CN100476586C - 用于euv波阵面传感器的棋盘式设置中的透射切变光栅 - Google Patents

用于euv波阵面传感器的棋盘式设置中的透射切变光栅 Download PDF

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Publication number
CN100476586C
CN100476586C CNB2004100019184A CN200410001918A CN100476586C CN 100476586 C CN100476586 C CN 100476586C CN B2004100019184 A CNB2004100019184 A CN B2004100019184A CN 200410001918 A CN200410001918 A CN 200410001918A CN 100476586 C CN100476586 C CN 100476586C
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CN
China
Prior art keywords
grating
projection optics
electromagnetic radiation
focal plane
plane
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Expired - Fee Related
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CNB2004100019184A
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English (en)
Chinese (zh)
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CN1523448A (zh
Inventor
谢尔曼·K·波尔特尼
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ASML Holding NV
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ASML Holding NV
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Publication of CN1523448A publication Critical patent/CN1523448A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J9/00—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
    • G01J9/02—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods
    • G01J9/0215—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods by shearing interferometric methods
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1838—Diffraction gratings for use with ultraviolet radiation or X-rays
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J9/00—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
    • G01J9/02—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods
    • G01J9/0215—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods by shearing interferometric methods
    • G01J2009/0219—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods by shearing interferometric methods using two or more gratings

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Public Health (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Instruments For Measurement Of Length By Optical Means (AREA)
CNB2004100019184A 2003-01-15 2004-01-15 用于euv波阵面传感器的棋盘式设置中的透射切变光栅 Expired - Fee Related CN100476586C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US44005003P 2003-01-15 2003-01-15
US60/440,050 2003-01-15
US10/750,986 2004-01-05
US10/750,986 US7268891B2 (en) 2003-01-15 2004-01-05 Transmission shear grating in checkerboard configuration for EUV wavefront sensor

Publications (2)

Publication Number Publication Date
CN1523448A CN1523448A (zh) 2004-08-25
CN100476586C true CN100476586C (zh) 2009-04-08

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CNB2004100019184A Expired - Fee Related CN100476586C (zh) 2003-01-15 2004-01-15 用于euv波阵面传感器的棋盘式设置中的透射切变光栅

Country Status (7)

Country Link
US (2) US7268891B2 (https=)
EP (1) EP1439427A3 (https=)
JP (1) JP3950858B2 (https=)
KR (1) KR100730245B1 (https=)
CN (1) CN100476586C (https=)
SG (1) SG107675A1 (https=)
TW (1) TWI279590B (https=)

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Also Published As

Publication number Publication date
JP3950858B2 (ja) 2007-08-01
SG107675A1 (en) 2004-12-29
CN1523448A (zh) 2004-08-25
US20040169866A1 (en) 2004-09-02
TWI279590B (en) 2007-04-21
EP1439427A3 (en) 2006-08-30
KR20040066038A (ko) 2004-07-23
US7602503B2 (en) 2009-10-13
KR100730245B1 (ko) 2007-06-20
JP2004219423A (ja) 2004-08-05
US7268891B2 (en) 2007-09-11
US20070153295A1 (en) 2007-07-05
TW200417758A (en) 2004-09-16
EP1439427A2 (en) 2004-07-21

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