TWI359453B - - Google Patents

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Publication number
TWI359453B
TWI359453B TW096112129A TW96112129A TWI359453B TW I359453 B TWI359453 B TW I359453B TW 096112129 A TW096112129 A TW 096112129A TW 96112129 A TW96112129 A TW 96112129A TW I359453 B TWI359453 B TW I359453B
Authority
TW
Taiwan
Prior art keywords
etching
tantalum nitride
film
sulfuric acid
acid
Prior art date
Application number
TW096112129A
Other languages
English (en)
Chinese (zh)
Other versions
TW200814181A (en
Inventor
Katsuya Eguchi
Naoya Hayamizu
Hiroyuki Fukui
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of TW200814181A publication Critical patent/TW200814181A/zh
Application granted granted Critical
Publication of TWI359453B publication Critical patent/TWI359453B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Weting (AREA)
  • Element Separation (AREA)
TW096112129A 2006-09-12 2007-04-04 Etching liquid, etching method, and method of manufacturing electronic component TW200814181A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006246785A JP4799332B2 (ja) 2006-09-12 2006-09-12 エッチング液、エッチング方法および電子部品の製造方法

Publications (2)

Publication Number Publication Date
TW200814181A TW200814181A (en) 2008-03-16
TWI359453B true TWI359453B (https=) 2012-03-01

Family

ID=39170256

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096112129A TW200814181A (en) 2006-09-12 2007-04-04 Etching liquid, etching method, and method of manufacturing electronic component

Country Status (4)

Country Link
US (1) US8183163B2 (https=)
JP (1) JP4799332B2 (https=)
KR (1) KR100925932B1 (https=)
TW (1) TW200814181A (https=)

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US9355874B2 (en) * 2011-09-24 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Silicon nitride etching in a single wafer apparatus
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KR20160010267A (ko) * 2014-07-17 2016-01-27 솔브레인 주식회사 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법
US9868902B2 (en) 2014-07-17 2018-01-16 Soulbrain Co., Ltd. Composition for etching
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CN105826184B (zh) * 2015-01-07 2018-10-16 中芯国际集成电路制造(上海)有限公司 去除图案晶圆上的氮化硅层的方法
US10147619B2 (en) 2015-08-27 2018-12-04 Toshiba Memory Corporation Substrate treatment apparatus, substrate treatment method, and etchant
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US10515820B2 (en) * 2016-03-30 2019-12-24 Tokyo Electron Limited Process and apparatus for processing a nitride structure without silica deposition
US10325779B2 (en) * 2016-03-30 2019-06-18 Tokyo Electron Limited Colloidal silica growth inhibitor and associated method and system
WO2018168874A1 (ja) 2017-03-15 2018-09-20 株式会社 東芝 エッチング液、エッチング方法、及び電子部品の製造方法
KR20200044426A (ko) * 2018-10-19 2020-04-29 동우 화인켐 주식회사 식각액 조성물 및 이에 포함되는 실란계 커플링제의 선정 방법
JP7246990B2 (ja) * 2019-03-26 2023-03-28 株式会社東芝 エッチング液、及びエッチング方法
JP2020205320A (ja) * 2019-06-17 2020-12-24 株式会社トクヤマ 窒化ケイ素エッチング液用添加剤
KR102782018B1 (ko) * 2019-07-12 2025-03-18 주식회사 케이씨텍 실리콘 질화막 식각액
JP6893268B1 (ja) * 2020-02-13 2021-06-23 株式会社サイオクス 構造体の製造方法
JP7646809B2 (ja) * 2020-07-30 2025-03-17 インテグリス・インコーポレーテッド 窒化シリコン膜を選択的にエッチングするための組成物及び方法
TWI833599B (zh) * 2022-08-26 2024-02-21 日商德山股份有限公司 半導體用處理液及半導體元件之製造方法
CN115353886B (zh) * 2022-08-31 2023-08-25 湖北兴福电子材料股份有限公司 一种磷酸基蚀刻液及其配制方法
TWI910475B (zh) * 2022-10-19 2026-01-01 美商恩特葛瑞斯股份有限公司 蝕刻劑組合物及其相關方法

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Also Published As

Publication number Publication date
JP4799332B2 (ja) 2011-10-26
JP2008071801A (ja) 2008-03-27
US20080064223A1 (en) 2008-03-13
US8183163B2 (en) 2012-05-22
KR20080024080A (ko) 2008-03-17
KR100925932B1 (ko) 2009-11-09
TW200814181A (en) 2008-03-16

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