CN100527366C - 在半导体器件中形成金属图案的方法 - Google Patents

在半导体器件中形成金属图案的方法 Download PDF

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CN100527366C
CN100527366C CNB200710002435XA CN200710002435A CN100527366C CN 100527366 C CN100527366 C CN 100527366C CN B200710002435X A CNB200710002435X A CN B200710002435XA CN 200710002435 A CN200710002435 A CN 200710002435A CN 100527366 C CN100527366 C CN 100527366C
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梁基洪
晋圭安
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SK Hynix Inc
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Abstract

一种在半导体器件中形成金属图案的方法，包括：准备具有用作金属图案的金属层的半成品衬底，进行清洗工艺，在所述金属层的上表面之上诱发氧化，以在所述金属层的上表面之上形成抗散射反射层，在所述抗散射反射层之上形成光致抗蚀剂图案，以及蚀刻被所述光致抗蚀剂图案暴露的所述抗散射反射层和所述金属层，以形成所述金属图案。

Description

在半导体器件中形成金属图案的方法
相关申请的交叉引用
本发明要求2006年6月29日提交的韩国专利申请第10-2006-0059745号的优先权，其通过引用整体结合于此。
技术领域
本发明涉及制造半导体器件的方法，更具体地，涉及在半导体器件中形成金属图案的方法。
背景技术
由于半导体器件变得高度集成，如晶体管和电容器的器件尺寸也变得非常小。因此，通常需要将耦合这些器件的金属图案形成为具有很小的尺寸。当小的金属图案形成在没有足够平坦化的部分时通常会发生限制。例如，当金属图案形成在具有过大的高度差的部分之上时，在光刻工艺期间，在金属层表面会产生散射反射，从而导致不理想的光致抗蚀剂图案形式。
不理想的光致抗蚀剂图案形式的实例包括条纹、图案塌缩以及图案线的异常线宽改变。图案线的异常线宽改变是指图案线变得太细或太粗。因此，已经提出了一种在金属图案的形成工艺中在金属层之上附加地形成氮氧化硅(SiON)层或底部抗反射涂(BARC)层的技术，以克服所述散射反射。但是，形成SiON层或BARC层通常需要进行额外的工艺，因此，金属图案的形成工艺会变得复杂。
发明内容
本发明的实施例旨在提供一种在半导体器件中形成金属图案的方法，其可减少形成金属图案时金属产生的散射反射，从而减少不理想的光致抗蚀剂图案形式的产生，并简化制造工艺。
根据本发明的一方面，提供了一种在半导体器件中形成金属图案的方法，包括：准备具有用作金属图案的金属层的半成品衬底，在所述金属层的上表面上进行诱发氧化的清洗工艺，以在所述金属层的上表面之上形成抗散射反射层；在所述抗散射反射层之上形成光致抗蚀剂图案；以及蚀刻被所述光致抗蚀剂图案暴露的所述抗散射反射层和所述金属层，以形成所述金属图案。
附图说明
图1至3所示为根据本发明的实施例在半导体器件中形成金属图案的方法的截面视图。
具体实施方式
本发明涉及在半导体器件中形成金属图案的方法。根据本发明的实施例，在用作金属图案的金属层形成之后进行诱发氧化的清洗工艺，以在所述金属层的上表面之上形成包括用于绝缘的基于氧化物材料的抗散射反射层。因此，减少了在光刻工艺中由金属导致的散射反射所产生的不理想的光致抗蚀剂图案形式。特别地，所述清洗工艺包括：使用稀释的硫酸和过氧化氢(DSP)化学品以便诱发氧化，以形成包括用于绝缘的基于氧化物材料的抗散射反射层。所述DSP化学品包含：硫酸(H2SO4)、过氧化氢(H2O2)、去离子水和氟化氢(HF)。因此，减少了在光刻工艺中由金属导致的散射反射，因此，可不再需要形成用于防止散射反射的氮氧化硅(SiON)层或底部抗反射涂(BARC)层的常规形成工艺。因此，可减少在光刻工艺中由散射反射导致的不理想的光致抗蚀剂图案形式，且所述工艺变得简化。
图1至3所示为根据本发明的实施例在半导体器件中形成金属图案的方法的截面视图。
参考图1，在包括晶体管的半成品衬底(未示出)之上形成绝缘层10。虽然未示出，后续的接触塞被置于绝缘层10中。
在绝缘层10之上形成扩散阻止层11。例如，扩散阻止层11可包括用钛(Ti)/氮化钛(TiN)配置的堆叠结构。在扩散阻止层11之上形成金属层12。例如，金属层12可包含钨(W)或铝(Al)。
在金属层12之上形成抗反射涂(ARC)层13。ARC层13可包括配置有Ti/TiN的堆叠结构、Ti层或TiN层。因为ARC层13包含金属，所以ARC层13可产生散射反射。因此，如果必要，可省略ARC层13的形成。
在所述衬底结构上进行诱发氧化的清洗工艺14，以形成抗散射反射层15。抗散射反射层15包含基于氧化物的材料。特别地，在清洗工艺14中，重要的是使用稀释的硫酸和过氧化氢(DSP)化学品以诱发氧化。所述DSP化学品包括含有硫酸(H2SO4)、过氧化氢(H2O2)、去离子水和氟化氢(HF)的混合化学品。所述DSP化学品中H2SO4对H2O2对去离子水对HF的比例范围为约1至6:50至500:1至10:10至50。
更详细地，在清洗工艺14中，所述DSP化学品中的H2O2产生氧化，在金属层12的上表面上自动产生抗散射反射层15。例如，抗散射反射层15可形成在ARC层13的表面之上。因为抗散射反射层15包括绝缘层，而不包含金属，所以抗散射反射层15能减少在后续的光刻过程中由金属产生的散射反射。抗散射反射层15的形成可用如下面提供的式1所示的化学式表示。
W+6H2O2→WO3+6H2O            [式1]
特别地，式1的详细式如下面的式2所述
6H2O2+6e-→6H2O+3O2-，H2O2：还原
W+3O2-→WO3+6e-，W0：氧化    [式2]
参考以上式1和2，金属层12包含例如钨。于是，生成的抗散射反射层15包括氧化钨层。
当金属层12包含铝时，抗散射反射层15包括氧化铝层。根据本发明的该实施例，进行诱发氧化以在所述金属层12的上表面上自动形成包括用于绝缘的基于金属氧化物的材料的抗散射反射层15的清洗工艺14，可使得由包含金属的金属层12或ARC层13所产生的散射反射减少。此外，可省略单独的氮氧化硅(SiON)层或底部抗反射涂(BARC)层的典型形成工艺。因为基于氧化物的抗散射反射层15可替换降低表面反射的SiON层或BARC层，所以这是可能的。因此，可减少不理想的光致抗蚀剂图案形式的出现，并且可在用于形成金属图案的后续光刻工艺中简化金属图案的形成工艺。例如，可通过减少光致抗蚀剂图案中所产生的条纹、图案塌缩及图案线的异常线宽改变以及尾部，来减少不理想的光致抗蚀剂图案形式的出现。
由于在清洗工艺14中，金属层12的上表面之上的杂质被去除，并同时发生了氧化，因此，可基本上减少穿透在金属层12的界面之间的杂质。因此，可稳定地维持金属层12的阻性特征。例如，当形成金属层12时，形成大的晶粒。这时，当衬底(晶片)承受较大应力时，由于所述晶粒，晶片中可产生裂缝。但是，根据本发明的实施例，晶粒间的缝隙因氧化而变为氧化物填充的，从而导致应力减小。因此，可减少晶片中裂缝的产生。
通过氧化在金属层12的上表面上形成的抗散射反射层15防止金属层12和后续的光致抗蚀剂图案之间直接接触，从而消除了所述金属图案对光致抗蚀剂碳层的影响。
参考图2，在抗散射反射层15之上形成光致抗蚀剂图案17。形成光致抗蚀剂图案17是为了限定所述金属图案。光致抗蚀剂图案17通过形成光致抗蚀剂层并用光掩膜进行曝光和显影工艺而形成。特别地，在曝光工艺中，抗散射反射层15可防止可由ARC层13和金属层12导致的散射反射。
参考图3，使用光致抗蚀剂图案17作为掩膜来进行蚀刻工艺，以顺序地蚀刻抗散射反射层15、ARC层13、金属层12以及扩散阻止层11。于是，形成抗散射反射图案15A、ARC图案13A、金属图案12A以及扩散阻止图案11A。
根据本发明的此实施例，形成用作金属图案的所述金属层之后，进行诱发氧化以在所述金属层的上表面上形成所述抗散射反射层的清洗工艺，可使得在光刻工艺中由金属产生的散射反射减少。而且，可省略用作抗散射反射层的单独的氮氧化硅(SiON)层或底部抗反射涂(BARC)层的典型形成工艺。所述抗散射反射层包含绝缘材料。因此，在半导体器件中形成所述金属图案的光刻工艺中，可减少散射反射所产生的不理想的光致抗蚀剂图案形式，且可简化该工艺。
虽然已结合特定实施例说明了本发明，显然，本领域技术人员可以做出各种变化和修改而不背离如所附权利要求所限定的本发明的精神和范围。

Claims (11)

1.一种在半导体器件中形成金属图案的方法，其包括：
准备具有用作金属图案的金属层的半成品衬底；
在所述金属层的上表面上进行诱发氧化的清洗工艺，以在所述金属层的上表面上形成抗散射反射层；
在所述抗散射反射层之上形成光致抗蚀剂图案；以及
蚀刻被所述光致抗蚀剂图案暴露的所述抗散射反射层和所述金属层，形成所述金属图案。
2.如权利要求1所述的方法，其中，进行所述清洗工艺包括使用稀释的硫酸和过氧化氢化学品。
3.如权利要求2所述的方法，其中，所述稀释的硫酸和过氧化氢化学品包含：硫酸(H2SO4)、过氧化氢(H2O2)、去离子水和氟化氢(HF)。
4.如权利要求3所述的方法，其中，所述稀释的硫酸和过氧化氢化学品中H2SO4对H2O2对去离子水对HF的比例范围为1至6:50至500:1至10:10至50。
5.如权利要求1所述的方法，其中，所述抗散射反射层包括基于金属氧化物的层。
6.如权利要求1所述的方法，其中，所述金属层包含钨和铝之一。
7.如权利要求1所述的方法，其中，所述抗散射反射层包括氧化钨层和氧化铝层之一。
8.如权利要求1所述的方法，其中，准备半成品衬底还包括：形成包括基于金属的材料的抗反射涂层以作为所述金属层的上表面。
9.如权利要求8所述的方法，其中，所述抗反射涂层包括从包含钛(Ti)和氮化钛(TiN)的堆叠结构、Ti层及TiN层所组成的组中选择的一个。
10.如权利要求1所述的方法，其还包括，在形成所述金属层之前：
在所述衬底之上形成绝缘层；以及
在所述绝缘层之上形成扩散阻止层。
11.如权利要求10所述的方法，其中，所述扩散阻止层包括含有Ti和TiN的堆叠结构。
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