TWI279590B - Transmission shear grating in checkerboard configuration for EUV wavefront sensor - Google Patents

Transmission shear grating in checkerboard configuration for EUV wavefront sensor Download PDF

Info

Publication number
TWI279590B
TWI279590B TW093100919A TW93100919A TWI279590B TW I279590 B TWI279590 B TW I279590B TW 093100919 A TW093100919 A TW 093100919A TW 93100919 A TW93100919 A TW 93100919A TW I279590 B TWI279590 B TW I279590B
Authority
TW
Taiwan
Prior art keywords
grating
projection optical
optical system
plane
source
Prior art date
Application number
TW093100919A
Other languages
English (en)
Chinese (zh)
Other versions
TW200417758A (en
Inventor
Sherman K Poultney
Original Assignee
Asml Holding Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Holding Nv filed Critical Asml Holding Nv
Publication of TW200417758A publication Critical patent/TW200417758A/zh
Application granted granted Critical
Publication of TWI279590B publication Critical patent/TWI279590B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J9/00—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
    • G01J9/02—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods
    • G01J9/0215—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods by shearing interferometric methods
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1838—Diffraction gratings for use with ultraviolet radiation or X-rays
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J9/00—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
    • G01J9/02—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods
    • G01J9/0215—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods by shearing interferometric methods
    • G01J2009/0219—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods by shearing interferometric methods using two or more gratings

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Public Health (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Instruments For Measurement Of Length By Optical Means (AREA)
TW093100919A 2003-01-15 2004-01-14 Transmission shear grating in checkerboard configuration for EUV wavefront sensor TWI279590B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US44005003P 2003-01-15 2003-01-15
US10/750,986 US7268891B2 (en) 2003-01-15 2004-01-05 Transmission shear grating in checkerboard configuration for EUV wavefront sensor

Publications (2)

Publication Number Publication Date
TW200417758A TW200417758A (en) 2004-09-16
TWI279590B true TWI279590B (en) 2007-04-21

Family

ID=32600286

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093100919A TWI279590B (en) 2003-01-15 2004-01-14 Transmission shear grating in checkerboard configuration for EUV wavefront sensor

Country Status (7)

Country Link
US (2) US7268891B2 (https=)
EP (1) EP1439427A3 (https=)
JP (1) JP3950858B2 (https=)
KR (1) KR100730245B1 (https=)
CN (1) CN100476586C (https=)
SG (1) SG107675A1 (https=)
TW (1) TWI279590B (https=)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7268891B2 (en) * 2003-01-15 2007-09-11 Asml Holding N.V. Transmission shear grating in checkerboard configuration for EUV wavefront sensor
US6867846B2 (en) * 2003-01-15 2005-03-15 Asml Holding Nv Tailored reflecting diffractor for EUV lithographic system aberration measurement
US7027164B2 (en) * 2003-01-15 2006-04-11 Asml Holding N.V. Speckle reduction method and system for EUV interferometry
WO2005069080A2 (de) * 2004-01-16 2005-07-28 Carl Zeiss Smt Ag Vorrichtung und verfahren zur optischen vermessung eines optischen systems, messstrukturträger und mikrolithographie-projektionsbelichtungsanlage
JP4083751B2 (ja) * 2004-01-29 2008-04-30 エーエスエムエル ホールディング エヌ．ブイ． 空間光変調器アレイを較正するシステムおよび空間光変調器アレイを較正する方法
US20050259269A1 (en) 2004-05-19 2005-11-24 Asml Holding N.V. Shearing interferometer with dynamic pupil fill
US20060001890A1 (en) * 2004-07-02 2006-01-05 Asml Holding N.V. Spatial light modulator as source module for DUV wavefront sensor
US7492442B2 (en) 2004-08-27 2009-02-17 Asml Holding N.V. Adjustable resolution interferometric lithography system
JP2006332586A (ja) * 2005-04-25 2006-12-07 Canon Inc 測定装置、露光装置及び方法、並びに、デバイス製造方法
JP4984522B2 (ja) * 2005-12-21 2012-07-25 株式会社ニコン 波面収差測定装置、ピンホールマスク、投影露光装置、及び投影光学系の製造方法
DE102006014380A1 (de) * 2006-03-27 2007-10-11 Carl Zeiss Smt Ag Projektionsobjektiv und Projektionsbelichtungsanlage mit negativer Schnittweite der Eintrittspupille
US7889315B2 (en) * 2006-04-13 2011-02-15 Asml Netherlands B.V. Lithographic apparatus, lens interferometer and device manufacturing method
US20080246941A1 (en) * 2007-04-06 2008-10-09 Katsura Otaki Wavefront aberration measuring device, projection exposure apparatus, method for manufacturing projection optical system, and method for manufacturing device
NL1036305A1 (nl) * 2007-12-21 2009-06-23 Asml Netherlands Bv Grating for EUV-radiation, method for manufacturing the grating and wavefront measurement system.
EP2343537B1 (en) 2008-10-29 2019-04-10 Canon Kabushiki Kaisha X-ray imaging device and x-ray imaging method
US8559594B2 (en) 2008-10-29 2013-10-15 Canon Kabushiki Kaisha Imaging apparatus and imaging method
NL2004242A (en) * 2009-04-13 2010-10-14 Asml Netherlands Bv Detector module, cooling arrangement and lithographic apparatus comprising a detector module.
NL2004322A (en) 2009-04-13 2010-10-14 Asml Netherlands Bv Cooling device, cooling arrangement and lithographic apparatus comprising a cooling arrangement.
WO2012103933A1 (en) * 2011-02-01 2012-08-09 Carl Zeiss Smt Gmbh Method and apparatus for correcting errors in an euv lithography system
CN102436058B (zh) * 2011-12-14 2013-08-21 北京理工大学 一种用于深紫外波段的全球面折反式准直物镜
DE102012204704A1 (de) * 2012-03-23 2013-09-26 Carl Zeiss Smt Gmbh Messvorrichtung zum Vermessen einer Abbildungsgüte eines EUV-Objektives
DE102015216438A1 (de) 2015-08-27 2017-03-02 Carl Zeiss Smt Gmbh Sensoranordnung für eine Lithographieanlage, Lithographieanlage und Verfahren zum Betreiben einer Lithographieanlage
DE102016212477A1 (de) * 2016-07-08 2018-01-11 Carl Zeiss Smt Gmbh Messverfahren und Messsystem zur interferometrischen Vermessung der Abbildungsqualität eines optischen Abbildungssystems
DE102017200428B3 (de) 2017-01-12 2018-06-21 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage sowie Verfahren zum Vermessen eines Abbildungsfehlers
NL2021357A (en) * 2018-01-31 2018-08-16 Asml Netherlands Bv Two-dimensional diffraction grating
CN108594586A (zh) * 2018-07-17 2018-09-28 深圳市光科全息技术有限公司 超短焦投影光线膜
US11609506B2 (en) * 2021-04-21 2023-03-21 Kla Corporation System and method for lateral shearing interferometry in an inspection tool
CN115309000B (zh) * 2021-05-07 2025-08-08 中国科学院上海光学精密机械研究所 一种多通道物镜畸变和倍率的检测装置及方法

Family Cites Families (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4490608A (en) 1980-10-21 1984-12-25 Crosfield Electronics Limited Position sensor
US4413909A (en) 1981-06-01 1983-11-08 Lockheed Missiles & Space Co., Inc. Wavefront tilt measuring apparatus
JPS5816216A (ja) 1981-07-22 1983-01-29 Canon Inc タルボ干渉計
US4518854A (en) * 1982-06-17 1985-05-21 Itek Corporation Combined shearing interferometer and Hartmann wavefront sensor
US4703434A (en) * 1984-04-24 1987-10-27 The Perkin-Elmer Corporation Apparatus for measuring overlay error
US4707137A (en) * 1985-10-25 1987-11-17 Laser Magnetic Storage International Company Device and method for testing the wave front quality of optical components
NL8601278A (nl) 1986-05-21 1987-12-16 Philips Nv Inrichting voor het detekteren van een vergrotingsfout in een optisch afbeeldingssysteem.
JPH03134538A (ja) 1989-10-19 1991-06-07 Matsushita Electric Ind Co Ltd レンズ評価装置
JP2543200B2 (ja) * 1989-09-13 1996-10-16 松下電器産業株式会社 レンズ評価装置
US5062705A (en) 1989-09-13 1991-11-05 Matsushita Electric Industrial Co., Ltd. Apparatus for evaluating a lens
EP0449582B1 (en) 1990-03-27 2009-10-21 Canon Kabushiki Kaisha Measuring method and apparatus
US5424552A (en) * 1991-07-09 1995-06-13 Nikon Corporation Projection exposing apparatus
EP0534720B1 (en) 1991-09-24 1998-05-27 Raphael L. Levien Register marks
US5222050A (en) 1992-06-19 1993-06-22 Knowles Electronics, Inc. Water-resistant transducer housing with hydrophobic vent
GB2269055B (en) 1992-07-09 1996-06-05 Flat Antenna Co Ltd Phase correcting zone plate
JP3078163B2 (ja) 1993-10-15 2000-08-21 キヤノン株式会社 リソグラフィ用反射型マスクおよび縮小投影露光装置
KR950033689A (ko) 1994-03-02 1995-12-26 오노 시게오 노광장치 및 이를 이용한 회로패턴 형성방법
JP3448673B2 (ja) 1994-03-02 2003-09-22 株式会社ニコン 投影露光装置
EP0712012A1 (en) 1994-11-09 1996-05-15 International Business Machines Corporation Authentication label and authenticating pattern incorporating diffracting structure and method of fabricating them
JPH08316124A (ja) * 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
US5835217A (en) 1997-02-28 1998-11-10 The Regents Of The University Of California Phase-shifting point diffraction interferometer
US5920380A (en) * 1997-12-19 1999-07-06 Sandia Corporation Apparatus and method for generating partially coherent illumination for photolithography
US5958629A (en) 1997-12-22 1999-09-28 Intel Corporation Using thin films as etch stop in EUV mask fabrication process
US6898216B1 (en) 1999-06-30 2005-05-24 Lambda Physik Ag Reduction of laser speckle in photolithography by controlled disruption of spatial coherence of laser beam
US6072631A (en) 1998-07-09 2000-06-06 3M Innovative Properties Company Diffractive homogenizer with compensation for spatial coherence
US6312373B1 (en) * 1998-09-22 2001-11-06 Nikon Corporation Method of manufacturing an optical system
US6498685B1 (en) * 1999-01-11 2002-12-24 Kenneth C. Johnson Maskless, microlens EUV lithography system
JP2000266914A (ja) 1999-03-12 2000-09-29 Toppan Printing Co Ltd 光拡散体およびそれを用いた表示装置
US6163405A (en) 1999-04-15 2000-12-19 Industrial Technology Research Institute Structure of a reflection-type light diffuser in a LCD
US6360012B1 (en) 1999-06-25 2002-03-19 Svg Lithography Systems, Inc. In situ projection optic metrology method and apparatus
US6373553B1 (en) 1999-09-20 2002-04-16 Intel Corp. Photo-lithographic method to print a line-space pattern with a pitch equal to half the pitch of the mask
US6266147B1 (en) * 1999-10-14 2001-07-24 The Regents Of The University Of California Phase-shifting point diffraction interferometer phase grating designs
DE19958201A1 (de) 1999-12-02 2001-06-21 Infineon Technologies Ag Lithographieverfahren und Maske zu dessen Durchführung
GB9928483D0 (en) 1999-12-03 2000-02-02 Renishaw Plc Opto-electronic scale reading apparatus
US6410193B1 (en) 1999-12-30 2002-06-25 Intel Corporation Method and apparatus for a reflective mask that is inspected at a first wavelength and exposed during semiconductor manufacturing at a second wavelength
TW550377B (en) 2000-02-23 2003-09-01 Zeiss Stiftung Apparatus for wave-front detection
US6573997B1 (en) * 2000-07-17 2003-06-03 The Regents Of California Hybrid shearing and phase-shifting point diffraction interferometer
JP2002055226A (ja) 2000-08-07 2002-02-20 Nippon Sheet Glass Co Ltd 偏光素子及びその製造方法
EP1197803B1 (en) 2000-10-10 2012-02-01 ASML Netherlands B.V. Lithographic apparatus
JPWO2002042728A1 (ja) 2000-11-27 2004-04-02 株式会社ニコン 投影光学系の収差計測方法及び装置、並びに露光方法及び装置
US6392792B1 (en) 2000-12-05 2002-05-21 The Regents Of The University Of California Method of fabricating reflection-mode EUV diffraction elements
JP2002206990A (ja) * 2001-01-09 2002-07-26 Canon Inc 波面収差測定方法及び投影露光装置
EP1231517A1 (en) 2001-02-13 2002-08-14 ASML Netherlands B.V. Lithographic projection apparatus and method of measuring wave front aberrations
EP1231514A1 (en) 2001-02-13 2002-08-14 Asm Lithography B.V. Measurement of wavefront aberrations in a lithographic projection apparatus
US6656643B2 (en) 2001-02-20 2003-12-02 Chartered Semiconductor Manufacturing Ltd. Method of extreme ultraviolet mask engineering
JP2002267842A (ja) 2001-03-12 2002-09-18 Nippon Sheet Glass Co Ltd 偏光素子及びその製造方法
US6861273B2 (en) 2001-04-30 2005-03-01 Euv Llc Method of fabricating reflection-mode EUV diffusers
EP1256843A1 (en) 2001-05-08 2002-11-13 ASML Netherlands B.V. Method of calibrating a lithographic apparatus
US6813077B2 (en) 2001-06-19 2004-11-02 Corning Incorporated Method for fabricating an integrated optical isolator and a novel wire grid structure
US7027226B2 (en) 2001-09-17 2006-04-11 Euv Llc Diffractive optical element for extreme ultraviolet wavefront control
US6665119B1 (en) 2002-10-15 2003-12-16 Eastman Kodak Company Wire grid polarizer
WO2004057423A1 (de) 2002-12-19 2004-07-08 Carl Zeiss Smt Ag Messverfahren und messsystem zur vermessung der abbildungsqualität eines optischen abbildungssystems
US7113335B2 (en) 2002-12-30 2006-09-26 Sales Tasso R Grid polarizer with suppressed reflectivity
US7268891B2 (en) 2003-01-15 2007-09-11 Asml Holding N.V. Transmission shear grating in checkerboard configuration for EUV wavefront sensor
US6867846B2 (en) 2003-01-15 2005-03-15 Asml Holding Nv Tailored reflecting diffractor for EUV lithographic system aberration measurement
US7027164B2 (en) 2003-01-15 2006-04-11 Asml Holding N.V. Speckle reduction method and system for EUV interferometry
US7002747B2 (en) 2003-01-15 2006-02-21 Asml Holding N.V. Diffuser plate and method of making same

Also Published As

Publication number Publication date
JP3950858B2 (ja) 2007-08-01
SG107675A1 (en) 2004-12-29
CN100476586C (zh) 2009-04-08
CN1523448A (zh) 2004-08-25
US20040169866A1 (en) 2004-09-02
EP1439427A3 (en) 2006-08-30
KR20040066038A (ko) 2004-07-23
US7602503B2 (en) 2009-10-13
KR100730245B1 (ko) 2007-06-20
JP2004219423A (ja) 2004-08-05
US7268891B2 (en) 2007-09-11
US20070153295A1 (en) 2007-07-05
TW200417758A (en) 2004-09-16
EP1439427A2 (en) 2004-07-21

Similar Documents

Publication Publication Date Title
TWI279590B (en) Transmission shear grating in checkerboard configuration for EUV wavefront sensor
US6867846B2 (en) Tailored reflecting diffractor for EUV lithographic system aberration measurement
TWI639850B (zh) 光瞳組合反射鏡、照明光學單元、照明系統、投射曝光設備、用於產生一微結構或奈米結構元件之方法以及微結構或奈米結構元件
JP4875045B2 (ja) リソグラフィ装置および方法
KR101551342B1 (ko) Ｅｕｖ-방사선에 대한 격자, 격자를 제조하는 방법, 및 파면 측정 시스템
TWI307453B (en) Illumination apparatus, exposure apparatus and device manufacturing method
KR102321222B1 (ko) 공간 광 변조기의 검사 방법 및 장치, 및 노광 방법 및 장치
CN113841072B (zh) 用于印刷具有变化的占宽比的周期性图案的方法和装置
JP2004289116A (ja) リソグラフィ装置と測定系
JP5473350B2 (ja) 照明光学系、露光装置及びデバイスの製造方法
JP2000315642A (ja) 収差による位置ずれ及びディストーションの計測方法と装置並びにレチクル
JP2004146454A (ja) 光学特性の測定方法
NL1022655C2 (nl) Werkwijze voor het meten van aberraties van een optisch projectiesysteem.
US7411687B2 (en) Speckle reduction method and system for EUV interferometry
JP7632636B2 (ja) パターン露光装置、デバイス製造方法、及び露光装置
JP4789970B2 (ja) スペックル低減方法およびｅｕｖ干渉法のためのシステム
TW200944766A (en) Measurement method and measurement reticle

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees