JP2011238825A - プラズマ処理装置及び半導体装置の製造方法 - Google Patents
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- 239000006227 byproduct Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
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Abstract
【解決手段】リフターピン210は、ピン本体部211と、当該ピン本体部211の頂部に設けられピン本体部211の外径より大きな外径を有する蓋部212とを具備し、下部電極2は、蓋部212の外径より小さな内径を有しピン本体部211を収容するピン本体収容部201と、当該ピン本体収容部201の上部に設けられ蓋部212を収容する蓋収容部202とを有し、内部にリフターピン210が配設されるリフターピン用透孔200を具備し、リフターピン210を下降させた状態では蓋部212が蓋収容部202内に収容され、ピン本体収容部201の上部が蓋部212によって閉塞された状態となる。
【選択図】図2
Description
Claims (6)
- 処理チャンバーと、
前記処理チャンバー内に設けられ、高周波電力が印加される導電性金属からなる基材を有し、被処理基板が載置される載置台を兼ねた下部電極と、
前記処理チャンバー内に設けられ、前記下部電極と対向するように配置された上部電極と、
前記下部電極の上面に出没自在とされ、当該下部電極上に前記被処理基板を支持するための複数のリフターピンと、
を具備したプラズマ処理装置であって、
前記リフターピンは、ピン本体部と、当該ピン本体部の頂部に設けられ前記ピン本体部の外径より大きな外径を有する蓋部とを具備し、
前記下部電極は、前記蓋部の外径より小さな内径を有し前記ピン本体部を収容するピン本体収容部と、当該ピン本体収容部の上部に設けられ前記蓋部を収容する蓋収容部とを有し、内部に前記リフターピンが配設されるリフターピン用透孔を具備し、
前記リフターピンを下降させた状態では前記蓋部が前記蓋収容部内に収容され、前記ピン本体収容部の上部が前記蓋部によって閉塞された状態となるよう構成された
ことを特徴とするプラズマ処理装置。 - 請求項1記載のプラズマ処理装置であって、
前記下部電極上に、前記被処理基板の周囲を囲むように配設されたフォーカスリングと、
前記フォーカスリングを前記下部電極上に支持するための上下動可能とされたフォーカスリング用リフターピンと、
前記下部電極の前記基材と前記フォーカスリングとの間を、前記フォーカスリング用リフターピン及び電流制御素子を介して電気的に接続し、電位差に応じて直流電流を発生させる電気的接続機構と、
を具備したことを特徴とするプラズマ処理装置。 - 請求項2記載のプラズマ処理装置であって、
前記電流制御素子が抵抗素子からなることを特徴とするプラズマ処理装置。 - 請求項3記載のプラズマ処理装置であって、
前記抵抗素子は、前記下部電極の前記基材と前記フォーカスリングとが、20MΩ〜200MΩの抵抗値をもって電気的に接続されるよう構成されていることを特徴とするプラズマ処理装置。 - 請求項2記載のプラズマ処理装置であって、
前記電流制御素子がツェナーダイオードからなることを特徴とするプラズマ処理装置。 - 処理チャンバーと、
前記処理チャンバー内に設けられ、高周波電力が印加される導電性金属からなる基材を有し、被処理基板が載置される載置台を兼ねた下部電極と、
前記処理チャンバー内に設けられ、前記下部電極と対向するように配置された上部電極と、
前記下部電極の上面に出没自在とされ、当該下部電極上に前記被処理基板を支持するための複数のリフターピンと、
を具備したプラズマ処理装置を用いて前記被処理基板にプラズマ処理を行い半導体装置を製造する半導体装置の製造方法であって、
ピン本体部と、当該ピン本体部の頂部に設けられ前記ピン本体部の外径より大きな外径を有する蓋部とを具備した前記リフターピンを用いるとともに、
前記蓋部の外径より小さな内径を有し前記ピン本体部を収容するピン本体収容部と、当該ピン本体収容部の上部に設けられ前記蓋部を収容する蓋収容部とを有し、内部に前記リフターピンが配設されるリフターピン用透孔を具備した下部電極を用い、
前記リフターピンを下降させ、前記蓋部が前記蓋収容部内に収容され、前記ピン本体収容部の上部が前記蓋部によって閉塞された状態としてプラズマ処理を行う
ことを特徴とする半導体装置の製造方法。
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JP2010109958A JP5584517B2 (ja) | 2010-05-12 | 2010-05-12 | プラズマ処理装置及び半導体装置の製造方法 |
TW100115776A TWI523099B (zh) | 2010-05-12 | 2011-05-05 | 電漿處理裝置及半導體裝置之製造方法 |
KR1020110044534A KR101812646B1 (ko) | 2010-05-12 | 2011-05-12 | 플라즈마 처리 장치 및 반도체 장치의 제조 방법 |
US13/106,441 US9011637B2 (en) | 2010-05-12 | 2011-05-12 | Plasma processing apparatus and method of manufacturing semiconductor device |
CN201110125334.8A CN102243977B (zh) | 2010-05-12 | 2011-05-12 | 等离子体处理装置及半导体装置的制造方法 |
US14/663,713 US9142391B2 (en) | 2010-05-12 | 2015-03-20 | Method of manufacturing semiconductor device |
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Cited By (7)
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WO2013024842A1 (ja) * | 2011-08-17 | 2013-02-21 | 東京エレクトロン株式会社 | 半導体製造装置及び処理方法 |
JP2014022518A (ja) * | 2012-07-17 | 2014-02-03 | Tokyo Electron Ltd | 下部電極、及びプラズマ処理装置 |
KR20140094475A (ko) | 2013-01-22 | 2014-07-30 | 도쿄엘렉트론가부시키가이샤 | 탑재대 및 플라즈마 처리 장치 |
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US9011637B2 (en) | 2015-04-21 |
US9142391B2 (en) | 2015-09-22 |
US20150200124A1 (en) | 2015-07-16 |
US20110287631A1 (en) | 2011-11-24 |
TW201207933A (en) | 2012-02-16 |
KR101812646B1 (ko) | 2017-12-27 |
TWI523099B (zh) | 2016-02-21 |
CN102243977A (zh) | 2011-11-16 |
CN102243977B (zh) | 2014-12-10 |
KR20110125188A (ko) | 2011-11-18 |
JP5584517B2 (ja) | 2014-09-03 |
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