JP2006521013A - ディスク形状の物体を湿式処理するための装置及び方法 - Google Patents
ディスク形状の物体を湿式処理するための装置及び方法 Download PDFInfo
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- JP2006521013A JP2006521013A JP2006506699A JP2006506699A JP2006521013A JP 2006521013 A JP2006521013 A JP 2006521013A JP 2006506699 A JP2006506699 A JP 2006506699A JP 2006506699 A JP2006506699 A JP 2006506699A JP 2006521013 A JP2006521013 A JP 2006521013A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
Abstract
Description
−基板を保持し、かつ、回転するスピン・チャック、
−前記基板の少なくとも一面の上に液体を供給するための少なくとも1個のディスペンサー、
−回転中に基板から遠心力で流出した液体を、異なる捕集器に別々の液体を少なくとも2段の捕集器レベルで集めるために、前記スピン・チャックの周囲を囲んでいる液体捕集器、
−回転軸に実質的に沿ってスピン・チャックを液体捕集器に対して相対的に動かすための持ち上げ手段、
−液体捕集器の内部からガスを別けて捕集するための少なくとも2段の排気レベル、
−少なくとも2段の排気レベルの少なくとも一段でガスの流動状態を選択的に変化させるために、前記少なくとも2段の排気レベルの少なくとも一方と関連している少なくとも1個の排気制御手段、
ディスペンサーは種々の方法で構成できる。例えば、液体を基板上にスプレー(spray)するか又は乱流を生じない方法で基板上に連続して流す。ディスペンサーは、処理時に基板の下面を向くように、それゆえ、上昇流になるように、又は、処理時に基板の上面を向くように、それゆえ、下降流になるように構成しうる。両方の場合に、処理中にディスペンサーが水平に移動できるように構成しうる。さらに、両方の構成のディスペンサーを使用して、同時に基板の両面に液体を供給できるようにすることも可能である。
Claims (8)
- 平板状基板(W)を湿式処理するための装置(1)で、基板を保持し、かつ、回転するスピン・チャック(2);前記基板の少なくとも一面(W)の上に液体を供給するための少なくとも1個のディスペンサー(3);回転中に基板から遠心力で流出した液体を、少なくとも2段の捕集器レベル(L1,L2)で別々の液体を異なる捕集器(41、42)に集めるために、前記スピン・チャックの周囲を囲んでいる液体捕集器(4);回転軸(A)に実質的に沿ってスピン・チャック(2)を液体捕集器(4)に対して相対的に動かすための持ち上げ手段(H);液体捕集器(4)の内部(40)からガスを別けて捕集するための少なくとも2段の排気レベル(E1、E2);前記の少なくとも2段の排気レベル(E1、E2)の少なくとも一段でガスの流動状態を選択的に変化させるために、前記の少なくとも2段の排気レベルの少なくとも一方と関連している少なくとも1個の排気制御手段(71);
から成る装置(1)。 - その少なくとも1個の排気制御手段(71)がバタフライ弁のような流量制御用調節弁であることを特徴とする請求項1に基づく装置。
- その少なくとも1個の排気制御手段(71)が閉鎖用の弁であり、それにより少なくとも2段の排気レベルの一方を閉鎖することを特徴とする請求項1に基づく装置。
- 液体捕集器に対するスピン・チャックの相対的位置に基づいて、少なくとも1個の排気制御手段を制御する制御手段を含む請求項1に基づく装置。
- 少なくとも1段の排気レベル(E1、E2)の吸引オリフィス(21、22)がその2段の捕集器レベル(L1、L2)の一方に接続していることを特徴とする請求項1に基づく装置。
- 少なくとも2段の排気レベル(E1、E2)の少なくとも一方が捕集器レベル(L1、L2)の上方又は下方に配置されていることを特徴とする請求項1に基づく装置。
- 平板状の基板(W)を湿式処理するための装置(1)内のガス流を制御するための方法であって、その装置が、基板を保持し、かつ、回転するスピン・チャック(2);前記基板の少なくとも一面の上に液体を供給するための少なくとも1個のディスペンサー;回転中に基板から遠心力で流出した液体を、少なくとも2段の捕集器レベルで別々の液体を集めるために、前記スピン・チャックの周囲を囲んでいる液体捕集器;回転軸に実質的に沿ってスピン・チャックを液体捕集器に対して相対的に動かすための持ち上げ手段及び;液体捕集器の内部からガスを別けて捕集するための少なくとも2段の排気レベル;を具備する方法において、少なくとも2段の前記排気レベルで異なるガスの流動状態を選択的に生じることを特徴とする方法。
- その異なるガスの流動状態が、回転する基板に隣接したガス圧が基板の上方及び下方で同じになるように選択されることを特徴とする請求項7に基づく方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AT4442003 | 2003-03-20 | ||
PCT/IB2004/050238 WO2004084278A1 (en) | 2003-03-20 | 2004-03-12 | Device and method for wet treating disc-shaped articles |
Publications (2)
Publication Number | Publication Date |
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JP2006521013A true JP2006521013A (ja) | 2006-09-14 |
JP4441530B2 JP4441530B2 (ja) | 2010-03-31 |
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Application Number | Title | Priority Date | Filing Date |
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JP2006506699A Expired - Fee Related JP4441530B2 (ja) | 2003-03-20 | 2004-03-12 | ディスク形状の物体を湿式処理するための装置及び方法 |
Country Status (9)
Country | Link |
---|---|
US (2) | US7837803B2 (ja) |
EP (1) | EP1609172B1 (ja) |
JP (1) | JP4441530B2 (ja) |
KR (1) | KR101039765B1 (ja) |
CN (1) | CN100447943C (ja) |
AT (1) | ATE421165T1 (ja) |
DE (1) | DE602004019061D1 (ja) |
TW (1) | TWI257881B (ja) |
WO (1) | WO2004084278A1 (ja) |
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JP2012524408A (ja) * | 2009-04-14 | 2012-10-11 | ラム リサーチ コーポレーション | 粘弾性洗浄材料を使用して基板上の粒子を除去するための装置および方法 |
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2004
- 2004-03-12 JP JP2006506699A patent/JP4441530B2/ja not_active Expired - Fee Related
- 2004-03-12 US US10/549,620 patent/US7837803B2/en active Active
- 2004-03-12 WO PCT/IB2004/050238 patent/WO2004084278A1/en active Application Filing
- 2004-03-12 EP EP04720127A patent/EP1609172B1/en not_active Expired - Lifetime
- 2004-03-12 KR KR1020057017287A patent/KR101039765B1/ko active IP Right Grant
- 2004-03-12 DE DE602004019061T patent/DE602004019061D1/de not_active Expired - Lifetime
- 2004-03-12 CN CNB2004800075981A patent/CN100447943C/zh not_active Expired - Fee Related
- 2004-03-12 AT AT04720127T patent/ATE421165T1/de active
- 2004-03-16 TW TW093107000A patent/TWI257881B/zh active
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2010
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007180379A (ja) * | 2005-12-28 | 2007-07-12 | Ses Co Ltd | 基板処理方法及び基板処理装置 |
JP2012524408A (ja) * | 2009-04-14 | 2012-10-11 | ラム リサーチ コーポレーション | 粘弾性洗浄材料を使用して基板上の粒子を除去するための装置および方法 |
JP2011204933A (ja) * | 2010-03-26 | 2011-10-13 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
KR20150098211A (ko) * | 2014-02-19 | 2015-08-27 | 램 리서치 아게 | 웨이퍼-형상 물체를 프로세싱하는 방법 및 장치 |
JP2015179823A (ja) * | 2014-02-19 | 2015-10-08 | ラム・リサーチ・アーゲーLam Research Ag | ウエハ状の物品を処理する方法および装置 |
KR102360260B1 (ko) | 2014-02-19 | 2022-02-07 | 램 리서치 아게 | 웨이퍼-형상 물체를 프로세싱하는 방법 및 장치 |
Also Published As
Publication number | Publication date |
---|---|
US7837803B2 (en) | 2010-11-23 |
CN100447943C (zh) | 2008-12-31 |
DE602004019061D1 (de) | 2009-03-05 |
WO2004084278A1 (en) | 2004-09-30 |
CN1762041A (zh) | 2006-04-19 |
EP1609172B1 (en) | 2009-01-14 |
TW200422113A (en) | 2004-11-01 |
US20070175500A1 (en) | 2007-08-02 |
KR20050107806A (ko) | 2005-11-15 |
US20100101424A1 (en) | 2010-04-29 |
US8955529B2 (en) | 2015-02-17 |
JP4441530B2 (ja) | 2010-03-31 |
ATE421165T1 (de) | 2009-01-15 |
KR101039765B1 (ko) | 2011-06-09 |
TWI257881B (en) | 2006-07-11 |
EP1609172A1 (en) | 2005-12-28 |
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