JP4909894B2 - 不揮発性半導体記憶装置およびその製造方法 - Google Patents

不揮発性半導体記憶装置およびその製造方法 Download PDF

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Publication number
JP4909894B2
JP4909894B2 JP2007520081A JP2007520081A JP4909894B2 JP 4909894 B2 JP4909894 B2 JP 4909894B2 JP 2007520081 A JP2007520081 A JP 2007520081A JP 2007520081 A JP2007520081 A JP 2007520081A JP 4909894 B2 JP4909894 B2 JP 4909894B2
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Japan
Prior art keywords
floating gate
memory device
semiconductor memory
semiconductor layer
gate
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Expired - Fee Related
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JP2007520081A
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Japanese (ja)
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JPWO2006132158A1 (ja
Inventor
富士雄 舛岡
卓也 大場
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Sharp Corp
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Sharp Corp
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Priority to JP2007520081A priority Critical patent/JP4909894B2/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2007520081A 2005-06-10 2006-06-02 不揮発性半導体記憶装置およびその製造方法 Expired - Fee Related JP4909894B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007520081A JP4909894B2 (ja) 2005-06-10 2006-06-02 不揮発性半導体記憶装置およびその製造方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2005171361 2005-06-10
JP2005171361 2005-06-10
PCT/JP2006/311122 WO2006132158A1 (ja) 2005-06-10 2006-06-02 不揮発性半導体記憶装置およびその製造方法
JP2007520081A JP4909894B2 (ja) 2005-06-10 2006-06-02 不揮発性半導体記憶装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPWO2006132158A1 JPWO2006132158A1 (ja) 2009-01-08
JP4909894B2 true JP4909894B2 (ja) 2012-04-04

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JP2007520081A Expired - Fee Related JP4909894B2 (ja) 2005-06-10 2006-06-02 不揮発性半導体記憶装置およびその製造方法

Country Status (3)

Country Link
JP (1) JP4909894B2 (https=)
TW (1) TW200721395A (https=)
WO (1) WO2006132158A1 (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8223548B2 (en) 2007-05-24 2012-07-17 National Institute Of Advanced Industrial Science And Technology Memory device with reduced programming voltage method of reduction of programming voltage and method of reading such memory device
JP5388600B2 (ja) 2009-01-22 2014-01-15 株式会社東芝 不揮発性半導体記憶装置の製造方法
JP5737525B2 (ja) * 2010-05-14 2015-06-17 国立大学法人東北大学 半導体集積回路とその製造方法
US8803214B2 (en) 2010-06-28 2014-08-12 Micron Technology, Inc. Three dimensional memory and methods of forming the same
JP5209677B2 (ja) 2010-07-29 2013-06-12 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 不揮発性半導体メモリトランジスタ、および、不揮発性半導体メモリの製造方法
US8759895B2 (en) 2011-02-25 2014-06-24 Micron Technology, Inc. Semiconductor charge storage apparatus and methods
US9041092B2 (en) 2012-09-07 2015-05-26 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device and method for producing the same
WO2014038058A1 (ja) * 2012-09-07 2014-03-13 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置、および、半導体装置の製造方法
US8946807B2 (en) 2013-01-24 2015-02-03 Micron Technology, Inc. 3D memory
US9184175B2 (en) 2013-03-15 2015-11-10 Micron Technology, Inc. Floating gate memory cells in vertical memory
US9276011B2 (en) 2013-03-15 2016-03-01 Micron Technology, Inc. Cell pillar structures and integrated flows
US9064970B2 (en) 2013-03-15 2015-06-23 Micron Technology, Inc. Memory including blocking dielectric in etch stop tier
US9437604B2 (en) 2013-11-01 2016-09-06 Micron Technology, Inc. Methods and apparatuses having strings of memory cells including a metal source
WO2016139725A1 (ja) * 2015-03-02 2016-09-09 株式会社 東芝 半導体記憶装置及びその製造方法
TWI608596B (zh) * 2016-08-22 2017-12-11 旺宏電子股份有限公司 具有可交換閘極/通道之電晶體的記憶體元件與其製造方法
US10312239B2 (en) * 2017-03-16 2019-06-04 Toshiba Memory Corporation Semiconductor memory including semiconductor oxie

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0214582A (ja) * 1988-06-30 1990-01-18 Mitsubishi Electric Corp 半導体記憶装置
JPH1174382A (ja) * 1997-08-29 1999-03-16 Nec Corp 不揮発性半導体記憶装置
JP2001257276A (ja) * 2000-03-10 2001-09-21 Oki Electric Ind Co Ltd 不揮発性メモリ

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19600307C1 (de) * 1996-01-05 1998-01-08 Siemens Ag Hochintegrierter Halbleiterspeicher und Verfahren zur Herstellung des Halbleiterspeichers
JP2005311251A (ja) * 2004-04-26 2005-11-04 Fujio Masuoka 半導体記憶装置及びその製造方法、それを備えてなる携帯電子機器

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0214582A (ja) * 1988-06-30 1990-01-18 Mitsubishi Electric Corp 半導体記憶装置
JPH1174382A (ja) * 1997-08-29 1999-03-16 Nec Corp 不揮発性半導体記憶装置
JP2001257276A (ja) * 2000-03-10 2001-09-21 Oki Electric Ind Co Ltd 不揮発性メモリ

Also Published As

Publication number Publication date
TW200721395A (en) 2007-06-01
TWI302365B (https=) 2008-10-21
WO2006132158A1 (ja) 2006-12-14
JPWO2006132158A1 (ja) 2009-01-08

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