TWI281191B - Emitter electrodes formed of or coated with a carbide material for gas ionizers - Google Patents

Emitter electrodes formed of or coated with a carbide material for gas ionizers Download PDF

Info

Publication number
TWI281191B
TWI281191B TW094134198A TW94134198A TWI281191B TW I281191 B TWI281191 B TW I281191B TW 094134198 A TW094134198 A TW 094134198A TW 94134198 A TW94134198 A TW 94134198A TW I281191 B TWI281191 B TW I281191B
Authority
TW
Taiwan
Prior art keywords
emitter electrode
electrode
carbide
corona
ionizer
Prior art date
Application number
TW094134198A
Other languages
English (en)
Chinese (zh)
Other versions
TW200612467A (en
Inventor
James R Curtis
John A Gorczyca
Original Assignee
Illinois Tool Works
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Illinois Tool Works filed Critical Illinois Tool Works
Publication of TW200612467A publication Critical patent/TW200612467A/zh
Application granted granted Critical
Publication of TWI281191B publication Critical patent/TWI281191B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01T—SPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES
    • H01T19/00—Devices providing for corona discharge
    • H01T19/04—Devices providing for corona discharge having pointed electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01T—SPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES
    • H01T23/00—Apparatus for generating ions to be introduced into non-enclosed gases, e.g. into the atmosphere

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Elimination Of Static Electricity (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Plasma Technology (AREA)
  • Ceramic Products (AREA)
TW094134198A 2004-10-01 2005-09-30 Emitter electrodes formed of or coated with a carbide material for gas ionizers TWI281191B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/956,316 US7501765B2 (en) 2004-10-01 2004-10-01 Emitter electrodes formed of chemical vapor deposition silicon carbide

Publications (2)

Publication Number Publication Date
TW200612467A TW200612467A (en) 2006-04-16
TWI281191B true TWI281191B (en) 2007-05-11

Family

ID=35447546

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094134198A TWI281191B (en) 2004-10-01 2005-09-30 Emitter electrodes formed of or coated with a carbide material for gas ionizers

Country Status (6)

Country Link
US (2) US7501765B2 (https=)
EP (1) EP1650844B1 (https=)
JP (1) JP5021198B2 (https=)
CN (1) CN1764028B (https=)
DE (1) DE602005001044T2 (https=)
TW (1) TWI281191B (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8885317B2 (en) 2011-02-08 2014-11-11 Illinois Tool Works Inc. Micropulse bipolar corona ionizer and method
US8773837B2 (en) 2007-03-17 2014-07-08 Illinois Tool Works Inc. Multi pulse linear ionizer
US9380689B2 (en) * 2008-06-18 2016-06-28 Illinois Tool Works Inc. Silicon based charge neutralization systems
US20090316325A1 (en) * 2008-06-18 2009-12-24 Mks Instruments Silicon emitters for ionizers with high frequency waveforms
US8482898B2 (en) 2010-04-30 2013-07-09 Tessera, Inc. Electrode conditioning in an electrohydrodynamic fluid accelerator device
US9125284B2 (en) 2012-02-06 2015-09-01 Illinois Tool Works Inc. Automatically balanced micro-pulsed ionizing blower
USD743017S1 (en) 2012-02-06 2015-11-10 Illinois Tool Works Inc. Linear ionizing bar
US9918374B2 (en) 2012-02-06 2018-03-13 Illinois Tool Works Inc. Control system of a balanced micro-pulsed ionizer blower
RU2693560C2 (ru) * 2013-06-21 2019-07-03 Смитс Детекшен Монреаль Инк. Способ и устройство для покрытого оболочкой источника ионизации коронного разряда
JP6673931B2 (ja) * 2015-03-23 2020-03-25 イリノイ トゥール ワークス インコーポレイティド シリコンベース電荷中和システム
KR101787446B1 (ko) 2016-08-09 2017-10-18 송방원 정전방전 자동 테스트 시스템
AU2018280166A1 (en) * 2017-06-07 2019-11-21 Lawrence Livermore National Security, Llc. Plasma confinement system and methods for use
CN116598895A (zh) * 2023-06-05 2023-08-15 东莞松山湖国际机器人研究院有限公司 一种离子风发生装置的改性放电电极及其改性方法和应用

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3579966D1 (de) * 1984-05-14 1990-11-08 Telecommunications Sa Gaslaser.
US5229625A (en) * 1986-08-18 1993-07-20 Sharp Kabushiki Kaisha Schottky barrier gate type field effect transistor
JPS63130149A (ja) 1986-11-19 1988-06-02 Fuji Electric Co Ltd 電気集塵装置
US5008594A (en) * 1989-02-16 1991-04-16 Chapman Corporation Self-balancing circuit for convection air ionizers
JPH03188699A (ja) 1989-09-05 1991-08-16 Tetsuo Motohashi 除電装置用放電電極
US5447763A (en) * 1990-08-17 1995-09-05 Ion Systems, Inc. Silicon ion emitter electrodes
SE468195B (sv) 1991-03-04 1992-11-23 Holmbergs Fab Ab Brdr Laas till bilbaelte, saerskilt barnbaelte
JPH05152054A (ja) 1991-11-29 1993-06-18 Tokyo Tekko Kk 除電装置用放電電極とその製造方法
JP2703151B2 (ja) * 1992-07-01 1998-01-26 清二 加川 コロナ放電用電極、コロナ放電処理装置および多孔質フィルムの製造装置
JPH0636857A (ja) 1992-07-13 1994-02-10 Tokyo Tekko Co Ltd 除電装置用放電電極とその製造方法
JPH0770348B2 (ja) 1992-09-02 1995-07-31 東京鐵鋼株式会社 イオナイザー用放電電極の製造方法
JP3455984B2 (ja) * 1993-02-15 2003-10-14 東レ株式会社 帯電走行体の除電方法
JPH10208848A (ja) * 1997-01-22 1998-08-07 Kazuo Okano イオン発生装置用放電電極
US5938823A (en) * 1997-04-18 1999-08-17 Carrier Corporation Integrated electrostatic collection and microwave sterilization for bioaerosol air purification
US6215248B1 (en) 1997-07-15 2001-04-10 Illinois Tool Works Inc. Germanium emitter electrodes for gas ionizers
US6451157B1 (en) * 1999-09-23 2002-09-17 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US7018947B2 (en) * 2000-02-24 2006-03-28 Shipley Company, L.L.C. Low resistivity silicon carbide
US20020127853A1 (en) * 2000-12-29 2002-09-12 Hubacek Jerome S. Electrode for plasma processes and method for manufacture and use thereof
JP4060577B2 (ja) * 2001-11-26 2008-03-12 サンクス株式会社 被除電対象物の除電方法および除電装置
JP2004288547A (ja) * 2003-03-24 2004-10-14 Matsushita Electric Ind Co Ltd 電界放出型電子源およびその製造方法および画像表示装置

Also Published As

Publication number Publication date
EP1650844B1 (en) 2007-05-02
CN1764028A (zh) 2006-04-26
DE602005001044T2 (de) 2008-01-10
US7501765B2 (en) 2009-03-10
EP1650844A1 (en) 2006-04-26
JP5021198B2 (ja) 2012-09-05
DE602005001044D1 (de) 2007-06-14
CN1764028B (zh) 2010-05-12
US8067892B2 (en) 2011-11-29
US20060071599A1 (en) 2006-04-06
JP2006108101A (ja) 2006-04-20
US20090176431A1 (en) 2009-07-09
TW200612467A (en) 2006-04-16

Similar Documents

Publication Publication Date Title
TWI281191B (en) Emitter electrodes formed of or coated with a carbide material for gas ionizers
US20040256975A1 (en) Electrode and associated devices and methods
JP4390847B1 (ja) 電子放出体および電子放出体を備えた電界放射装置
JP5491035B2 (ja) 電界放出型電子源の製造方法
US10136507B2 (en) Silicon based ion emitter assembly
JP2003217516A (ja) 保護膜を有する炭素ナノチューブを具備した電界放出素子
CN101621182A (zh) 离子发生元件、离子发生装置、电气设备
US8070548B2 (en) Method for making thermal electron emitter
JP4070546B2 (ja) イオン発生素子およびこれを備えたイオン発生装置
JP7069203B2 (ja) ダイヤモンド半導体装置
Choi et al. Field-emission characteristics of nitrogen-doped diamond-like carbon film deposited by filtered cathodic vacuum arc technique
US20210017967A1 (en) Field emission neutralizer
TWI740192B (zh) 場發射中和器
WO2018016291A1 (ja) 電子放出材料および電子放出素子
JP4255418B2 (ja) イオン発生装置及びこれを備えた電気機器
JP4817848B2 (ja) 複合炭素膜および電子エミッタ
JP2022073816A (ja) 蔓状炭素膜
JP2550625B2 (ja) オゾン発生装置
JP4302428B2 (ja) 静電吸着機能を有するウエーハ加熱装置
JP2002343534A (ja) イオン発生素子及びそれを備えた空気調節装置
JP2628865B2 (ja) オゾナイザー電極
JP2008044828A (ja) カーボンナノチューブ形成装置、カーボンナノチューブ形成方法
Li et al. Fabrication and characterization of individually ballasted carbon nanotube field emitter arrays using doped silicon resistor
Lee et al. Improved surface morphologies of printed carbon nanotubes by heat treatment and their field emission properties
Chacon et al. Field-emission enhancement of reticulated vitreous carbon (RVC) due to structural surface changes resulting for argon ion bombardment

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent