DE102006028692B4 - Elektrisch leitende Verbindung mit isolierendem Verbindungsmedium - Google Patents
Elektrisch leitende Verbindung mit isolierendem Verbindungsmedium Download PDFInfo
- Publication number
- DE102006028692B4 DE102006028692B4 DE102006028692.8A DE102006028692A DE102006028692B4 DE 102006028692 B4 DE102006028692 B4 DE 102006028692B4 DE 102006028692 A DE102006028692 A DE 102006028692A DE 102006028692 B4 DE102006028692 B4 DE 102006028692B4
- Authority
- DE
- Germany
- Prior art keywords
- component
- connecting layer
- until
- electrically insulating
- roughness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistors
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits by conductive adhesives
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0364—Conductor shape
- H05K2201/0373—Conductors having a fine structure, e.g. providing a plurality of contact points with a structured tool
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/018—Bonding of wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/013—Manufacture or treatment of die-attach connectors
- H10W72/01308—Manufacture or treatment of die-attach connectors using permanent auxiliary members, e.g. using alignment marks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
- H10W72/07311—Treating the bonding area before connecting, e.g. by applying flux or cleaning
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
- H10W72/07331—Connecting techniques
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
- H10W72/07351—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
- H10W72/07353—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in shapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/331—Shapes of die-attach connectors
- H10W72/334—Cross-sectional shape, i.e. in side view
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/381—Auxiliary members
- H10W72/387—Flow barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/931—Shapes of bond pads
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Led Device Packages (AREA)
- Wire Bonding (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Combinations Of Printed Boards (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102006028692.8A DE102006028692B4 (de) | 2006-05-19 | 2006-06-22 | Elektrisch leitende Verbindung mit isolierendem Verbindungsmedium |
| PCT/DE2007/000897 WO2007134581A1 (de) | 2006-05-19 | 2007-05-16 | Elektrisch leitende verbindung mit isolierendem verbindungsmedium |
| US12/301,566 US8102060B2 (en) | 2006-05-19 | 2007-05-16 | Electrically conducting connection with insulating connection medium |
| KR1020087030710A KR101367545B1 (ko) | 2006-05-19 | 2007-05-16 | 절연성 결합 매체를 이용하는 전기 전도적 결합 |
| JP2009510280A JP5208922B2 (ja) | 2006-05-19 | 2007-05-16 | デバイス、及び、電気伝導性接続部の製造方法 |
| EP07722445A EP2018664A1 (de) | 2006-05-19 | 2007-05-16 | Elektrisch leitende verbindung mit isolierendem verbindungsmedium |
| TW096117569A TWI357639B (en) | 2006-05-19 | 2007-05-17 | Electrically conductive connection with isolation |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102006023683 | 2006-05-19 | ||
| DE102006023683.1 | 2006-05-19 | ||
| DE102006028692.8A DE102006028692B4 (de) | 2006-05-19 | 2006-06-22 | Elektrisch leitende Verbindung mit isolierendem Verbindungsmedium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE102006028692A1 DE102006028692A1 (de) | 2007-11-22 |
| DE102006028692B4 true DE102006028692B4 (de) | 2021-09-02 |
Family
ID=38488603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102006028692.8A Active DE102006028692B4 (de) | 2006-05-19 | 2006-06-22 | Elektrisch leitende Verbindung mit isolierendem Verbindungsmedium |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8102060B2 (https=) |
| EP (1) | EP2018664A1 (https=) |
| JP (1) | JP5208922B2 (https=) |
| KR (1) | KR101367545B1 (https=) |
| DE (1) | DE102006028692B4 (https=) |
| TW (1) | TWI357639B (https=) |
| WO (1) | WO2007134581A1 (https=) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102006023685A1 (de) | 2005-09-29 | 2007-04-05 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
| DE102006035627A1 (de) * | 2006-07-31 | 2008-02-07 | Osram Opto Semiconductors Gmbh | LED-Halbleiterkörper |
| US7977799B2 (en) * | 2008-04-30 | 2011-07-12 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Planar packageless semiconductor structure with via and coplanar contacts |
| DE102008030816B4 (de) * | 2008-06-30 | 2019-11-07 | Osram Oled Gmbh | Verfahren zur Herstellung eines Bauteils mit mindestens einem organischen Material |
| DE102011100457A1 (de) | 2011-05-04 | 2012-11-08 | Osram Opto Semiconductors Gmbh | Elektronisches Bauteil mit einem Trägerelement, einer Verbindungsstruktur und einem Halbleiterchip |
| US10319881B2 (en) | 2011-06-15 | 2019-06-11 | Sensor Electronic Technology, Inc. | Device including transparent layer with profiled surface for improved extraction |
| US10522714B2 (en) | 2011-06-15 | 2019-12-31 | Sensor Electronic Technology, Inc. | Device with inverted large scale light extraction structures |
| JP2014517544A (ja) | 2011-06-15 | 2014-07-17 | センサー エレクトロニック テクノロジー インコーポレイテッド | 大型の逆さ光取り出し構造付の装置 |
| US9741899B2 (en) | 2011-06-15 | 2017-08-22 | Sensor Electronic Technology, Inc. | Device with inverted large scale light extraction structures |
| US9337387B2 (en) | 2011-06-15 | 2016-05-10 | Sensor Electronic Technology, Inc. | Emitting device with improved extraction |
| JPWO2013179766A1 (ja) | 2012-05-30 | 2016-01-18 | オリンパス株式会社 | 撮像装置、半導体装置および撮像ユニット |
| JP6395600B2 (ja) * | 2012-05-30 | 2018-09-26 | オリンパス株式会社 | 撮像装置の製造方法および半導体装置の製造方法 |
| WO2013179767A1 (ja) * | 2012-05-30 | 2013-12-05 | オリンパス株式会社 | 撮像装置の製造方法および半導体装置の製造方法 |
| DE102012112988A1 (de) | 2012-12-21 | 2014-07-10 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement, Verfahren zur Herstellung eines optoelektronischen Bauelements und Scheinwerfer |
| DE102014115770B4 (de) * | 2014-10-30 | 2018-03-29 | Infineon Technologies Ag | Verfahren zur verbindung eines substrats |
| US9721812B2 (en) * | 2015-11-20 | 2017-08-01 | International Business Machines Corporation | Optical device with precoated underfill |
| US10461221B2 (en) | 2016-01-18 | 2019-10-29 | Sensor Electronic Technology, Inc. | Semiconductor device with improved light propagation |
| DE102016103324A1 (de) | 2016-02-25 | 2017-08-31 | Osram Opto Semiconductors Gmbh | Videowand-Modul und Verfahren zum Herstellen eines Videowand-Moduls |
| KR20220065292A (ko) | 2020-11-13 | 2022-05-20 | 삼성전자주식회사 | 반도체 패키지 및 그의 제조 방법 |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4122297A1 (de) | 1991-07-05 | 1993-01-07 | Messerschmitt Boelkow Blohm | Elektronische oder optronische anordnung, insbesondere halbleiter-anordnuung |
| US5684309A (en) | 1996-07-11 | 1997-11-04 | North Carolina State University | Stacked quantum well aluminum indium gallium nitride light emitting diodes |
| US5831277A (en) | 1997-03-19 | 1998-11-03 | Northwestern University | III-nitride superlattice structures |
| EP0905797A2 (de) | 1997-09-29 | 1999-03-31 | Siemens Aktiengesellschaft | Halbleiterlichtquelle und Verfahren zu ihrer Herstellung |
| US6172382B1 (en) | 1997-01-09 | 2001-01-09 | Nichia Chemical Industries, Ltd. | Nitride semiconductor light-emitting and light-receiving devices |
| WO2001039282A2 (de) | 1999-11-19 | 2001-05-31 | Osram Opto Semiconductors Gmbh & Co. Ohg | Optische halbleitervorrichtung mit mehrfach-quantentopf-struktur |
| WO2002007209A1 (de) | 2000-07-17 | 2002-01-24 | Infineon Technologies Ag | Elektronisches chipbauteil mit einer integrierten schaltung und verfahren zur herstellung |
| WO2002013281A1 (de) | 2000-08-08 | 2002-02-14 | Osram Opto Semiconductors Gmbh | Lichtemittierender halbleiterchip und verfahren zu dessen herstellung |
| DE10163799A1 (de) | 2000-12-28 | 2002-07-25 | Matsushita Electric Works Ltd | Halbleiterchip-Aufbausubstrat und Verfahren zum Herstellen eines solchen Aufbausubstrates |
| DE10319782A1 (de) | 2003-04-30 | 2004-11-25 | Osram Opto Semiconductors Gmbh | Chipträgerelement und Bauelementgehäuse |
| DE102004030813A1 (de) | 2004-06-25 | 2006-01-19 | Infineon Technologies Ag | Verfahren zur Verbindung einer integrierten Schaltung mit einem Substrat und entsprechende Schaltungsanordnung |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3666588A (en) * | 1970-01-26 | 1972-05-30 | Western Electric Co | Method of retaining and bonding articles |
| DE3001613C2 (de) * | 1980-01-17 | 1986-04-03 | Siemens AG, 1000 Berlin und 8000 München | Befestigung eines, eine monolithisch integrierte Halbleiterschaltung enthaltenden Halbleiterkörpers aus Silicium an einer Unterlage mit einem entsprechenden Verfahren hierzu |
| JPS60262430A (ja) | 1984-06-08 | 1985-12-25 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| DE69320098T2 (de) * | 1992-05-15 | 1999-04-01 | Denso Corp., Kariya, Aichi | Kaltleiterthermistor für Heizgeräte und Verfahren zur Herstellung |
| US5548091A (en) * | 1993-10-26 | 1996-08-20 | Tessera, Inc. | Semiconductor chip connection components with adhesives and methods for bonding to the chip |
| EP0827632B1 (en) * | 1995-05-22 | 2002-01-09 | Hitachi Chemical Co., Ltd. | Semiconductor device having a semiconductor chip electrically connected to a wiring substrate |
| DE19529490A1 (de) | 1995-08-10 | 1997-02-13 | Fraunhofer Ges Forschung | Chipkontaktierungsverfahren, damit hergestellte elektronische Schaltung und Trägersubstrat zur Kontaktierung von Chips |
| US5789278A (en) * | 1996-07-30 | 1998-08-04 | Micron Technology, Inc. | Method for fabricating chip modules |
| US5861678A (en) * | 1997-12-23 | 1999-01-19 | Micron Technology, Inc. | Method and system for attaching semiconductor dice to substrates |
| KR100906931B1 (ko) * | 1998-02-26 | 2009-07-10 | 이비덴 가부시키가이샤 | 필드 바이어 구조를 갖는 다층프린트 배선판 |
| US6426565B1 (en) * | 2000-03-22 | 2002-07-30 | International Business Machines Corporation | Electronic package and method of making same |
| US6404566B1 (en) | 2000-04-04 | 2002-06-11 | Lucent Technologies Inc. | Apparatus and method for assembling optical devices |
| WO2002025825A2 (en) * | 2000-09-19 | 2002-03-28 | Nanopierce Technologies, Inc. | Method for assembling components and antennae in radio frequency identification devices |
| DE10149507A1 (de) * | 2001-10-06 | 2003-04-10 | Behr Gmbh & Co | Wärmetauscher, insbesondere Flachrohr-Wärmetauscher eines Kraftfahrzeugs |
| US6962835B2 (en) * | 2003-02-07 | 2005-11-08 | Ziptronix, Inc. | Method for room temperature metal direct bonding |
| JP2004349399A (ja) * | 2003-05-21 | 2004-12-09 | Nec Corp | 部品実装基板 |
| JP4565931B2 (ja) * | 2004-08-25 | 2010-10-20 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2006114656A (ja) * | 2004-10-14 | 2006-04-27 | Seiko Epson Corp | 半導体装置、半導体装置の実装構造、及び半導体装置の実装方法 |
-
2006
- 2006-06-22 DE DE102006028692.8A patent/DE102006028692B4/de active Active
-
2007
- 2007-05-16 JP JP2009510280A patent/JP5208922B2/ja not_active Expired - Fee Related
- 2007-05-16 WO PCT/DE2007/000897 patent/WO2007134581A1/de not_active Ceased
- 2007-05-16 KR KR1020087030710A patent/KR101367545B1/ko active Active
- 2007-05-16 EP EP07722445A patent/EP2018664A1/de not_active Withdrawn
- 2007-05-16 US US12/301,566 patent/US8102060B2/en active Active
- 2007-05-17 TW TW096117569A patent/TWI357639B/zh not_active IP Right Cessation
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4122297A1 (de) | 1991-07-05 | 1993-01-07 | Messerschmitt Boelkow Blohm | Elektronische oder optronische anordnung, insbesondere halbleiter-anordnuung |
| US5684309A (en) | 1996-07-11 | 1997-11-04 | North Carolina State University | Stacked quantum well aluminum indium gallium nitride light emitting diodes |
| US6172382B1 (en) | 1997-01-09 | 2001-01-09 | Nichia Chemical Industries, Ltd. | Nitride semiconductor light-emitting and light-receiving devices |
| US5831277A (en) | 1997-03-19 | 1998-11-03 | Northwestern University | III-nitride superlattice structures |
| EP0905797A2 (de) | 1997-09-29 | 1999-03-31 | Siemens Aktiengesellschaft | Halbleiterlichtquelle und Verfahren zu ihrer Herstellung |
| WO2001039282A2 (de) | 1999-11-19 | 2001-05-31 | Osram Opto Semiconductors Gmbh & Co. Ohg | Optische halbleitervorrichtung mit mehrfach-quantentopf-struktur |
| WO2002007209A1 (de) | 2000-07-17 | 2002-01-24 | Infineon Technologies Ag | Elektronisches chipbauteil mit einer integrierten schaltung und verfahren zur herstellung |
| DE10046296A1 (de) | 2000-07-17 | 2002-02-07 | Infineon Technologies Ag | Elektronisches Chipbauteil mit einer integrierten Schaltung und Verfahren zur Herstellung |
| WO2002013281A1 (de) | 2000-08-08 | 2002-02-14 | Osram Opto Semiconductors Gmbh | Lichtemittierender halbleiterchip und verfahren zu dessen herstellung |
| DE10163799A1 (de) | 2000-12-28 | 2002-07-25 | Matsushita Electric Works Ltd | Halbleiterchip-Aufbausubstrat und Verfahren zum Herstellen eines solchen Aufbausubstrates |
| DE10319782A1 (de) | 2003-04-30 | 2004-11-25 | Osram Opto Semiconductors Gmbh | Chipträgerelement und Bauelementgehäuse |
| DE102004030813A1 (de) | 2004-06-25 | 2006-01-19 | Infineon Technologies Ag | Verfahren zur Verbindung einer integrierten Schaltung mit einem Substrat und entsprechende Schaltungsanordnung |
Non-Patent Citations (2)
| Title |
|---|
| I. Schnitzer et al., „30% external quantum efficiency from surface textured, thin-film light-emitting diodes", Appl. Phys. Lett. 63 (16), 18. Oktober 1993, 2174 - 2176 |
| T. Takahashi, „Benzocyclobutene Resin For Thin Film Electronic Applications", Proc. 3rd Japan International SAMPE Symposium (1993), pp. 826-833 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2007134581A1 (de) | 2007-11-29 |
| KR20090027639A (ko) | 2009-03-17 |
| US8102060B2 (en) | 2012-01-24 |
| US20090302429A1 (en) | 2009-12-10 |
| EP2018664A1 (de) | 2009-01-28 |
| JP5208922B2 (ja) | 2013-06-12 |
| TWI357639B (en) | 2012-02-01 |
| DE102006028692A1 (de) | 2007-11-22 |
| JP2009537970A (ja) | 2009-10-29 |
| KR101367545B1 (ko) | 2014-02-26 |
| TW200807646A (en) | 2008-02-01 |
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