KR100730245B1 - Ｅｕｖ 파면 센서용 체커보드 구성 내의 투과 층밀림 격자 - Google Patents

Ｅｕｖ 파면 센서용 체커보드 구성 내의 투과 층밀림 격자 Download PDF

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Publication number
KR100730245B1
KR100730245B1 KR1020040003044A KR20040003044A KR100730245B1 KR 100730245 B1 KR100730245 B1 KR 100730245B1 KR 1020040003044 A KR1020040003044 A KR 1020040003044A KR 20040003044 A KR20040003044 A KR 20040003044A KR 100730245 B1 KR100730245 B1 KR 100730245B1
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South Korea
Prior art keywords
grating
optical system
projection optical
focal plane
source
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Expired - Fee Related
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Korean (ko)
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KR20040066038A (ko
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세르만케이. 포울트니
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에이에스엠엘 홀딩 엔.브이.
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J9/00—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
    • G01J9/02—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods
    • G01J9/0215—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods by shearing interferometric methods
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1838—Diffraction gratings for use with ultraviolet radiation or X-rays
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J9/00—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
    • G01J9/02—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods
    • G01J9/0215—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods by shearing interferometric methods
    • G01J2009/0219—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods by shearing interferometric methods using two or more gratings

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Public Health (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Instruments For Measurement Of Length By Optical Means (AREA)
KR1020040003044A 2003-01-15 2004-01-15 Ｅｕｖ 파면 센서용 체커보드 구성 내의 투과 층밀림 격자 Expired - Fee Related KR100730245B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US44005003P 2003-01-15 2003-01-15
US60/440,050 2003-01-15
US10/750,986 2004-01-05
US10/750,986 US7268891B2 (en) 2003-01-15 2004-01-05 Transmission shear grating in checkerboard configuration for EUV wavefront sensor

Publications (2)

Publication Number Publication Date
KR20040066038A KR20040066038A (ko) 2004-07-23
KR100730245B1 true KR100730245B1 (ko) 2007-06-20

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KR1020040003044A Expired - Fee Related KR100730245B1 (ko) 2003-01-15 2004-01-15 Ｅｕｖ 파면 센서용 체커보드 구성 내의 투과 층밀림 격자

Country Status (7)

Country Link
US (2) US7268891B2 (https=)
EP (1) EP1439427A3 (https=)
JP (1) JP3950858B2 (https=)
KR (1) KR100730245B1 (https=)
CN (1) CN100476586C (https=)
SG (1) SG107675A1 (https=)
TW (1) TWI279590B (https=)

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US7027164B2 (en) * 2003-01-15 2006-04-11 Asml Holding N.V. Speckle reduction method and system for EUV interferometry
WO2005069080A2 (de) * 2004-01-16 2005-07-28 Carl Zeiss Smt Ag Vorrichtung und verfahren zur optischen vermessung eines optischen systems, messstrukturträger und mikrolithographie-projektionsbelichtungsanlage
JP4083751B2 (ja) * 2004-01-29 2008-04-30 エーエスエムエル ホールディング エヌ．ブイ． 空間光変調器アレイを較正するシステムおよび空間光変調器アレイを較正する方法
US20050259269A1 (en) 2004-05-19 2005-11-24 Asml Holding N.V. Shearing interferometer with dynamic pupil fill
US20060001890A1 (en) * 2004-07-02 2006-01-05 Asml Holding N.V. Spatial light modulator as source module for DUV wavefront sensor
US7492442B2 (en) 2004-08-27 2009-02-17 Asml Holding N.V. Adjustable resolution interferometric lithography system
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US7889315B2 (en) * 2006-04-13 2011-02-15 Asml Netherlands B.V. Lithographic apparatus, lens interferometer and device manufacturing method
US20080246941A1 (en) * 2007-04-06 2008-10-09 Katsura Otaki Wavefront aberration measuring device, projection exposure apparatus, method for manufacturing projection optical system, and method for manufacturing device
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EP2343537B1 (en) 2008-10-29 2019-04-10 Canon Kabushiki Kaisha X-ray imaging device and x-ray imaging method
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NL2004242A (en) * 2009-04-13 2010-10-14 Asml Netherlands Bv Detector module, cooling arrangement and lithographic apparatus comprising a detector module.
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WO2012103933A1 (en) * 2011-02-01 2012-08-09 Carl Zeiss Smt Gmbh Method and apparatus for correcting errors in an euv lithography system
CN102436058B (zh) * 2011-12-14 2013-08-21 北京理工大学 一种用于深紫外波段的全球面折反式准直物镜
DE102012204704A1 (de) * 2012-03-23 2013-09-26 Carl Zeiss Smt Gmbh Messvorrichtung zum Vermessen einer Abbildungsgüte eines EUV-Objektives
DE102015216438A1 (de) 2015-08-27 2017-03-02 Carl Zeiss Smt Gmbh Sensoranordnung für eine Lithographieanlage, Lithographieanlage und Verfahren zum Betreiben einer Lithographieanlage
DE102016212477A1 (de) * 2016-07-08 2018-01-11 Carl Zeiss Smt Gmbh Messverfahren und Messsystem zur interferometrischen Vermessung der Abbildungsqualität eines optischen Abbildungssystems
DE102017200428B3 (de) 2017-01-12 2018-06-21 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage sowie Verfahren zum Vermessen eines Abbildungsfehlers
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CN108594586A (zh) * 2018-07-17 2018-09-28 深圳市光科全息技术有限公司 超短焦投影光线膜
US11609506B2 (en) * 2021-04-21 2023-03-21 Kla Corporation System and method for lateral shearing interferometry in an inspection tool
CN115309000B (zh) * 2021-05-07 2025-08-08 中国科学院上海光学精密机械研究所 一种多通道物镜畸变和倍率的检测装置及方法

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JP3950858B2 (ja) 2007-08-01
SG107675A1 (en) 2004-12-29
CN100476586C (zh) 2009-04-08
CN1523448A (zh) 2004-08-25
US20040169866A1 (en) 2004-09-02
TWI279590B (en) 2007-04-21
EP1439427A3 (en) 2006-08-30
KR20040066038A (ko) 2004-07-23
US7602503B2 (en) 2009-10-13
JP2004219423A (ja) 2004-08-05
US7268891B2 (en) 2007-09-11
US20070153295A1 (en) 2007-07-05
TW200417758A (en) 2004-09-16
EP1439427A2 (en) 2004-07-21

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