TWI366917B - Transistor having recess channel and fabrication method thereof - Google Patents
Transistor having recess channel and fabrication method thereofInfo
- Publication number
- TWI366917B TWI366917B TW096135787A TW96135787A TWI366917B TW I366917 B TWI366917 B TW I366917B TW 096135787 A TW096135787 A TW 096135787A TW 96135787 A TW96135787 A TW 96135787A TW I366917 B TWI366917 B TW I366917B
- Authority
- TW
- Taiwan
- Prior art keywords
- transistor
- fabrication method
- recess channel
- recess
- channel
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060133855A KR100824205B1 (ko) | 2006-12-26 | 2006-12-26 | Dmos 트랜지스터 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200828589A TW200828589A (en) | 2008-07-01 |
TWI366917B true TWI366917B (en) | 2012-06-21 |
Family
ID=39541591
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096135787A TWI366917B (en) | 2006-12-26 | 2007-09-26 | Transistor having recess channel and fabrication method thereof |
Country Status (5)
Country | Link |
---|---|
US (2) | US7767530B2 (ja) |
JP (1) | JP5519902B2 (ja) |
KR (1) | KR100824205B1 (ja) |
CN (1) | CN101211977B (ja) |
TW (1) | TWI366917B (ja) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5270553B2 (ja) * | 2007-08-23 | 2013-08-21 | 武田薬品工業株式会社 | 複素環化合物およびその用途 |
KR100970282B1 (ko) * | 2007-11-19 | 2010-07-15 | 매그나칩 반도체 유한회사 | 트렌치 mosfet 및 그 제조방법 |
KR100940643B1 (ko) * | 2007-12-24 | 2010-02-05 | 주식회사 동부하이텍 | 반도체 소자의 제조방법 |
JP5546740B2 (ja) * | 2008-05-23 | 2014-07-09 | ローム株式会社 | 半導体装置 |
US8105903B2 (en) * | 2009-09-21 | 2012-01-31 | Force Mos Technology Co., Ltd. | Method for making a trench MOSFET with shallow trench structures |
JP5483693B2 (ja) * | 2009-12-17 | 2014-05-07 | ルネサスエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
CN102184960B (zh) * | 2011-04-22 | 2016-07-27 | 上海华虹宏力半导体制造有限公司 | 功率金属氧化物半导体场效应管及其形成方法 |
CN102184959B (zh) * | 2011-04-25 | 2016-03-02 | 上海华虹宏力半导体制造有限公司 | 功率mos管及其制造方法 |
US8658500B2 (en) * | 2011-07-11 | 2014-02-25 | Fairchild Semiconductor Corporation | Single crystal U-MOS gates using microwave crystal regrowth |
CN103762312A (zh) * | 2011-12-31 | 2014-04-30 | 广东中显科技有限公司 | 顶栅薄膜晶体管及其制造方法 |
CN103247529B (zh) * | 2012-02-10 | 2016-08-03 | 无锡华润上华半导体有限公司 | 一种沟槽场效应器件及其制作方法 |
JP5811973B2 (ja) | 2012-09-12 | 2015-11-11 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
JP2014056913A (ja) | 2012-09-12 | 2014-03-27 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置 |
JP6056292B2 (ja) * | 2012-09-12 | 2017-01-11 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
CN103928513B (zh) * | 2013-01-15 | 2017-03-29 | 无锡华润上华半导体有限公司 | 一种沟槽dmos器件及其制作方法 |
CN104752206B (zh) * | 2013-12-27 | 2017-12-08 | 中芯国际集成电路制造(上海)有限公司 | Trench MOS器件的制造方法及结构 |
CN110246842A (zh) * | 2018-03-08 | 2019-09-17 | 联华电子股份有限公司 | 一种制作半导体元件的方法 |
JP7157719B2 (ja) * | 2019-09-09 | 2022-10-20 | 株式会社東芝 | 半導体装置の製造方法 |
CN113782444A (zh) * | 2021-09-13 | 2021-12-10 | 济南市半导体元件实验所 | 一种底部厚氧沟槽mosfet器件的制造方法 |
Family Cites Families (21)
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US4567641A (en) * | 1982-04-12 | 1986-02-04 | General Electric Company | Method of fabricating semiconductor devices having a diffused region of reduced length |
DE3380136D1 (en) * | 1982-04-12 | 1989-08-03 | Gen Electric | Semiconductor device having a diffused region of reduced length and method of fabricating the same |
US5358695A (en) * | 1993-01-21 | 1994-10-25 | Physical Sciences, Inc. | Process for producing nanoscale ceramic powders |
KR100187678B1 (ko) * | 1993-11-23 | 1999-06-01 | 김영환 | 반도체 장치의 소자 분리막 형성방법 |
US5424231A (en) * | 1994-08-09 | 1995-06-13 | United Microelectronics Corp. | Method for manufacturing a VDMOS transistor |
US5637898A (en) * | 1995-12-22 | 1997-06-10 | North Carolina State University | Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance |
US5998833A (en) * | 1998-10-26 | 1999-12-07 | North Carolina State University | Power semiconductor devices having improved high frequency switching and breakdown characteristics |
US6291298B1 (en) * | 1999-05-25 | 2001-09-18 | Advanced Analogic Technologies, Inc. | Process of manufacturing Trench gate semiconductor device having gate oxide layer with multiple thicknesses |
US6420768B1 (en) * | 2000-12-15 | 2002-07-16 | General Semiconductor, Inc. | Trench schottky barrier rectifier and method of making the same |
JP4073176B2 (ja) | 2001-04-02 | 2008-04-09 | 新電元工業株式会社 | 半導体装置およびその製造方法 |
US6849898B2 (en) | 2001-08-10 | 2005-02-01 | Siliconix Incorporated | Trench MIS device with active trench corners and thick bottom oxide |
KR100458767B1 (ko) * | 2002-07-04 | 2004-12-03 | 주식회사 하이닉스반도체 | 반도체 소자의 소자 분리막 형성 방법 |
JP3713498B2 (ja) * | 2003-03-28 | 2005-11-09 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP2005019668A (ja) * | 2003-06-26 | 2005-01-20 | Shindengen Electric Mfg Co Ltd | 半導体装置 |
JP4945055B2 (ja) * | 2003-08-04 | 2012-06-06 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP2005252204A (ja) * | 2004-03-08 | 2005-09-15 | Toyota Motor Corp | 絶縁ゲート型半導体装置およびその製造方法 |
JP2005252203A (ja) * | 2004-03-08 | 2005-09-15 | Toyota Motor Corp | 絶縁ゲート型半導体装置およびその製造方法 |
JP2006210511A (ja) * | 2005-01-26 | 2006-08-10 | Oki Electric Ind Co Ltd | 半導体装置 |
JP2006344760A (ja) * | 2005-06-08 | 2006-12-21 | Sharp Corp | トレンチ型mosfet及びその製造方法 |
KR20060128472A (ko) * | 2005-06-10 | 2006-12-14 | 삼성전자주식회사 | 리세스된 게이트 전극을 갖는 모스 트랜지스터 및 그제조방법 |
KR100780629B1 (ko) * | 2006-11-15 | 2007-11-30 | 주식회사 하이닉스반도체 | 리세스 게이트를 갖는 반도체 소자의 제조 방법 |
-
2006
- 2006-12-26 KR KR1020060133855A patent/KR100824205B1/ko active IP Right Grant
-
2007
- 2007-09-18 JP JP2007241360A patent/JP5519902B2/ja not_active Expired - Fee Related
- 2007-09-18 US US11/898,991 patent/US7767530B2/en active Active
- 2007-09-26 TW TW096135787A patent/TWI366917B/zh active
- 2007-12-04 CN CN200710195244XA patent/CN101211977B/zh active Active
-
2010
- 2010-06-24 US US12/822,936 patent/US8637923B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US7767530B2 (en) | 2010-08-03 |
US20080150015A1 (en) | 2008-06-26 |
JP5519902B2 (ja) | 2014-06-11 |
KR100824205B1 (ko) | 2008-04-21 |
CN101211977A (zh) | 2008-07-02 |
JP2008166696A (ja) | 2008-07-17 |
US8637923B2 (en) | 2014-01-28 |
US20100258865A1 (en) | 2010-10-14 |
TW200828589A (en) | 2008-07-01 |
CN101211977B (zh) | 2011-04-20 |
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