JP2014022518A - 下部電極、及びプラズマ処理装置 - Google Patents
下部電極、及びプラズマ処理装置 Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims abstract description 64
- 239000000463 material Substances 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 48
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 46
- 229920002994 synthetic fiber Polymers 0.000 claims abstract description 22
- 239000011810 insulating material Substances 0.000 claims abstract description 9
- 239000007921 spray Substances 0.000 claims abstract description 7
- 239000004570 mortar (masonry) Substances 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 23
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 5
- 239000002245 particle Substances 0.000 abstract description 5
- 239000010936 titanium Substances 0.000 abstract description 5
- 229910052719 titanium Inorganic materials 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 39
- 239000007789 gas Substances 0.000 description 31
- 238000000034 method Methods 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 7
- 238000001020 plasma etching Methods 0.000 description 7
- 239000003507 refrigerant Substances 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 229910010413 TiO 2 Inorganic materials 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 230000010287 polarization Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32559—Protection means, e.g. coatings
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/3255—Material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
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- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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Abstract
【解決手段】下部電極2は、導電性の基材2aと、静電チャック6と、フォーカスリング5と、導電性の溶射膜100とを備える。導電性の基材2aは、高周波電力が印加される。静電チャック6は、基材2aの上面に設けられて電極6aを覆う絶縁層6bを有し、プラズマ処理の処理対象となる半導体ウエハWを絶縁層6bに静電吸着する。フォーカスリング5は、静電チャック6の絶縁層6bの上面に、半導体ウエハWの周囲を囲むように配設される。導電性の溶射膜100は、静電チャック6の絶縁層6bのうちフォーカスリング5と基材2aとに挟まれた部分に配設され、絶縁材料にチタニアが所定の重量比率で配合された合成材料を用いて形成される。
【選択図】図2
Description
2 下部電極
2a 基材
5 フォーカスリング
6 静電チャック
6a 電極
6b 絶縁層
16 上部電極
100、200 溶射膜
Claims (5)
- 高周波電力が印加される導電性の基材と、
前記基材の上面に設けられて電極を覆う絶縁層を有し、前記電極に印加される電圧に基づいて、プラズマ処理の処理対象となる被処理基板を前記絶縁層に静電吸着する静電チャックと、
前記静電チャックの前記絶縁層の上面に、前記被処理基板の周囲を囲むように配設されたフォーカスリングと、
前記静電チャックの前記絶縁層のうち前記フォーカスリングと前記基材とに挟まれた部分に配設され、前記絶縁層を形成する絶縁材料にチタニアが所定の重量比率で配合された合成材料を用いて形成された導電性の溶射膜と
を備えたことを特徴とする下部電極。 - 前記溶射膜は、前記静電チャックの前記絶縁層のうち前記フォーカスリングと前記基材とに挟まれた部分の比抵抗が106〜1010Ω・cmとなるように、前記合成材料を用いて形成されることを特徴とする請求項1に記載の下部電極。
- 前記所定の重量比率は、10〜30wt%であることを特徴とする請求項1または2に記載の下部電極。
- 前記溶射膜は、断面視ですり鉢形状に形成されることを特徴とする請求項1〜3のいずれか一つに記載の下部電極。
- プラズマ処理空間を画成する処理容器と、
前記処理容器内に設けられ、被処理基板が載置される下部電極と、
前記プラズマ処理空間を介して前記下部電極と対向して配置された上部電極とを備えたプラズマ処理装置であって、
前記下部電極は、
高周波電力が印加される導電性の基材と、
前記基材の上面に設けられて電極を覆う絶縁層を有し、前記電極に印加される電圧に基づいて前記被処理基板を前記絶縁層に静電吸着する静電チャックと、
前記静電チャックの前記絶縁層の上面に、前記被処理基板の周囲を囲むように配設されたフォーカスリングと、
前記静電チャックの前記絶縁層のうち前記フォーカスリングと前記基材とに挟まれた部分に配設され、前記絶縁層を形成する絶縁材料にチタニアが所定の重量比率で配合された合成材料を用いて形成された溶射膜と
を備えたことを特徴とするプラズマ処理装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012158842A JP5982206B2 (ja) | 2012-07-17 | 2012-07-17 | 下部電極、及びプラズマ処理装置 |
PCT/JP2013/068166 WO2014013863A1 (ja) | 2012-07-17 | 2013-07-02 | 下部電極、及びプラズマ処理装置 |
KR1020147035302A KR102070706B1 (ko) | 2012-07-17 | 2013-07-02 | 하부 전극 및 플라즈마 처리 장치 |
US14/408,380 US10269543B2 (en) | 2012-07-17 | 2013-07-02 | Lower electrode and plasma processing apparatus |
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JP2012158842A JP5982206B2 (ja) | 2012-07-17 | 2012-07-17 | 下部電極、及びプラズマ処理装置 |
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JP5982206B2 JP5982206B2 (ja) | 2016-08-31 |
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JP (1) | JP5982206B2 (ja) |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2019087977A1 (ja) * | 2017-10-30 | 2019-05-09 | 日本碍子株式会社 | 静電チャック及びその製法 |
JP2019102638A (ja) * | 2017-12-01 | 2019-06-24 | 東京エレクトロン株式会社 | 支持アセンブリ及び支持アセンブリの組立方法 |
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US10083853B2 (en) * | 2015-10-19 | 2018-09-25 | Lam Research Corporation | Electrostatic chuck design for cooling-gas light-up prevention |
KR101722382B1 (ko) * | 2016-01-08 | 2017-04-03 | 주식회사 윈텔 | 플라즈마 처리 장치 |
KR102604063B1 (ko) | 2016-08-18 | 2023-11-21 | 삼성전자주식회사 | 정전 척 어셈블리 및 이를 포함하는 기판 처리 장치 |
JP7134695B2 (ja) * | 2018-04-27 | 2022-09-12 | 東京エレクトロン株式会社 | プラズマ処理装置、及び電源制御方法 |
JP7142551B2 (ja) * | 2018-12-03 | 2022-09-27 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
WO2023008209A1 (ja) * | 2021-07-28 | 2023-02-02 | 東京エレクトロン株式会社 | 基板支持器及び基板処理装置 |
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JP2003309110A (ja) * | 2002-04-17 | 2003-10-31 | Tokyo Electron Ltd | プラズマ処理装置およびプラズマ処理方法 |
JP2011009351A (ja) * | 2009-06-24 | 2011-01-13 | Hitachi High-Technologies Corp | プラズマ処理装置およびプラズマ処理方法 |
JP2011210958A (ja) * | 2010-03-30 | 2011-10-20 | Tokyo Electron Ltd | プラズマ処理装置及び半導体装置の製造方法 |
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JP5496630B2 (ja) * | 2009-12-10 | 2014-05-21 | 東京エレクトロン株式会社 | 静電チャック装置 |
KR101147961B1 (ko) * | 2011-02-17 | 2012-05-24 | 주식회사 템네스트 | 반도체 제조설비의 정전척 |
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- 2013-07-02 WO PCT/JP2013/068166 patent/WO2014013863A1/ja active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH06232243A (ja) * | 1993-01-29 | 1994-08-19 | Sumitomo Metal Ind Ltd | 静電チャック |
JP2003309110A (ja) * | 2002-04-17 | 2003-10-31 | Tokyo Electron Ltd | プラズマ処理装置およびプラズマ処理方法 |
JP2011009351A (ja) * | 2009-06-24 | 2011-01-13 | Hitachi High-Technologies Corp | プラズマ処理装置およびプラズマ処理方法 |
JP2011210958A (ja) * | 2010-03-30 | 2011-10-20 | Tokyo Electron Ltd | プラズマ処理装置及び半導体装置の製造方法 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2019087977A1 (ja) * | 2017-10-30 | 2019-05-09 | 日本碍子株式会社 | 静電チャック及びその製法 |
JP6518024B1 (ja) * | 2017-10-30 | 2019-05-22 | 日本碍子株式会社 | 静電チャック及びその製法 |
US11282734B2 (en) | 2017-10-30 | 2022-03-22 | Ngk Insulators, Ltd. | Electrostatic chuck and method for manufacturing the same |
JP2019102638A (ja) * | 2017-12-01 | 2019-06-24 | 東京エレクトロン株式会社 | 支持アセンブリ及び支持アセンブリの組立方法 |
JP7033441B2 (ja) | 2017-12-01 | 2022-03-10 | 東京エレクトロン株式会社 | プラズマ処理装置 |
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US10269543B2 (en) | 2019-04-23 |
US20150206722A1 (en) | 2015-07-23 |
KR102070706B1 (ko) | 2020-01-29 |
JP5982206B2 (ja) | 2016-08-31 |
WO2014013863A1 (ja) | 2014-01-23 |
KR20150035694A (ko) | 2015-04-07 |
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