JP7069203B2 - ダイヤモンド半導体装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 83
- 229910003460 diamond Inorganic materials 0.000 title claims description 66
- 239000010432 diamond Substances 0.000 title claims description 66
- 239000000758 substrate Substances 0.000 claims description 45
- 239000002019 doping agent Substances 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 39
- 230000005684 electric field Effects 0.000 claims description 33
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 229910021478 group 5 element Inorganic materials 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 230000003197 catalytic effect Effects 0.000 claims description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 239000011593 sulfur Substances 0.000 claims description 3
- 229910052717 sulfur Inorganic materials 0.000 claims description 3
- 239000003575 carbonaceous material Substances 0.000 claims description 2
- 239000003054 catalyst Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- 125000004429 atom Chemical group 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910021476 group 6 element Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000002829 nitrogen Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1602—Diamond
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
- H01J1/3044—Point emitters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
- H01L21/042—Changing their shape, e.g. forming recesses
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30403—Field emission cathodes characterised by the emitter shape
- H01J2201/30407—Microengineered point emitters
- H01J2201/30411—Microengineered point emitters conical shaped, e.g. Spindt type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30446—Field emission cathodes characterised by the emitter material
- H01J2201/30453—Carbon types
- H01J2201/30457—Diamond
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30446—Field emission cathodes characterised by the emitter material
- H01J2201/3048—Semiconductor materials
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- Cold Cathode And The Manufacture (AREA)
- Electrodes Of Semiconductors (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
- Control Of Electric Motors In General (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
ダイヤモンド材料の基板;
上記の基板内のそれぞれの凹部に延びる少なくとも1つの細長い第1の導電性部分;及び
少なくとも1つのドープされた半導体領域であり、少なくとも1つのそれぞれの上記の第1の導電性部分と上記の基板との間に配置され、上記の第1の導電性部分と上記の基板との間で、電場を印加することによりn型半導体材料として振る舞うように構成され、半導体領域内に正の空間電荷の領域を生じさせるのに適した、少なくとも1つのドープされた半導体領域;
を含む。
ダイヤモンド材料の基板内に少なくとも1つの凹部を形成するステップ;
少なくとも1つの上記の凹部内に少なくとも1つのドープされた半導体領域を形成するステップ;及び
少なくとも1つの上記の凹部内に少なくとも1つの細長い第1の導電性部分を形成するステップであり、少なくとも1つの上記の半導体領域は、少なくとも1つの上記の第1の導電性部分と上記の基板との間に配置され、上記の第1の導電性部分と上記の基板との間で、電場を印加することによりn型半導体材料として振る舞うように構成され、半導体領域内に正の空間電荷の領域を生じさせるのに適している、ステップ;
を含む。
Claims (22)
- ダイヤモンド材料の基板と、
前記基板内のそれぞれの凹部に延びる少なくとも1つの細長い第1の導電性部分であって、前記凹部は、前記基板の表面から延在する、第1の導電性部分と、
少なくとも1つのドープされた半導体領域であって、少なくとも1つのそれぞれの前記第1の導電性部分と前記基板との間に配置され、前記第1の導電性部分と前記基板との間で、電場を印加することによりn型半導体材料として振る舞うように構成され、前記半導体領域内に正の空間電荷の領域を生じさせるのに適した、少なくとも1つのドープされた半導体領域と、
を含む電気装置であって、
少なくとも1つの凹部は、前記凹部の先端に点を画定する少なくとも1つの傾斜した遠位表面をさらに含み、少なくとも1つの前記ドープされた半導体領域は、それぞれの前記傾斜した遠位表面上に配置されている、電気装置。 - 少なくとも1つの前記半導体領域はダイヤモンドを含む、請求項1に記載の装置。
- 少なくとも1つの前記半導体領域は、n型半導体特徴を前記領域に与えるために少なくとも1つのドナードーパントを含む、請求項1又は2に記載の装置。
- 少なくとも1つの前記半導体領域は、n型半導体特徴を前記領域に与えるために複数のドーパント材料を含む、請求項3に記載の装置。
- 少なくとも1つの前記ドナードーパントはV族元素である、請求項3又は4に記載の装置。
- 少なくとも1つの前記ドナードーパントは硫黄である、請求項3乃至5のいずれか一項に記載の装置。
- 少なくとも1つの前記第1の導電性部分は、前記電場を局所的に促進するように構成されている、請求項1乃至6のいずれか一項に記載の装置。
- 少なくとも1つの前記第1の導電性部分は、前記半導体領域とのショットキー接触を形成する少なくとも1つの金属を含む、請求項1乃至7のいずれか一項に記載の装置。
- 少なくとも1つの前記第1の導電性部分に接続された少なくとも1つの第2の導電性部分をさらに含む、請求項1乃至8のいずれか一項に記載の装置。
- 少なくとも1つの前記半導体領域の表面の少なくとも一部を終端化させる少なくとも1つの第1の終端材料をさらに含み、そこに正の電子親和力を与える、請求項1乃至9のいずれか一項に記載の装置。
- 少なくとも1つの前記第1の終端材料は酸素を含む、請求項10に記載の装置。
- 少なくとも1つの前記第1の終端材料はフッ素を含む、請求項10又は11に記載の装置。
- 電気装置を形成する方法であって、
ダイヤモンド材料の基板内に少なくとも1つの凹部を形成するステップであって、前記凹部は、前記基板の表面から延在する、ステップと、
少なくとも1つの前記凹部内に少なくとも1つのドープされた半導体領域を形成するステップと、
少なくとも1つの前記凹部内に少なくとも1つの細長い第1の導電性部分を形成するステップであって、少なくとも1つの前記半導体領域は、少なくとも1つの前記第1の導電性部分と前記基板との間に配置され、前記第1の導電性部分と前記基板との間で、電場を印加することによりn型半導体材料として振る舞うように構成され、前記半導体領域内に正の空間電荷の領域を生じさせるのに適している、ステップと、
を含み、
少なくとも1つの前記凹部を形成するステップは、前記凹部の先端に点を画定する少なくとも1つの傾斜した遠位表面を形成するステップをさらに含み、少なくとも1つの前記ドープされた半導体領域は、それぞれの前記傾斜した遠位表面上に配置される、方法。 - 少なくとも1つの前記半導体領域はダイヤモンドを含む、請求項13に記載の方法。
- 少なくとも1つの前記半導体領域は、n型半導体特徴を前記領域に与えるために少なくとも1つのドナードーパントを含む、請求項13又は14に記載の方法。
- 少なくとも1つの前記半導体領域は、n型半導体特徴を前記領域に与えるために複数のドーパント材料を含む、請求項15に記載の方法。
- 少なくとも1つの前記ドナードーパントはV族元素である、請求項15又は16に記載の方法。
- 少なくとも1つの前記ドナードーパントは硫黄である、請求項15乃至17のいずれか一項に記載の方法。
- 少なくとも1つの前記第1の導電性部分は、前記電場を局所的に促進するように構成される、請求項13乃至18のいずれか一項に記載の方法。
- 少なくとも1つの第2の導電性部分を、少なくとも1つの前記第1の導電性部分に適用するステップをさらに含む、請求項13乃至19のいずれか一項に記載の方法。
- 少なくとも1つの前記半導体領域の表面の少なくとも一部を終端化させて、そこに正の電子親和力を与えるステップをさらに含む、請求項13乃至20のいずれか一項に記載の方法。
- ダイヤモンド材料の基板内に少なくとも1つの凹部を形成するステップは、前記基板の表面上に少なくとも1つの触媒材料を配置し、前記触媒材料に、接触しているダイヤモンドを非ダイヤモンドの炭素材料に変換させ、前記触媒材料に前記基板に浸透させるステップを含む、請求項13乃至21のいずれか一項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP17162272.3A EP3379580A1 (en) | 2017-03-22 | 2017-03-22 | Diamond semiconductor device |
EP17162272.3 | 2017-03-22 | ||
PCT/EP2018/054929 WO2018172029A1 (en) | 2017-03-22 | 2018-02-28 | Diamond semiconductor device |
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JP2020511798A JP2020511798A (ja) | 2020-04-16 |
JP7069203B2 true JP7069203B2 (ja) | 2022-05-17 |
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JP2019551710A Active JP7069203B2 (ja) | 2017-03-22 | 2018-02-28 | ダイヤモンド半導体装置 |
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US (1) | US11011605B2 (ja) |
EP (2) | EP3379580A1 (ja) |
JP (1) | JP7069203B2 (ja) |
KR (1) | KR102414061B1 (ja) |
CN (1) | CN110431670A (ja) |
TW (1) | TWI782961B (ja) |
WO (1) | WO2018172029A1 (ja) |
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CN112133752B (zh) * | 2020-08-27 | 2021-11-19 | 西安电子科技大学 | 一种复合终端表面金刚石高压场效应晶体管及其制作方法 |
EP3989260A1 (en) | 2020-10-22 | 2022-04-27 | Evince Technology Ltd | Apparatus for generating ionised gaseous or vapour material |
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JP2009540591A (ja) | 2006-06-13 | 2009-11-19 | エヴィンス テクノロジー リミテッド | 電気スイッチングデバイス、及びダイヤモンド基板に触媒材料を埋め込む方法 |
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US5713775A (en) * | 1995-05-02 | 1998-02-03 | Massachusetts Institute Of Technology | Field emitters of wide-bandgap materials and methods for their fabrication |
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JP4539011B2 (ja) * | 2002-02-20 | 2010-09-08 | 富士電機システムズ株式会社 | 半導体装置 |
EP1895579B1 (en) * | 2005-06-20 | 2016-06-15 | Nippon Telegraph And Telephone Corporation | Diamond semiconductor element and process for producing the same |
US8637386B2 (en) * | 2009-05-12 | 2014-01-28 | Cree, Inc. | Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same |
US8264047B2 (en) * | 2010-05-10 | 2012-09-11 | Infineon Technologies Austria Ag | Semiconductor component with a trench edge termination |
US9318623B2 (en) * | 2011-04-05 | 2016-04-19 | Cree, Inc. | Recessed termination structures and methods of fabricating electronic devices including recessed termination structures |
US9219020B2 (en) * | 2012-03-08 | 2015-12-22 | Infineon Technologies Ag | Semiconductor device, wafer assembly and methods of manufacturing wafer assemblies and semiconductor devices |
JP6203074B2 (ja) * | 2014-02-17 | 2017-09-27 | 株式会社東芝 | 半導体装置およびその製造方法 |
US10700165B2 (en) * | 2016-06-17 | 2020-06-30 | Adamantite Technologies LLC | Doped diamond SemiConductor and method of manufacture using laser abalation |
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WO2018172029A1 (en) | 2018-09-27 |
EP3602634A1 (en) | 2020-02-05 |
KR20190129047A (ko) | 2019-11-19 |
US11011605B2 (en) | 2021-05-18 |
CN110431670A (zh) | 2019-11-08 |
TWI782961B (zh) | 2022-11-11 |
KR102414061B1 (ko) | 2022-06-28 |
JP2020511798A (ja) | 2020-04-16 |
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