TWI357639B - Electrically conductive connection with isolation - Google Patents

Electrically conductive connection with isolation Download PDF

Info

Publication number
TWI357639B
TWI357639B TW096117569A TW96117569A TWI357639B TW I357639 B TWI357639 B TW I357639B TW 096117569 A TW096117569 A TW 096117569A TW 96117569 A TW96117569 A TW 96117569A TW I357639 B TWI357639 B TW I357639B
Authority
TW
Taiwan
Prior art keywords
electrically insulating
layer
connecting layer
adhesive
roughness
Prior art date
Application number
TW096117569A
Other languages
English (en)
Chinese (zh)
Other versions
TW200807646A (en
Inventor
Stefan Illek
Andreas Ploessl
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of TW200807646A publication Critical patent/TW200807646A/zh
Application granted granted Critical
Publication of TWI357639B publication Critical patent/TWI357639B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistors
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0364—Conductor shape
    • H05K2201/0373—Conductors having a fine structure, e.g. providing a plurality of contact points with a structured tool
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01308—Manufacture or treatment of die-attach connectors using permanent auxiliary members, e.g. using alignment marks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07311—Treating the bonding area before connecting, e.g. by applying flux or cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07351—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H10W72/07353—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/331—Shapes of die-attach connectors
    • H10W72/334—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/381—Auxiliary members
    • H10W72/387—Flow barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Led Device Packages (AREA)
  • Wire Bonding (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Combinations Of Printed Boards (AREA)
TW096117569A 2006-05-19 2007-05-17 Electrically conductive connection with isolation TWI357639B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006023683 2006-05-19
DE102006028692.8A DE102006028692B4 (de) 2006-05-19 2006-06-22 Elektrisch leitende Verbindung mit isolierendem Verbindungsmedium

Publications (2)

Publication Number Publication Date
TW200807646A TW200807646A (en) 2008-02-01
TWI357639B true TWI357639B (en) 2012-02-01

Family

ID=38488603

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096117569A TWI357639B (en) 2006-05-19 2007-05-17 Electrically conductive connection with isolation

Country Status (7)

Country Link
US (1) US8102060B2 (https=)
EP (1) EP2018664A1 (https=)
JP (1) JP5208922B2 (https=)
KR (1) KR101367545B1 (https=)
DE (1) DE102006028692B4 (https=)
TW (1) TWI357639B (https=)
WO (1) WO2007134581A1 (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006023685A1 (de) 2005-09-29 2007-04-05 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102006035627A1 (de) * 2006-07-31 2008-02-07 Osram Opto Semiconductors Gmbh LED-Halbleiterkörper
US7977799B2 (en) * 2008-04-30 2011-07-12 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Planar packageless semiconductor structure with via and coplanar contacts
DE102008030816B4 (de) * 2008-06-30 2019-11-07 Osram Oled Gmbh Verfahren zur Herstellung eines Bauteils mit mindestens einem organischen Material
DE102011100457A1 (de) 2011-05-04 2012-11-08 Osram Opto Semiconductors Gmbh Elektronisches Bauteil mit einem Trägerelement, einer Verbindungsstruktur und einem Halbleiterchip
US10319881B2 (en) 2011-06-15 2019-06-11 Sensor Electronic Technology, Inc. Device including transparent layer with profiled surface for improved extraction
US10522714B2 (en) 2011-06-15 2019-12-31 Sensor Electronic Technology, Inc. Device with inverted large scale light extraction structures
JP2014517544A (ja) 2011-06-15 2014-07-17 センサー エレクトロニック テクノロジー インコーポレイテッド 大型の逆さ光取り出し構造付の装置
US9741899B2 (en) 2011-06-15 2017-08-22 Sensor Electronic Technology, Inc. Device with inverted large scale light extraction structures
US9337387B2 (en) 2011-06-15 2016-05-10 Sensor Electronic Technology, Inc. Emitting device with improved extraction
JPWO2013179766A1 (ja) 2012-05-30 2016-01-18 オリンパス株式会社 撮像装置、半導体装置および撮像ユニット
JP6395600B2 (ja) * 2012-05-30 2018-09-26 オリンパス株式会社 撮像装置の製造方法および半導体装置の製造方法
WO2013179767A1 (ja) * 2012-05-30 2013-12-05 オリンパス株式会社 撮像装置の製造方法および半導体装置の製造方法
DE102012112988A1 (de) 2012-12-21 2014-07-10 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement, Verfahren zur Herstellung eines optoelektronischen Bauelements und Scheinwerfer
DE102014115770B4 (de) * 2014-10-30 2018-03-29 Infineon Technologies Ag Verfahren zur verbindung eines substrats
US9721812B2 (en) * 2015-11-20 2017-08-01 International Business Machines Corporation Optical device with precoated underfill
US10461221B2 (en) 2016-01-18 2019-10-29 Sensor Electronic Technology, Inc. Semiconductor device with improved light propagation
DE102016103324A1 (de) 2016-02-25 2017-08-31 Osram Opto Semiconductors Gmbh Videowand-Modul und Verfahren zum Herstellen eines Videowand-Moduls
KR20220065292A (ko) 2020-11-13 2022-05-20 삼성전자주식회사 반도체 패키지 및 그의 제조 방법

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3666588A (en) * 1970-01-26 1972-05-30 Western Electric Co Method of retaining and bonding articles
DE3001613C2 (de) * 1980-01-17 1986-04-03 Siemens AG, 1000 Berlin und 8000 München Befestigung eines, eine monolithisch integrierte Halbleiterschaltung enthaltenden Halbleiterkörpers aus Silicium an einer Unterlage mit einem entsprechenden Verfahren hierzu
JPS60262430A (ja) 1984-06-08 1985-12-25 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
DE4122297A1 (de) 1991-07-05 1993-01-07 Messerschmitt Boelkow Blohm Elektronische oder optronische anordnung, insbesondere halbleiter-anordnuung
DE69320098T2 (de) * 1992-05-15 1999-04-01 Denso Corp., Kariya, Aichi Kaltleiterthermistor für Heizgeräte und Verfahren zur Herstellung
US5548091A (en) * 1993-10-26 1996-08-20 Tessera, Inc. Semiconductor chip connection components with adhesives and methods for bonding to the chip
EP0827632B1 (en) * 1995-05-22 2002-01-09 Hitachi Chemical Co., Ltd. Semiconductor device having a semiconductor chip electrically connected to a wiring substrate
DE19529490A1 (de) 1995-08-10 1997-02-13 Fraunhofer Ges Forschung Chipkontaktierungsverfahren, damit hergestellte elektronische Schaltung und Trägersubstrat zur Kontaktierung von Chips
US5684309A (en) 1996-07-11 1997-11-04 North Carolina State University Stacked quantum well aluminum indium gallium nitride light emitting diodes
US5789278A (en) * 1996-07-30 1998-08-04 Micron Technology, Inc. Method for fabricating chip modules
KR100527349B1 (ko) 1997-01-09 2005-11-09 니치아 카가쿠 고교 가부시키가이샤 질화물반도체소자
US5831277A (en) 1997-03-19 1998-11-03 Northwestern University III-nitride superlattice structures
DE59814431D1 (de) * 1997-09-29 2010-03-25 Osram Opto Semiconductors Gmbh Halbleiterlichtquelle und Verfahren zu ihrer Herstellung
US5861678A (en) * 1997-12-23 1999-01-19 Micron Technology, Inc. Method and system for attaching semiconductor dice to substrates
KR100906931B1 (ko) * 1998-02-26 2009-07-10 이비덴 가부시키가이샤 필드 바이어 구조를 갖는 다층프린트 배선판
DE19955747A1 (de) 1999-11-19 2001-05-23 Osram Opto Semiconductors Gmbh Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur
US6426565B1 (en) * 2000-03-22 2002-07-30 International Business Machines Corporation Electronic package and method of making same
US6404566B1 (en) 2000-04-04 2002-06-11 Lucent Technologies Inc. Apparatus and method for assembling optical devices
DE10046296C2 (de) * 2000-07-17 2002-10-10 Infineon Technologies Ag Elektronisches Chipbauteil mit einer integrierten Schaltung und Verfahren zu seiner Herstellung
US20020017652A1 (en) 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
WO2002025825A2 (en) * 2000-09-19 2002-03-28 Nanopierce Technologies, Inc. Method for assembling components and antennae in radio frequency identification devices
DE10163799B4 (de) * 2000-12-28 2006-11-23 Matsushita Electric Works, Ltd., Kadoma Halbleiterchip-Aufbausubstrat und Verfahren zum Herstellen eines solchen Aufbausubstrates
DE10149507A1 (de) * 2001-10-06 2003-04-10 Behr Gmbh & Co Wärmetauscher, insbesondere Flachrohr-Wärmetauscher eines Kraftfahrzeugs
US6962835B2 (en) * 2003-02-07 2005-11-08 Ziptronix, Inc. Method for room temperature metal direct bonding
DE10319782B4 (de) 2003-04-30 2009-01-02 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement mit einem Chipträgerelement
JP2004349399A (ja) * 2003-05-21 2004-12-09 Nec Corp 部品実装基板
DE102004030813B4 (de) * 2004-06-25 2007-03-29 Infineon Technologies Ag Verfahren zur Verbindung einer integrierten Schaltung mit einem Substrat und entsprechende Schaltungsanordnung
JP4565931B2 (ja) * 2004-08-25 2010-10-20 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2006114656A (ja) * 2004-10-14 2006-04-27 Seiko Epson Corp 半導体装置、半導体装置の実装構造、及び半導体装置の実装方法

Also Published As

Publication number Publication date
WO2007134581A1 (de) 2007-11-29
DE102006028692B4 (de) 2021-09-02
KR20090027639A (ko) 2009-03-17
US8102060B2 (en) 2012-01-24
US20090302429A1 (en) 2009-12-10
EP2018664A1 (de) 2009-01-28
JP5208922B2 (ja) 2013-06-12
DE102006028692A1 (de) 2007-11-22
JP2009537970A (ja) 2009-10-29
KR101367545B1 (ko) 2014-02-26
TW200807646A (en) 2008-02-01

Similar Documents

Publication Publication Date Title
TWI357639B (en) Electrically conductive connection with isolation
TWI358840B (en) Semiconductor and method of manufacturing semicond
EP3279951B1 (en) Nitride-semiconductor ultraviolet-light emitting element
TWI505501B (zh) 包含窗層與導光結構之半導體發光裝置
US10388834B2 (en) Nitride semiconductor wafer, manufacturing method thereof, nitride semiconductor ultraviolet light-emitting element, and nitride semiconductor ultraviolet light-emitting device
KR101329435B1 (ko) 지지 기판을 포함하는 복사-방출 반도체 몸체 및 이의 제조방법
CN101140977B (zh) 氮化物半导体发光元件及其制造方法
CN101194373A (zh) 移除半导体发光器件的生长基板的方法
CN108140703A (zh) 氮化物半导体紫外线发光装置及其制造方法
US9530930B2 (en) Method of fabricating semiconductor devices
WO2017208535A1 (ja) 窒化物半導体紫外線発光装置及びその製造方法
JP6546660B2 (ja) 窒化物半導体発光素子用の基台及びその製造方法
TW201817045A (zh) 紫外線發光裝置及其製造方法
CN101449368A (zh) 具有绝缘连接介质的导电连接
CN114023860B (zh) 发光二极管
TW200834977A (en) Method of making high brightness vertical light-emitting diodes and structure made thereby

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees