ATE421165T1 - Einrichtung und verfahren zur nassbehandlung scheibenförmiger artikel - Google Patents

Einrichtung und verfahren zur nassbehandlung scheibenförmiger artikel

Info

Publication number
ATE421165T1
ATE421165T1 AT04720127T AT04720127T ATE421165T1 AT E421165 T1 ATE421165 T1 AT E421165T1 AT 04720127 T AT04720127 T AT 04720127T AT 04720127 T AT04720127 T AT 04720127T AT E421165 T1 ATE421165 T1 AT E421165T1
Authority
AT
Austria
Prior art keywords
disc
shaped articles
wet treatment
level
collector levels
Prior art date
Application number
AT04720127T
Other languages
English (en)
Inventor
Karl-Heinz Hohenwarter
Original Assignee
Sez Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sez Ag filed Critical Sez Ag
Application granted granted Critical
Publication of ATE421165T1 publication Critical patent/ATE421165T1/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67075Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00Cleaning and liquid contact with solids
    • Y10S134/902Semiconductor wafer
AT04720127T 2003-03-20 2004-03-12 Einrichtung und verfahren zur nassbehandlung scheibenförmiger artikel ATE421165T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AT4442003 2003-03-20
EP04720127A EP1609172B1 (de) 2003-03-20 2004-03-12 Einrichtung und verfahren zur nassbehandlung scheibenförmiger artikel

Publications (1)

Publication Number Publication Date
ATE421165T1 true ATE421165T1 (de) 2009-01-15

Family

ID=32996818

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04720127T ATE421165T1 (de) 2003-03-20 2004-03-12 Einrichtung und verfahren zur nassbehandlung scheibenförmiger artikel

Country Status (9)

Country Link
US (2) US7837803B2 (de)
EP (1) EP1609172B1 (de)
JP (1) JP4441530B2 (de)
KR (1) KR101039765B1 (de)
CN (1) CN100447943C (de)
AT (1) ATE421165T1 (de)
DE (1) DE602004019061D1 (de)
TW (1) TWI257881B (de)
WO (1) WO2004084278A1 (de)

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US20100258142A1 (en) * 2009-04-14 2010-10-14 Mark Naoshi Kawaguchi Apparatus and method for using a viscoelastic cleaning material to remove particles on a substrate
US9159593B2 (en) * 2008-06-02 2015-10-13 Lam Research Corporation Method of particle contaminant removal
JP5084639B2 (ja) * 2008-06-30 2012-11-28 芝浦メカトロニクス株式会社 スピン処理装置
CN101673062B (zh) * 2008-09-09 2011-10-26 中芯国际集成电路制造(北京)有限公司 一种全湿法去胶的装置
TWI419220B (zh) * 2008-12-12 2013-12-11 Grand Plastic Technology Co Ltd 具有移動式洩液槽之清洗蝕刻機台
CN101992165B (zh) * 2009-08-27 2012-10-24 沈阳芯源微电子设备有限公司 一种用于圆形薄片状物体进行化学液喷洒处理的装置
JP5318010B2 (ja) * 2010-03-26 2013-10-16 大日本スクリーン製造株式会社 基板処理装置
US8501025B2 (en) 2010-03-31 2013-08-06 Dainippon Screen Mfg. Co., Ltd. Substrate treatment apparatus and substrate treatment method
KR101592058B1 (ko) * 2010-06-03 2016-02-05 도쿄엘렉트론가부시키가이샤 기판 액처리 장치
TWI421928B (zh) * 2010-06-10 2014-01-01 Grand Plastic Technology Co Ltd 清洗蝕刻機台之自動清洗方法
US8926788B2 (en) * 2010-10-27 2015-01-06 Lam Research Ag Closed chamber for wafer wet processing
US20120286481A1 (en) * 2011-05-13 2012-11-15 Lam Research Ag Device and process for liquid treatment of wafer shaped articles
US8997764B2 (en) 2011-05-27 2015-04-07 Lam Research Ag Method and apparatus for liquid treatment of wafer shaped articles
US20130008602A1 (en) * 2011-07-07 2013-01-10 Lam Research Ag Apparatus for treating a wafer-shaped article
US10269615B2 (en) 2011-09-09 2019-04-23 Lam Research Ag Apparatus for treating surfaces of wafer-shaped articles
US9355883B2 (en) 2011-09-09 2016-05-31 Lam Research Ag Method and apparatus for liquid treatment of wafer shaped articles
US8894877B2 (en) 2011-10-19 2014-11-25 Lam Research Ag Method, apparatus and composition for wet etching
US9484229B2 (en) 2011-11-14 2016-11-01 Lam Research Ag Device and method for processing wafer-shaped articles
CN103357637B (zh) * 2012-03-31 2016-06-22 弘塑科技股份有限公司 清洗蚀刻机台移动式泄液槽的排气装置
US20140053982A1 (en) * 2012-08-23 2014-02-27 Lam Research Ag Method and apparatus for processing wafer-shaped articles
US9316443B2 (en) 2012-08-23 2016-04-19 Lam Research Ag Method and apparatus for liquid treatment of wafer shaped articles
US9147593B2 (en) 2012-10-10 2015-09-29 Lam Research Ag Apparatus for liquid treatment of wafer shaped articles
US9748120B2 (en) 2013-07-01 2017-08-29 Lam Research Ag Apparatus for liquid treatment of disc-shaped articles and heating system for use in such apparatus
US9093482B2 (en) 2012-10-12 2015-07-28 Lam Research Ag Method and apparatus for liquid treatment of wafer shaped articles
US9589818B2 (en) 2012-12-20 2017-03-07 Lam Research Ag Apparatus for liquid treatment of wafer shaped articles and liquid control ring for use in same
US10134611B2 (en) 2013-03-22 2018-11-20 Lam Research Ag Collector for use with an apparatus for treating wafer-shaped articles
US10707099B2 (en) 2013-08-12 2020-07-07 Veeco Instruments Inc. Collection chamber apparatus to separate multiple fluids during the semiconductor wafer processing cycle
US9768041B2 (en) 2013-08-12 2017-09-19 Veeco Precision Surface Processing Llc Collection chamber apparatus to separate multiple fluids during the semiconductor wafer processing cycle
US9698029B2 (en) 2014-02-19 2017-07-04 Lam Research Ag Method and apparatus for processing wafer-shaped articles
US9779979B2 (en) * 2014-02-24 2017-10-03 Lam Research Ag Apparatus for liquid treatment of wafer shaped articles
US9786524B2 (en) * 2014-04-15 2017-10-10 Taiwan Semiconductor Manufacturing Company, Ltd. Developing unit with multi-switch exhaust control for defect reduction
KR101681183B1 (ko) * 2014-07-11 2016-12-02 세메스 주식회사 기판 처리 장치
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TWI797121B (zh) * 2017-04-25 2023-04-01 美商維克儀器公司 半導體晶圓製程腔體
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CN107968061A (zh) * 2017-11-21 2018-04-27 长江存储科技有限责任公司 晶圆清洗液回收装置
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KR102139605B1 (ko) * 2018-11-06 2020-08-12 세메스 주식회사 기판 처리 방법 및 기판 처리 장치
GB201820270D0 (en) 2018-12-12 2019-01-30 Lam Res Ag Method and apparatus for treating semiconductor substrate
TWI718529B (zh) * 2019-05-06 2021-02-11 弘塑科技股份有限公司 單晶圓濕處理設備
TWI711491B (zh) * 2020-01-03 2020-12-01 弘塑科技股份有限公司 基板濕處理設備及回收環

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Also Published As

Publication number Publication date
US7837803B2 (en) 2010-11-23
CN100447943C (zh) 2008-12-31
DE602004019061D1 (de) 2009-03-05
WO2004084278A1 (en) 2004-09-30
JP2006521013A (ja) 2006-09-14
CN1762041A (zh) 2006-04-19
EP1609172B1 (de) 2009-01-14
TW200422113A (en) 2004-11-01
US20070175500A1 (en) 2007-08-02
KR20050107806A (ko) 2005-11-15
US20100101424A1 (en) 2010-04-29
US8955529B2 (en) 2015-02-17
JP4441530B2 (ja) 2010-03-31
KR101039765B1 (ko) 2011-06-09
TWI257881B (en) 2006-07-11
EP1609172A1 (de) 2005-12-28

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