TWI368996B - Method for manufacturing thin film transistor - Google Patents
Method for manufacturing thin film transistorInfo
- Publication number
- TWI368996B TWI368996B TW096141623A TW96141623A TWI368996B TW I368996 B TWI368996 B TW I368996B TW 096141623 A TW096141623 A TW 096141623A TW 96141623 A TW96141623 A TW 96141623A TW I368996 B TWI368996 B TW I368996B
- Authority
- TW
- Taiwan
- Prior art keywords
- thin film
- film transistor
- manufacturing thin
- manufacturing
- transistor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006314243A JP5116290B2 (ja) | 2006-11-21 | 2006-11-21 | 薄膜トランジスタの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200837959A TW200837959A (en) | 2008-09-16 |
TWI368996B true TWI368996B (en) | 2012-07-21 |
Family
ID=38894020
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096141623A TWI368996B (en) | 2006-11-21 | 2007-11-05 | Method for manufacturing thin film transistor |
Country Status (7)
Country | Link |
---|---|
US (1) | US8084307B2 (zh) |
EP (1) | EP2084749A1 (zh) |
JP (1) | JP5116290B2 (zh) |
KR (1) | KR101052421B1 (zh) |
CN (1) | CN101548388B (zh) |
TW (1) | TWI368996B (zh) |
WO (1) | WO2008062720A1 (zh) |
Families Citing this family (70)
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US7371605B2 (en) * | 2005-03-25 | 2008-05-13 | Lucent Technologies Inc. | Active organic semiconductor devices and methods for making the same |
TWI475667B (zh) | 2005-03-28 | 2015-03-01 | Semiconductor Energy Lab | 記憶裝置和其製造方法 |
CN101663762B (zh) * | 2007-04-25 | 2011-09-21 | 佳能株式会社 | 氧氮化物半导体 |
JP5393058B2 (ja) * | 2007-09-05 | 2014-01-22 | キヤノン株式会社 | 電界効果型トランジスタ |
JP5213429B2 (ja) * | 2007-12-13 | 2013-06-19 | キヤノン株式会社 | 電界効果型トランジスタ |
JP5213458B2 (ja) | 2008-01-08 | 2013-06-19 | キヤノン株式会社 | アモルファス酸化物及び電界効果型トランジスタ |
JP5219529B2 (ja) * | 2008-01-23 | 2013-06-26 | キヤノン株式会社 | 電界効果型トランジスタ及び、該電界効果型トランジスタを備えた表示装置 |
JP2009206508A (ja) * | 2008-01-31 | 2009-09-10 | Canon Inc | 薄膜トランジスタ及び表示装置 |
JP5305730B2 (ja) * | 2008-05-12 | 2013-10-02 | キヤノン株式会社 | 半導体素子の製造方法ならびにその製造装置 |
TWI570937B (zh) * | 2008-07-31 | 2017-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
JP2010056541A (ja) * | 2008-07-31 | 2010-03-11 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP5480554B2 (ja) | 2008-08-08 | 2014-04-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP5608347B2 (ja) * | 2008-08-08 | 2014-10-15 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の作製方法 |
JP5627071B2 (ja) | 2008-09-01 | 2014-11-19 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US9269573B2 (en) * | 2008-09-17 | 2016-02-23 | Idemitsu Kosan Co., Ltd. | Thin film transistor having crystalline indium oxide semiconductor film |
JP5361651B2 (ja) * | 2008-10-22 | 2013-12-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
WO2010047063A1 (ja) * | 2008-10-23 | 2010-04-29 | 出光興産株式会社 | 高純度結晶質酸化インジウム半導体膜を有する薄膜トランジスタ、及びその製造方法 |
WO2010047077A1 (ja) | 2008-10-23 | 2010-04-29 | 出光興産株式会社 | 薄膜トランジスタ及びその製造方法 |
TWI467663B (zh) * | 2008-11-07 | 2015-01-01 | Semiconductor Energy Lab | 半導體裝置和該半導體裝置的製造方法 |
EP2380202B1 (en) * | 2008-12-24 | 2016-02-17 | 3M Innovative Properties Company | Stability enhancements in metal oxide semiconductor thin film transistors |
JP2010165922A (ja) * | 2009-01-16 | 2010-07-29 | Idemitsu Kosan Co Ltd | 電界効果型トランジスタ、電界効果型トランジスタの製造方法及び半導体素子の製造方法 |
JP5606682B2 (ja) * | 2009-01-29 | 2014-10-15 | 富士フイルム株式会社 | 薄膜トランジスタ、多結晶酸化物半導体薄膜の製造方法、及び薄膜トランジスタの製造方法 |
DE102009009337A1 (de) * | 2009-02-17 | 2010-08-19 | Evonik Degussa Gmbh | Verfahren zur Herstellung halbleitender Indiumoxid-Schichten, nach dem Verfahren hergestellte Indiumoxid-Schichten und deren Verwendung |
US8247276B2 (en) * | 2009-02-20 | 2012-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor, method for manufacturing the same, and semiconductor device |
KR102391280B1 (ko) | 2009-03-12 | 2022-04-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
TWI489628B (zh) * | 2009-04-02 | 2015-06-21 | Semiconductor Energy Lab | 半導體裝置和其製造方法 |
JP5564331B2 (ja) | 2009-05-29 | 2014-07-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP5507133B2 (ja) * | 2009-07-03 | 2014-05-28 | 富士フイルム株式会社 | ボトムゲート構造の薄膜トランジスタの製造方法 |
KR20170119742A (ko) * | 2009-07-03 | 2017-10-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
KR101460869B1 (ko) * | 2009-09-04 | 2014-11-11 | 가부시끼가이샤 도시바 | 박막 트랜지스터 및 그 제조 방법 |
CN105428424A (zh) * | 2009-09-16 | 2016-03-23 | 株式会社半导体能源研究所 | 晶体管及显示设备 |
CN105609565B (zh) * | 2009-09-16 | 2019-02-22 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
WO2011033915A1 (en) * | 2009-09-16 | 2011-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR20220122778A (ko) * | 2009-09-24 | 2022-09-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 |
KR102054650B1 (ko) | 2009-09-24 | 2019-12-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막 및 반도체 장치 |
WO2011043182A1 (en) * | 2009-10-05 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Method for removing electricity and method for manufacturing semiconductor device |
CN104992980B (zh) | 2009-10-16 | 2018-11-20 | 株式会社半导体能源研究所 | 逻辑电路和半导体器件 |
WO2011048923A1 (en) * | 2009-10-21 | 2011-04-28 | Semiconductor Energy Laboratory Co., Ltd. | E-book reader |
KR102148664B1 (ko) * | 2009-11-06 | 2020-08-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
KR102066532B1 (ko) | 2009-11-06 | 2020-01-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR101952065B1 (ko) | 2009-11-06 | 2019-02-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 동작 방법 |
CN102598279B (zh) * | 2009-11-06 | 2015-10-07 | 株式会社半导体能源研究所 | 半导体装置 |
KR101799265B1 (ko) * | 2009-11-13 | 2017-11-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
JP5657878B2 (ja) * | 2009-11-20 | 2015-01-21 | 株式会社半導体エネルギー研究所 | トランジスタの作製方法 |
KR101506304B1 (ko) | 2009-11-27 | 2015-03-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작방법 |
KR20120107107A (ko) | 2009-12-04 | 2012-09-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
WO2011077978A1 (en) | 2009-12-25 | 2011-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device |
KR101473684B1 (ko) * | 2009-12-25 | 2014-12-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
WO2011108346A1 (en) * | 2010-03-05 | 2011-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of oxide semiconductor film and manufacturing method of transistor |
KR20130008037A (ko) * | 2010-03-05 | 2013-01-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치를 제작하는 방법 |
KR20190018049A (ko) | 2010-03-08 | 2019-02-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치를 제작하는 방법 |
CN102822980B (zh) * | 2010-03-26 | 2015-12-16 | 株式会社半导体能源研究所 | 半导体装置的制造方法 |
CN104465408B (zh) | 2010-04-23 | 2017-09-15 | 株式会社半导体能源研究所 | 半导体装置及半导体装置的制造方法 |
US9496405B2 (en) | 2010-05-20 | 2016-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device including step of adding cation to oxide semiconductor layer |
US8642380B2 (en) | 2010-07-02 | 2014-02-04 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
US8728860B2 (en) | 2010-09-03 | 2014-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JP5189674B2 (ja) | 2010-12-28 | 2013-04-24 | 出光興産株式会社 | 酸化物半導体薄膜層を有する積層構造、積層構造の製造方法、薄膜トランジスタ及び表示装置 |
JP5743064B2 (ja) * | 2011-02-17 | 2015-07-01 | 株式会社Joled | 薄膜トランジスタおよびその製造方法、並びに表示装置 |
KR101843871B1 (ko) * | 2011-03-11 | 2018-04-02 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
US8679905B2 (en) * | 2011-06-08 | 2014-03-25 | Cbrite Inc. | Metal oxide TFT with improved source/drain contacts |
US9412623B2 (en) * | 2011-06-08 | 2016-08-09 | Cbrite Inc. | Metal oxide TFT with improved source/drain contacts and reliability |
JP6016532B2 (ja) * | 2011-09-07 | 2016-10-26 | 株式会社半導体エネルギー研究所 | 半導体装置 |
KR20140101817A (ko) | 2011-12-02 | 2014-08-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
KR20130111873A (ko) | 2012-04-02 | 2013-10-11 | 단국대학교 산학협력단 | 박막 트랜지스터 표시판 제조 방법 |
CN104321967B (zh) * | 2012-05-25 | 2018-01-09 | 株式会社半导体能源研究所 | 可编程逻辑装置及半导体装置 |
KR20130137851A (ko) | 2012-06-08 | 2013-12-18 | 삼성디스플레이 주식회사 | 산화물 반도체의 전구체 조성물, 산화물 반도체를 포함하는 박막 트랜지스터 기판, 그리고 산화물 반도체를 포함하는 박막 트랜지스터 기판의 제조 방법 |
CN103985639B (zh) * | 2014-04-28 | 2015-06-03 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制备方法、显示基板、显示装置 |
TWI611463B (zh) | 2016-06-29 | 2018-01-11 | 友達光電股份有限公司 | 金屬氧化物半導體層的結晶方法及半導體結構 |
KR102458660B1 (ko) | 2016-08-03 | 2022-10-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 전자 기기 |
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US7339187B2 (en) * | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
JP3797317B2 (ja) * | 2002-05-30 | 2006-07-19 | 住友金属鉱山株式会社 | 透明導電性薄膜用ターゲット、透明導電性薄膜およびその製造方法、ディスプレイ用電極材料、有機エレクトロルミネッセンス素子 |
TW200511589A (en) | 2003-07-25 | 2005-03-16 | Hewlett Packard Development Co | Transistor including a deposited channel region having a doped portion |
US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
US7211825B2 (en) * | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
JP4544518B2 (ja) | 2004-09-01 | 2010-09-15 | キヤノン株式会社 | 電界励起型発光素子及び画像表示装置 |
US7829444B2 (en) | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
US20060197092A1 (en) | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
JP5006598B2 (ja) | 2005-09-16 | 2012-08-22 | キヤノン株式会社 | 電界効果型トランジスタ |
JP5177954B2 (ja) | 2006-01-30 | 2013-04-10 | キヤノン株式会社 | 電界効果型トランジスタ |
JP5110803B2 (ja) | 2006-03-17 | 2012-12-26 | キヤノン株式会社 | 酸化物膜をチャネルに用いた電界効果型トランジスタ及びその製造方法 |
JP5294565B2 (ja) | 2006-03-17 | 2013-09-18 | キヤノン株式会社 | 発光素子及び発光素子の製造方法 |
JP4609797B2 (ja) * | 2006-08-09 | 2011-01-12 | Nec液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
JP4332545B2 (ja) | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
CN101663762B (zh) | 2007-04-25 | 2011-09-21 | 佳能株式会社 | 氧氮化物半导体 |
JP5451280B2 (ja) | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
-
2006
- 2006-11-21 JP JP2006314243A patent/JP5116290B2/ja not_active Expired - Fee Related
-
2007
- 2007-11-05 TW TW096141623A patent/TWI368996B/zh not_active IP Right Cessation
- 2007-11-09 KR KR1020097012785A patent/KR101052421B1/ko active IP Right Grant
- 2007-11-09 EP EP07831964A patent/EP2084749A1/en not_active Withdrawn
- 2007-11-09 US US12/447,199 patent/US8084307B2/en not_active Expired - Fee Related
- 2007-11-09 CN CN2007800431833A patent/CN101548388B/zh not_active Expired - Fee Related
- 2007-11-09 WO PCT/JP2007/072234 patent/WO2008062720A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
US20090269880A1 (en) | 2009-10-29 |
WO2008062720A1 (en) | 2008-05-29 |
KR101052421B1 (ko) | 2011-07-28 |
JP2008130814A (ja) | 2008-06-05 |
US8084307B2 (en) | 2011-12-27 |
CN101548388A (zh) | 2009-09-30 |
EP2084749A1 (en) | 2009-08-05 |
JP5116290B2 (ja) | 2013-01-09 |
TW200837959A (en) | 2008-09-16 |
CN101548388B (zh) | 2010-11-17 |
KR20090086602A (ko) | 2009-08-13 |
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