JP3950858B2 - 波面測定システム、ｅｕｖフォトリソグラフィシステム、及び光学系の波面を測定する方法 - Google Patents

波面測定システム、ｅｕｖフォトリソグラフィシステム、及び光学系の波面を測定する方法 Download PDF

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Publication number
JP3950858B2
JP3950858B2 JP2004008393A JP2004008393A JP3950858B2 JP 3950858 B2 JP3950858 B2 JP 3950858B2 JP 2004008393 A JP2004008393 A JP 2004008393A JP 2004008393 A JP2004008393 A JP 2004008393A JP 3950858 B2 JP3950858 B2 JP 3950858B2
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JP
Japan
Prior art keywords
grating
focal plane
electromagnetic radiation
wavefront
detector
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Expired - Fee Related
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JP2004008393A
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Japanese (ja)
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JP2004219423A5 (https=
JP2004219423A (ja
Inventor
ケイ プルトニー シャーマン
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ASML Holding NV
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ASML Holding NV
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J9/00—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
    • G01J9/02—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods
    • G01J9/0215—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods by shearing interferometric methods
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1838—Diffraction gratings for use with ultraviolet radiation or X-rays
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J9/00—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
    • G01J9/02—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods
    • G01J9/0215—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods by shearing interferometric methods
    • G01J2009/0219—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods by shearing interferometric methods using two or more gratings

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Public Health (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Instruments For Measurement Of Length By Optical Means (AREA)
JP2004008393A 2003-01-15 2004-01-15 波面測定システム、ｅｕｖフォトリソグラフィシステム、及び光学系の波面を測定する方法 Expired - Fee Related JP3950858B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US44005003P 2003-01-15 2003-01-15
US10/750,986 US7268891B2 (en) 2003-01-15 2004-01-05 Transmission shear grating in checkerboard configuration for EUV wavefront sensor

Publications (3)

Publication Number Publication Date
JP2004219423A JP2004219423A (ja) 2004-08-05
JP2004219423A5 JP2004219423A5 (https=) 2005-05-26
JP3950858B2 true JP3950858B2 (ja) 2007-08-01

Family

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Family Applications (1)

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JP2004008393A Expired - Fee Related JP3950858B2 (ja) 2003-01-15 2004-01-15 波面測定システム、ｅｕｖフォトリソグラフィシステム、及び光学系の波面を測定する方法

Country Status (7)

Country Link
US (2) US7268891B2 (https=)
EP (1) EP1439427A3 (https=)
JP (1) JP3950858B2 (https=)
KR (1) KR100730245B1 (https=)
CN (1) CN100476586C (https=)
SG (1) SG107675A1 (https=)
TW (1) TWI279590B (https=)

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Also Published As

Publication number Publication date
SG107675A1 (en) 2004-12-29
CN100476586C (zh) 2009-04-08
CN1523448A (zh) 2004-08-25
US20040169866A1 (en) 2004-09-02
TWI279590B (en) 2007-04-21
EP1439427A3 (en) 2006-08-30
KR20040066038A (ko) 2004-07-23
US7602503B2 (en) 2009-10-13
KR100730245B1 (ko) 2007-06-20
JP2004219423A (ja) 2004-08-05
US7268891B2 (en) 2007-09-11
US20070153295A1 (en) 2007-07-05
TW200417758A (en) 2004-09-16
EP1439427A2 (en) 2004-07-21

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