TWI257881B - Device and method for wet treating disc-shaped articles - Google Patents
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- 238000000034 method Methods 0.000 title claims description 9
- 239000007788 liquid Substances 0.000 claims abstract description 81
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- 230000001276 controlling effect Effects 0.000 claims description 2
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- 238000013022 venting Methods 0.000 description 10
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- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 238000005086 pumping Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
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- 239000000376 reactant Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
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Description
1257881 玖、發明說明: t發明所屬之技術領域3 發明領域 本發明係有關一種用來濕式處理平板狀基材,例如半 5 導體晶圓、平板顯示器或光碟等的裝置和方法。該裝置包 含一轉盤可固持及旋轉該基材,至少一分配器可配佈一液 體於該基材的至少一表面上,一液體收集器圍繞該轉盤可 收集該基材旋轉時甩出的液體。該液體收集器具有至少二 收集層。該各收集層可分別地將液體收集於不同的收集器 10 中。 該裝置更包含揚升裝置可沿旋轉軸而相對於液體收集 器來移動轉盤,及至少二排氣層可分開地收集液體收集器 内部的氣體。由該液體收集器内部來收集氣體,將可防止 當該基材甩出液體時造成水氣的沈積。 15 該等液體收集器通常稱為“杯”(“CUP”),但其並不一 定有一封閉的底。該液體收集器之另一常用名稱係為“腔 室”(Chamber),惟其並非在所有各面皆封閉。 I:先前技術3 發明背景 20 此等裝置已習知於該領域中,並曾被詳揭於No. 4903717美國專利中。該專利案揭示每一收集層的收集器皆 連接於一共同的排氣口。故每一收集層亦同時會形如一排 放層。因此當該共同排氣口開放時,氣體即會被各排放層 由該液體收集器的内部吸出。 1257881 當此過程中,在該轉盤下方的氣體壓力可能會比周遭 氣體壓力更低。因此有些應該要被甩進某一特定收集層中 的液體,可能會被部份地吸入在該預定收集層底下的另一 收集層中。 5 若有一液體X被送至錯誤的收集層(其本應要收集另一 不同的液體Y)中,則該液體X將會污染液體Y。在最壞的情 況下,該二液體X與Y將會互相反應而產生危險或易燃的反 應物。 假使液體Y會被回收集俾儘可能地處理更多的基材,則 10 亦可能發生另一種不良的結果。因液體Y被液體X污染後可 能會毀壞其後所處理的基材。於此情況之另一種結果係亦 可能會嚴重縮短該液體Y的有效期限。 I:發明内容3 發明概要 15 故本發明之一目的係為防止液體被部份地吸入實際上 並非被選擇來收集該液體的收集層中。 本發明的另一目的係要減少所需的排氣流。此不僅是 因為每單位時間較高的排氣體積會提高處理成本,而且亦 因太高的排氣量將太多的液體吸入排氣口中,致會造成較 20 高的液體消耗量及清潔排放空氣較費事的缺點。 本發明能提供一種可供濕式處理平板狀基材的裝置來 達成這些目的,該裝置包含: 一轉盤可固持及旋轉該基材; 至少一分配器可將一液體配佈於該基材的至少一表面 1257881 上; 一液體收集器圍繞該轉盤而可收集該基材旋轉時所甩 出的液體,並具有至少二收集層係能將液體分開地收集於 不同的收集器中; 5 揚升裝置可沿旋轉軸而相對於液體收集器來移動轉 盤; 至少二排氣層可分開地由該液體收集器内部來收集氣 體; 至少一排氣影響裝置,其係附設於至少一前述之排氣 10 層,而可選擇性地改變該排氣層中的氣流狀態。 該分配器可為多種形式,例如能將液體噴灑於一基材 上,或以連續無亂流的方式來使液體流注於該基材上。該 分配器亦可被設成當在處理時係指向一基材的底面而會向 上喷液,或在處理時會指向一基材的頂面而向下喷灑。於 15 此二狀況下,該分配器皆可被設成能在處理過程中水平地 移動。其亦可同時使用該兩種分配器,而得同時將液體喷 佈於一基材的兩面上。 該轉盤可例如為一真空吸盤,一伯努利(Bernoulli)吸 盤,一僅抓住基材邊緣(僅接觸邊緣式即ECO)的夾盤,或這 20 些類型的組合。 每一排氣層皆包含有向内開放的吸孔。該等吸孔可為 呈環狀排列的多數喷嘴。另一可能性係形成一環形的隙狀 喷嘴。在任一種情況下,其皆能有利地提供一環狀集氣室 而來環圍地均等化在同一排氣層中的氣流狀況。 1257881 本發明之一優點係能大量地減少排氣體積,並可避免 二相鄰收集層之間的交叉污染。 該裝置亦可選擇性地設有排氣影響裝置,它們係為流 量控制調節閥,例如蝴蝶閥。此不僅能關閉一排氣層,亦 5 能精確地減少每一排氣層中的氣流。 在一較佳的裝置中該至少一排氣影響裝置係為一關閉 閥,而使一所述的排氣層能被封閉。此等構造能供更容易 地控制。 在另一實施例中,該裝置亦包含控制裝置,而使所述 10 之排氣影響裝置能依據該轉盤與液體收集器的相對位置來 被控制。雖此可藉直接連結排氣影響裝置與揚升裝置而以 機械方式來簡單地完成,但其典型會以一電腦來進行。在 後者的情況下,該電腦會接收有關該轉盤與液體收集器之 相對位置的資訊,其係直接得自該揚升裝置或可檢出該位 15 置的電子檢測。 若該等排氣層的吸孔係連接於一收集層,則此收集層 將會同時形如一排氣層。該氣體會由液體收集器的内部被 吸入該收集層中,並於其中來與液體分開。 又另一實施例係有至少一所述之排氣層被設在一收集 20 層的上方或下方。於此情況下,該收集層僅會收集液體而 不會抽吸氣體。其優點係該氣體和液體並不需要在被收集 之後再來分開。 本發明的另一態樣係為一種控制在一用來濕處理一平 板狀基材的裝置中之氣流的方法。該裝置包含一轉盤可固 1257881 持及旋轉該基材,至少一分配器可將一液體配佈於該基材 的至少一表面上,一液體收集器圍繞該轉盤而可收集該基 材旋轉時甩出的液體。該液體收集器包含至少二收集層可 分開地收集液體。該裝置更包含揚升裝置可沿著旋轉轴而 5 相對於液體收集器來移動該轉盤,及至少二排氣層可分開 地收集該液體收集器内部的氣體。該方法的特徵係可在至 少二該等排氣層中產生不同的氣流狀況。 於一實施例中,該等不同的氣流狀況係以一種方式來 選擇,而使靠近該旋轉基材的上方和下方處皆能達到相同 10 的氣體壓力。 本發明之其它的細節和優點將可由一較佳實施例的詳 細說明來得知。 圖式簡單說明 第1圖為本發明第一實施例的截面示意圖。 15 第2圖為本發明第二實施例的截面示意圖。 【實施方式3 較佳實施例之詳細說明 第1圖示出一裝置1包含一轉盤2可固持並旋轉一基材 W。該基材W具有一第一面W1及一第二面W2。該轉盤2係 20 連結於一齒輪馬達單元5,而可繞其軸心A來旋轉。分配臂3 係用來將液體配佈在該基材W的第一表面W1上。 一杯狀的液體收集器4會圍繞著該轉盤2。該液體收集 器係固設在一框架上(未示出)。揚升裝置Η會被設來改變該 轉盤相對於液體收集器的位置。故該轉盤2可被揚升至三個 1257881 收集層Ll、L2、L3處。該各收集層Ll、L2、L3皆包含一環 狀槽部41、42、43可將被甩出的液體容納其中。一附加的 防濺板(未示出)可被使用於各收集層中,以供甩出的液體能 以一銳角冲擊到它,再被導至該環槽。該各環槽41、42、 5 43係連接於一導管81、82、83,被收集的液體可由之來排 出。被排出的液體可被立即回收再使用而配佈於基材上, 或當作廢水來收集。該各收集層Ll、L2、L3係可用來收集 不同的液體。L1可供收集冲洗液(例如去離子水),L2可收 集酸液,L3則可收集鹼液。 10 圖中的假想線代表該基材會被置設的平面,俾將液體 甩入不同的收集層中。 在各收集層Ll、L2、L3上方係與該收集層平行地設有 一排氣層El、E2、E3。該等排氣層係以虛線來表示。各排 氣層皆包含多數朝内開放而呈環狀排列的吸孔21、22、23 15等。該各多數吸孔的陣列21、22或23係分別連接於一分開 的環狀集氣室11、12、13。 該各集氣室會經由-管路61、62、63來被抽氣。在各 管路61、62、63中係以一閥7:1、72、73來控制。於所示實 施例中,該各閥係為蝴蝶閥。此將會帶來好處,即該閥並
2〇不需要完全關閉,但可幾乎關閉,因此在特定的抽吸程度 下仍有非常少量的氣體能被抽掉。 X 大部份由該液體收集器的内部40被柚出的氣流(空氣) 係由上方(第-氣流F1)來提供。其它的開孔亦會被設置,其 係在該轉盤的下方來連接液體收集器的内部和外部。此將 10 1257881 曰Xe成Μ 一氣流F2,其最好是由周邊的無塵室或由一分 開的源頭來饋人乾淨的空氣。亦可^置能選擇地調節第二 氣流的裝置。 -一____1圖所示的裝置1之各種可能狀況 鐘般彳fr 署 ^^Γ r~:—-------- 下排氣層Ε3 王層L2 ^ Tji#vfL3 中排氣層E2 80%開放 100%開放 10%開放 關閉 ~6〇%mt 100%開放 一電腦可自動地依據該轉盤的位置來選擇該各排氣層 的狀態。 第2圖不出本發明之一第二實施例,其係類似於第一實 ^例而有下列的差異。該等排氣孔21、22、23係連接於各 0收集層。故該等收集層u心七亦會同時形成排氣層£卜 E2、E3等。為均等化抽氣狀況,圍繞各排氣層之各吸孔陣 列係連接於一環形集氣室。 _ 轉盤位置 ST集層 li" T^fL3~ 表乃示出運J作第2圖所示之裝置1的各種可能狀況 上排氣層El 100%開放 10%開放 關閉 中排氣層E2 10%開放 100%開放 10%開放 下排氣層E3 ~~m~~ 10%開放 100%開放 為月匕为開由一特定排氣層(如E2)抽出的氣體與由另一 排氣層(如E3)抽出的氣體,乃可將各排氣層連接於一不同 的排氣系統。此排氣系統可包含能中和氣體,去除氧化氮 (除去N〇x)及/或除去液體殘留物(水氣)等之元件。 S降低S轉盤2時,則在該轉盤2底下的氣體容積47將 2〇會減少。因此為避免排放氣體對冲第二氣流F2,則其可能 11 1257881 需要暫時地開放下排氣層或概略增加排氣流E。 【圖式簡單說明】 第1圖為本發明第一實施例的截面示意圖。 第2圖為本發明第二實施例的截面示意圖。 5 【圖式之主要元件代表符號表】 1···濕處理裝置 71,72,73…閥 2…轉盤 A…轉轴 3···分配臂 E···排氣流 4···液體收集器 El,E2,E3…排氣層 5···齒輪馬達單元 F1…第一氣流 11,12,13…集氣室 F2···第二氣流 21,22,23···吸孔 Η…揚升裝置 40···内部 LI,L2,L3···收集層 41,42,43…環槽 W…基材 47…氣體容積 W1···第一面 61,62,63···管路 W2···第二面 12
Claims (1)
1257881 拾、申請專利範圍: 弟093107⑻0號專利申請案申請專利範圍修正本 A碎:月> j日m)正本 修正曰期:95年2月 1. 一種法味 式處理平板狀基材k裝置,包含: 一轉盤可固持及旋轉該基材; 至少一分配器可將一液體配佈於該基材的至少一 表面上; 一液體收集器圍繞著該轉盤而可收集該基材旋轉 日守甩出的液體,並具有至少二收集層可將液體分開地收 集於不同的收集部中; 揚升t置可沿轉軸而相對於液體收集器來移動轉 盤; 至少二排氣層能分開地由該液體收集器的内部收 集氣體; 至少一排氣影響裝置係附設於至少一前述的排氣 ^而可遥擇性地改變該排氣層中的氣流狀態。 2· 3· 20 4. 5. 士申π專利圍第!項之裝置,其中該至少—排氣影響 裝置係為一流量控制調節閥,例如一蝴蝶閥。 2請專㈣圍第㈣之裝置,其中該至少—排氣影響 裝置係為-關閉閥,而使―所述之排氣層能被關閉。 如申%專利範圍第1項之裝置,更包含有控制裝置而使 义至夕一排氣影響裝置能依據該轉盤對液體收集器的 相對位置來被控制。 如申請專利範圍第1項之裝置,其中至少有-排氣層的 1257881 吸孔等係連接於一所述的收集層。 6. 如申請專利範圍第1項之裝置,其中至少有一所述的排 氣層係被設在一收集層的上方或下方。 7. —種控制在一濕處理平板狀基材的裝置内之氣流的方 5 法,該裝置包含一轉盤可固持及旋轉該基材;至少一分 配器可將一液體配佈於該基材的至少一表面上;一液體 收集器圍繞該轉盤而可收集該基材旋轉時甩出的液 體,並具有至少二收集層能分開地收集液體;揚升裝置 可沿旋轉軸來相對於液體收集器移動該轉盤;至少二排 10 氣層可分開地收集該液體收集器内部的氣體;該方法的 特徵係: 能在至少二所述排氣層中選擇性地產生不同的氣 流狀態。 8. 如申請專利範圍第7項之方法,其中該不同的氣流狀態 15 係被選擇成能使靠近該旋轉基材的上方及下方處皆達 到相同的氣體壓力。
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EP (1) | EP1609172B1 (zh) |
JP (1) | JP4441530B2 (zh) |
KR (1) | KR101039765B1 (zh) |
CN (1) | CN100447943C (zh) |
AT (1) | ATE421165T1 (zh) |
DE (1) | DE602004019061D1 (zh) |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI419220B (zh) * | 2008-12-12 | 2013-12-11 | Grand Plastic Technology Co Ltd | 具有移動式洩液槽之清洗蝕刻機台 |
Families Citing this family (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6129973A (en) * | 1994-07-29 | 2000-10-10 | Battelle Memorial Institute | Microchannel laminated mass exchanger and method of making |
JP2007180379A (ja) * | 2005-12-28 | 2007-07-12 | Ses Co Ltd | 基板処理方法及び基板処理装置 |
KR100687011B1 (ko) | 2006-01-13 | 2007-02-26 | 세메스 주식회사 | 기판 처리 장치 |
KR100787996B1 (ko) * | 2006-06-16 | 2007-12-21 | 세메스 주식회사 | 기판 처리 장치 및 상기 장치로부터 처리액을 회수하는방법 |
TWI359456B (en) * | 2006-12-15 | 2012-03-01 | Lam Res Ag | Device and method for wet treating plate-like arti |
US7849865B2 (en) * | 2007-01-05 | 2010-12-14 | Semitool, Inc. | System for processing a workpiece |
KR100839913B1 (ko) * | 2007-01-12 | 2008-06-19 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
KR100839912B1 (ko) * | 2007-01-12 | 2008-06-20 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
US7972969B2 (en) * | 2008-03-06 | 2011-07-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and apparatus for thinning a substrate |
US20100258142A1 (en) * | 2009-04-14 | 2010-10-14 | Mark Naoshi Kawaguchi | Apparatus and method for using a viscoelastic cleaning material to remove particles on a substrate |
US9159593B2 (en) * | 2008-06-02 | 2015-10-13 | Lam Research Corporation | Method of particle contaminant removal |
JP5084639B2 (ja) * | 2008-06-30 | 2012-11-28 | 芝浦メカトロニクス株式会社 | スピン処理装置 |
CN101673062B (zh) * | 2008-09-09 | 2011-10-26 | 中芯国际集成电路制造(北京)有限公司 | 一种全湿法去胶的装置 |
CN101992165B (zh) * | 2009-08-27 | 2012-10-24 | 沈阳芯源微电子设备有限公司 | 一种用于圆形薄片状物体进行化学液喷洒处理的装置 |
JP5318010B2 (ja) * | 2010-03-26 | 2013-10-16 | 大日本スクリーン製造株式会社 | 基板処理装置 |
KR101258002B1 (ko) | 2010-03-31 | 2013-04-24 | 다이닛뽕스크린 세이조오 가부시키가이샤 | 기판처리장치 및 기판처리방법 |
KR101592058B1 (ko) * | 2010-06-03 | 2016-02-05 | 도쿄엘렉트론가부시키가이샤 | 기판 액처리 장치 |
TWI421928B (zh) * | 2010-06-10 | 2014-01-01 | Grand Plastic Technology Co Ltd | 清洗蝕刻機台之自動清洗方法 |
US8926788B2 (en) * | 2010-10-27 | 2015-01-06 | Lam Research Ag | Closed chamber for wafer wet processing |
US20120286481A1 (en) * | 2011-05-13 | 2012-11-15 | Lam Research Ag | Device and process for liquid treatment of wafer shaped articles |
US8997764B2 (en) | 2011-05-27 | 2015-04-07 | Lam Research Ag | Method and apparatus for liquid treatment of wafer shaped articles |
US20130008602A1 (en) * | 2011-07-07 | 2013-01-10 | Lam Research Ag | Apparatus for treating a wafer-shaped article |
US9355883B2 (en) | 2011-09-09 | 2016-05-31 | Lam Research Ag | Method and apparatus for liquid treatment of wafer shaped articles |
US10269615B2 (en) | 2011-09-09 | 2019-04-23 | Lam Research Ag | Apparatus for treating surfaces of wafer-shaped articles |
US8894877B2 (en) | 2011-10-19 | 2014-11-25 | Lam Research Ag | Method, apparatus and composition for wet etching |
US9484229B2 (en) * | 2011-11-14 | 2016-11-01 | Lam Research Ag | Device and method for processing wafer-shaped articles |
CN103357637B (zh) * | 2012-03-31 | 2016-06-22 | 弘塑科技股份有限公司 | 清洗蚀刻机台移动式泄液槽的排气装置 |
US20140053982A1 (en) * | 2012-08-23 | 2014-02-27 | Lam Research Ag | Method and apparatus for processing wafer-shaped articles |
US9316443B2 (en) | 2012-08-23 | 2016-04-19 | Lam Research Ag | Method and apparatus for liquid treatment of wafer shaped articles |
US9147593B2 (en) | 2012-10-10 | 2015-09-29 | Lam Research Ag | Apparatus for liquid treatment of wafer shaped articles |
US9748120B2 (en) | 2013-07-01 | 2017-08-29 | Lam Research Ag | Apparatus for liquid treatment of disc-shaped articles and heating system for use in such apparatus |
US9093482B2 (en) | 2012-10-12 | 2015-07-28 | Lam Research Ag | Method and apparatus for liquid treatment of wafer shaped articles |
US9589818B2 (en) | 2012-12-20 | 2017-03-07 | Lam Research Ag | Apparatus for liquid treatment of wafer shaped articles and liquid control ring for use in same |
US10134611B2 (en) | 2013-03-22 | 2018-11-20 | Lam Research Ag | Collector for use with an apparatus for treating wafer-shaped articles |
US10707099B2 (en) | 2013-08-12 | 2020-07-07 | Veeco Instruments Inc. | Collection chamber apparatus to separate multiple fluids during the semiconductor wafer processing cycle |
US9768041B2 (en) | 2013-08-12 | 2017-09-19 | Veeco Precision Surface Processing Llc | Collection chamber apparatus to separate multiple fluids during the semiconductor wafer processing cycle |
US9698029B2 (en) * | 2014-02-19 | 2017-07-04 | Lam Research Ag | Method and apparatus for processing wafer-shaped articles |
US9779979B2 (en) | 2014-02-24 | 2017-10-03 | Lam Research Ag | Apparatus for liquid treatment of wafer shaped articles |
US9786524B2 (en) * | 2014-04-15 | 2017-10-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Developing unit with multi-switch exhaust control for defect reduction |
KR101681183B1 (ko) * | 2014-07-11 | 2016-12-02 | 세메스 주식회사 | 기판 처리 장치 |
US9500405B2 (en) | 2014-10-28 | 2016-11-22 | Lam Research Ag | Convective wafer heating by impingement with hot gas |
JP6715019B2 (ja) * | 2016-02-09 | 2020-07-01 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
CN107093567B (zh) * | 2016-02-18 | 2019-08-06 | 顶程国际股份有限公司 | 环状液体收集装置 |
US9972514B2 (en) | 2016-03-07 | 2018-05-15 | Lam Research Ag | Apparatus for liquid treatment of wafer shaped articles |
US11342215B2 (en) | 2017-04-25 | 2022-05-24 | Veeco Instruments Inc. | Semiconductor wafer processing chamber |
US10618085B2 (en) | 2017-05-31 | 2020-04-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and methods for exhaust cleaning |
CN107968061A (zh) * | 2017-11-21 | 2018-04-27 | 长江存储科技有限责任公司 | 晶圆清洗液回收装置 |
US11244841B2 (en) * | 2017-12-01 | 2022-02-08 | Elemental Scientific, Inc. | Systems for integrated decomposition and scanning of a semiconducting wafer |
KR102139605B1 (ko) * | 2018-11-06 | 2020-08-12 | 세메스 주식회사 | 기판 처리 방법 및 기판 처리 장치 |
GB201820270D0 (en) | 2018-12-12 | 2019-01-30 | Lam Res Ag | Method and apparatus for treating semiconductor substrate |
TWI718529B (zh) * | 2019-05-06 | 2021-02-11 | 弘塑科技股份有限公司 | 單晶圓濕處理設備 |
CN111900102A (zh) * | 2019-05-06 | 2020-11-06 | 弘塑科技股份有限公司 | 单晶圆湿处理设备 |
TWI711491B (zh) * | 2020-01-03 | 2020-12-01 | 弘塑科技股份有限公司 | 基板濕處理設備及回收環 |
GB202319852D0 (en) | 2023-12-21 | 2024-02-07 | Lam Res Ag | Method and apparatus |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US140949A (en) * | 1873-07-15 | Improvement in match-boxes | ||
JPS63295696A (ja) * | 1987-05-27 | 1988-12-02 | Mitsubishi Electric Corp | 陰極線管用螢光体 |
AT389959B (de) * | 1987-11-09 | 1990-02-26 | Sez Semiconduct Equip Zubehoer | Vorrichtung zum aetzen von scheibenfoermigen gegenstaenden, insbesondere von siliziumscheiben |
US5070813A (en) * | 1989-02-10 | 1991-12-10 | Tokyo Electron Limited | Coating apparatus |
US5273589A (en) | 1992-07-10 | 1993-12-28 | Griswold Bradley L | Method for low pressure rinsing and drying in a process chamber |
KR100284559B1 (ko) * | 1994-04-04 | 2001-04-02 | 다카시마 히로시 | 처리방법 및 처리장치 |
KR0164007B1 (ko) * | 1994-04-06 | 1999-02-01 | 이시다 아키라 | 미세 패턴화된 레지스트막을 가지는 기판의 건조처리방법 및 장치 |
US5711809A (en) * | 1995-04-19 | 1998-01-27 | Tokyo Electron Limited | Coating apparatus and method of controlling the same |
JPH09243419A (ja) | 1996-03-12 | 1997-09-19 | Rion Co Ltd | 液体試料の吸引装置 |
US6027602A (en) * | 1997-08-29 | 2000-02-22 | Techpoint Pacific Singapore Pte. Ltd. | Wet processing apparatus |
JP3708690B2 (ja) | 1997-09-12 | 2005-10-19 | 大日本スクリーン製造株式会社 | 基板現像装置 |
DE19807460A1 (de) * | 1998-02-21 | 1999-04-15 | Sez Semiconduct Equip Zubehoer | Ringförmige Aufnahme für einen rotierenden Träger |
JP2001044164A (ja) | 1999-07-26 | 2001-02-16 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2001077082A (ja) * | 1999-09-06 | 2001-03-23 | Takata Corp | 処理液回収用チャンバー構造 |
JP4426036B2 (ja) | 1999-12-02 | 2010-03-03 | 東京エレクトロン株式会社 | 基板処理装置 |
JP2002305177A (ja) * | 2001-02-01 | 2002-10-18 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP4531998B2 (ja) | 2001-02-21 | 2010-08-25 | Okiセミコンダクタ株式会社 | 廃液分離回収システム及び廃液分離回収方法 |
JP2002329705A (ja) | 2001-04-26 | 2002-11-15 | Shibaura Mechatronics Corp | スピン処理装置 |
US7074726B2 (en) * | 2002-01-31 | 2006-07-11 | Dainippon Screen Mfg. Co., Ltd. | Substrate treating method and substrate treating apparatus |
US7584760B2 (en) * | 2002-09-13 | 2009-09-08 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus |
-
2004
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI419220B (zh) * | 2008-12-12 | 2013-12-11 | Grand Plastic Technology Co Ltd | 具有移動式洩液槽之清洗蝕刻機台 |
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US7837803B2 (en) | 2010-11-23 |
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ATE421165T1 (de) | 2009-01-15 |
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TW200422113A (en) | 2004-11-01 |
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KR20050107806A (ko) | 2005-11-15 |
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