)有限公司 | 半导体发光元件 |
US7829358B2 (en) | 2008-02-08 | 2010-11-09 | Illumitex, Inc. | System and method for emitter layer shaping |
US7737458B2 (en) * | 2008-02-25 | 2010-06-15 | Panasonic Corporation | Light emitting device having a straight-line shape |
EP2260341A2 (en) | 2008-03-05 | 2010-12-15 | Oree, Advanced Illumination Solutions INC. | Illumination apparatus and methods of forming the same |
US7781780B2 (en) | 2008-03-31 | 2010-08-24 | Bridgelux, Inc. | Light emitting diodes with smooth surface for reflective electrode |
US8431950B2 (en) * | 2008-05-23 | 2013-04-30 | Chia-Lun Tsai | Light emitting device package structure and fabricating method thereof |
US8297786B2 (en) | 2008-07-10 | 2012-10-30 | Oree, Inc. | Slim waveguide coupling apparatus and method |
US8301002B2 (en) | 2008-07-10 | 2012-10-30 | Oree, Inc. | Slim waveguide coupling apparatus and method |
JP5191866B2 (ja) * | 2008-11-12 | 2013-05-08 | スタンレー電気株式会社 | 半導体発光素子の製造方法及び半導体発光素子 |
TW201034256A (en) | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
JP5497301B2 (ja) * | 2009-01-29 | 2014-05-21 | スタンレー電気株式会社 | 半導体発光素子及びその製造方法 |
TWI399869B (zh) * | 2009-02-05 | 2013-06-21 | Huga Optotech Inc | 發光二極體 |
JP2010225771A (ja) * | 2009-03-23 | 2010-10-07 | Toyoda Gosei Co Ltd | 半導体発光素子 |
US8624527B1 (en) | 2009-03-27 | 2014-01-07 | Oree, Inc. | Independently controllable illumination device |
TWI470824B (zh) * | 2009-04-09 | 2015-01-21 | Huga Optotech Inc | 電極結構及其發光元件 |
US7952106B2 (en) * | 2009-04-10 | 2011-05-31 | Everlight Electronics Co., Ltd. | Light emitting diode device having uniform current distribution and method for forming the same |
US20100320904A1 (en) | 2009-05-13 | 2010-12-23 | Oree Inc. | LED-Based Replacement Lamps for Incandescent Fixtures |
TW201101538A (en) * | 2009-06-19 | 2011-01-01 | Ubilux Optoelectronics Corp | Light emitting diode |
US8727597B2 (en) | 2009-06-24 | 2014-05-20 | Oree, Inc. | Illumination apparatus with high conversion efficiency and methods of forming the same |
JP5174966B2 (ja) | 2009-07-01 | 2013-04-03 | 三菱電機株式会社 | 薄膜太陽電池およびその製造方法 |
US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
US8449128B2 (en) | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
CN102244188A (zh) * | 2010-05-13 | 2011-11-16 | 展晶科技(深圳)有限公司 | 发光二极管芯片的电极结构 |
AU2011268135B2 (en) * | 2010-06-18 | 2014-06-12 | Glo Ab | Nanowire LED structure and method for manufacturing the same |
JP5714250B2 (ja) * | 2010-07-14 | 2015-05-07 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
WO2012014675A1 (ja) * | 2010-07-29 | 2012-02-02 | 日本碍子株式会社 | 半導体素子、hemt素子、および半導体素子の製造方法 |
US8696159B2 (en) | 2010-09-20 | 2014-04-15 | Cree, Inc. | Multi-chip LED devices |
US20120188738A1 (en) * | 2011-01-25 | 2012-07-26 | Conexant Systems, Inc. | Integrated led in system-in-package module |
JP5992174B2 (ja) * | 2011-03-31 | 2016-09-14 | シャープ株式会社 | 窒化物半導体発光素子およびその製造方法 |
JP5066274B1 (ja) * | 2011-05-16 | 2012-11-07 | 株式会社東芝 | 半導体発光素子 |
WO2013001781A1 (ja) * | 2011-06-27 | 2013-01-03 | パナソニック株式会社 | 窒化物系半導体発光素子 |
WO2013051326A1 (ja) * | 2011-10-05 | 2013-04-11 | シャープ株式会社 | 窒化物半導体発光素子、及び窒化物半導体発光素子の製造方法 |
US8591072B2 (en) | 2011-11-16 | 2013-11-26 | Oree, Inc. | Illumination apparatus confining light by total internal reflection and methods of forming the same |
JP2013140942A (ja) | 2011-12-07 | 2013-07-18 | Toshiba Corp | 半導体発光装置 |
WO2013119796A1 (en) * | 2012-02-09 | 2013-08-15 | Dow Corning Corporation | Gradient polymer structures and methods |
JP2012191232A (ja) * | 2012-06-05 | 2012-10-04 | Mitsubishi Chemicals Corp | GaN系発光ダイオード素子 |
US9857519B2 (en) | 2012-07-03 | 2018-01-02 | Oree Advanced Illumination Solutions Ltd. | Planar remote phosphor illumination apparatus |
KR20140039740A (ko) | 2012-09-25 | 2014-04-02 | 엘지이노텍 주식회사 | 발광소자 패키지 |
EP2973755B1 (en) * | 2013-03-13 | 2018-12-05 | Lumileds Holding B.V. | Semiconductor structure comprising a porous reflective contact |
CN103258945A (zh) * | 2013-04-19 | 2013-08-21 | 安徽三安光电有限公司 | 一种发光二极管及其制作方法 |
WO2015074353A1 (zh) * | 2013-11-25 | 2015-05-28 | 扬州中科半导体照明有限公司 | 一种半导体发光二极管芯片 |
JP6428249B2 (ja) * | 2013-12-25 | 2018-11-28 | 日亜化学工業株式会社 | 発光装置 |
JP6539023B2 (ja) * | 2014-07-18 | 2019-07-03 | 株式会社堀場製作所 | 粒子分析装置 |
JP6623577B2 (ja) * | 2015-06-30 | 2019-12-25 | 日亜化学工業株式会社 | 発光装置の製造方法 |
EP3422426A1 (en) * | 2017-06-27 | 2019-01-02 | Lumileds Holding B.V. | Led device and a method of manufacturing the led device |
JP7284366B2 (ja) * | 2017-08-29 | 2023-05-31 | 日亜化学工業株式会社 | 発光装置 |
KR102432226B1 (ko) * | 2017-12-01 | 2022-08-12 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 |
CN111129259B (zh) * | 2018-10-31 | 2024-06-07 | 日亚化学工业株式会社 | 发光装置、发光模块、发光装置以及发光模块的制造方法 |
CN111564536B (zh) * | 2020-05-12 | 2021-11-05 | 创维液晶器件(深圳)有限公司 | Micro-LED芯片的制备方法、结构及显示终端 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06188455A (ja) | 1992-12-18 | 1994-07-08 | Daido Steel Co Ltd | 半導体光電素子に対するito膜形成方法 |
JP3223832B2 (ja) * | 1997-02-24 | 2001-10-29 | 日亜化学工業株式会社 | 窒化物半導体素子及び半導体レーザダイオード |
JP4149054B2 (ja) * | 1998-11-27 | 2008-09-10 | シャープ株式会社 | 半導体装置 |
JP3469484B2 (ja) * | 1998-12-24 | 2003-11-25 | 株式会社東芝 | 半導体発光素子およびその製造方法 |
TW439304B (en) * | 2000-01-05 | 2001-06-07 | Ind Tech Res Inst | GaN series III-V compound semiconductor devices |
JP3394488B2 (ja) * | 2000-01-24 | 2003-04-07 | 星和電機株式会社 | 窒化ガリウム系半導体発光素子及びその製造方法 |
TW579608B (en) * | 2000-11-24 | 2004-03-11 | High Link Technology Corp | Method and structure of forming electrode for light emitting device |
JP3814151B2 (ja) * | 2001-01-31 | 2006-08-23 | 信越半導体株式会社 | 発光素子 |
JP2003101071A (ja) * | 2001-09-25 | 2003-04-04 | Hitachi Cable Ltd | 半導体発光素子 |
JP3782357B2 (ja) * | 2002-01-18 | 2006-06-07 | 株式会社東芝 | 半導体発光素子の製造方法 |
JP4178836B2 (ja) * | 2002-05-29 | 2008-11-12 | ソニー株式会社 | 窒化ガリウム系半導体素子及びその製造方法 |
JP3683560B2 (ja) | 2002-09-17 | 2005-08-17 | 星和電機株式会社 | 窒化ガリウム系半導体発光素子及びその製造方法 |
JP4620340B2 (ja) | 2002-10-23 | 2011-01-26 | 信越半導体株式会社 | 発光素子及びその製造方法 |
US6995401B2 (en) * | 2002-10-23 | 2006-02-07 | Shin-Etsu Handotai Co., Ltd. | Light emitting device and method of fabricating the same |
US20050082562A1 (en) * | 2003-10-15 | 2005-04-21 | Epistar Corporation | High efficiency nitride based light emitting device |
-
2005
- 2005-01-19 EP EP05703815.0A patent/EP1708284B1/en not_active Ceased
- 2005-01-19 JP JP2005517107A patent/JP4765632B2/ja active Active
- 2005-01-19 WO PCT/JP2005/000578 patent/WO2005069388A1/ja active Application Filing
- 2005-01-19 US US10/905,759 patent/US7288797B2/en active Active
- 2005-01-20 TW TW094101640A patent/TWI369000B/zh active
Also Published As
Publication number | Publication date |
---|---|
TW200531313A (en) | 2005-09-16 |
US7288797B2 (en) | 2007-10-30 |
JP4765632B2 (ja) | 2011-09-07 |
EP1708284A1 (en) | 2006-10-04 |
JPWO2005069388A1 (ja) | 2007-12-27 |
EP1708284B1 (en) | 2017-03-29 |
WO2005069388A1 (ja) | 2005-07-28 |
US20050156189A1 (en) | 2005-07-21 |
EP1708284A4 (en) | 2012-10-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI369000B (en) | Semiconductor light emiting element and method for making the same | |
EP1776846A4 (en) | ELECTROLUMINESCENT DEVICE AND METHOD FOR MANUFACTURING THE SAME | |
TWI369915B (en) | Light emitting element and manufacturing method thereof, and light emitting device using the light emitting element | |
EP1796180A4 (en) | LUMINESCENT ELEMENT AND METHOD FOR MANUFACTURING THE SAME | |
EP1897151A4 (en) | ILLUMINATING ELEMENT AND METHOD FOR THE PRODUCTION THEREOF | |
EP1959503A4 (en) | SEMICONDUCTOR ELECTROLUMINESCENT ELEMENT AND METHOD FOR MANUFACTURING THE SAME | |
TWI346995B (en) | Semiconductor device and method for producing the same | |
EP1968124A4 (en) | SEMICONDUCTOR LIGHT ELEMENT AND PROCESS FOR ITS MANUFACTURE | |
GB0718102D0 (en) | Semiconductor luminous element and method for manufacture thereof | |
GB2429848B (en) | Electronics module and method for manufacturing the same | |
EP1803158A4 (en) | Method and structure for improved LED light output | |
EP1753035A4 (en) | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME | |
EP2109157A4 (en) | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME | |
EP1858086A4 (en) | OPTICAL EQUIPMENT AND MANUFACTURING METHOD FOR OPTICAL SETUP | |
TWI316293B (en) | Semiconductor device and method for manufacturing the same | |
EP1799153A4 (en) | STENT AND METHOD FOR PRODUCING THE STENT | |
EP1881535A4 (en) | NITRIDE-BASED SEMICONDUCTOR ELEMENT AND METHOD FOR THE PRODUCTION THEREOF | |
SG119329A1 (en) | Semiconductor device and method for manufacturing the same | |
EP1780806A4 (en) | LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD THEREFOR | |
HK1068379A1 (en) | Polytetrafluoroethylene fiber and method for manufacturing the same | |
EP1717843A4 (en) | FOTOVERVIELFACHER AND MANUFACTURING PROCESS THEREFOR | |
EP2096684A4 (en) | LIGHT-EMITTING COMPOUND SEMICONDUCTOR COMPONENT AND METHOD OF MANUFACTURING A LIGHT-EMITTING COMPOSITE SEMICONDUCTOR COMPONENT | |
PL1798781T3 (pl) | Dioda LED posiadająca pionową strukturę i sposób jej wytwarzania | |
SG120978A1 (en) | Metal-over-metal devices and the method for manufacturing same | |
EP1970968A4 (en) | LUMINAIRE ARRANGEMENT, SEMICONDUCTOR ARRANGEMENT AND MANUFACTURING METHOD THEREFOR |