TWI324813B - Devices and methods for integrated circuit manufacturing - Google Patents
Devices and methods for integrated circuit manufacturing Download PDFInfo
- Publication number
- TWI324813B TWI324813B TW096133040A TW96133040A TWI324813B TW I324813 B TWI324813 B TW I324813B TW 096133040 A TW096133040 A TW 096133040A TW 96133040 A TW96133040 A TW 96133040A TW I324813 B TWI324813 B TW I324813B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- integrated circuit
- region
- ejection device
- doped
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 39
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 230000008569 process Effects 0.000 claims description 26
- 229910052732 germanium Inorganic materials 0.000 claims description 24
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 24
- 239000012530 fluid Substances 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 12
- 238000010304 firing Methods 0.000 claims description 11
- 230000005284 excitation Effects 0.000 claims description 10
- 230000000694 effects Effects 0.000 claims description 8
- 230000007246 mechanism Effects 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000011800 void material Substances 0.000 claims description 3
- 210000003298 dental enamel Anatomy 0.000 claims 1
- 239000008393 encapsulating agent Substances 0.000 claims 1
- 230000037452 priming Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 110
- 239000000758 substrate Substances 0.000 description 41
- 239000000463 material Substances 0.000 description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 12
- 229920005591 polysilicon Polymers 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 9
- 239000004575 stone Substances 0.000 description 9
- 230000000873 masking effect Effects 0.000 description 7
- 239000004020 conductor Substances 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 238000007639 printing Methods 0.000 description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 229910052707 ruthenium Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000000746 purification Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000003487 electrochemical reaction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 238000002144 chemical decomposition reaction Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000012567 medical material Substances 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 239000005445 natural material Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/015—Ink jet characterised by the jet generation process
- B41J2/04—Ink jet characterised by the jet generation process generating single droplets or particles on demand
- B41J2/045—Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14016—Structure of bubble jet print heads
- B41J2/14072—Electrical connections, e.g. details on electrodes, connecting the chip to the outside...
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14016—Structure of bubble jet print heads
- B41J2/14088—Structure of heating means
- B41J2/14112—Resistive element
- B41J2/14129—Layer structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
- B41J2202/01—Embodiments of or processes related to ink-jet heads
- B41J2202/13—Heads having an integrated circuit
Landscapes
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Facsimile Heads (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/055,161 US6740536B2 (en) | 2001-10-26 | 2001-10-26 | Devices and methods for integrated circuit manufacturing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200802716A TW200802716A (en) | 2008-01-01 |
| TWI324813B true TWI324813B (en) | 2010-05-11 |
Family
ID=21996024
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096133040A TWI324813B (en) | 2001-10-26 | 2002-10-25 | Devices and methods for integrated circuit manufacturing |
| TW091125139A TWI315904B (en) | 2001-10-26 | 2002-10-25 | A process of making a multi-layered intergrated circuit and a slot fed print head useful for lnk jet printers |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091125139A TWI315904B (en) | 2001-10-26 | 2002-10-25 | A process of making a multi-layered intergrated circuit and a slot fed print head useful for lnk jet printers |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6740536B2 (enExample) |
| EP (1) | EP1306214B1 (enExample) |
| JP (1) | JP4746814B2 (enExample) |
| KR (1) | KR100962888B1 (enExample) |
| CN (2) | CN1442901B (enExample) |
| DE (1) | DE60231462D1 (enExample) |
| TW (2) | TWI324813B (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003224269A (ja) * | 2001-10-26 | 2003-08-08 | Hewlett Packard Co <Hp> | 集積回路を製造するための装置および方法 |
| US6740536B2 (en) * | 2001-10-26 | 2004-05-25 | Hewlett-Packard Develpment Corporation, L.P. | Devices and methods for integrated circuit manufacturing |
| US20050236358A1 (en) * | 2004-04-26 | 2005-10-27 | Shen Buswell | Micromachining methods and systems |
| US7767103B2 (en) * | 2004-09-14 | 2010-08-03 | Lexmark International, Inc. | Micro-fluid ejection assemblies |
| US7150516B2 (en) * | 2004-09-28 | 2006-12-19 | Hewlett-Packard Development Company, L.P. | Integrated circuit and method for manufacturing |
| US8029105B2 (en) | 2007-10-17 | 2011-10-04 | Eastman Kodak Company | Ambient plasma treatment of printer components |
| PT2229279E (pt) | 2007-12-02 | 2012-07-25 | Hewlett Packard Development Co | Redes terrestres de matriz de cabeça de impressão electricamente ligadas e electricamente isoladas como circuito flexível |
| JP5777762B2 (ja) * | 2014-03-20 | 2015-09-09 | ヒューレット−パッカード デベロップメント カンパニー エル．ピー．Ｈｅｗｌｅｔｔ‐Ｐａｃｋａｒｄ Ｄｅｖｅｌｏｐｍｅｎｔ Ｃｏｍｐａｎｙ， Ｌ．Ｐ． | 電気的に絶縁されるプリントヘッドダイ接地ネットワークをフレキシブル回路で電気的に接続する方法 |
| US10569544B2 (en) | 2016-07-12 | 2020-02-25 | Hewlett-Packard Development Company, L.P. | Multi-layered nozzle fluid ejection device |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4719477A (en) * | 1986-01-17 | 1988-01-12 | Hewlett-Packard Company | Integrated thermal ink jet printhead and method of manufacture |
| ATE144194T1 (de) * | 1991-08-01 | 1996-11-15 | Canon Kk | Aufzeichnungskopfherstellungsverfahren |
| US6406740B1 (en) | 1992-06-23 | 2002-06-18 | Canon Kabushiki Kaisha | Method of manufacturing a liquid jet recording apparatus and such a liquid jet recording apparatus |
| US5448273A (en) | 1993-06-22 | 1995-09-05 | Xerox Corporation | Thermal ink jet printhead protective layers |
| JP2909796B2 (ja) * | 1993-12-28 | 1999-06-23 | ローム株式会社 | サーマルプリントヘッドおよびその製造方法 |
| JP3380836B2 (ja) * | 1995-07-04 | 2003-02-24 | 松下電器産業株式会社 | Ｍｉｓ半導体装置及びその製造方法 |
| US5903031A (en) * | 1995-07-04 | 1999-05-11 | Matsushita Electric Industrial Co., Ltd. | MIS device, method of manufacturing the same, and method of diagnosing the same |
| JP3315321B2 (ja) * | 1996-08-29 | 2002-08-19 | 株式会社東芝 | 半導体装置とその製造方法および不揮発性半導体記憶装置とその製造方法 |
| GB9622177D0 (en) * | 1996-10-24 | 1996-12-18 | Xaar Ltd | Passivation of ink jet print heads |
| US6290337B1 (en) | 1996-10-31 | 2001-09-18 | Hewlett-Packard Company | Print head for ink-jet printing and a method for making print heads |
| JPH1126757A (ja) * | 1997-06-30 | 1999-01-29 | Toshiba Corp | 半導体装置及びその製造方法 |
| US6284147B1 (en) | 1997-07-15 | 2001-09-04 | Silverbrook Research Pty Ltd | Method of manufacture of a stacked electrostatic ink jet printer |
| US6286939B1 (en) | 1997-09-26 | 2001-09-11 | Hewlett-Packard Company | Method of treating a metal surface to increase polymer adhesion |
| US6039438A (en) | 1997-10-21 | 2000-03-21 | Hewlett-Packard Company | Limiting propagation of thin film failures in an inkjet printhead |
| US6106096A (en) * | 1997-12-15 | 2000-08-22 | Lexmark International, Inc. | Printhead stress relief |
| US6474780B1 (en) * | 1998-04-16 | 2002-11-05 | Canon Kabushiki Kaisha | Liquid discharge head, cartridge having such head, liquid discharge apparatus provided with such cartridge, and method for manufacturing liquid discharge heads |
| US5998288A (en) * | 1998-04-17 | 1999-12-07 | Advanced Micro Devices, Inc. | Ultra thin spacers formed laterally adjacent a gate conductor recessed below the upper surface of a substrate |
| JP2002261277A (ja) * | 2001-03-06 | 2002-09-13 | Toshiba Corp | 半導体装置及びその製造方法 |
| US6740536B2 (en) * | 2001-10-26 | 2004-05-25 | Hewlett-Packard Develpment Corporation, L.P. | Devices and methods for integrated circuit manufacturing |
-
2001
- 2001-10-26 US US10/055,161 patent/US6740536B2/en not_active Expired - Fee Related
-
2002
- 2002-10-04 JP JP2002292236A patent/JP4746814B2/ja not_active Expired - Lifetime
- 2002-10-25 KR KR1020020065410A patent/KR100962888B1/ko not_active Expired - Lifetime
- 2002-10-25 CN CN021470529A patent/CN1442901B/zh not_active Expired - Lifetime
- 2002-10-25 TW TW096133040A patent/TWI324813B/zh not_active IP Right Cessation
- 2002-10-25 US US10/280,414 patent/US7004558B2/en not_active Expired - Lifetime
- 2002-10-25 TW TW091125139A patent/TWI315904B/zh not_active IP Right Cessation
- 2002-10-25 EP EP02023965A patent/EP1306214B1/en not_active Expired - Lifetime
- 2002-10-25 DE DE60231462T patent/DE60231462D1/de not_active Expired - Lifetime
- 2002-10-25 CN CN2007101616152A patent/CN101444993B/zh not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CN1442901A (zh) | 2003-09-17 |
| KR100962888B1 (ko) | 2010-06-10 |
| TW200802716A (en) | 2008-01-01 |
| TWI315904B (en) | 2009-10-11 |
| EP1306214A3 (en) | 2004-03-03 |
| CN101444993A (zh) | 2009-06-03 |
| EP1306214B1 (en) | 2009-03-11 |
| US20030080362A1 (en) | 2003-05-01 |
| JP2003218353A (ja) | 2003-07-31 |
| CN1442901B (zh) | 2012-05-09 |
| DE60231462D1 (de) | 2009-04-23 |
| JP4746814B2 (ja) | 2011-08-10 |
| US7004558B2 (en) | 2006-02-28 |
| EP1306214A2 (en) | 2003-05-02 |
| US6740536B2 (en) | 2004-05-25 |
| CN101444993B (zh) | 2011-04-13 |
| US20030207477A1 (en) | 2003-11-06 |
| KR20030035950A (ko) | 2003-05-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |