TWI357091B - - Google Patents

Download PDF

Info

Publication number
TWI357091B
TWI357091B TW093100372A TW93100372A TWI357091B TW I357091 B TWI357091 B TW I357091B TW 093100372 A TW093100372 A TW 093100372A TW 93100372 A TW93100372 A TW 93100372A TW I357091 B TWI357091 B TW I357091B
Authority
TW
Taiwan
Prior art keywords
substrate
processed
ring member
plasma processing
disposed
Prior art date
Application number
TW093100372A
Other languages
English (en)
Chinese (zh)
Other versions
TW200416801A (en
Inventor
Shosuke Endoh
Shinji Himori
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200416801A publication Critical patent/TW200416801A/zh
Application granted granted Critical
Publication of TWI357091B publication Critical patent/TWI357091B/zh

Links

Classifications

    • AHUMAN NECESSITIES
    • A47FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47JKITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
    • A47J37/00Baking; Roasting; Grilling; Frying
    • A47J37/06Roasters; Grills; Sandwich grills
    • A47J37/0623Small-size cooking ovens, i.e. defining an at least partially closed cooking cavity
    • A47J37/0664Accessories
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0402Apparatus for fluid treatment
    • H10P72/0418Apparatus for fluid treatment for etching
    • H10P72/0421Apparatus for fluid treatment for etching for drying etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • H01J37/32642Focus rings
    • AHUMAN NECESSITIES
    • A47FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47JKITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
    • A47J36/00Parts, details or accessories of cooking-vessels
    • A47J36/24Warming devices
    • A47J36/2483Warming devices with electrical heating means
    • A47J36/2488Warming devices with electrical heating means having infrared radiating elements
    • AHUMAN NECESSITIES
    • A47FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47JKITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
    • A47J37/00Baking; Roasting; Grilling; Frying
    • A47J37/06Roasters; Grills; Sandwich grills
    • A47J37/0694Broiling racks
    • AHUMAN NECESSITIES
    • A47FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47JKITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
    • A47J37/00Baking; Roasting; Grilling; Frying
    • A47J37/06Roasters; Grills; Sandwich grills
    • A47J37/07Roasting devices for outdoor use; Barbecues
    • A47J37/0786Accessories
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00Chucks or sockets
    • Y10T279/23Chucks or sockets with magnetic or electrostatic means

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Food Science & Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
TW093100372A 2003-01-07 2004-01-07 Plasma processing apparatus and focus ring TW200416801A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003001547 2003-01-07

Publications (2)

Publication Number Publication Date
TW200416801A TW200416801A (en) 2004-09-01
TWI357091B true TWI357091B (https=) 2012-01-21

Family

ID=32708821

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093100372A TW200416801A (en) 2003-01-07 2004-01-07 Plasma processing apparatus and focus ring

Country Status (5)

Country Link
US (2) US7850174B2 (https=)
JP (2) JP4421305B2 (https=)
KR (1) KR100657054B1 (https=)
CN (2) CN101996843B (https=)
TW (1) TW200416801A (https=)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200416801A (en) * 2003-01-07 2004-09-01 Tokyo Electron Ltd Plasma processing apparatus and focus ring
WO2004095529A2 (en) * 2003-03-21 2004-11-04 Tokyo Electron Limited Method and apparatus for reducing substrate backside deposition during processing
JP5080810B2 (ja) * 2004-11-02 2012-11-21 パナソニック株式会社 プラズマ処理方法およびプラズマ処理装置
US7767055B2 (en) 2004-12-03 2010-08-03 Tokyo Electron Limited Capacitive coupling plasma processing apparatus
JP4336320B2 (ja) * 2005-02-25 2009-09-30 キヤノンアネルバ株式会社 ウエハホルダ
KR101028625B1 (ko) * 2005-03-31 2011-04-12 도쿄엘렉트론가부시키가이샤 기판의 질화 처리 방법 및 절연막의 형성 방법
US20070032081A1 (en) * 2005-08-08 2007-02-08 Jeremy Chang Edge ring assembly with dielectric spacer ring
US7651571B2 (en) * 2005-12-22 2010-01-26 Kyocera Corporation Susceptor
KR100794308B1 (ko) * 2006-05-03 2008-01-11 삼성전자주식회사 반도체 플라즈마 장치
US8034409B2 (en) * 2006-12-20 2011-10-11 Lam Research Corporation Methods, apparatuses, and systems for fabricating three dimensional integrated circuits
JP5317424B2 (ja) 2007-03-28 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置
JP5248038B2 (ja) * 2007-05-22 2013-07-31 東京エレクトロン株式会社 載置台およびそれを用いたプラズマ処理装置
JP5227197B2 (ja) * 2008-06-19 2013-07-03 東京エレクトロン株式会社 フォーカスリング及びプラズマ処理装置
US9136105B2 (en) * 2008-06-30 2015-09-15 United Microelectronics Corp. Bevel etcher
US9543181B2 (en) * 2008-07-30 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Replaceable electrostatic chuck sidewall shield
US8869741B2 (en) * 2008-12-19 2014-10-28 Lam Research Corporation Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber
WO2010101191A1 (ja) * 2009-03-03 2010-09-10 東京エレクトロン株式会社 載置台構造、成膜装置、及び、原料回収方法
JP2010278166A (ja) * 2009-05-27 2010-12-09 Tokyo Electron Ltd プラズマ処理用円環状部品、及びプラズマ処理装置
CN101989543B (zh) * 2009-08-07 2012-09-05 中微半导体设备(上海)有限公司 一种用于减少基片背面聚合物的装置
JP5395633B2 (ja) * 2009-11-17 2014-01-22 東京エレクトロン株式会社 基板処理装置の基板載置台
JP5563347B2 (ja) * 2010-03-30 2014-07-30 東京エレクトロン株式会社 プラズマ処理装置及び半導体装置の製造方法
JP5503503B2 (ja) 2010-11-09 2014-05-28 東京エレクトロン株式会社 プラズマ処理装置
JP5741124B2 (ja) * 2011-03-29 2015-07-01 東京エレクトロン株式会社 プラズマ処理装置
CN103165494B (zh) * 2011-12-08 2015-12-09 中微半导体设备(上海)有限公司 一种清洁晶片背面聚合物的装置和方法
CN102522305B (zh) * 2011-12-27 2015-01-07 中微半导体设备(上海)有限公司 等离子体处理装置及聚焦环组件
CN103187232B (zh) * 2011-12-28 2015-09-16 中微半导体设备(上海)有限公司 一种减少晶片背面生成聚合物的聚焦环
KR20140101996A (ko) * 2013-02-13 2014-08-21 삼성전자주식회사 기판 지지유닛 및 이를 구비한 플라즈마 식각장치
CN103646841B (zh) * 2013-11-22 2016-01-27 上海华力微电子有限公司 一种等离子体刻蚀设备
JP5615454B1 (ja) * 2014-02-25 2014-10-29 コバレントマテリアル株式会社 フォーカスリング
CN105097630A (zh) * 2014-05-14 2015-11-25 北京北方微电子基地设备工艺研究中心有限责任公司 承载装置以及等离子刻蚀设备
CN105575863B (zh) * 2014-11-10 2019-02-22 中微半导体设备(上海)有限公司 等离子体处理装置、基片卸载装置及方法
JP6383647B2 (ja) * 2014-11-19 2018-08-29 東京エレクトロン株式会社 測定システムおよび測定方法
US20170002465A1 (en) * 2015-06-30 2017-01-05 Lam Research Corporation Separation of Plasma Suppression and Wafer Edge to Improve Edge Film Thickness Uniformity
US10340171B2 (en) 2016-05-18 2019-07-02 Lam Research Corporation Permanent secondary erosion containment for electrostatic chuck bonds
US11069553B2 (en) 2016-07-07 2021-07-20 Lam Research Corporation Electrostatic chuck with features for preventing electrical arcing and light-up and improving process uniformity
US10655224B2 (en) * 2016-12-20 2020-05-19 Lam Research Corporation Conical wafer centering and holding device for semiconductor processing
US10910195B2 (en) * 2017-01-05 2021-02-02 Lam Research Corporation Substrate support with improved process uniformity
KR102205922B1 (ko) * 2017-03-31 2021-01-22 베이징 이타운 세미컨덕터 테크놀로지 컴퍼니 리미티드 공정에서의 워크피스 상의 재료 증착 방지
CN110402481B (zh) * 2017-10-17 2023-07-21 株式会社爱发科 被处理体的处理装置
JP7101055B2 (ja) * 2018-06-12 2022-07-14 東京エレクトロン株式会社 静電チャック、フォーカスリング、支持台、プラズマ処理装置、及びプラズマ処理方法
JP7105666B2 (ja) 2018-09-26 2022-07-25 東京エレクトロン株式会社 プラズマ処理装置
US11450545B2 (en) * 2019-04-17 2022-09-20 Samsung Electronics Co., Ltd. Capacitively-coupled plasma substrate processing apparatus including a focus ring and a substrate processing method using the same
KR102214333B1 (ko) 2019-06-27 2021-02-10 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
US20220293397A1 (en) * 2021-03-10 2022-09-15 Applied Materials, Inc. Substrate edge ring that extends process environment beyond substrate diameter
US20240274401A1 (en) * 2023-02-14 2024-08-15 Kla Corporation Substrate position monitoring devices
KR20250154436A (ko) * 2023-02-28 2025-10-28 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치, 기판 지지부 및 에지 링의 소모 보정 방법

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3204836B2 (ja) * 1994-03-25 2001-09-04 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
TW323387B (https=) * 1995-06-07 1997-12-21 Tokyo Electron Co Ltd
US5904778A (en) * 1996-07-26 1999-05-18 Applied Materials, Inc. Silicon carbide composite article particularly useful for plasma reactors
US6284093B1 (en) * 1996-11-29 2001-09-04 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
US5740009A (en) * 1996-11-29 1998-04-14 Applied Materials, Inc. Apparatus for improving wafer and chuck edge protection
JP3071729B2 (ja) 1997-06-20 2000-07-31 九州日本電気株式会社 プラズマ処理装置
US6251215B1 (en) * 1998-06-03 2001-06-26 Applied Materials, Inc. Carrier head with a multilayer retaining ring for chemical mechanical polishing
US6159299A (en) * 1999-02-09 2000-12-12 Applied Materials, Inc. Wafer pedestal with a purge ring
US7141757B2 (en) * 2000-03-17 2006-11-28 Applied Materials, Inc. Plasma reactor with overhead RF source power electrode having a resonance that is virtually pressure independent
JP4592916B2 (ja) * 2000-04-25 2010-12-08 東京エレクトロン株式会社 被処理体の載置装置
US6489249B1 (en) * 2000-06-20 2002-12-03 Infineon Technologies Ag Elimination/reduction of black silicon in DT etch
JP4559595B2 (ja) * 2000-07-17 2010-10-06 東京エレクトロン株式会社 被処理体の載置装置及びプラズマ処理装置
JP2002110652A (ja) * 2000-10-03 2002-04-12 Rohm Co Ltd プラズマ処理方法およびその装置
US6475336B1 (en) * 2000-10-06 2002-11-05 Lam Research Corporation Electrostatically clamped edge ring for plasma processing
US6391787B1 (en) * 2000-10-13 2002-05-21 Lam Research Corporation Stepped upper electrode for plasma processing uniformity
JP4676074B2 (ja) 2001-02-15 2011-04-27 東京エレクトロン株式会社 フォーカスリング及びプラズマ処理装置
JP4686867B2 (ja) 2001-02-20 2011-05-25 東京エレクトロン株式会社 プラズマ処理装置
US6554954B2 (en) * 2001-04-03 2003-04-29 Applied Materials Inc. Conductive collar surrounding semiconductor workpiece in plasma chamber
US20030106646A1 (en) * 2001-12-11 2003-06-12 Applied Materials, Inc. Plasma chamber insert ring
AU2002366921A1 (en) * 2001-12-13 2003-07-09 Tokyo Electron Limited Ring mechanism, and plasma processing device using the ring mechanism
JP4106948B2 (ja) * 2002-03-29 2008-06-25 東京エレクトロン株式会社 被処理体の跳上り検出装置、被処理体の跳上り検出方法、プラズマ処理装置及びプラズマ処理方法
US6896765B2 (en) * 2002-09-18 2005-05-24 Lam Research Corporation Method and apparatus for the compensation of edge ring wear in a plasma processing chamber
US7252738B2 (en) * 2002-09-20 2007-08-07 Lam Research Corporation Apparatus for reducing polymer deposition on a substrate and substrate support
TW200416801A (en) * 2003-01-07 2004-09-01 Tokyo Electron Ltd Plasma processing apparatus and focus ring
US7244336B2 (en) * 2003-12-17 2007-07-17 Lam Research Corporation Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift

Also Published As

Publication number Publication date
US8114247B2 (en) 2012-02-14
KR20040063825A (ko) 2004-07-14
US20110048643A1 (en) 2011-03-03
KR100657054B1 (ko) 2006-12-13
US7850174B2 (en) 2010-12-14
CN101996843A (zh) 2011-03-30
CN101996843B (zh) 2013-05-01
JP2004235623A (ja) 2004-08-19
TW200416801A (en) 2004-09-01
JP2009177199A (ja) 2009-08-06
US20040134618A1 (en) 2004-07-15
JP5079729B2 (ja) 2012-11-21
CN1518073A (zh) 2004-08-04
JP4421305B2 (ja) 2010-02-24

Similar Documents

Publication Publication Date Title
TWI357091B (https=)
TWI803539B (zh) 支持組件及支持組件之組裝方法
CN101840878B (zh) 载置台结构和等离子体成膜装置
CN100375261C (zh) 等离子体处理装置、聚焦环和基座
CN108281342B (zh) 等离子体处理装置
KR101050641B1 (ko) 기판 처리 장치 및 샤워 헤드
TWI651798B (zh) 載置台及電漿處理裝置
TWI246873B (en) Plasma processing device
TWI762551B (zh) 電漿處理裝置
TW552637B (en) Plasma treating apparatus
CN112563186B (zh) 基片支承器和等离子体处理装置
JP3150058B2 (ja) プラズマ処理装置及びプラズマ処理方法
KR101898079B1 (ko) 플라즈마 처리 장치
JP7018801B2 (ja) プラズマ処理装置、及び被処理体の搬送方法
JP2011238825A (ja) プラズマ処理装置及び半導体装置の製造方法
US20190304814A1 (en) Plasma processing apparatus
US20080242086A1 (en) Plasma processing method and plasma processing apparatus
TW200903627A (en) Plasma processing apparatus and structure therein
CN112652514A (zh) 基板处理装置和基板处理方法
CN100539000C (zh) 电容耦合型等离子体处理装置
JP3276023B2 (ja) プラズマ処理装置の制御方法
JP4961179B2 (ja) 基板処理装置及び半導体装置の製造方法
JPH10152775A (ja) プラズマ処理装置

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees