TWI303355B - Lithographic apparatus, chuck system thereof and device manufacturing method - Google Patents
Lithographic apparatus, chuck system thereof and device manufacturing method Download PDFInfo
- Publication number
- TWI303355B TWI303355B TW093140280A TW93140280A TWI303355B TW I303355 B TWI303355 B TW I303355B TW 093140280 A TW093140280 A TW 093140280A TW 93140280 A TW93140280 A TW 93140280A TW I303355 B TWI303355 B TW I303355B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- chuck
- frame
- support
- substrate support
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims description 271
- 238000001459 lithography Methods 0.000 claims description 57
- 230000005855 radiation Effects 0.000 claims description 40
- 230000003287 optical effect Effects 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 12
- 230000008859 change Effects 0.000 claims description 6
- 230000008602 contraction Effects 0.000 claims description 4
- 238000005286 illumination Methods 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 230000003993 interaction Effects 0.000 claims 1
- 239000002689 soil Substances 0.000 claims 1
- 239000007788 liquid Substances 0.000 description 27
- 238000007654 immersion Methods 0.000 description 16
- 238000010438 heat treatment Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 239000010410 layer Substances 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 238000000671 immersion lithography Methods 0.000 description 5
- 230000033001 locomotion Effects 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 230000003068 static effect Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000006094 Zerodur Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 210000000887 face Anatomy 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000001953 sensory effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/744,088 US7119884B2 (en) | 2003-12-24 | 2003-12-24 | Lithographic apparatus and device manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200530764A TW200530764A (en) | 2005-09-16 |
| TWI303355B true TWI303355B (en) | 2008-11-21 |
Family
ID=34700523
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093140280A TWI303355B (en) | 2003-12-24 | 2004-12-23 | Lithographic apparatus, chuck system thereof and device manufacturing method |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7119884B2 (enExample) |
| EP (1) | EP1702241A2 (enExample) |
| JP (1) | JP4384181B2 (enExample) |
| KR (3) | KR100882893B1 (enExample) |
| CN (1) | CN100517074C (enExample) |
| TW (1) | TWI303355B (enExample) |
| WO (1) | WO2005064400A2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI770449B (zh) * | 2018-12-14 | 2022-07-11 | 荷蘭商Ａｓｍｌ荷蘭公司 | 載物台設備、檢測設備及真空設備 |
Families Citing this family (99)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100588124B1 (ko) | 2002-11-12 | 2006-06-09 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피장치 및 디바이스제조방법 |
| SG121818A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| US9482966B2 (en) | 2002-11-12 | 2016-11-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US10503084B2 (en) | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7372541B2 (en) | 2002-11-12 | 2008-05-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| DE10261775A1 (de) | 2002-12-20 | 2004-07-01 | Carl Zeiss Smt Ag | Vorrichtung zur optischen Vermessung eines Abbildungssystems |
| EP1598855B1 (en) | 2003-02-26 | 2015-04-22 | Nikon Corporation | Exposure apparatus and method, and method of producing apparatus |
| KR101345474B1 (ko) | 2003-03-25 | 2013-12-27 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| WO2004090956A1 (ja) | 2003-04-07 | 2004-10-21 | Nikon Corporation | 露光装置及びデバイス製造方法 |
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| EP2161621B1 (en) | 2003-04-11 | 2018-10-24 | Nikon Corporation | Cleanup method for optics in an immersion lithography apparatus, and corresponding immersion lithography apparatus |
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| TWI295414B (en) | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
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| EP2453465A3 (en) | 2003-05-28 | 2018-01-03 | Nikon Corporation | Exposure method, exposure apparatus, and method for producing a device |
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| KR101520591B1 (ko) | 2003-06-13 | 2015-05-14 | 가부시키가이샤 니콘 | 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법 |
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2003
- 2003-12-24 US US10/744,088 patent/US7119884B2/en not_active Expired - Fee Related
-
2004
- 2004-12-20 KR KR1020087007394A patent/KR100882893B1/ko not_active Expired - Fee Related
- 2004-12-20 KR KR1020087020956A patent/KR100950069B1/ko not_active Expired - Fee Related
- 2004-12-20 WO PCT/EP2004/014481 patent/WO2005064400A2/en not_active Ceased
- 2004-12-20 KR KR1020067012327A patent/KR100882892B1/ko not_active Expired - Fee Related
- 2004-12-20 CN CNB2004800389194A patent/CN100517074C/zh not_active Expired - Fee Related
- 2004-12-20 EP EP04804081A patent/EP1702241A2/en not_active Withdrawn
- 2004-12-20 JP JP2006546022A patent/JP4384181B2/ja not_active Expired - Fee Related
- 2004-12-23 TW TW093140280A patent/TWI303355B/zh not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI770449B (zh) * | 2018-12-14 | 2022-07-11 | 荷蘭商Ａｓｍｌ荷蘭公司 | 載物台設備、檢測設備及真空設備 |
| US11764030B2 (en) | 2018-12-14 | 2023-09-19 | Asml Netherlands B.V. | Stage apparatus suitable for electron beam inspection apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| US7119884B2 (en) | 2006-10-10 |
| EP1702241A2 (en) | 2006-09-20 |
| KR20080091268A (ko) | 2008-10-09 |
| JP4384181B2 (ja) | 2009-12-16 |
| KR100950069B1 (ko) | 2010-03-26 |
| JP2007515799A (ja) | 2007-06-14 |
| CN100517074C (zh) | 2009-07-22 |
| WO2005064400A3 (en) | 2006-03-09 |
| TW200530764A (en) | 2005-09-16 |
| CN1898611A (zh) | 2007-01-17 |
| KR20060103269A (ko) | 2006-09-28 |
| KR100882893B1 (ko) | 2009-02-10 |
| WO2005064400A2 (en) | 2005-07-14 |
| KR20080032015A (ko) | 2008-04-11 |
| US20050140962A1 (en) | 2005-06-30 |
| KR100882892B1 (ko) | 2009-02-10 |
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