TWI302365B - - Google Patents
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- Publication number
- TWI302365B TWI302365B TW095120498A TW95120498A TWI302365B TW I302365 B TWI302365 B TW I302365B TW 095120498 A TW095120498 A TW 095120498A TW 95120498 A TW95120498 A TW 95120498A TW I302365 B TWI302365 B TW I302365B
- Authority
- TW
- Taiwan
- Prior art keywords
- memory device
- floating gate
- semiconductor memory
- gate
- semiconductor layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims description 170
- 238000007667 floating Methods 0.000 claims description 95
- 239000000758 substrate Substances 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 34
- 239000004575 stone Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 9
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 6
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 87
- 238000009792 diffusion process Methods 0.000 description 28
- 230000008878 coupling Effects 0.000 description 23
- 238000010168 coupling process Methods 0.000 description 23
- 238000005859 coupling reaction Methods 0.000 description 23
- 108091006146 Channels Proteins 0.000 description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 12
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 11
- 229910001936 tantalum oxide Inorganic materials 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 4
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical group 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 230000008719 thickening Effects 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 206010011224 Cough Diseases 0.000 description 1
- 240000004282 Grewia occidentalis Species 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 101150089280 cip2 gene Proteins 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 150000002291 germanium compounds Chemical class 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 210000000936 intestine Anatomy 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- -1 phosphorus (germanium) ions Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000035807 sensation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/031—Manufacture or treatment of data-storage electrodes
- H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005171361 | 2005-06-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200721395A TW200721395A (en) | 2007-06-01 |
| TWI302365B true TWI302365B (https=) | 2008-10-21 |
Family
ID=37498358
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095120498A TW200721395A (en) | 2005-06-10 | 2006-06-09 | Nonvolatile semiconductor storage device and method for manufacturing the same |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP4909894B2 (https=) |
| TW (1) | TW200721395A (https=) |
| WO (1) | WO2006132158A1 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI697901B (zh) * | 2017-03-16 | 2020-07-01 | 日商東芝記憶體股份有限公司 | 半導體記憶體 |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8223548B2 (en) | 2007-05-24 | 2012-07-17 | National Institute Of Advanced Industrial Science And Technology | Memory device with reduced programming voltage method of reduction of programming voltage and method of reading such memory device |
| JP5388600B2 (ja) | 2009-01-22 | 2014-01-15 | 株式会社東芝 | 不揮発性半導体記憶装置の製造方法 |
| JP5737525B2 (ja) * | 2010-05-14 | 2015-06-17 | 国立大学法人東北大学 | 半導体集積回路とその製造方法 |
| US8803214B2 (en) | 2010-06-28 | 2014-08-12 | Micron Technology, Inc. | Three dimensional memory and methods of forming the same |
| JP5209677B2 (ja) | 2010-07-29 | 2013-06-12 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 不揮発性半導体メモリトランジスタ、および、不揮発性半導体メモリの製造方法 |
| US8759895B2 (en) | 2011-02-25 | 2014-06-24 | Micron Technology, Inc. | Semiconductor charge storage apparatus and methods |
| US9041092B2 (en) | 2012-09-07 | 2015-05-26 | Unisantis Electronics Singapore Pte. Ltd. | Semiconductor device and method for producing the same |
| WO2014038058A1 (ja) * | 2012-09-07 | 2014-03-13 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置、および、半導体装置の製造方法 |
| US8946807B2 (en) | 2013-01-24 | 2015-02-03 | Micron Technology, Inc. | 3D memory |
| US9184175B2 (en) | 2013-03-15 | 2015-11-10 | Micron Technology, Inc. | Floating gate memory cells in vertical memory |
| US9276011B2 (en) | 2013-03-15 | 2016-03-01 | Micron Technology, Inc. | Cell pillar structures and integrated flows |
| US9064970B2 (en) | 2013-03-15 | 2015-06-23 | Micron Technology, Inc. | Memory including blocking dielectric in etch stop tier |
| US9437604B2 (en) | 2013-11-01 | 2016-09-06 | Micron Technology, Inc. | Methods and apparatuses having strings of memory cells including a metal source |
| WO2016139725A1 (ja) * | 2015-03-02 | 2016-09-09 | 株式会社 東芝 | 半導体記憶装置及びその製造方法 |
| TWI608596B (zh) * | 2016-08-22 | 2017-12-11 | 旺宏電子股份有限公司 | 具有可交換閘極/通道之電晶體的記憶體元件與其製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0214582A (ja) * | 1988-06-30 | 1990-01-18 | Mitsubishi Electric Corp | 半導体記憶装置 |
| DE19600307C1 (de) * | 1996-01-05 | 1998-01-08 | Siemens Ag | Hochintegrierter Halbleiterspeicher und Verfahren zur Herstellung des Halbleiterspeichers |
| JP3425853B2 (ja) * | 1997-08-29 | 2003-07-14 | Ｎｅｃエレクトロニクス株式会社 | 不揮発性半導体記憶装置 |
| JP4332278B2 (ja) * | 2000-03-10 | 2009-09-16 | Ｏｋｉセミコンダクタ株式会社 | 不揮発性メモリの製造方法 |
| JP2005311251A (ja) * | 2004-04-26 | 2005-11-04 | Fujio Masuoka | 半導体記憶装置及びその製造方法、それを備えてなる携帯電子機器 |
-
2006
- 2006-06-02 WO PCT/JP2006/311122 patent/WO2006132158A1/ja not_active Ceased
- 2006-06-02 JP JP2007520081A patent/JP4909894B2/ja not_active Expired - Fee Related
- 2006-06-09 TW TW095120498A patent/TW200721395A/zh unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI697901B (zh) * | 2017-03-16 | 2020-07-01 | 日商東芝記憶體股份有限公司 | 半導體記憶體 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4909894B2 (ja) | 2012-04-04 |
| TW200721395A (en) | 2007-06-01 |
| WO2006132158A1 (ja) | 2006-12-14 |
| JPWO2006132158A1 (ja) | 2009-01-08 |
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