Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D30/00—Field-effect transistors [FET]
  • H10D30/60—Insulated-gate field-effect transistors [IGFET]
  • H10D30/68—Floating-gate IGFETs
  • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D30/00—Field-effect transistors [FET]
  • H10D30/01—Manufacture or treatment
  • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
  • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D64/00—Electrodes of devices having potential barriers
  • H10D64/01—Manufacture or treatment
  • H10D64/031—Manufacture or treatment of data-storage electrodes
  • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures

Definitions

• Nonvolatile semiconductor memory device and manufacturing method thereof are nonvolatile semiconductor memory devices and manufacturing method thereof.
• the present invention relates to a nonvolatile semiconductor memory device and a manufacturing method thereof, and more particularly to a nonvolatile semiconductor memory device using a memory transistor including a floating gate and a control gate and a manufacturing method thereof.
• a MOS transistor has a floating gate and a control gate in a gate portion, and uses a tunnel current to inject charges into and release charges from the floating gate. Structural devices are known.
• the difference in threshold voltage due to the difference in charge accumulation state of the floating gate is stored as data “0” and “1”.
• the source diffusion layer is grounded and a positive high voltage is applied to the drain diffusion layer and the control gate.
• a positive high voltage is applied to the drain diffusion layer and the control gate.
• high-energy electrons that can exceed the energy barrier to the oxide film, that is, hot electrons are generated, and these electrons are generated in the silicon oxide film. It is pulled by the high voltage of the control gate across the barrier and injected into the floating gate. By this electron injection, the threshold voltage of the memory cell moves in the positive direction.
• the control gate is grounded, and a positive high voltage is applied to either the source / drain diffusion layer or the substrate. At this time, electrons are emitted from the floating gate to the substrate side by the tunnel current. By this electron emission, the threshold voltage of the memory cell moves in the negative direction.
• the gate insulating film between them is made thin or the dielectric constant is increased or the opposing area between the floating gate and the control gate Must be increased.
• reducing the gate insulating film has a limit in reliability.
• the semiconductor substrate is separated by a lattice-like groove, a plurality of columnar semiconductor layers are arranged in a matrix, and a memory transistor is configured using the sidewalls of the columnar semiconductor layers.
• EEPROMs have been proposed (for example, Non-Patent Document 1). With this configuration, the capacitance between the floating gate and the control gate is sufficiently large with a small footprint.
• the drain diffusion layer connected to the bit line of each memory cell is formed on the upper surface of the columnar semiconductor layer, and is electrically completely insulated by the groove.
• the element isolation region can be reduced, and the memory cell size can be reduced. Therefore, it is possible to obtain a large-capacity EEPROM that integrates memory cells having excellent writing and erasing efficiencies.
• Non-Patent Document 1 Fumihiko Hayashi and James D. Hummer, "A Self-Aligned Split-Gate Flash EEPROM Cell with 3-D Pillar Structure ", 1999 Symposium on VSLI Technology, Session 7A, T7A— 4, Kyoto, Japan
• FIG. 17 showing the structure described in Non-Patent Document 1
• the floating gate and the control gate are arranged. What is necessary is just to enlarge the capacity between the heads. To that end, it is only necessary to increase the thickness of the floating gate. If the thickness of the floating gate is increased, the capacitance between the semiconductor layer under the floating gate and the floating gate also increases, resulting in a decrease in the coupling ratio. Resulting in.
• an object of the present invention is to increase the coupling ratio without increasing the capacitance between the semiconductor layer and the floating gate.
• the present invention relates to a floating gate that includes a columnar semiconductor layer on a substrate and is arranged in parallel to a side surface of the columnar semiconductor layer.
• control gate is formed so as to cover the opposite surface and the upper side of the floating gate facing the columnar semiconductor layer, thereby increasing the coupling ratio
• control gate is formed so as to cover the opposite side of the floating gate facing the columnar semiconductor layer and the lower part, so that the semiconductor layer under the floating gate depends on the floating gate thickness. Eliminating the capacitance between the floating gate and reducing the coupling ratio without increasing the capacitance between the semiconductor layer and the floating gate; or
• control gate is formed so as to cover the upper surface and the opposite surface opposite to the side facing the columnar semiconductor layer of the floating gate, the capacitance between the floating gate and the control gate is increased.
• a columnar semiconductor layer is provided on a substrate
• the floating gate is arranged in parallel to the side surface of the columnar semiconductor layer,
• the control gate is formed through an insulating film so as to cover an opposite surface opposite to the side facing the columnar semiconductor layer of the floating gate and at least one other surface adjacent thereto.
• a nonvolatile semiconductor memory device is provided.
• the control gate is formed so as to cover the above-mentioned facing surface of the floating gate and the upper part and / or the lower part thereof, so that the control gate does not increase the capacitance between the semiconductor layer and the floating gate. It is possible to increase only the capacitance between the floating gate and the floating gate, and the coupling ratio can be made larger than that of the conventional SGT flash memory. Therefore, the write characteristics are improved, and an ideal sub-threshold swing S can be realized.
• FIG. 1 is a schematic process cross-sectional view of a nonvolatile semiconductor memory device according to Example 1 of the present invention.
• FIG. 2 is a schematic process cross-sectional view of the nonvolatile semiconductor memory device according to the example 1 of the invention.
• FIG. 3 is a schematic cross-sectional process diagram of the nonvolatile semiconductor memory device according to the example 1 of the invention.
• FIG. 4a is a schematic process cross-sectional view of the nonvolatile semiconductor memory device according to Example 1 of the present invention.
• FIG. 4b is a schematic cross-sectional process diagram of the nonvolatile semiconductor memory device according to the example 1 of the invention.
• FIG. 4c is a schematic process cross-sectional view of the nonvolatile semiconductor memory device according to Example 1 of the present invention.
• FIG. 5a is a schematic process cross-sectional view of the nonvolatile semiconductor memory device according to Example 1 of the present invention.
• FIG. 5b is a schematic process cross-sectional view of the nonvolatile semiconductor memory device according to Example 1 of the present invention.
• FIG. 6a is a schematic process cross-sectional view of the nonvolatile semiconductor memory device according to the example 1 of the invention.
• FIG. 6b is a schematic cross-sectional process diagram of the nonvolatile semiconductor memory device according to the example 1 of the invention.
• FIG. 6c is a schematic process sectional view of the nonvolatile semiconductor memory device according to Example 1 of the present invention.
• FIG. 7 is a schematic cross-sectional process diagram of the nonvolatile semiconductor memory device according to the example 1 of the invention.
• FIG. 8 is a schematic process cross-sectional view of the nonvolatile semiconductor memory device according to Example 1 of the present invention.
• FIG. 9a is a schematic cross-sectional process diagram of the nonvolatile semiconductor memory device according to the example 1 of the invention.
• FIG. 9b is a schematic cross-sectional process diagram of the nonvolatile semiconductor memory device according to the example 1 of the invention.
• FIG. 9c is a schematic process cross-sectional view of the nonvolatile semiconductor memory device according to Example 1 of the present invention.
• 10a A schematic process cross-sectional view of the nonvolatile semiconductor memory device according to the example 1 of the invention.
• FIG. 10b is a cross-sectional view of the nonvolatile semiconductor memory device in accordance with Example 1 of the present invention.
• FIG. 11 is a cross-sectional view of a nonvolatile semiconductor memory device according to Example 2 of the present invention.
• FIG. 12 is a cross-sectional view of a nonvolatile semiconductor memory device according to Example 3 of the present invention.
• FIG. 13 is a cross-sectional view of a nonvolatile semiconductor memory device according to Example 4 of the present invention.
• FIG. 14 is a cross-sectional view of a nonvolatile semiconductor memory device according to Example 5 of the present invention.
• FIG. 15 is a cross-sectional view of a nonvolatile semiconductor memory device in accordance with Example 6 of the present invention.
• FIG. 16 is a cross-sectional view of a nonvolatile semiconductor memory device in accordance with Example 7 of the present invention.
• FIG. 17 is a cross-sectional view of a conventional nonvolatile semiconductor memory device.
• FIG. 18 is a diagram for explaining the coupling ratio of the prior art.
• FIG. 19 is a diagram for explaining the coupling ratio of the prior art.
• FIG. 20 is a diagram for explaining the coupling ratio of the prior art.
• FIG. 21 is a diagram for explaining a coupling ratio according to the technique of the present invention.
• FIG. 22 is a diagram for explaining a coupling ratio according to the technique of the present invention.
• FIG. 23 is a diagram for explaining a coupling ratio of the technique of the present invention.
• FIG. 24 is a diagram for explaining the coupling ratio of the technique of the present invention.
• FIG. 25 is a diagram for explaining the coupling ratio of the technique of the present invention.
• FIG. 26 is a diagram comparing the coupling ratios of a conventional semiconductor device and a semiconductor memory device according to the present invention.
• FIG. 27 is a diagram comparing the coupling ratios of a conventional semiconductor device and a semiconductor memory device according to the present invention.
• FIG. 28 is a diagram comparing the coupling ratios of a conventional semiconductor device and a semiconductor memory device according to the present invention.
• FIG. 29 is a diagram comparing the coupling ratios of a semiconductor device according to the prior art and a semiconductor memory device according to the present invention.
• Second semiconductor layer Source diffusion layer, n-type
• second semiconductor layer drain diffusion layer, n-type
• the columnar semiconductor layer is provided on the substrate, the floating gate is disposed in parallel to the side surface of the columnar semiconductor layer, and the control gate is provided on the columnar semiconductor layer of the floating gate.
• a non-volatile semiconductor memory device formed so as to cover the opposite surface opposite to the facing surface and the upper, lower, or upper and lower portions of the adjacent floating gate in the width direction.
• the semiconductor substrate that can be used in the present invention is not particularly limited, and any known substrate can be used.
• an elemental semiconductor such as silicon or germanium
• a Balta substrate made of a compound semiconductor such as silicon germanium, GaAs, InGaAs, ZnSe, or GaN may be used.
• the semiconductor layer on the surface has a semiconductor layer on various substrates such as an SOI (Silicon on Insulator) substrate, an SOS (Silicon on Sapphire) substrate, or a multilayer SOI substrate, and on a glass or plastic substrate. And the like. Of these, a silicon substrate or an SOI substrate having a silicon layer formed on the surface is preferable.
• the semiconductor substrate has a p-type or n-type first conductivity type.
• the columnar semiconductor layer formed on the substrate may have the same or different material force as the material constituting the substrate.
• the same material force it is more preferable that the same material force be used, and the silicon force is preferable.
• the shape of the columnar semiconductor layer is not particularly limited, and may be a cylinder or a prism (triangular, quadrangular, or polygonal). Various shapes such as a cone and a pyramid can be employed.
• the columnar semiconductor layer may have the same conductivity type as the substrate or a different conductivity type.
• the method for forming the columnar semiconductor layer is not particularly limited, and any known method can be used. For example, a method of forming a columnar semiconductor layer by depositing a semiconductor layer on a substrate and etching the semiconductor layer using an epitaxial method, or a method of forming a columnar semiconductor layer by digging down the substrate by etching Is mentioned.
• a floating gate is disposed in parallel to the side surface.
• the upper or lower portion of the floating gate in the width direction does not necessarily have to be perpendicular to the columnar semiconductor layer, and may be arbitrarily inclined.
• the method for forming the floating gate is not particularly limited, and examples thereof include a deposition method.
• the floating gate may have the same or different material force as the material constituting the substrate and / or the columnar semiconductor layer, but is not particularly limited.
• the floating gate is formed by a deposition method as described above, Polysilicon that is easy to deposit by chemical vapor deposition is preferred.
• An insulating film such as a silicon oxide film is usually formed between the columnar semiconductor layer and the floating gate.
• control gate is formed via an insulating film so as to cover the opposite surface opposite to the side facing the columnar semiconductor layer of the floating gate and at least one other surface adjacent thereto.
• the ratio of the control gate covering the floating gate is not particularly limited. However, the viewpoint power to increase the coupling ratio is also preferable.
• the formation method of a control gate is not specifically limited, For example, the deposition method is mentioned.
• the material constituting the control gate is not particularly limited, and examples thereof include semiconductors such as polysilicon and amorphous silicon, silicides, metals, refractory metals, and the like.
• semiconductors such as polysilicon and amorphous silicon, silicides, metals, refractory metals, and the like.
• Easy to deposit by chemical vapor deposition! ⁇ Polysilicon is preferred.
• Insulating film formed between control gate and floating gate
• an interpoly insulating film having a three-layer force of a silicon nitride film and a silicon oxide film.
• an impurity diffusion layer can be formed on the upper and lower portions of the columnar semiconductor layer or on the semiconductor substrate.
• the upper diffusion layer of the impurity diffusion layer functions as a drain / source region
• the diffusion layer formed below the columnar semiconductor layer or on the semiconductor substrate functions as a source / drain region.
• the lower diffusion layer of the columnar semiconductor layer may extend from the columnar semiconductor layer onto the semiconductor substrate.
• the impurity diffusion layer is formed on the semiconductor substrate, the entire upper surface of the semiconductor substrate excluding the base portion of the columnar semiconductor layer, or the lower portion of the floating gate and the control gate of the semiconductor substrate You may form in the peripheral part on the semiconductor substrate except.
• the impurity diffusion layer includes a semiconductor substrate and a columnar semiconductor layer.
• the first conductivity type is n-type
• the second conductivity type is p-type
• the columnar semiconductor layer is p-type.
• the first conductivity type is preferably n-type.
• a bit line can be formed by exposing the surface of the diffusion layer formed above the columnar semiconductor layer by a method known to those skilled in the art.
• the columnar semiconductor layer is provided on the substrate, the floating gate is disposed in parallel to the side surface of the columnar semiconductor layer, and the control gate is disposed on the side facing the columnar semiconductor layer of the floating gate.
• a nonvolatile semiconductor memory device formed so as to cover the opposite facing surface and the upper and lower portions.
• a nonvolatile semiconductor memory device in which the control gate is formed so as to cover the opposing surface and the upper portion of the floating gate is also included in the scope of the present invention.
• control gate is included in the scope of the present invention, wherein the control gate is formed so as to cover the opposing surface and the lower part of the floating gate.
• FIG. 1 to FIG. 10b are schematic views showing stepwise a manufacturing method of one nonvolatile semiconductor memory device existing on a semiconductor substrate according to the present invention.
• 10b to 16 are schematic views showing the structure of a nonvolatile semiconductor memory device manufactured according to the present invention.
• FIGS. 17 to 20 and FIGS. 21 to 25 are schematic views showing the structures of the semiconductor device according to the prior art and the semiconductor memory device according to the present invention, respectively.
• a columnar semiconductor layer formed on a semiconductor substrate is shown in a columnar shape.
• a thick silicon oxide film (2) is formed by thermal oxidation on a p-type semiconductor substrate (1) made of silicon (FIG. 1).
• the silicon oxide film is formed as a mask for etching the p-type semiconductor substrate by lithography and reactive ion etching (RIE) technology (FIG. 2).
• RIE reactive ion etching
• a silicon pillar is formed by shaving the p-type semiconductor substrate by, for example, a depth of about 500 nm by RIE technology (FIG. 3).
• the etching mask and silicon oxide on the silicon pillar are removed by a wet etching technique (FIG. 4a). Then, the silicon pillar is thinned by sacrificial oxidation using thermal oxidation technology and wet etching technology (Fig. 4b).
• gate oxidation is performed to form a gate oxide film (3) on the entire surface including the periphery of the silicon pillar (Fig. 4c).
• a polysilicon layer (4) is then deposited by chemical vapor deposition (CVD) technology ( Figure 5a). Then, the surface of the polysilicon deposited by the thermal acid method is oxidized to form an oxide film (5) (FIG. 5b).
• CVD chemical vapor deposition
• the polysilicon is removed by wet etching ( Figure 6b) to form a floating gate.
• phosphorus (P) ions are implanted into the silicon pillar by oblique ion implantation to form a diffusion layer (7/8) that becomes the source / drain of the memory, thereby forming a first layer consisting of a channel and a source / drain cap.
• the first and second semiconductor layers (6-8) are formed (FIG. 7).
• the silicon oxide film and the polysilicon film function as a mask, and the channel portion (6) of the memory is formed in a self-aligned manner.
• the length of the formed memory channel in the y-axis direction is the channel length.
• the length of the channel can be easily adjusted by RIE of the polysilicon oxide film and wet etching of the polysilicon shown in each step of FIGS. 6a to 6c.
• an interpoly insulating film having a one-layer silicon oxide physical force can also be formed.
• a polysilicon layer (11) is deposited on the surface of the silicon oxide formed as described above by the CVD technique, and the surface of the polysilicon is flattened by the chemical mechanical polishing (CMP) technique. ( Figure 9a).
• control gate is formed by lithography and RIE technology ( Figure 9b).
• upper part of the control gate is formed by molding polysilicon by RIE technology to obtain the structure shown in FIG. 9c.
• silicon oxide (13) is deposited on the surface of the obtained structure by CVD technology.
• bit line (14) is formed by CVD technology and lithography, thereby providing a nonvolatile semiconductor memory device in which a control gate is formed so as to cover the opposing surface and upper and lower portions of the floating gate. ( Figure 10b).
• the channel portion is not floating, and is arranged in parallel with the channel portion without sandwiching the control gate below the floating gate. In addition, it has a transistor portion.
• FIGS. 11 to 16 each show a nonvolatile semiconductor memory according to another embodiment of the present invention obtained by slightly changing the manufacturing conditions in the manufacturing method of the nonvolatile semiconductor memory device shown in FIG. 10b (Example 1). An example of manufacturing a conductive semiconductor memory device will be described.
• the semiconductor memory device shown in FIG. 11 having the same length as the p-type channel force floating gate between the n-type drain diffusion layer and the n-type source diffusion layer in Example 1 by changing the conditions in step 5 Is obtained.
• the semiconductor memory device thus obtained has a transistor portion because the channel portion is floating and the diffusion layer is next to the control gate below the floating gate. Not.
• Example 1 the semiconductor memory shown in FIG. 12 in which the p-type channel is formed longer than the floating gate length between the n-type drain diffusion layer and the n-type source diffusion layer by changing the conditions in step 5 A device is obtained.
• the channel portion is floating, and the control gate below the floating gate is arranged in parallel with the channel portion without the floating gate interposed therebetween.
• the memory cell In addition to the memory cell, it has a transistor portion.
• Example 13 The semiconductor shown in FIG. 13 in which the interpoly insulating film only has a single layer of silicon oxide film as in Example 1 except that only the silicon oxide film is deposited in step 7 of Example 1. A storage device is obtained.
• the semiconductor memory device obtained in this way is obtained by changing the ONO film of the semiconductor memory device obtained in Example 1 only to a silicon oxide film, and the coupling ratio thereof is that of Example 1. Although it is lower than that of a semiconductor memory device, the number of manufacturing steps can be reduced.
• step 4 of the first embodiment the silicon oxide film and the polysilicon are subjected to the RIE technique to form a floating gate disposed on the semiconductor substrate via the gate oxide film.
• the thickness of the floating gate is substantially the same as the thickness of the polysilicon.
• step 7 a control gate is formed.
• the portion where the source Z drain diffusion layer is formed is exposed using the control gate as a mask.
• step 6 a memory drain / source diffusion layer is formed on the periphery of the semiconductor substrate except for the upper portion of the columnar semiconductor layer and the lower portion of the floating gate and the control gate.
• the control gate is formed so as to cover the opposing surface and the upper part of the floating gate by performing the processes of steps 11 and 12, and the floating gate and the control gate are formed under the p-type channel.
• the semiconductor memory device shown in FIG. 14 is obtained in which the n-type source diffusion layer is formed outside the control gate of this channel.
• the semiconductor memory device thus obtained has a control gate on the side surface and upper part of the floating gate.
• the coupling ratio is lower than that of the semiconductor memory device of Example 1.
• the number of manufacturing steps can be reduced.
• step 9 of Example 1 etching is performed until the interpoly insulating film formed on the floating gate is exposed.
• a control gate is formed so as to cover the opposite surface and the lower portion of the floating gate, and the lower part of the control gate is composed of a p-type channel, An n-type source diffusion layer is formed on the outside of the control gate of this channel, so that the semiconductor memory device shown in FIG. 15 is obtained.
• the semiconductor memory device obtained in this way has control gates on the side and bottom of the floating gate, and the coupling ratio is lower than that of the semiconductor memory device of Example 1, but the number of manufacturing steps is reduced. Can be made.
• Step 1 of Example 1 phosphorus (P) ions are implanted into the silicon pillar and the substrate surface by vertical ion implantation into the substrate to form a memory source / drain diffusion layer (7/8).
• step 6 the semiconductor memory device shown in FIG. 16 is obtained by performing the processes in and after step 2 in the same manner as in the first embodiment.
• the semiconductor memory device obtained in this way also has a transistor portion above the floating gate, compared to the semiconductor memory device of Example 1 in which the transistor portions other than the memory cells are only below the floating gate. Therefore, it is possible to increase the reliability without increasing the area.
• FIG. 12 shows a semiconductor memory device having the highest coupling ratio among the nonvolatile semiconductor memory devices according to the present invention.
• the floating gate is arranged in parallel to the side surface of the columnar semiconductor layer
• the control gate is opposite to the side of the floating gate facing the columnar semiconductor layer
• the upper portion of the floating gate adjacent thereto and The lower part is covered with an insulating film (interpoly insulating film).
• the total tunnel oxide film capacity (hereinafter referred to as C) in the conventional technology is a cylindrical shape.
• the column radius of the silicon pillar hereinafter referred to as R
• the tunnel oxide film thickness hereinafter referred to as T
• the floating gate film thickness hereinafter referred to as T and ), Interpoly insulation film thickness
• oxl—side parallel plate capacity (C) is expressed by the following formula:
• interpoly insulating film capacitance (hereinafter referred to as C.1) is only the cylindrical capacitor shown in Fig. 19, ⁇ ,, L, R, T, T, T defined above are used.
• the tunnel oxide film capacity (hereinafter referred to as C) in the present invention is not limited to the cylindrical shape shown in FIG.
• the total interpoly insulating film capacitance (hereinafter referred to as C) is a cylinder-shaped interface.
• the ONO film is composed of three layers. So Figure 21 and
• the thickness of the silicon nitride film and its capacity are T and C1, respectively.
• the capacitance C of the interpoly insulating film having a cylindrical shape is the capacitance of the ONO film.
• ⁇ ' is the thickness of the three-layer ONO film converted to a silicon oxide film.
• the coupling ratio was calculated by dividing the tunnel oxide film capacitance by the interpoly insulation film capacitance, that is, dividing the interpoly insulation film capacitance by the tunnel oxide film capacitance.
• FIG. 26 to FIG. 29 show the results of calculation and comparison as described above for each semiconductor memory device manufactured in the following test examples.
• Figure 26 shows a graph that compares changes in the coupling ratio due to changes in the floating gate thickness.
• the vertical axis indicates the coupling ratio
• the horizontal axis indicates the floating gate film thickness T.
• the semiconductor memory device according to the present invention has a larger coupling ratio than that according to the prior art, and the difference becomes larger as the floating gate film thickness is increased.
• the semiconductor memory device according to the present invention increases the thickness T.
• control gate since the control gate is above and below the floating gate, it is possible to increase only the capacitance between the control gate and the floating gate without increasing the capacitance between the semiconductor layer and the floating gate.
• the coupling ratio can be made larger than that of the conventional SGT flash memory. Therefore, the write characteristics are improved, and an ideal sub-threshold swing S can be realized.

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• 2006
  • 2006-06-02 WO PCT/JP2006/311122 patent/WO2006132158A1/ja not_active Ceased
  • 2006-06-02 JP JP2007520081A patent/JP4909894B2/ja not_active Expired - Fee Related
  • 2006-06-09 TW TW095120498A patent/TW200721395A/zh unknown

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