KR100882893B1 - 리소그래피 장치 및 디바이스 제조 방법 - Google Patents

리소그래피 장치 및 디바이스 제조 방법 Download PDF

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Publication number
KR100882893B1
KR100882893B1 KR1020087007394A KR20087007394A KR100882893B1 KR 100882893 B1 KR100882893 B1 KR 100882893B1 KR 1020087007394 A KR1020087007394 A KR 1020087007394A KR 20087007394 A KR20087007394 A KR 20087007394A KR 100882893 B1 KR100882893 B1 KR 100882893B1
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South Korea
Prior art keywords
chuck
substrate
frame
delete delete
support
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Expired - Fee Related
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KR1020087007394A
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English (en)
Korean (ko)
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KR20080032015A (ko
Inventor
페터 슈미츠
파트리크 요한네스 코르넬루스 헨드리크 슈물더스
코엔 야코부스 요한네스 마리아 잘
헨리쿠스 헤어만 마리에 콕스
유스트 예뢴 오텐스
노우트 얀 길리센
예뢴 슈타레벨트
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에이에스엠엘 네델란즈 비.브이.
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Publication of KR20080032015A publication Critical patent/KR20080032015A/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020087007394A 2003-12-24 2004-12-20 리소그래피 장치 및 디바이스 제조 방법 Expired - Fee Related KR100882893B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/744,088 US7119884B2 (en) 2003-12-24 2003-12-24 Lithographic apparatus and device manufacturing method
US10/744,088 2003-12-24

Related Parent Applications (1)

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KR1020067012327A Division KR100882892B1 (ko) 2003-12-24 2004-12-20 리소그래피 장치 및 디바이스 제조 방법

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020087020956A Division KR100950069B1 (ko) 2003-12-24 2004-12-20 리소그래피 장치 및 디바이스 제조 방법

Publications (2)

Publication Number Publication Date
KR20080032015A KR20080032015A (ko) 2008-04-11
KR100882893B1 true KR100882893B1 (ko) 2009-02-10

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KR1020087007394A Expired - Fee Related KR100882893B1 (ko) 2003-12-24 2004-12-20 리소그래피 장치 및 디바이스 제조 방법
KR1020087020956A Expired - Fee Related KR100950069B1 (ko) 2003-12-24 2004-12-20 리소그래피 장치 및 디바이스 제조 방법
KR1020067012327A Expired - Fee Related KR100882892B1 (ko) 2003-12-24 2004-12-20 리소그래피 장치 및 디바이스 제조 방법

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020087020956A Expired - Fee Related KR100950069B1 (ko) 2003-12-24 2004-12-20 리소그래피 장치 및 디바이스 제조 방법
KR1020067012327A Expired - Fee Related KR100882892B1 (ko) 2003-12-24 2004-12-20 리소그래피 장치 및 디바이스 제조 방법

Country Status (7)

Country Link
US (1) US7119884B2 (enExample)
EP (1) EP1702241A2 (enExample)
JP (1) JP4384181B2 (enExample)
KR (3) KR100882893B1 (enExample)
CN (1) CN100517074C (enExample)
TW (1) TWI303355B (enExample)
WO (1) WO2005064400A2 (enExample)

Families Citing this family (100)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100588124B1 (ko) 2002-11-12 2006-06-09 에이에스엠엘 네델란즈 비.브이. 리소그래피장치 및 디바이스제조방법
SG121818A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10503084B2 (en) 2002-11-12 2019-12-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7372541B2 (en) 2002-11-12 2008-05-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE10261775A1 (de) 2002-12-20 2004-07-01 Carl Zeiss Smt Ag Vorrichtung zur optischen Vermessung eines Abbildungssystems
EP1598855B1 (en) 2003-02-26 2015-04-22 Nikon Corporation Exposure apparatus and method, and method of producing apparatus
KR101345474B1 (ko) 2003-03-25 2013-12-27 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
WO2004090956A1 (ja) 2003-04-07 2004-10-21 Nikon Corporation 露光装置及びデバイス製造方法
JP4488004B2 (ja) 2003-04-09 2010-06-23 株式会社ニコン 液浸リソグラフィ流体制御システム
CN1771463A (zh) 2003-04-10 2006-05-10 株式会社尼康 用于沉浸光刻装置收集液体的溢出通道
KR101323993B1 (ko) 2003-04-10 2013-10-30 가부시키가이샤 니콘 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
CN101061429B (zh) 2003-04-10 2015-02-04 株式会社尼康 包括用于沉浸光刻装置的真空清除的环境系统
SG139733A1 (en) 2003-04-11 2008-02-29 Nikon Corp Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly
WO2004092830A2 (en) 2003-04-11 2004-10-28 Nikon Corporation Liquid jet and recovery system for immersion lithography
EP2161621B1 (en) 2003-04-11 2018-10-24 Nikon Corporation Cleanup method for optics in an immersion lithography apparatus, and corresponding immersion lithography apparatus
KR101369582B1 (ko) 2003-04-17 2014-03-04 가부시키가이샤 니콘 액침 리소그래피에서 이용하기 위한 오토포커스 소자의 광학적 배열
TWI295414B (en) 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
WO2004102646A1 (ja) 2003-05-15 2004-11-25 Nikon Corporation 露光装置及びデバイス製造方法
TWI424470B (zh) 2003-05-23 2014-01-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
TWI614794B (zh) 2003-05-23 2018-02-11 Nikon Corp 曝光方法及曝光裝置以及元件製造方法
EP2453465A3 (en) 2003-05-28 2018-01-03 Nikon Corporation Exposure method, exposure apparatus, and method for producing a device
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1486827B1 (en) 2003-06-11 2011-11-02 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101520591B1 (ko) 2003-06-13 2015-05-14 가부시키가이샤 니콘 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법
TWI543235B (zh) 2003-06-19 2016-07-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
US7236232B2 (en) 2003-07-01 2007-06-26 Nikon Corporation Using isotopically specified fluids as optical elements
JP4697138B2 (ja) 2003-07-08 2011-06-08 株式会社ニコン 液浸リソグラフィ装置、液浸リソグラフィ方法、デバイス製造方法
KR101296501B1 (ko) 2003-07-09 2013-08-13 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
EP1643543B1 (en) 2003-07-09 2010-11-24 Nikon Corporation Exposure apparatus and method for manufacturing device
EP2264531B1 (en) 2003-07-09 2013-01-16 Nikon Corporation Exposure apparatus and device manufacturing method
EP1650787A4 (en) 2003-07-25 2007-09-19 Nikon Corp INVESTIGATION METHOD AND INVESTIGATION DEVICE FOR AN OPTICAL PROJECTION SYSTEM AND METHOD OF MANUFACTURING AN OPTICAL PROJECTION SYSTEM
EP1503244A1 (en) 2003-07-28 2005-02-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
CN104122760B (zh) 2003-07-28 2017-04-19 株式会社尼康 曝光装置、器件制造方法
US7779781B2 (en) 2003-07-31 2010-08-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI263859B (en) 2003-08-29 2006-10-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
SG145780A1 (en) 2003-08-29 2008-09-29 Nikon Corp Exposure apparatus and device fabricating method
KR20170070264A (ko) 2003-09-03 2017-06-21 가부시키가이샤 니콘 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
JP4444920B2 (ja) 2003-09-19 2010-03-31 株式会社ニコン 露光装置及びデバイス製造方法
EP1670043B1 (en) 2003-09-29 2013-02-27 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
JP2005136364A (ja) 2003-10-08 2005-05-26 Zao Nikon Co Ltd 基板搬送装置、露光装置、並びにデバイス製造方法
KR101111364B1 (ko) 2003-10-08 2012-02-27 가부시키가이샤 자오 니콘 기판 반송 장치 및 기판 반송 방법, 노광 장치 및 노광방법, 디바이스 제조 방법
WO2005036623A1 (ja) 2003-10-08 2005-04-21 Zao Nikon Co., Ltd. 基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造方法
TW201738932A (zh) 2003-10-09 2017-11-01 Nippon Kogaku Kk 曝光裝置及曝光方法、元件製造方法
US7411653B2 (en) 2003-10-28 2008-08-12 Asml Netherlands B.V. Lithographic apparatus
JP4295712B2 (ja) 2003-11-14 2009-07-15 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置及び装置製造方法
EP3139214B1 (en) 2003-12-03 2019-01-30 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
DE602004030481D1 (de) 2003-12-15 2011-01-20 Nippon Kogaku Kk Bühnensystem, belichtungsvorrichtung und belichtungsverfahren
EP1706793B1 (en) 2004-01-20 2010-03-03 Carl Zeiss SMT AG Exposure apparatus and measuring device for a projection lens
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
WO2005076321A1 (ja) 2004-02-03 2005-08-18 Nikon Corporation 露光装置及びデバイス製造方法
JP4411100B2 (ja) * 2004-02-18 2010-02-10 キヤノン株式会社 露光装置
JP4525676B2 (ja) 2004-03-25 2010-08-18 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
US8054448B2 (en) 2004-05-04 2011-11-08 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US7616383B2 (en) 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR20070032664A (ko) * 2004-05-28 2007-03-22 보드 오브 리전츠, 더 유니버시티 오브 텍사스 시스템 기판 지지 시스템 및 방법
WO2005119368A2 (en) 2004-06-04 2005-12-15 Carl Zeiss Smt Ag System for measuring the image quality of an optical imaging system
WO2005122218A1 (ja) 2004-06-09 2005-12-22 Nikon Corporation 露光装置及びデバイス製造方法
KR100534140B1 (ko) * 2004-06-23 2005-12-08 삼성전자주식회사 스테이지장치
US7463330B2 (en) 2004-07-07 2008-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101342330B1 (ko) 2004-07-12 2013-12-16 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
JP4983257B2 (ja) 2004-08-18 2012-07-25 株式会社ニコン 露光装置、デバイス製造方法、計測部材、及び計測方法
US7701550B2 (en) 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7397533B2 (en) 2004-12-07 2008-07-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7880860B2 (en) 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR20160135859A (ko) 2005-01-31 2016-11-28 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US8692973B2 (en) 2005-01-31 2014-04-08 Nikon Corporation Exposure apparatus and method for producing device
US7282701B2 (en) 2005-02-28 2007-10-16 Asml Netherlands B.V. Sensor for use in a lithographic apparatus
USRE43576E1 (en) 2005-04-08 2012-08-14 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
US7755742B2 (en) * 2005-10-11 2010-07-13 Asml Netherlands B.V. Lithographic apparatus with mounted sensor
US8681314B2 (en) * 2005-10-24 2014-03-25 Nikon Corporation Stage device and coordinate correction method for the same, exposure apparatus, and device manufacturing method
US7564536B2 (en) 2005-11-08 2009-07-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7649611B2 (en) 2005-12-30 2010-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE102006021797A1 (de) 2006-05-09 2007-11-15 Carl Zeiss Smt Ag Optische Abbildungseinrichtung mit thermischer Dämpfung
US8215946B2 (en) * 2006-05-18 2012-07-10 Molecular Imprints, Inc. Imprint lithography system and method
US7675607B2 (en) * 2006-07-14 2010-03-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8236579B2 (en) * 2007-03-14 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and systems for lithography alignment
US8237911B2 (en) 2007-03-15 2012-08-07 Nikon Corporation Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
US8687166B2 (en) * 2007-05-24 2014-04-01 Asml Netherlands B.V. Lithographic apparatus having an encoder position sensor system
DE102007039630B3 (de) * 2007-08-22 2009-01-15 Ullrich Gmbh Verfahren und Vorrichtung zum Prüfen eines Prüfobjekts
NL1036735A1 (nl) 2008-04-10 2009-10-13 Asml Holding Nv Shear-layer chuck for lithographic apparatus.
US9176393B2 (en) 2008-05-28 2015-11-03 Asml Netherlands B.V. Lithographic apparatus and a method of operating the apparatus
NL2003470A (en) * 2008-10-07 2010-04-08 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
EP2381310B1 (en) 2010-04-22 2015-05-06 ASML Netherlands BV Fluid handling structure and lithographic apparatus
WO2012084675A1 (en) 2010-12-20 2012-06-28 Carl Zeiss Smt Gmbh Arrangement for mounting an optical element
JPWO2012115002A1 (ja) * 2011-02-22 2014-07-07 株式会社ニコン 保持装置、露光装置、及びデバイスの製造方法
KR20140030259A (ko) 2011-06-03 2014-03-11 텔 넥스 인코포레이티드 병렬식 단일 기판 처리 시스템
JP5694885B2 (ja) * 2011-08-30 2015-04-01 株式会社日立ハイテクノロジーズ Ｚステージ装置及び荷電粒子線装置
DE102011114875B4 (de) * 2011-09-30 2016-02-11 Carl Zeiss Smt Gmbh Substrathalter
WO2013178438A1 (en) 2012-05-29 2013-12-05 Asml Netherlands B.V. Object holder and lithographic apparatus
CN103325722B (zh) * 2013-05-24 2016-04-20 沈阳拓荆科技有限公司 晶圆输送机构及使用方法
USRE49142E1 (en) 2014-08-06 2022-07-19 Asml Netherlands B.V. Lithographic apparatus and an object positioning system
KR101907728B1 (ko) * 2015-01-22 2018-10-15 한국표준과학연구원 증착장치의 척 가공방법 및 가공장치
WO2016148855A1 (en) * 2015-03-19 2016-09-22 Applied Materials, Inc. Method and apparatus for reducing radiation induced change in semiconductor structures
US9805906B1 (en) * 2016-09-20 2017-10-31 Applied Materials Israel, Ltd. Mirror support module, a kit and a scanning electron microscope
US9817208B1 (en) * 2016-09-20 2017-11-14 Applied Materials Israel Ltd. Integrated chuck
KR102678615B1 (ko) * 2017-09-15 2024-06-25 에이에스엠엘 홀딩 엔.브이. 대상물로부터 오염을 제거하는 연마 툴 및 방법
EP3667696A1 (en) * 2018-12-14 2020-06-17 ASML Netherlands B.V. Stage apparatus suitable for electron beam inspection apparatus
EP3869272A1 (en) * 2020-02-21 2021-08-25 ASML Netherlands B.V. Substrate table and method of handling a substrate
EP3915700A1 (en) * 2020-05-28 2021-12-01 Trumpf Sisma S.r.l. Machine for manufacturing three-dimensional components

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6653639B1 (en) * 2000-10-17 2003-11-25 Nikon Corporation Chuck for mounting reticle to a reticle stage

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4391494A (en) * 1981-05-15 1983-07-05 General Signal Corporation Apparatus for projecting a series of images onto dies of a semiconductor wafer
US4539695A (en) * 1984-01-06 1985-09-03 The Perkin-Elmer Corporation X-Ray lithography system
US4506184A (en) * 1984-01-10 1985-03-19 Varian Associates, Inc. Deformable chuck driven by piezoelectric means
US4737824A (en) * 1984-10-16 1988-04-12 Canon Kabushiki Kaisha Surface shape controlling device
JP3160049B2 (ja) 1992-03-12 2001-04-23 株式会社日立製作所 位置決め装置
WO1997029403A1 (en) 1996-02-08 1997-08-14 Megapanel Corporation Method and apparatus for transferring a reticle pattern to a large area substrate by scanning
JPH09289155A (ja) * 1996-04-19 1997-11-04 Nikon Corp 走査型露光装置
SE9704193D0 (sv) * 1997-11-14 1997-11-14 Micronic Laser Systems Ab Device and method for flat holding of a substrate in microlithography
JP3554186B2 (ja) * 1998-04-08 2004-08-18 キヤノン株式会社 露光装置、デバイス製造方法および反力受け方法
US6257564B1 (en) * 1998-05-15 2001-07-10 Applied Materials, Inc Vacuum chuck having vacuum-nipples wafer support
WO2001011431A2 (en) 1999-08-06 2001-02-15 Applied Materials, Inc. Method and apparatus of holding semiconductor wafers for lithography and other wafer processes
US6353271B1 (en) * 1999-10-29 2002-03-05 Euv, Llc Extreme-UV scanning wafer and reticle stages
US6888620B2 (en) * 2001-11-29 2005-05-03 Nikon Corporation System and method for holding a device with minimal deformation
US6756751B2 (en) * 2002-02-15 2004-06-29 Active Precision, Inc. Multiple degree of freedom substrate manipulator
US6784978B2 (en) * 2002-03-12 2004-08-31 Asml Holding N.V. Method, system, and apparatus for management of reaction loads in a lithography system
US6844635B2 (en) * 2002-05-24 2005-01-18 Dover Instrument Corporation Reaction force transfer system

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6653639B1 (en) * 2000-10-17 2003-11-25 Nikon Corporation Chuck for mounting reticle to a reticle stage

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US7119884B2 (en) 2006-10-10
EP1702241A2 (en) 2006-09-20
KR20080091268A (ko) 2008-10-09
JP4384181B2 (ja) 2009-12-16
KR100950069B1 (ko) 2010-03-26
JP2007515799A (ja) 2007-06-14
CN100517074C (zh) 2009-07-22
WO2005064400A3 (en) 2006-03-09
TW200530764A (en) 2005-09-16
CN1898611A (zh) 2007-01-17
KR20060103269A (ko) 2006-09-28
TWI303355B (en) 2008-11-21
WO2005064400A2 (en) 2005-07-14
KR20080032015A (ko) 2008-04-11
US20050140962A1 (en) 2005-06-30
KR100882892B1 (ko) 2009-02-10

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