TW200721395A - Nonvolatile semiconductor storage device and method for manufacturing the same - Google Patents

Nonvolatile semiconductor storage device and method for manufacturing the same

Info

Publication number
TW200721395A
TW200721395A TW095120498A TW95120498A TW200721395A TW 200721395 A TW200721395 A TW 200721395A TW 095120498 A TW095120498 A TW 095120498A TW 95120498 A TW95120498 A TW 95120498A TW 200721395 A TW200721395 A TW 200721395A
Authority
TW
Taiwan
Prior art keywords
storage device
semiconductor storage
floating gate
control gate
gate
Prior art date
Application number
TW095120498A
Other languages
English (en)
Other versions
TWI302365B (zh
Inventor
Fujio Masuoka
Takuya Ooba
Original Assignee
Sharp Kk
Fujio Masuoka
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk, Fujio Masuoka filed Critical Sharp Kk
Publication of TW200721395A publication Critical patent/TW200721395A/zh
Application granted granted Critical
Publication of TWI302365B publication Critical patent/TWI302365B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
TW095120498A 2005-06-10 2006-06-09 Nonvolatile semiconductor storage device and method for manufacturing the same TW200721395A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005171361 2005-06-10

Publications (2)

Publication Number Publication Date
TW200721395A true TW200721395A (en) 2007-06-01
TWI302365B TWI302365B (zh) 2008-10-21

Family

ID=37498358

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095120498A TW200721395A (en) 2005-06-10 2006-06-09 Nonvolatile semiconductor storage device and method for manufacturing the same

Country Status (3)

Country Link
JP (1) JP4909894B2 (zh)
TW (1) TW200721395A (zh)
WO (1) WO2006132158A1 (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9466607B2 (en) 2010-05-14 2016-10-11 Tohoku University Semiconductor integrated circuit and method of producing the same
TWI608596B (zh) * 2016-08-22 2017-12-11 旺宏電子股份有限公司 具有可交換閘極/通道之電晶體的記憶體元件與其製造方法
TWI697901B (zh) * 2017-03-16 2020-07-01 日商東芝記憶體股份有限公司 半導體記憶體

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8223548B2 (en) 2007-05-24 2012-07-17 National Institute Of Advanced Industrial Science And Technology Memory device with reduced programming voltage method of reduction of programming voltage and method of reading such memory device
JP5388600B2 (ja) 2009-01-22 2014-01-15 株式会社東芝 不揮発性半導体記憶装置の製造方法
US8803214B2 (en) 2010-06-28 2014-08-12 Micron Technology, Inc. Three dimensional memory and methods of forming the same
JP5209677B2 (ja) 2010-07-29 2013-06-12 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 不揮発性半導体メモリトランジスタ、および、不揮発性半導体メモリの製造方法
US8759895B2 (en) 2011-02-25 2014-06-24 Micron Technology, Inc. Semiconductor charge storage apparatus and methods
US9041092B2 (en) 2012-09-07 2015-05-26 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device and method for producing the same
JP5612236B2 (ja) * 2012-09-07 2014-10-22 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置、および、半導体装置の製造方法
US8946807B2 (en) 2013-01-24 2015-02-03 Micron Technology, Inc. 3D memory
US9276011B2 (en) 2013-03-15 2016-03-01 Micron Technology, Inc. Cell pillar structures and integrated flows
US9184175B2 (en) * 2013-03-15 2015-11-10 Micron Technology, Inc. Floating gate memory cells in vertical memory
US9064970B2 (en) 2013-03-15 2015-06-23 Micron Technology, Inc. Memory including blocking dielectric in etch stop tier
US9437604B2 (en) 2013-11-01 2016-09-06 Micron Technology, Inc. Methods and apparatuses having strings of memory cells including a metal source
WO2016139725A1 (ja) * 2015-03-02 2016-09-09 株式会社 東芝 半導体記憶装置及びその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0214582A (ja) * 1988-06-30 1990-01-18 Mitsubishi Electric Corp 半導体記憶装置
DE19600307C1 (de) * 1996-01-05 1998-01-08 Siemens Ag Hochintegrierter Halbleiterspeicher und Verfahren zur Herstellung des Halbleiterspeichers
JP3425853B2 (ja) * 1997-08-29 2003-07-14 Ｎｅｃエレクトロニクス株式会社 不揮発性半導体記憶装置
JP4332278B2 (ja) * 2000-03-10 2009-09-16 Ｏｋｉセミコンダクタ株式会社 不揮発性メモリの製造方法
JP2005311251A (ja) * 2004-04-26 2005-11-04 Fujio Masuoka 半導体記憶装置及びその製造方法、それを備えてなる携帯電子機器

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9466607B2 (en) 2010-05-14 2016-10-11 Tohoku University Semiconductor integrated circuit and method of producing the same
TWI566382B (zh) * 2010-05-14 2017-01-11 國立大學法人東北大學 半導體積體電路及其製造方法
TWI608596B (zh) * 2016-08-22 2017-12-11 旺宏電子股份有限公司 具有可交換閘極/通道之電晶體的記憶體元件與其製造方法
TWI697901B (zh) * 2017-03-16 2020-07-01 日商東芝記憶體股份有限公司 半導體記憶體

Also Published As

Publication number Publication date
WO2006132158A1 (ja) 2006-12-14
JPWO2006132158A1 (ja) 2009-01-08
TWI302365B (zh) 2008-10-21
JP4909894B2 (ja) 2012-04-04

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